JPH03108643A - Apparatus for inspecting metallic wiring for semiconductor device - Google Patents

Apparatus for inspecting metallic wiring for semiconductor device

Info

Publication number
JPH03108643A
JPH03108643A JP14159589A JP14159589A JPH03108643A JP H03108643 A JPH03108643 A JP H03108643A JP 14159589 A JP14159589 A JP 14159589A JP 14159589 A JP14159589 A JP 14159589A JP H03108643 A JPH03108643 A JP H03108643A
Authority
JP
Japan
Prior art keywords
metal wiring
inspected
camera
signal output
spots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14159589A
Other languages
Japanese (ja)
Inventor
Yoshitomo Hayashi
善智 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP14159589A priority Critical patent/JPH03108643A/en
Publication of JPH03108643A publication Critical patent/JPH03108643A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To automatically measure sizes and the number of hillocks and identify their height and steepness by attaching a TV camera to an optical microscope and image-processing its signal output. CONSTITUTION:A TV camera 2 is fixed on top of an optical microscope 1, the signal output line 2a of the camera 2 is connected to an image processor 3, the signal output line 3a of the processor 3 is connected to a monitor TV 4, and a specimen 5 to be inspected is mounted on a specimen mount 6 and then inspected. If a magnification of the microscope 1 is set at low to widen a field of view while concentration contrast of a signal output A of the camera 2 is strengthened, hillocks 11 can be displayed in spots on the TV 4 wherein diameter sizes and the number of the spots are read by the processor 3 to be automatically measured in line. Or if a transparent insulation coating 15 is deposited on a metallic wiring 16 of the specimen 5 and displayed in a normal contrast at a high magnification, steep hillocks 11 and low hillocks 14 can be distinguished from each other.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体デバイス用の金属配線、特に、金属配線
表面のビルロックの検査装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to metal wiring for semiconductor devices, and particularly to an apparatus for inspecting billrock on the surface of metal wiring.

〔従来の技術〕[Conventional technology]

半導体デバイスの製造プロセスにおいて、半導体デバイ
ス上に形成されたM配線等の金属配線が、製造プロセス
で加わる温度サイクルによって、熱歪と再結晶とによっ
て突起が生じる、所謂、ビルロックが発生することがあ
る。このビルロックが発生すると、配線間、眉間の絶縁
不良の原因となる。このことは、特に、多層配線構造で
問題となっている。
In the manufacturing process of semiconductor devices, metal wiring such as M wiring formed on the semiconductor device is subjected to temperature cycles during the manufacturing process, which causes protrusions due to thermal strain and recrystallization, which is a so-called billlock. be. When this bill lock occurs, it causes poor insulation between the wiring and between the eyebrows. This is particularly a problem in multilayer wiring structures.

従来、このビルロックの検査方法としては、以下の方法
が行われている。
Conventionally, the following methods have been used to inspect this building lock.

(1)作業者が光学顕微鏡によって金属配線を目視し、
ビルロックの大きさ (上から見た径)と個数を計測す
る。特に、その大きさを正しく計測する場合は測微光学
顕微鏡を用い、視野に標尺目盛を置き、これを目標のビ
ルロックの像に合せて移動し、その大きさを読み取るよ
うにする。
(1) The worker visually inspects the metal wiring using an optical microscope,
Measure the size (diameter seen from above) and number of billrocks. In particular, to accurately measure the size of a building rock, use a microscopic optical microscope, place a leveling scale in the field of view, move it in line with the image of the target building rock, and read its size.

(2)電子顕微鏡を用いて金属配線の表面を斜め又は、
水平方向から観察してビルロックの大きさ、高さ、急峻
さを判定する。
(2) Use an electron microscope to examine the surface of the metal wiring diagonally or
Determine the size, height, and steepness of the building rock by observing it from the horizontal direction.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、前述の半導体デバイスの金属配線の検査
方法では、光学l!J微鏡を用いる場合、作業者が、ビ
ルロックの大きさと個数とを目視でもって計測するため
、個人差や計数ミスが発生しやすい問題がある。また、
ビルロックの高さ、急峻さが判定できない欠点がある。
However, in the above-mentioned method for inspecting metal wiring of semiconductor devices, optical l! When using a J-microscope, an operator visually measures the size and number of billrocks, so there is a problem that individual differences and counting errors are likely to occur. Also,
There is a drawback that the height and steepness of the building rock cannot be determined.

