JPH03104856A - Formation of film on porous substrate - Google Patents
Formation of film on porous substrateInfo
- Publication number
- JPH03104856A JPH03104856A JP24160389A JP24160389A JPH03104856A JP H03104856 A JPH03104856 A JP H03104856A JP 24160389 A JP24160389 A JP 24160389A JP 24160389 A JP24160389 A JP 24160389A JP H03104856 A JPH03104856 A JP H03104856A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- porous substrate
- film
- pores
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 54
- 239000011148 porous material Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 19
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 26
- 239000010408 film Substances 0.000 description 50
- 238000004544 sputter deposition Methods 0.000 description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、多数の孔をもつ多孔質基板へ戒膜を施す方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for applying a coating to a porous substrate having a large number of pores.
［従来の技術］
従来、基板へ戒膜を施す技術として、基板の表面に微小
凹凸を形威したのちスパッタリング等により薄膜を被着
させる手段が知られている（特開昭６３−２７４７５４
＞。その他、多孔質基板へ戒膜を施す特別な方法は知ら
れておらず、一般的なスパッタリング法や真空蒸着法等
で孔のない基板へ成膜を施すように、多孔質基板へ戊膜
を施していた。[Prior Art] Conventionally, as a technique for applying a film to a substrate, a method is known in which a thin film is deposited by sputtering or the like after forming minute irregularities on the surface of the substrate (Japanese Patent Laid-Open No. 63-274754).
>. Other than that, there is no known special method for applying a film to a porous substrate, and just as a general sputtering method or vacuum evaporation method is used to form a film on a substrate without holes, a film can be applied to a porous substrate. was giving.
［発明が解決しようとする課題］
特開昭６３−２７４７５４における基板表面に形戒する
微小凹凸は、薄膜の特性に影響を及ぼさない数自六〜数
十六程度のものであり、多孔貿基板の孔と比べて非常に
小さいものである。従って、孔のない基板へ成膜を施す
ようにスパッタリング法等で多孔質基板に成膜を施すと
、第８図に示すように、多孔質基板Ｐが多数の比較的大
きな孔口をもっているため、特に膜１００か薄い場合に
細孔１０１が生じやすかった。[Problems to be Solved by the Invention] The minute irregularities formed on the substrate surface in JP-A No. 63-274754 are of the order of six to six dozen, which do not affect the properties of the thin film, and the porous substrate is It is very small compared to the hole in the hole. Therefore, if a film is formed on a porous substrate by sputtering or the like in the same way as a film is formed on a substrate without holes, as shown in FIG. In particular, when the membrane 100 was thin, pores 101 were likely to occur.
本発明は、上記従来の不具合に鑑みてなされたものであ
って、細孔が生じにくい多孔質基板への成膜方法を提供
することを目的とする。The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a method for forming a film on a porous substrate in which pores are less likely to occur.
［課題を解決するための手段］
本発明の多孔質基板への成膜方法は、多孔質基板の表面
から孔内にボジ型フォトレジストを充填する第１工程と
、該孔以外の該フォトレジストを露光し可溶部を形成す
る第２工程と、該可溶部を除去する第３工程と、該孔内
に該フォトレジストをもつ該多孔質基板の該表面に成膜
を施す第４工程と、該孔内の該フォトレジストを除去す
る第５工程とを順次遂行することを特徴とするものであ
る。[Means for Solving the Problems] The method of forming a film on a porous substrate of the present invention includes a first step of filling the pores with a positive photoresist from the surface of the porous substrate, and filling the photoresist in areas other than the pores. a second step of exposing to light to form a soluble portion, a third step of removing the soluble portion, and a fourth step of forming a film on the surface of the porous substrate having the photoresist in the pores. and a fifth step of removing the photoresist in the hole are sequentially performed.
