JPS60411A - Laser module device - Google Patents

Laser module device

Info

Publication number
JPS60411A
JPS60411A JP58108733A JP10873383A JPS60411A JP S60411 A JPS60411 A JP S60411A JP 58108733 A JP58108733 A JP 58108733A JP 10873383 A JP10873383 A JP 10873383A JP S60411 A JPS60411 A JP S60411A
Authority
JP
Japan
Prior art keywords
lens
optical
semiconductor laser
incident
condensing lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58108733A
Other languages
Japanese (ja)
Inventor
Takao Funahashi
鮒橋 隆夫
Osamu Kato
修 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58108733A priority Critical patent/JPS60411A/en
Publication of JPS60411A publication Critical patent/JPS60411A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback

Abstract

PURPOSE:To attenuate a reflected light from an optical fiber incident end and a condensing lens incident end by placing an optical attenuator between a semiconductor laser and a condensing lens, and inclining diagonally the semiconductor laser against an optical axis in the direction parallel to its hetero junction surface. CONSTITUTION:An incident end face (e) of an optical fiber 4 is polished diagonally. A cylindrical condensing lens 5 is formed so that is refractive index becomes smaller gradually extending from the center axis to the outside circumference. An optical attenuator 6 whose attenuation ratio is about 1/10 is placed in the vicinity of the incident end of the lens 5. As for a semiconductor laser 7, a hetero junction surface 9 of a chip 9 is on a plane containing the lens 5, and its optical axis is inclined and placed diagonally about 10 deg. against the optical axis of the lens 5. In this way, an emitted light of the laser 7 is condenced to the incident surface of the fiber 4 by the lens 5, and made incident efficiently to the fiber 4. On the other hand, a light reflected by the end face (e) and an incident and emitting end face C of the lens 5 is attenuated by the attenuator 6. Also, a light reflected by the end face C and the surface of the attenuator 6 does not return to the laser 7. Therefore, deterioration of a characteristic of the laser 7 can be prevented.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、光通信等に利用するレーザモジュール装置に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a laser module device used for optical communications and the like.

従来例の構成とその問題点 第1図は従来のレーザモジュール装置を示している。以
下にこの従来例の構成について第1図とともに説明する
Structure of a conventional example and its problems FIG. 1 shows a conventional laser module device. The configuration of this conventional example will be explained below with reference to FIG. 1.

第1図において1は円柱状の光コアイノくであり、この
光フアイバ10入射端面ば斜めに研磨されている。2は
上記光ファイバ】と同一光軸上にある円柱状の集光レン
ズであり、この集光し/ズ2の入射端には集光レンズ2
の円柱部の半径とほぼ等しい半径の半球が一体に形成さ
れている。3は光ファイバ1、集光レンズ2と同一光軸
上にある半導体レーザである。なお、上記集光レンズ2
は中心軸から外周に行くに従って屈折率が小さくなる円
柱型の集光レンズである。
In FIG. 1, reference numeral 1 denotes a cylindrical optical core, and the input end surface of this optical fiber 10 is polished obliquely. 2 is a cylindrical condensing lens located on the same optical axis as the above-mentioned optical fiber.
A hemisphere with a radius approximately equal to the radius of the cylindrical portion is integrally formed. 3 is a semiconductor laser located on the same optical axis as the optical fiber 1 and the condenser lens 2. In addition, the above-mentioned condensing lens 2
is a cylindrical condensing lens whose refractive index decreases from the central axis toward the outer periphery.

次に上記従来例の動作について説明する。第1図におい
て、半導体レーザ3の出射光は集光レンズ2により集光
され、光コアイノ(lに効率よく入射される。この場合
、半導体レーザ3の出射光が集光レンズ2の入射端(C
)で反射し、半導体レーヤ゛3に戻らないよう、入射端
(C)は半円形となっている。更に光ファイバ1の入射
端(d)での反射光力玉乗光レンズ2により再び集光さ
れ、半導体レーザ3に戻らないよう光ファイ・く1の入
射端面(d)はlO0前後光軸aよシ斜めになっている
Next, the operation of the above conventional example will be explained. In FIG. 1, the emitted light of the semiconductor laser 3 is condensed by the condensing lens 2 and is efficiently incident on the optical core ino (l). C
) to prevent the light from returning to the semiconductor layer 3, the incident end (C) is semicircular. Furthermore, the input end face (d) of the optical fiber 1 is aligned with the optical axis a around 1O0 so that the reflected light at the input end (d) of the optical fiber 1 is re-focused by the ballistic optical lens 2 and does not return to the semiconductor laser 3. It is slanted.