電子顕微鏡を用いる場合は、ビルロックの高さ、急峻さ
は判定できるが電子線による損傷が発生し、抜き取りの
破壊検査には良いが、インライン用としては適していな
い、また、双方とも検査に時間がかかる問題がある。
When using an electron microscope, the height and steepness of the building rock can be determined, but damage is caused by the electron beam, and although it is good for sample destructive inspection, it is not suitable for in-line use. There are problems that take time.

本発明の課題は前述の問題点を解決して、インライン用
としてビルロックの大きさ及び個数の自動計測が可能で
、かつ、ビルロックの高さ、急峻さの判定が可能な半導
体デバイス用の金属配線検査装置を提供することにある
The object of the present invention is to solve the above-mentioned problems, and to develop a semiconductor device for in-line use, which is capable of automatically measuring the size and number of billrocks, and also capable of determining the height and steepness of billlocks. An object of the present invention is to provide a metal wiring inspection device.

〔課題を解決するための手段〕[Means to solve the problem]

前述の課題を解決するために、本発明の半導体デバイス
用の金属配線検査装置においては、被検査半導体デバイ
ス (以下被検査体と称する)の金属配線を観測する光
学顕微鏡と、これに取り付けられ、観測された被検査体
の金属配線の表面を撮像するテレビカメラ及びこの像を
ディスプレイするモニタテレビと、このテレビカメラと
モニタテレビとの間に接続され、テレビカメラの信号出
力を濃淡のコントラストを強く処理し、前記モニタテレ
ビに撮像された金属配線の表面に生じたビルロックを斑
点状に写し出させ、この斑点の径の大きさと個数とを読
み取ることが可能な画像処理装置とからなるようにする
In order to solve the above-mentioned problems, the metal wiring inspection apparatus for semiconductor devices of the present invention includes an optical microscope for observing the metal wiring of a semiconductor device to be inspected (hereinafter referred to as an object to be inspected); A television camera that images the surface of the metal wiring of the observed object to be inspected and a monitor television that displays this image are connected between the television camera and the monitor television, and the signal output of the television camera is connected to a television camera that increases the contrast of shading. and an image processing device capable of processing and projecting billrocks generated on the surface of the metal wiring imaged on the monitor television in the form of spots, and reading the diameter size and number of the spots. .

〔作用〕[Effect]

ビルロックの大きさと個数とを計測するには、光学0徽
鏡を低倍率、例えば、X50として視野を広くし、テレ
ビカメラからの信号を画像処理により濃淡のコントラス
トを強くして金属配線の表面をディスプレイすると、ビ
ルロックは斑点状に写し出される (第2図に示す)、
この斑点の径の大きさと個数とを画像処理装置により読
み取ることにより、インラインで自動計測が可能となる
。また、被検査体に透明な絶縁被膜を堆積した後、光学
顕微鏡を高倍率、例えば、X 1000にし、この場合
はコントラストを正常として同表面をディスプレイする
と、高く、かつ、急峻なビルロックの場合は、ビルロッ
クの輪郭と絶縁被膜の輪郭が2重に、もしくは重なって
太く写し出される (第3図(+1)に示す)、このビ
ルロックの輪郭を観察することによりビルロックの高さ
、急峻さの判定が可能となる。なお、多層配[造の場合
、一般に、第1の層と第2の層の配線間に低温CVDに
より透明のSio2等の絶縁被膜を堆積するので、特に
工程を追加する必要はない。
To measure the size and number of billrocks, use an optical mirror with low magnification (for example, When displayed, billrock appears in spots (as shown in Figure 2).
By reading the diameter size and number of spots using an image processing device, automatic in-line measurement becomes possible. In addition, after depositing a transparent insulating film on the object to be inspected, if the optical microscope is set to a high magnification, e.g. In this case, the outline of the building rock and the outline of the insulating coating are double or overlapped and appear thick (as shown in Figure 3 (+1)). By observing the outline of the building rock, it is possible to determine the height and steepness of the building rock. It becomes possible to judge the Note that in the case of a multilayer structure, an insulating film such as transparent Sio2 is generally deposited between the first layer and second layer wiring by low-temperature CVD, so there is no need to add any particular process.