第１工程では、多孔質基板の表面から孔内にポジ型′ノ
オトレジストを充填する。フォトレジストとしては、ジ
アゾニウム塩系、キノンジアジド系、アジト系等の光分
解型感光性樹脂等のように、露光して感光させることに
よって所定の薬品に可溶になる（ボジ型〉フォトレジス
トを採用することができる。このボジ型フォトレジスト
の充填方法としては、スピンナーの基板保持部に基板を
真空チャックし、基板を回転させながらファｔトレジス
トを滴下する方法を採用することができる。In the first step, a positive type photoresist is filled into the pores from the surface of the porous substrate. Photoresists include diazonium salt-based, quinonediazide-based, azide-based, and other photodegradable photosensitive resins that become soluble in specified chemicals when exposed to light (bodi-type photoresists). As a method for filling the positive photoresist, a method can be adopted in which the substrate is vacuum chucked on the substrate holding part of a spinner and the fat resist is dropped while rotating the substrate.
第２工程では、第１工程終了後、孔以外のフォトレジス
トを感光させ、所定の薬品に可溶な可溶部を形成する。In the second step, after the first step is completed, the photoresist other than the holes is exposed to light to form a soluble portion that is soluble in a predetermined chemical.
孔以外のフォトレジストを感光するためには、多孔質基
板の孔に対して斜め方向から露光することが好ましい。In order to expose the photoresist other than the holes, it is preferable to expose the holes in the porous substrate from an oblique direction.
多孔質基板の孔に対して平行方向から露光すると、光が
表面のフオ］ヘレジストを感光させつつ透過し、孔内の
フォトレジストまで感光させてしまうため、孔内のフォ
トレジストが感光しないようにするためである。When exposed to light from a direction parallel to the holes in a porous substrate, the light passes through the photoresist on the surface while exposing it, and even the photoresist inside the holes is exposed, so make sure that the photoresist inside the holes is not exposed. This is to do so.
第３工程では、第２工程終了後、可溶部を所定の薬品を
用いた現像により除去する。所定の薬品としては、フォ
トレジストの種類によって種々選択できる。これにより
、孔内にのみフォトレジストをもつ多孔質基板が得られ
る。In the third step, after the second step, the soluble portion is removed by development using a predetermined chemical. Various predetermined chemicals can be selected depending on the type of photoresist. This results in a porous substrate with photoresist only within the pores.
第４工程では、第３工程終了後、孔内にフォトレジスト
をもつ多孔質基板の表面に成膜を施す。In the fourth step, after the third step is completed, a film is formed on the surface of the porous substrate having photoresist in the holes.
この戒膜工程は従来と同様のスパッタリング法や真空蒸
着法等を採用することができる。For this film process, conventional sputtering method, vacuum evaporation method, etc. can be employed.
第５工程では、第４工程終了後、孔内のフォトレジスト
を除去する。この除去は、フオトレジストの種類によっ
て選択される所定のレジスト溶解液を用いて行なうこと
ができる。In the fifth step, after the fourth step, the photoresist in the hole is removed. This removal can be performed using a predetermined resist solution selected depending on the type of photoresist.
［作用］
本発明の多孔質基板への成膜方法では、多数の孔内のみ
にフォトレジストが充填された多孔質基仮へスパッタリ
ング法等により成膜を施すため、孔が塞がれて、あたか
も孔のない基板へ成膜を施すＪ；うに多孔質基板に成膜
を施すことができる。[Function] In the method of forming a film on a porous substrate of the present invention, a film is formed by a sputtering method or the like onto a porous base in which only a large number of pores are filled with photoresist, so that the pores are closed. It is possible to form a film on a porous substrate as if it were formed on a substrate without holes.
このため、孔によって影響ざれることなく膜が成膜され
、細孔を生じにくい。Therefore, the film is formed without being affected by the pores, and pores are less likely to occur.
［実施例］
以下、本発明を具体化した実施例を図面を参照しつつ説
明する。[Example] Hereinafter, an example embodying the present invention will be described with reference to the drawings.
（実施例１〉
本実施例は、第１図に示すように、多孔質基板Ｐとして
気孔率１０％の孔口をもつアルミナ多孔貿基板（４０Ｘ
４．Ｏｘｌ （ｍｍ＞ ）を採用し、ボジ型フォトレジ
スト１として市販のノボラック樹脂＋Ｏ−キノンジアジ
ドを採用し、膜２としてのジルコニア膜をスパッタリン
グ法により戒膜したものである。(Example 1) As shown in FIG. 1, this example uses an alumina porous substrate (40X
4. Oxl (mm>), a commercially available novolac resin + O-quinone diazide was used as the positive photoresist 1, and a zirconia film was formed as the film 2 by sputtering.
