JPH03112890A - Method for vapor epitaxial growth - Google Patents
Method for vapor epitaxial growthInfo
- Publication number
- JPH03112890A JPH03112890A JP24969189A JP24969189A JPH03112890A JP H03112890 A JPH03112890 A JP H03112890A JP 24969189 A JP24969189 A JP 24969189A JP 24969189 A JP24969189 A JP 24969189A JP H03112890 A JPH03112890 A JP H03112890A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- disilane
- raw material
- linear velocity
- crystal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 26
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000012808 vapor phase Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 14
- 239000002994 raw material Substances 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 7
- 239000011261 inert gas Substances 0.000 abstract description 2
- 238000007865 diluting Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 235000012771 pancakes Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
イ）発明の目的
〔産業上の利用分野〕
本発明は、Ｓｉ単結晶基板上に、Ｓｉｌ結晶膜を成長す
る気相エピタキシャル成長法に関する。DETAILED DESCRIPTION OF THE INVENTION A) Object of the Invention [Field of Industrial Application] The present invention relates to a vapor phase epitaxial growth method for growing a Sil crystal film on a Si single crystal substrate.
半導体集積回路（ＩＣ）の製造において、Ｓｉ気相エピ
タキシャル成長法は重要なプロセスの１つである。この
方法は、通常１０００°Ｃ以上の高温で行われるため、
Ｓｉ単結晶基板中の不純物（ドーパント）が、オートド
ーピング、固相拡散により、エピタキシャル成長した単
結晶膜中に入り込む等の問題点があった。この問題を解
決するために、種々の低温化方法が開発されている。In the manufacture of semiconductor integrated circuits (ICs), Si vapor phase epitaxial growth is one of the important processes. This method is usually carried out at a high temperature of 1000°C or higher, so
There have been problems such as impurities (dopants) in the Si single crystal substrate entering the epitaxially grown single crystal film due to autodoping and solid phase diffusion. In order to solve this problem, various low temperature methods have been developed.
代表的なものの１つが、分解し易いガスを原料として、
用いるというもので、ジシラン（Ｓｉｚｌｌｂ）を原料
とした場合、常圧では７００°Ｃまでエピタキシャル成
長することが明らかになっている。One of the representative methods is to use gas that is easily decomposed as a raw material.
It has been revealed that when disilane (Sizllb) is used as a raw material, epitaxial growth can occur up to 700°C at normal pressure.
従来の方法では、低温下例えば７００°Ｃで得られた膜
は、単結晶ではあっても、欠陥が１０’ケ／ ｃｄ以上
あり、工業的に使用できる膜ではなかった。又、膜の堆
積速度（成長速度）も０．Ｏ１μｍ／ Ｉｌｉ ｎ と
遅かった。In the conventional method, a film obtained at a low temperature, for example, 700°C, has defects of 10'/cd or more even if it is a single crystal, and is not a film that can be used industrially. Also, the deposition rate (growth rate) of the film is 0. It was slow at O1μm/Ilin.
一方、エピタキシャル成長温度を高くすれば、欠陥が減
少することが判っているが、９００°Ｃ以上では低温化
の効果が薄くなり、９００℃における堆積速度は０．８
μｍ ／ １１１１ ｎ位であり、十分とは言えない。On the other hand, it is known that increasing the epitaxial growth temperature reduces defects, but the effect of lowering the temperature becomes weaker at temperatures above 900°C, and the deposition rate at 900°C is 0.8°C.
It is on the order of μm/1111 n, which cannot be said to be sufficient.
口）発明の構成
〔問題点を解決する手段〕
本発明は、希釈したジシラン（以下、原料ガスとも言う
）を用いてＳｉ単結晶基板上に、Ｓｉ単結晶膜をエピタ
キシャル成長させる際に、希釈したジシランの線速か５
〜１００ ｃｍ／ｗｉｎであることを特徴とする気相エ
ピタキシャル成長方法である。(1) Structure of the invention [Means for solving the problems] The present invention provides a method for epitaxially growing a Si single-crystal film on a Si single-crystal substrate using diluted disilane (hereinafter also referred to as source gas). Linear speed of disilane 5
This is a vapor phase epitaxial growth method characterized by a growth rate of ~100 cm/win.