〔実施例〕〔Example〕

第1図は本発明の半導体デバイス用の金属配線検査装置
の一実施例の系統図である。光学顕微鏡1の上部にテレ
ビカメラ2を固定し、テレビカメラ2のイ=号出力線2
aを画像処理装置F3に接続する。
FIG. 1 is a system diagram of an embodiment of a metal wiring inspection apparatus for semiconductor devices according to the present invention. A television camera 2 is fixed on the top of the optical microscope 1, and the i= signal output line 2 of the television camera 2 is connected to the optical microscope 1.
Connect a to the image processing device F3.

更に、画像処理装置3の信号出力線3aをモニタテレビ
4に接続する。被検査体5は光学I微鏡1の試料台6上
に1き検査を行う。
Further, the signal output line 3a of the image processing device 3 is connected to the monitor television 4. The object to be inspected 5 is placed on the sample stage 6 of the optical I-microscope 1 for one-time inspection.

第2図は第1図の半導体デバイス用の金属配線検査装置
によるディスプレイの一例の画像で光学!g1?lA鏡
1を低倍率、例えば、X50として視野を広くし、テレ
ビカメラ2からの信号出力Aを画像処理袋f3により濃
淡のコントラストを強く処理すると、モニタテレビ4に
ビルロックは11に/KTような斑点状に写し出される
。この斑点の径の大きさと個数とを画像処理装置t3に
より読み取ることによりインラインで自動計測が可能と
なる。
Figure 2 is an image of an example of a display produced by the metal wiring inspection system for semiconductor devices shown in Figure 1. Optical! g1? When the field of view is widened by setting the lA mirror 1 to a low magnification, e.g. It appears in spots. By reading the diameter size and number of spots using the image processing device t3, automatic in-line measurement becomes possible.

第3図fatはこの装置による別の例の画像で、同図の
山)はこの画像面におけるA−A断面の被検査体5の断
面図である。第3図中)に示すように、被検査体5の金
属配線16の上に透明な絶縁被膜15を堆積した後、光
学顕微鏡1を高倍率、例えば、×1000にして、この
場合は画像処理装置3のコントラストは正常として、こ
の表面をディスプレイすると、同図中)の13aに示す
ような高く、がっ、急峻なビルロックの場合は、同図(
a)の13に示すように、ビルロックの輪郭と絶縁被膜
の輪郭が2重に、もしくは重なって太く写し出される。
FIG. 3 (fat) is another example of an image obtained by this apparatus, and the mountain in the figure is a cross-sectional view of the object 5 to be inspected taken along the line AA in this image plane. After depositing a transparent insulating film 15 on the metal wiring 16 of the object to be inspected 5, as shown in FIG. Assuming that the contrast of device 3 is normal, when this surface is displayed, in the case of a tall, steep building rock as shown in 13a in the same figure),
As shown in 13 of a), the outline of the building rock and the outline of the insulating coating are displayed thickly, doubly or overlappingly.

これに対し同図中)の14aに示すような低いビルロッ
クの場合は、同図ialの14に示すように、ビルロッ
クの輪郭は細い一本の線で写し出される。これらのビル
ロックの輪郭を観察することによりビルロックの高さ、
急峻さの判定が可能となる。なお、多層配線構造の場合
、一般に、第1の層と第2の層の金属配線間に低温CV
Dにより透明の5t(hの絶縁被膜を堆積するので、特
に工程を追加することなくインラインでビルロックの高
さ、急峻さの判定が可能である。
On the other hand, in the case of a low building rock as shown at 14a in FIG. By observing the contours of these billrocks, the height of the billrocks,
It becomes possible to judge steepness. Note that in the case of a multilayer wiring structure, there is generally a low-temperature CV between the first layer and the second layer of metal wiring.
Since a transparent insulating film of 5t (h) is deposited by D, the height and steepness of the billrock can be determined in-line without any additional steps.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、被検査体観測用の光学!!J微鋺にテ
レビカメラを取り付け、その信号出力を画像処理装置で
処理することにより、ビルロックの径の大きさと個数と
を作業者の目視によらず自動計測するようにしたので、
目視による誤りが完全に解消するとともに検査時間が1
710以下に減少した。
According to the present invention, optics for observing an object to be inspected! ! By attaching a television camera to the J-micro saw and processing its signal output with an image processing device, the diameter and number of building locks can be automatically measured without visual inspection by the operator.
Visual errors are completely eliminated and inspection time is reduced by 1 hour.
It decreased to below 710.