第１工程として、純水洗浄及びアセトン洗浄した多孔質
基板Ｐ上にフォトレジスト１を施した。As a first step, a photoresist 1 was applied on a porous substrate P that had been washed with pure water and acetone.
フォトレジスト１の施行は、スピンナーを使用して、多
孔質基板Ｐを裏面から真空引きしつつ、表面にフォトレ
ジスト１を吹付けることにより行なった。これにより、
第２図に示すように、多孔質基板Ｐは、表面に１μ汎の
厚さｔでフォトレジスト１が形成され、かつ孔口内にフ
ォトレジスト１が充填された。Photoresist 1 was applied by spraying Photoresist 1 onto the front surface of the porous substrate P while evacuating the porous substrate P from the back surface using a spinner. This results in
As shown in FIG. 2, a photoresist 1 was formed on the surface of the porous substrate P to a thickness t of 1 μm, and the photoresist 1 was filled in the holes.
第２工程として、第１工程終了後の多孔貿基仮Ｐをマス
クアライナにセットし、第３図に示すように、孔目に対
して斜め方向（図中矢印）から波長４ ３ ６ ｎｍの
光を多孔質基板Ｐに照射して孔口以外のフォトレジスト
１を感光させた。これにより孔口以外の表面のフォトレ
ジスト１は希アルカリ水溶液に可溶な可溶部１１とされ
た。この可溶部１１は、孔口に対して斜めに形成されて
いる。As the second step, the porous trade base temporary P after the first step is set in a mask aligner, and as shown in FIG. The porous substrate P was irradiated with light to expose the photoresist 1 other than the holes. As a result, the photoresist 1 on the surface other than the hole opening was made into a soluble portion 11 that is soluble in the dilute aqueous alkaline solution. This fusible portion 11 is formed obliquely with respect to the hole opening.
第３工程として、第２工程終了後、第４図に示すように
、可溶部１１のみを除去した。可溶部１１の除去は、希
アルカリ水溶液としての水酸化ナトリウム又は水酸化カ
リウム水溶液で現像することにより行なった。なお、孔
口内にはフォトレジスト１が残留している。As a third step, after the second step, only the soluble portion 11 was removed, as shown in FIG. The soluble portion 11 was removed by developing with a sodium hydroxide or potassium hydroxide aqueous solution as a dilute alkali aqueous solution. Note that the photoresist 1 remains inside the hole.
第４工程として、第３工程終了後、孔口内のみにフォト
レジスト１をもつ多孔質基板Ｐを純水洗浄し、乾燥後、
第５図に示すように、表面にジルコニア膜２を施した。As the fourth step, after the third step, the porous substrate P having the photoresist 1 only inside the hole is cleaned with pure water, and after drying,
As shown in FIG. 5, a zirconia film 2 was applied to the surface.
成膜は、第７図に概略を示すスパッタリング装置により
行なった。このスパッタリング装置は、０２又はＡ「ガ
スを導入し空気（Ａｉｒ＞を排気するチャンバ３内に、
基板ホルダ４、ターゲットホルダ５及び膜厚モニタ６を
具降したものである。基板ホルダ４はＲＦ電源及びアー
スと接続され、ターゲットホルダ５はＤＣ電源又はＲＦ
電源と接続されている。まず、多孔質基仮Ｐ＠基板ボル
ダ４に装備し、図示しない真空ポンプにより１Ｘ１（Ｉ
５ＴｏｒｒまでＡｉ「を初期排気した後、Ａ「ガスを
３Ｘ１ ０− ３Ｔｏ「「導入し、ＲＦ電源ＮＯ． １
を用い２００Ｗで１０分間、多孔質基板Ｐの表面をエッ
チングした。タ一ゲットホルダ５にはジルコニアターゲ
ット７が装備されており、八「ガスはそのままとし、０
２ガスを１ｘ１０−ＩＴｏｒｒ導入し、ＲＦ電源Ｎｏ，
２を用いて５００Ｗ、基板温度８０’Ｃで、多孔質基板
Ｐに膜厚Ｔ＝１．０μｍのジルコニア膜２を成膜したく
第５図参照）。The film was formed using a sputtering apparatus schematically shown in FIG. This sputtering apparatus has a chamber 3 that introduces 02 or A gas and exhausts air.