しかしながら、上記従来例においては光ファイバlの入
射端面を斜めにし、集光レンズ2の入射端を半円形とし
ても実用上集光し/ズ2の収差により光ファイバ端から
の反射光、集光レンズの出射端(b)からの反射光、半
円球の一部からの反射光が半導体レーザ3のチップ上に
戻り、完全に反射光による半導体レーザ3の特性劣化を
なくすことはできない欠点があり、また集光レンズ2の
先端を半円球とした先球集光レンズは加工がむずがしい
等の欠点があった。
However, in the above conventional example, even if the input end surface of the optical fiber 1 is made oblique and the input end of the condenser lens 2 is made semicircular, the light is practically condensed. The reflected light from the output end (b) of the lens and the reflected light from a part of the semicircle return onto the chip of the semiconductor laser 3, which has the disadvantage that it is not possible to completely eliminate the characteristic deterioration of the semiconductor laser 3 due to the reflected light. In addition, the spherical condensing lens in which the tip of the condensing lens 2 has a semicircular shape has drawbacks such as being difficult to process.

発明の目的 本発明は、上記従来例の欠点を除去するものであシ、光
ファイバの入射端面、集光レンズの入出射端面の反射光
が半導体レーザチップ上に戻らないことを目的とするも
のである。
Purpose of the Invention The present invention aims to eliminate the drawbacks of the above-mentioned conventional example, and aims to prevent reflected light from the input end face of an optical fiber and the input/output end face of a condensing lens from returning onto a semiconductor laser chip. It is.

発明の構成 本発明は上記目的を達するため1(、半導体レーザと集
光レンズの間に光減衰器をおき、半導体レーザをそのヘ
テロ接合面に平行な方向に光軸に対し斜めに傾けておく
ことにより、光フアイバ入射端、集光レンズ人出射端か
らの反射光が半導体レーザ′チップ上に戻らないように
する効果を得るものである。
Structure of the Invention In order to achieve the above-mentioned objects, the present invention includes (1) an optical attenuator is placed between the semiconductor laser and the condensing lens, and the semiconductor laser is tilted obliquely to the optical axis in a direction parallel to its heterojunction surface; This provides the effect of preventing reflected light from the input end of the optical fiber and the output end of the condenser lens from returning onto the semiconductor laser chip.

実施例の説明 以下に本発明の一実施例の構成について図面とともに説
明する。第2図において、4は光ファイバでその入射端
面(e)は斜めに研磨されている。5は円柱状の集光レ
ンズであり、この集光レンズ5は中心軸から外周に行く
に従って屈折率が小さくなるレンズである。6は集光レ
ンズ5の入射端匠近接して置かれた減衰比1710前後
の光減衰器、7はへテロ接合面が集光レンズ5を含む平
面上にあり、光軸が集光レンズ50光軸に対して100
前後斜めに傾いて置かれた半導体レーザである。
DESCRIPTION OF THE EMBODIMENTS The configuration of an embodiment of the present invention will be described below with reference to the drawings. In FIG. 2, 4 is an optical fiber whose input end face (e) is obliquely polished. Reference numeral 5 denotes a cylindrical condensing lens, and the condensing lens 5 is a lens whose refractive index decreases from the central axis toward the outer periphery. Reference numeral 6 denotes an optical attenuator with an attenuation ratio of around 1710, which is placed close to the entrance edge of the condenser lens 5; 7, the heterojunction surface is on a plane that includes the condenser lens 5; the optical axis is the condenser lens 50; 100 to the optical axis
This is a semiconductor laser placed obliquely in front and back.