また、従来、インラインでは困難であったビルロックの
高さ、急峻さの判定が、インラインで可能となる。
In addition, it is now possible to judge the height and steepness of a building rock, which was previously difficult to do inline.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の半導体デバイス用の金属配線検査装置
の一実施例の系統図、第2図は第1図の半導体デバイス
用の金属配線検査装置による一例の検査画像の説明図、
第3 ryJTa+は同装置による別の例の検査画像の
説明図、第3図(blはこの検査画像のA−A’断面に
おける被検査体の断面図である。 l:光学顕微鏡 2:テレビカメラ 3:8像処理装置 4:モニタテレビ 5:被検査体 A;信号出力 (テレビカメラの)
FIG. 1 is a system diagram of an embodiment of the metal wiring inspection apparatus for semiconductor devices of the present invention, FIG. 2 is an explanatory diagram of an example of an inspection image by the metal wiring inspection apparatus for semiconductor devices of FIG. 1,
3rd ryJTa+ is an explanatory diagram of another example of an inspection image by the same device; FIG. 3: 8 image processing device 4: Monitor TV 5: Inspected object A; Signal output (of the TV camera)

Claims (1)

【特許請求の範囲】[Claims] 1)被検査半導体デバイス(以下被検査体と称する)の
金属配線を観測する光学顕微鏡と、これに取り付けられ
、観測された被検査体の金属配線の表面を撮像するテレ
ビカメラ及びこの像をディスプレイするモニタテレビと
、このテレビカメラとモニタテレビとの間に接続され、
テレビカメラの信号出力を濃淡のコントラストを強く処
理し、前記モニタテレビに撮像された金属配線の表面に
生じたビルロックを斑点状に写し出させ、この斑点の径
の大きさと個数とを読み取ることが可能な画像処理装置
とからなることを特徴とする半導体デバイス用の金属配
線検査装置。
1) An optical microscope that observes the metal wiring of the semiconductor device to be inspected (hereinafter referred to as the object to be inspected), a television camera attached to this that images the surface of the metal wiring of the observed object to be inspected, and a display that displays this image. connected between this TV camera and the monitor TV,
The signal output from the television camera is processed to have a strong contrast between light and shade, so that the billrock that has formed on the surface of the metal wiring imaged on the monitor television is displayed in the form of spots, and the diameter size and number of these spots can be read. 1. A metal wiring inspection apparatus for semiconductor devices, characterized by comprising an image processing device capable of processing the metal wiring.
JP14159589A 1989-06-02 1989-06-02 Apparatus for inspecting metallic wiring for semiconductor device Pending JPH03108643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14159589A JPH03108643A (en) 1989-06-02 1989-06-02 Apparatus for inspecting metallic wiring for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14159589A JPH03108643A (en) 1989-06-02 1989-06-02 Apparatus for inspecting metallic wiring for semiconductor device

Publications (1)

Publication Number Publication Date
JPH03108643A true JPH03108643A (en) 1991-05-08

Family

ID=15295663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14159589A Pending JPH03108643A (en) 1989-06-02 1989-06-02 Apparatus for inspecting metallic wiring for semiconductor device

Country Status (1)

Country Link
JP (1) JPH03108643A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105987914A (en) * 2015-02-05 2016-10-05 张家港市骏马钢帘线有限公司 Method for detecting decarburization of steel cord wire rod
CN106353326A (en) * 2016-08-12 2017-01-25 京东方科技集团股份有限公司 Method and device for detecting hills in metal layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105987914A (en) * 2015-02-05 2016-10-05 张家港市骏马钢帘线有限公司 Method for detecting decarburization of steel cord wire rod
CN105987914B (en) * 2015-02-05 2019-02-05 张家港市骏马钢帘线有限公司 Steel cord wire rod decarburization detection method
CN106353326A (en) * 2016-08-12 2017-01-25 京东方科技集团股份有限公司 Method and device for detecting hills in metal layer

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