The substrate holder 4, target holder 5, and film thickness monitor 6 are removed. The substrate holder 4 is connected to an RF power source and ground, and the target holder 5 is connected to a DC power source or RF
Connected to power supply. First, a porous base temporary P@substrate boulder 4 is equipped, and a 1X1 (I
After initially exhausting Ai' to 5 Torr, A' gas was introduced to 3X10-3To' and RF power supply NO.
The surface of the porous substrate P was etched at 200 W for 10 minutes using the etching method. The target holder 5 is equipped with a zirconia target 7, and the target holder 5 is equipped with a zirconia target 7.
2 gases were introduced at 1x10-ITorr, and the RF power supply No.
(See FIG. 5) to form a zirconia film 2 with a film thickness T=1.0 μm on a porous substrate P at 500 W and a substrate temperature of 80° C.
第５工程として、第４工程終了後、第６図に示すように
、スパッタリング装置から取出した多孔質塁板Ｐをジク
ロルベンゼンからなる市販のレジスｉ−溶解液に浸し、
多孔質基板Ｐの孔口内のフォトレジスト１を除去した。As the fifth step, after the completion of the fourth step, as shown in FIG. 6, the porous base plate P taken out from the sputtering device is immersed in a commercially available Regis-i solution made of dichlorobenzene.
The photoresist 1 inside the holes of the porous substrate P was removed.
こうして、膜厚Ｔ＝１．０μｍジルコニア膜２をもつ多
孔質基板Ｐを得た。In this way, a porous substrate P having a zirconia film 2 having a film thickness T=1.0 μm was obtained.
同様に第１〜第５工程を遂行し、膜厚Ｔ＝０．５、、１
．５、２．０μｍのジルコニア膜２をもつ３ｇの多孔質
基板Ｐを得た。Similarly, the first to fifth steps were performed, and the film thickness T=0.5, 1
．． 5. A porous substrate P weighing 3 g and having a zirconia film 2 of 2.0 μm was obtained.
（比較例１）
フォトレジストを用いない以外は実施例１と同じ条件で
、膜厚０．５、１．０、１．５、２． ０μ汎のジルコ
ニア膜をもつ計４個の多孔質基板を得た。(Comparative Example 1) Film thicknesses of 0.5, 1.0, 1.5, 2. A total of four porous substrates having zirconia films of 0 μm diameter were obtained.
（実施例２〉
本実施例では、ポジ型フォトレジストとして市販のノボ
ラック樹脂＋○−キノンジアジドを採用し、膜としてＴ
ｉＯ２膜を採用したものである。(Example 2) In this example, a commercially available novolac resin + ○-quinone diazide was used as a positive photoresist, and T was used as a film.
It uses an iO2 film.
多孔質基板は実施例１と同じものを採用し、成膜はスパ
ッタリング法により成膜した。 実施例１と同様に、第
１工程を遂行した。すなわち、多孔質基板の表面に１μ
汎の厚さでフォトレジストを形成し、かつ孔内にフォト
レジストを充填した。The porous substrate used was the same as in Example 1, and the film was formed by sputtering. The first step was carried out in the same manner as in Example 1. In other words, 1μ on the surface of the porous substrate.
A photoresist was formed to a uniform thickness, and the holes were filled with the photoresist.
第２工程として、第１工程終了後の多孔質基板をマスク
アライナにセットし、多孔質基板の孔に対して斜め方向
から４３６ｎｍの光を照射し、孔以外のフォトレジスト
を感光させた。これにより孔以外のフォトレジストは希
アルカリ水溶液に可溶な可溶部とされた。この可溶部も
孔に対して斜めに形成ざれている。As a second step, the porous substrate after the first step was set in a mask aligner, and the holes of the porous substrate were irradiated with 436 nm light from an oblique direction to expose the photoresist other than the holes. As a result, the photoresist other than the holes was made into a soluble portion that was soluble in the dilute alkaline aqueous solution. This fusible portion is also formed obliquely to the hole.