本発明においてジシランは高純度のものが好ましい。原
料ガスにおけるジシランの濃度は、好ましくはＯ，０Ｏ
ＩＶｏ１％からｌ Ｖｏ１％まで、必要とする堆積速度
に応じて変えることが出来るが、０゜００２νｏ１％か
らＱ、５Ｖｏ１％が更に好ましい。In the present invention, disilane with high purity is preferred. The concentration of disilane in the raw material gas is preferably O, 0O
It can be varied from IVo1% to lVo1% depending on the required deposition rate, but it is more preferably from 0°002νo1% to Q,5Vo1%.
原料ガスにおける希釈ガスとしては、Ｈ２およびＨ，、
Ａ、等の不活性ガスを用いることが出来るが、安価なＨ
ｚが好ましい。As the diluent gas in the raw material gas, H2 and H,
Although inert gases such as A, etc. can be used, inexpensive H
z is preferred.
原料ガスの線速は、５〜１００ ｃｍ／ｗｉｎ 、好ま
しくは１０〜５０ ｃｍ／ｌｌ１ｎである。５ｃｍ／ｌ
ｌｌ１ｎ未満では結晶成長に充分な量を供給する事が出
来ず、１００ ｃｍ ／ ａｋｉｎを超えると得られる
結晶膜に堆積欠陥が生じる。The linear velocity of the raw material gas is 5 to 100 cm/win, preferably 10 to 50 cm/ll1n. 5cm/l
If it is less than ll1n, a sufficient amount cannot be supplied for crystal growth, and if it exceeds 100 cm/akin, deposition defects will occur in the resulting crystal film.
エピタキシャル成長温度は、５００°Ｃから１２００°
Ｃ１好ましくは６００°Ｃから１０００″Ｃである。Epitaxial growth temperature is 500°C to 1200°
C1 is preferably 600°C to 1000″C.
反応器の形状は、本発明の線速を実現できるものであれ
ばよいが、通常、横型、縦型、バレル型、パンケーキ型
（竪型）を用いることが出来る。The shape of the reactor may be any shape as long as it can achieve the linear velocity of the present invention, and generally horizontal, vertical, barrel, and pancake (vertical) shapes can be used.
好ましくは、パンケーキ型である。Preferably, it is a pancake type.
Ｓｉ単結晶基板は、ガス流に対して、平行、垂直あるい
はその中間（傾斜）等、種々の置き方、並べ方をとるこ
とが可能である。平行以外の置き方が好ましい。The Si single crystal substrates can be placed and arranged in various ways, such as parallel to, perpendicular to, or somewhere in between (tilted) with respect to the gas flow. A placement other than parallel is preferred.
実施例１゜
２″面方位（１００）、Ｎ型（ｓｂドープ）のＳｉ単結
晶基板を、ＳｉＣコートしたカーボン製サセプター（支
持台）上に載せ、竪型円筒状石英製反応管中に設置した
。常圧下で、Ｈ２を１５０Ｑｃｃ／ｎｉｎで流し、高周
波加熱によりＳｉ基板を１０５０°Ｃまで昇温し、この
状態で１０分間加熱を続けた。Example 1 An N-type (sb-doped) Si single crystal substrate with a 2″ plane orientation (100) was placed on a SiC-coated carbon susceptor (supporting stand) and placed in a vertical cylindrical quartz reaction tube. Under normal pressure, H2 was flowed at 150 Qcc/nin, the temperature of the Si substrate was raised to 1050°C by high frequency heating, and heating was continued in this state for 10 minutes.
この後、基板温度を７００ ’Ｃまで下げた後、Ｈｔ
１．５００ ｃｃ／１ＩＩｉｎとジシラン２ｃｃ／ｗｉ
ｎの原料ガスを６０分間流した。この時の原料ガスの線
速は３０ｃｍ／ｎ＋ｉｎであった。After this, after lowering the substrate temperature to 700'C, Ht
1.500 cc/1IIin and disilane 2cc/wi
n raw material gas was flowed for 60 minutes. The linear velocity of the raw material gas at this time was 30 cm/n+in.
得られた膜は、完全な鏡面であり、反射電子線回折の結
果、菊池線が見られ、完全な単結晶であることが判った
。Ｓ ｅｃｃｏエッチしたところ、積層欠陥等の欠陥は
見られなかった。堆積速度は０．０４μｍ ／ １１１
ｎと十分大きな値であった。なお、この膜の光学顕微
鏡写真及び２反射電子回折は第１図及び第２図の通りで
あった。The obtained film had a perfect mirror surface, and as a result of reflection electron beam diffraction, Kikuchi lines were observed, indicating that it was a perfect single crystal. When Secco etching was performed, no defects such as stacking faults were observed. Deposition rate is 0.04μm/111
n, which was a sufficiently large value. The optical micrograph and two-reflection electron diffraction of this film were as shown in FIGS. 1 and 2.
実施例２゜
エピタキシャル成長温度を９００°Ｃ、ジシランの流量
を６ｃｃ／ｎ＋ｉｎ （原料ガス線速３０ｃｍ／５ｉ
ｎ）とした以外は、実施例１と同様の実験を行った。Example 2 Epitaxial growth temperature was 900°C, disilane flow rate was 6cc/n+in (raw material gas linear velocity 30cm/5i
An experiment similar to that in Example 1 was conducted except that n).
得られた膜は、欠陥のない完全な単結晶であった。堆積
速度は、１．３μｍ／ｍｉｎと非常に大きな値となった
。The obtained film was a perfect single crystal without any defects. The deposition rate was a very high value of 1.3 μm/min.
ハ）発明の効果
本発明は、希釈したジシランの線速を５〜１０Ｑｃｍ／
ｓｉｎとする事により、欠陥のない完全性の高いＳｉ単
結晶膜をＳｉ単結晶基板上に低温下かつ大きな堆積速度
で堆積させることが出来、工業的に非常に有用なエピタ
キシャル成長方法である。C) Effects of the invention The present invention improves the linear velocity of diluted disilane from 5 to 10 Qcm/
By using sin, it is possible to deposit a defect-free and highly perfect Si single crystal film on a Si single crystal substrate at a low temperature and at a high deposition rate, making it an industrially very useful epitaxial growth method.
第１図は実施例１で得られたＳｉ単結晶膜の光学顕微鏡
写真であり、第２図は同結晶膜の反射電子線回折である
。FIG. 1 is an optical micrograph of the Si single crystal film obtained in Example 1, and FIG. 2 is a backscattered electron beam diffraction of the same crystal film.
Claims (1)
ｉ単結晶膜をエピタキシャル成長させる際に、希釈した
ジシランの線速が５〜１００ｃｍ／ｍｉｎであることを
特徴とする気相エピタキシャル成長方法。1. S is deposited on a Si single crystal substrate using diluted disilane.
i. A vapor phase epitaxial growth method characterized in that the linear velocity of diluted disilane is 5 to 100 cm/min when epitaxially growing a single crystal film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24969189A JPH0641399B2 (en) | 1989-09-26 | 1989-09-26 | Vapor phase epitaxial growth method |
| US07/588,220 US5221412A (en) | 1989-09-26 | 1990-09-26 | Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24969189A JPH0641399B2 (en) | 1989-09-26 | 1989-09-26 | Vapor phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03112890A true JPH03112890A (en) | 1991-05-14 |
| JPH0641399B2 JPH0641399B2 (en) | 1994-06-01 |
Family
ID=17196770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24969189A Expired - Fee Related JPH0641399B2 (en) | 1989-09-26 | 1989-09-26 | Vapor phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0641399B2 (en) |
-
1989
- 1989-09-26 JP JP24969189A patent/JPH0641399B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0641399B2 (en) | 1994-06-01 |
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