第3図は上記実施例の集光レンズ5の光軸(a)と半導
体レーザ7の光軸fを角度θだけ傾けた場合のレーザ光
の反射経路を説明する図である。また第4図は第3図を
右方向より見た図である。半導体レーザ7のチップ8の
へテロ接合面9に平行な方向に出射された最も外側の光
(d)と(elは集光レンズ1に各々角度α、βで入射
し反射され、反射光(bL (C)となる。ここでレー
ザ光の最大出射角をφとするとφ〈elなる関係が成立
する範囲では、反射光(b)は半導体レーザ7のチップ
上に戻らないことは明らかである。故に半導体レーザ7
のヘテ\ 口界面に平行な方向の出射角は最大でも10
°前後であるから、光軸fの傾きθを上記最大出射角よ
りも犬きくすることにより、集光レンズ5及び光減衰器
6端面からの反射光が半導体レーザ7に戻らないように
できる。なお、第4図において10は集光レンズ5の入
射端面におけるニアフィールドパターンである。
FIG. 3 is a diagram illustrating the reflection path of laser light when the optical axis (a) of the condensing lens 5 and the optical axis f of the semiconductor laser 7 of the above embodiment are tilted by an angle θ. 4 is a view of FIG. 3 viewed from the right side. The outermost lights (d) and (el) emitted in a direction parallel to the heterojunction surface 9 of the chip 8 of the semiconductor laser 7 are incident on the condenser lens 1 at angles α and β, respectively, and are reflected, resulting in reflected light ( bL (C) Here, if the maximum emission angle of the laser beam is φ, it is clear that the reflected light (b) does not return to the chip of the semiconductor laser 7 within the range where the relationship φ<el holds. .Therefore, semiconductor laser 7
The output angle in the direction parallel to the mouth interface is at most 10
By making the inclination θ of the optical axis f much larger than the maximum output angle, it is possible to prevent the reflected light from the end faces of the condenser lens 5 and the optical attenuator 6 from returning to the semiconductor laser 7. In FIG. 4, reference numeral 10 indicates a near field pattern on the incident end surface of the condenser lens 5. In FIG.

次に上記実施例の動作について説明する。Next, the operation of the above embodiment will be explained.

半導体レーザ7の出射光は集光レンズ5で光ファイバ4
0入射面に集光され、効率良く光ファイバ4に入射する
。一方、集光された光の内−郎党ファイバ4の入射端面
(e)、集光し/ズ5の入出射端面(C)より反射され
るが光減衰器6により減衰され、半導体レーザ7には戻
らない。また半導体レーザ7の出射光は集光レンズ50
入射端面(C)と光減衰器6面で反射するが、集光レン
ズ5と半導体レーザ7の光軸が傾いているため、半導体
レーザ7には戻らないものである。
The emitted light from the semiconductor laser 7 is sent to the optical fiber 4 through the condensing lens 5.
The light is focused on the zero incidence plane and efficiently enters the optical fiber 4. On the other hand, the condensed light is reflected from the input end face (e) of the inner fiber 4 and the input/output end face (C) of the condensing fiber 4, but is attenuated by the optical attenuator 6 and transmitted to the semiconductor laser 7. won't return. Furthermore, the light emitted from the semiconductor laser 7 is transmitted through a condensing lens 50.
Although it is reflected by the incident end face (C) and the optical attenuator 6, it does not return to the semiconductor laser 7 because the optical axes of the condenser lens 5 and the semiconductor laser 7 are tilted.

このように、上記実施例によれば、集光レンズ5の入射
端面前に光減衰器6を配置しているため、光ファイバ4
の入射端面と集光レンズ5の入出射端面から半導体レー
ザ7のチップ上に戻る反射光を減衰させ、半導体レーザ
7の特性劣化を防ぐことができる。まだ、本実施例によ
れば光コネクタ、光受光素子等の光部品からの遠端反射
光もある程度防ぐことができる。また、本実施例によれ
ば、従来例のように、集光レンズ5の一端を半球状に加
工する必要がないため、加工が容易となるものである。
In this way, according to the above embodiment, since the optical attenuator 6 is disposed in front of the incident end face of the condenser lens 5, the optical fiber 4
It is possible to attenuate the reflected light returning onto the chip of the semiconductor laser 7 from the incident end face of the condenser lens 5 and the input/output end face of the condensing lens 5, thereby preventing deterioration of the characteristics of the semiconductor laser 7. However, according to this embodiment, far-end reflected light from optical components such as optical connectors and light receiving elements can be prevented to some extent. Further, according to the present embodiment, there is no need to process one end of the condenser lens 5 into a hemispherical shape as in the conventional example, so that the process becomes easy.