第３工程として、第２工程終了後、可溶部のみを希アル
カリ水溶液としての水酸化ナトリウム又は水酸化カリウ
ム水溶液を用いた現像により除去した。孔内にはフォト
レジストが残留している。As a third step, after completing the second step, only the soluble portion was removed by development using a sodium hydroxide or potassium hydroxide aqueous solution as a dilute alkali aqueous solution. Photoresist remains inside the hole.
第４工程として、第３工程終了後、孔内のみにフォトレ
ジストをもつ多孔質基板を純水洗浄し、乾燥後、実施例
］と同じスパッタリング装置により表面に成膜を施した
。まず、実施例１と同様に、多孔質基板の表面をエッチ
ングした。次に、Ａｒガスはそのままとし、０２ガスを
１Ｘ１０＝Ｔｏｒｒ導入し、ＤＣ電源３Ａ、基板温度ｓ
ｏ’ｃ、Ｔｉターゲットスパッタリングで、多孔質基板
に膜厚１．０μｍのＴｉＯ２膜を成膜した。As a fourth step, after completing the third step, the porous substrate having photoresist only in the pores was washed with pure water, dried, and then a film was formed on the surface using the same sputtering apparatus as in Example]. First, in the same manner as in Example 1, the surface of the porous substrate was etched. Next, leave the Ar gas as it is, introduce 02 gas at 1X10=Torr, use a DC power source of 3A, and a substrate temperature of s.
o'c, a TiO2 film with a thickness of 1.0 μm was formed on the porous substrate by Ti target sputtering.
第５工程として、第４工程終了後、スパッタリング装置
から取出した多孔質基板をジクロルベンじンからなる市
販のレジスト溶解液に浸し、多孔質基仮の孔内のフォト
レジストを除去した。As a fifth step, after the completion of the fourth step, the porous substrate taken out from the sputtering apparatus was immersed in a commercially available resist solution containing dichlorobenzene to remove the photoresist in the temporary pores of the porous base.
こうして、膜厚１．０μｍのＴｉＯ２膜をもつ多孔質基
板を得た。In this way, a porous substrate having a TiO2 film with a thickness of 1.0 μm was obtained.
同様に第１〜第５工程を遂行し、膜厚０．５、］．５、
２．ＱμｍのＴｉＯ２膜をもつ３個の多孔質基板を得た
。The first to fifth steps were performed in the same manner, and the film thickness was 0.5, ]. 5,
2. Three porous substrates with Qμm TiO2 films were obtained.
（比較例２〉
フォトレジストを用いない以外は実施例２と同じ条件で
、膜厚０．５、１．０、１．５、２． ０μ扉のＴｉＯ
２膜をもつ計４個の多孔質基板を得た。(Comparative Example 2) TiO with film thicknesses of 0.5, 1.0, 1.5, and 2.0 μm was prepared under the same conditions as Example 2 except that no photoresist was used.
A total of four porous substrates with two membranes were obtained.
（評価）
実施例１、２及び比較例１、２の方法により成膜したジ
ルコニア膜又はＴｉＯ２膜をＳＥＭ （ＳＣａｎｎｉｎ
Ｑ Ｅｌｅｃｔｒｏｎ ＭＩＣｒＯｓｃｏｐｅ）観
察した。実施例１の方法により成膜したジルコニア膜及
び実施例２の方法により成膜したＴｉＯ２膜は、１．０
μ卯以上の膜厚で細孔が観察ざれなかった。一方、比較
例１の方法により成膜したジルコニア膜及び比較例２の
方法により成膜したＴｉＯ２膜は、膜厚１．５μ汎まで
細孔が観察ざれた。(Evaluation) SEM (SCannin
Q Electron MICrOscope). The zirconia film formed by the method of Example 1 and the TiO2 film formed by the method of Example 2 were 1.0
Pores were not observed in film thicknesses of μm or more. On the other hand, in the zirconia film formed by the method of Comparative Example 1 and the TiO2 film formed by the method of Comparative Example 2, pores were observed up to a film thickness of 1.5 μm.
［発明の効果コ
以上詳述したように、本発明の多孔質基板への成膜方法
では、多数の孔内にフォトレジストが充填ざれた多孔質
基板へ成膜を行なうため、成膜を施すに際して細孔を生
じにくい。このため、本発明の多孔質基板への成膜方法
では、多孔質基板へ均質な膜を信頼性よくかつ迅速に戒
膜できる。[Effects of the Invention] As detailed above, in the method for forming a film on a porous substrate of the present invention, the film is formed on a porous substrate in which many pores are filled with photoresist. It is difficult to form pores during treatment. Therefore, in the method of forming a film on a porous substrate of the present invention, a homogeneous film can be formed on a porous substrate reliably and quickly.
第１〜６図は実施例１の方法を示し、第１図は多孔質基
板の断面図、第２図は多孔質基板及びフォトレジストの
断面図、第３図は多孔質基板、フォトレジスト及び可溶
部の断面図、第４図は多孔貿基板及びフォトレジストの
断面図、第５図は多孔質基板、フオ］・レジスト及びジ
ルコニア膜の断面図、第６図は多孔質基板及びジルコニ
ア膜の断面図である。第７図は実施例１、２で用いたス
パッタリング装置の概略断面図である。第８図は従来の
方法により成膜された多孔貿基板及び膜の断面図である
。
Ｐ・・・アルミナ多孔質基板1 to 6 show the method of Example 1, FIG. 1 is a sectional view of a porous substrate, FIG. 2 is a sectional view of a porous substrate and a photoresist, and FIG. 3 is a sectional view of a porous substrate, a photoresist, and Figure 4 is a cross-sectional view of the soluble part, Figure 4 is a cross-sectional view of the porous substrate and photoresist, Figure 5 is a cross-sectional view of the porous substrate, resist, and zirconia film, and Figure 6 is the porous substrate and zirconia film. FIG. FIG. 7 is a schematic cross-sectional view of the sputtering apparatus used in Examples 1 and 2. FIG. 8 is a cross-sectional view of a porous substrate and a film formed by a conventional method. P...Alumina porous substrate
Claims (1)
トを充填する第１工程と、 該孔以外の該フォトレジストを露光して感光させ可溶部
を形成する第２工程と、 該可溶部を除去する第３工程と、 該孔内に該フォトレジストをもつ該多孔質基板の該表面
に成膜を施す第４工程と、 該孔内の該フォトレジストを除去する第５工程とを順次
遂行することを特徴とする多孔質基板への成膜方法。(1) A first step of filling the pores with a positive photoresist from the surface of the porous substrate, and a second step of exposing the photoresist other than the pores to light to form a soluble portion, as applicable. a third step of removing the melted portion; a fourth step of forming a film on the surface of the porous substrate having the photoresist in the pores; and a fifth step of removing the photoresist in the pores. A method for forming a film on a porous substrate, characterized by sequentially performing the following steps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24160389A JPH03104856A (en) | 1989-09-18 | 1989-09-18 | Formation of film on porous substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24160389A JPH03104856A (en) | 1989-09-18 | 1989-09-18 | Formation of film on porous substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03104856A true JPH03104856A (en) | 1991-05-01 |
Family
ID=17076776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24160389A Pending JPH03104856A (en) | 1989-09-18 | 1989-09-18 | Formation of film on porous substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03104856A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002047575A (en) * | 2000-05-22 | 2002-02-15 | C Uyemura & Co Ltd | Automatic analyser and controller of electroless composite plating liquid |
| US7507587B2 (en) | 2000-05-22 | 2009-03-24 | C.Uyemura Co., Ltd. | Automatic analysis and control system for electroless composite plating solution |
-
1989
- 1989-09-18 JP JP24160389A patent/JPH03104856A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002047575A (en) * | 2000-05-22 | 2002-02-15 | C Uyemura & Co Ltd | Automatic analyser and controller of electroless composite plating liquid |
| US7507587B2 (en) | 2000-05-22 | 2009-03-24 | C.Uyemura Co., Ltd. | Automatic analysis and control system for electroless composite plating solution |
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