JPH03109362U - - Google Patents
Info
- Publication number
- JPH03109362U JPH03109362U JP1840590U JP1840590U JPH03109362U JP H03109362 U JPH03109362 U JP H03109362U JP 1840590 U JP1840590 U JP 1840590U JP 1840590 U JP1840590 U JP 1840590U JP H03109362 U JPH03109362 U JP H03109362U
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor laser
- laser
- light receiving
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Optical Head (AREA)
Description
第１図は本考案の一実施例を示す平面図、第２
図はその正面図である。 主な図番の説明、１…半導体レーザー素子、３
…受光素子、４…金属基板、８…表層。
図はその正面図である。 主な図番の説明、１…半導体レーザー素子、３
…受光素子、４…金属基板、８…表層。
Claims (1)
- レーザー光を前方及び後方に出射する半導体レ
ーザー素子と、該半導体レーザー素子の後方から
出射されるレーザー光を受光し、そのレーザー光
の光強度を検出する為のモニター用の受光素子と
が設けられた半導体レーザー装置であつて、前記
半導体レーザー素子の後方から出射されるレーザ
ー光の出射口と前記受光素子の受光面との間隙を
透明材料により埋めたことを特徴とする半導体レ
ーザー装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1840590U JPH03109362U (ja) | 1990-02-26 | 1990-02-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1840590U JPH03109362U (ja) | 1990-02-26 | 1990-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03109362U true JPH03109362U (ja) | 1991-11-11 |
Family
ID=31521565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1840590U Pending JPH03109362U (ja) | 1990-02-26 | 1990-02-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03109362U (ja) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244895A (ja) * | 1987-03-31 | 1988-10-12 | Mitsubishi Electric Corp | 半導体レ−ザの組立方法 |
| JPS6428882A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Photoelectronic device, manufacture thereof, and lead frame used in same manufacture |
| JPH01185989A (ja) * | 1988-01-21 | 1989-07-25 | Canon Inc | 半導体レーザー装置 |
| JPH01222492A (ja) * | 1988-03-01 | 1989-09-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
-
1990
- 1990-02-26 JP JP1840590U patent/JPH03109362U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244895A (ja) * | 1987-03-31 | 1988-10-12 | Mitsubishi Electric Corp | 半導体レ−ザの組立方法 |
| JPS6428882A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Photoelectronic device, manufacture thereof, and lead frame used in same manufacture |
| JPH01185989A (ja) * | 1988-01-21 | 1989-07-25 | Canon Inc | 半導体レーザー装置 |
| JPH01222492A (ja) * | 1988-03-01 | 1989-09-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |