JPH03116885A - Exhaust device of gas laser device - Google Patents

Exhaust device of gas laser device

Info

Publication number
JPH03116885A
JPH03116885A JP25211389A JP25211389A JPH03116885A JP H03116885 A JPH03116885 A JP H03116885A JP 25211389 A JP25211389 A JP 25211389A JP 25211389 A JP25211389 A JP 25211389A JP H03116885 A JPH03116885 A JP H03116885A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
orifice plate
gas
laser
flow path
gas flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25211389A
Inventor
Kenji Haba
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/02Constructional details
    • H01S3/03Constructional details of gas laser discharge tubes
    • H01S3/036Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube

Abstract

PURPOSE:To prevent air from penetrating into a gas laser oscillator by a method wherein an orifice plate on a gas laser oscillator side is formed thicker than that on an atmosphere side, and a gas flow path which guides laser gas from the gas laser oscillator to an exhaust duct is provided. CONSTITUTION:An orifice plate 6B on an atmosphere side out of two orifice plates 6A and 6B is formed comparatively thin, and a narrow orifice 5 is provided to the center of the orifice plate 6B so as not to restrict the light flux of laser rays. The orifice plate 6A on an oscillator side is formed thicker than the orifice plate 6B on an atmosphere side, and a gas flow path 9 which guides laser gas from the oscillator to an exhaust duct is provided to the center of the orifice plate 6A. That is, the end of the gas flow path 9 provided to the orifice plate 6A on which laser rays are incident is formed comparatively wide and the other end of the gas flow path 9 from which laser rays are outgoing is formed narrow, and the outer circumference of the gas flow path 9 is sloped along the light flux of laser rays.
JP25211389A 1989-09-29 1989-09-29 Exhaust device of gas laser device Pending JPH03116885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25211389A JPH03116885A (en) 1989-09-29 1989-09-29 Exhaust device of gas laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25211389A JPH03116885A (en) 1989-09-29 1989-09-29 Exhaust device of gas laser device

Publications (1)

Publication Number Publication Date
JPH03116885A true true JPH03116885A (en) 1991-05-17

Family

ID=17232659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25211389A Pending JPH03116885A (en) 1989-09-29 1989-09-29 Exhaust device of gas laser device

Country Status (1)

Country Link
JP (1) JPH03116885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057225B2 (en) 1995-09-20 2006-06-06 Micron Technology, Inc. Semiconductor memory circuitry
US8299514B2 (en) 1995-09-20 2012-10-30 Round Rock Research, Llc High density integrated circuitry for semiconductor memory having memory cells with a minimum capable photolithographic feature dimension

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057225B2 (en) 1995-09-20 2006-06-06 Micron Technology, Inc. Semiconductor memory circuitry
US8299514B2 (en) 1995-09-20 2012-10-30 Round Rock Research, Llc High density integrated circuitry for semiconductor memory having memory cells with a minimum capable photolithographic feature dimension

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