発明の効果 本発明は上記のような構成であり、本発明によれば、半
導体レーザと光ファイバの結合系(光ファイバを含む)
よシ反射する光が半導体レーザに戻ることができ、半導
体レーザの特性劣化を防止することができる。
Effects of the Invention The present invention has the above configuration, and according to the present invention, a coupling system of a semiconductor laser and an optical fiber (including an optical fiber) is provided.
The reflected light can be returned to the semiconductor laser, and deterioration of the characteristics of the semiconductor laser can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のレーザモジュール装置の概略説明図、第
2図は本発明の一実施例におけるレーザモジュール装置
の概略説明図、第3図は同装置のレーザ光の反射経路の
説明図、第4図は第3図の右側面図である。 4・・・光ファイバ、5・・集光レンズ、6・・光減衰
器、7・・・半導体レーザ、8・チップ、9・・ヘテロ
接合面。 代理人の氏名 弁理士 中 尾 敏 男 はが1名第1
図 第2図 χ 勺 第3図 第4図
FIG. 1 is a schematic explanatory diagram of a conventional laser module device, FIG. 2 is a schematic explanatory diagram of a laser module device according to an embodiment of the present invention, FIG. 3 is an explanatory diagram of a reflection path of a laser beam of the same device, FIG. 4 is a right side view of FIG. 3. 4... Optical fiber, 5... Condensing lens, 6... Optical attenuator, 7... Semiconductor laser, 8... Chip, 9... Heterojunction surface. Name of agent: Patent attorney Toshio Nakao (1st person)
Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 中心軸から外周に行くに従って屈折率が小さくなる円柱
型の集光レンズと、この集光レンズの光軸を含む平面上
にペテロ接合面を有し、光軸が上記集光レンズの光軸に
対して所定角度で交差する半導体レーザと、傾斜した入
射面を有し、この入射端面が上記集光レンズの集光点に
配置された光ファイバーと、上記集光レンズの入射端面
と上記半導体レーザとの間に介在された光減衰器とから
なるレーザモジュール装置。
A cylindrical condensing lens whose refractive index decreases as it goes from the central axis to the outer periphery, and a Peter junction surface on a plane that includes the optical axis of this condensing lens, and the optical axis is aligned with the optical axis of the condensing lens. a semiconductor laser that intersects at a predetermined angle with respect to the optical fiber; an optical fiber having an inclined incident surface, the incident end surface of which is disposed at the condensing point of the condensing lens; A laser module device comprising an optical attenuator interposed between the laser module and the optical attenuator.
JP58108733A 1983-06-16 1983-06-16 Laser module device Pending JPS60411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58108733A JPS60411A (en) 1983-06-16 1983-06-16 Laser module device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58108733A JPS60411A (en) 1983-06-16 1983-06-16 Laser module device

Publications (1)

Publication Number Publication Date
JPS60411A true JPS60411A (en) 1985-01-05

Family

ID=14492147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58108733A Pending JPS60411A (en) 1983-06-16 1983-06-16 Laser module device

Country Status (1)

Country Link
JP (1) JPS60411A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6452331U (en) * 1987-09-28 1989-03-31
JPH01292877A (en) * 1988-05-20 1989-11-27 Nec Corp Semiconductor laser and optical fiber coupling circuit
JPH02281219A (en) * 1989-04-21 1990-11-16 Matsushita Electric Ind Co Ltd Light emitting element module
JPH0520016U (en) * 1991-08-28 1993-03-12 アルプス電気株式会社 Optical device
JPH05295439A (en) * 1992-04-22 1993-11-09 Nippon Steel Corp Production of grain-oriented silicon steel sheet having high magnetic flux density
US5883915A (en) * 1995-05-16 1999-03-16 Adlas Gmbh & Co. Kg Longitudinally pumped laser
US6356613B1 (en) * 1997-02-07 2002-03-12 Siemens Aktiengesellschaft Apparatus for the recombination of hydrogen in a gas mixture
EP3484144A1 (en) 2017-11-13 2019-05-15 Alpine Electronics, Inc. Captured image display system, electronic mirror system, and captured image display method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6452331U (en) * 1987-09-28 1989-03-31
JPH01292877A (en) * 1988-05-20 1989-11-27 Nec Corp Semiconductor laser and optical fiber coupling circuit
JPH02281219A (en) * 1989-04-21 1990-11-16 Matsushita Electric Ind Co Ltd Light emitting element module
JPH0520016U (en) * 1991-08-28 1993-03-12 アルプス電気株式会社 Optical device
JPH05295439A (en) * 1992-04-22 1993-11-09 Nippon Steel Corp Production of grain-oriented silicon steel sheet having high magnetic flux density
US5883915A (en) * 1995-05-16 1999-03-16 Adlas Gmbh & Co. Kg Longitudinally pumped laser
US6356613B1 (en) * 1997-02-07 2002-03-12 Siemens Aktiengesellschaft Apparatus for the recombination of hydrogen in a gas mixture
EP3484144A1 (en) 2017-11-13 2019-05-15 Alpine Electronics, Inc. Captured image display system, electronic mirror system, and captured image display method

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