JPH03115486A - Organic electroluminescent element - Google Patents

Organic electroluminescent element

Info

Publication number
JPH03115486A
JPH03115486A JP25496089A JP25496089A JPH03115486A JP H03115486 A JPH03115486 A JP H03115486A JP 25496089 A JP25496089 A JP 25496089A JP 25496089 A JP25496089 A JP 25496089A JP H03115486 A JPH03115486 A JP H03115486A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
organic
luminescent
electroluminescent element
transfer layer
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25496089A
Inventor
Takashi Ekusa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain a high yield of an organic electroluminescent element with good characteristics, having an organic thin film layer that withstands a process of forming an upper electrode by using a specified polymer as a luminescent organic dye.
CONSTITUTION: An organic electroluminescent element having an organic thin film prepared by laminating a hole transfer layer and an electron transfer layer, which are made of an organic dye and at least one of which is luminescent, between two electrodes at least one of which is transparent, wherein a polymer having at least two organic dyes of a band gap of at least 3eV combined through a nonconjugated bond (e.g. a carbon-carbon single bond, a hydrocarbon residue, an ester linkage, a carbonyl residue, an amide linkage or an ether linkage) is used as a luminescent organic dye. For example, a luminescent bipyrenyl of formula I is used for the hole transfer layer, and dinitrobifluorenonyl of formula II for the electron transfer layer. This technique gives a high yield of an organic electroluminescent element with good characteristics without suffering a damage to the organic thin film layer when an upper electrode is formed and without causing a reduction in luminous intensity and short circuit.
COPYRIGHT: (C)1991,JPO&Japio
JP25496089A 1989-09-29 1989-09-29 Organic electroluminescent element Pending JPH03115486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25496089A JPH03115486A (en) 1989-09-29 1989-09-29 Organic electroluminescent element

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP25496089A JPH03115486A (en) 1989-09-29 1989-09-29 Organic electroluminescent element
EP19900303351 EP0390551B1 (en) 1989-03-31 1990-03-29 Organic electroluminescent device
DE1990627697 DE69027697T2 (en) 1989-03-31 1990-03-29 An organic electroluminescent device
DE1990627697 DE69027697D1 (en) 1989-03-31 1990-03-29 An organic electroluminescent device
US07921379 US5294810A (en) 1989-03-31 1992-07-30 Organic electroluminescent device

Publications (1)

Publication Number Publication Date
JPH03115486A true true JPH03115486A (en) 1991-05-16

Family

ID=17272260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25496089A Pending JPH03115486A (en) 1989-09-29 1989-09-29 Organic electroluminescent element

Country Status (1)

Country Link
JP (1) JPH03115486A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489638B2 (en) 2000-06-23 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6677621B2 (en) 2000-05-22 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electrical appliance
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7372199B2 (en) 2000-08-28 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and image playback device having triplet and singlet compounds in electroluminescent layer
US7400087B2 (en) 2000-06-05 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677621B2 (en) 2000-05-22 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electrical appliance
US8674599B2 (en) 2000-06-05 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having fluorescence and phosphoresence compound
US9564472B2 (en) 2000-06-05 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9362343B2 (en) 2000-06-05 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Iridium-containing active-matrix EL display module
US7400087B2 (en) 2000-06-05 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers
US7915808B2 (en) 2000-06-05 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device including EL elements for emitting lights of different colors
US8907559B2 (en) 2000-06-05 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display portion with plural pixels
US8304985B2 (en) 2000-06-05 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having singlet and triplet compounds with different emission colors
US9917141B2 (en) 2000-06-05 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having singlet and triplet compounds
US6489638B2 (en) 2000-06-23 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8415876B2 (en) 2000-08-28 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and display comprising light emitting device
US8049418B2 (en) 2000-08-28 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising triplet compound in electroluminescent layer
US8975813B2 (en) 2000-08-28 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7372199B2 (en) 2000-08-28 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and image playback device having triplet and singlet compounds in electroluminescent layer

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