JPH03104177A - Squid element - Google Patents

Squid element

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Publication number
JPH03104177A
JPH03104177A JP1241476A JP24147689A JPH03104177A JP H03104177 A JPH03104177 A JP H03104177A JP 1241476 A JP1241476 A JP 1241476A JP 24147689 A JP24147689 A JP 24147689A JP H03104177 A JPH03104177 A JP H03104177A
Authority
JP
Japan
Prior art keywords
thin film
superconducting
proximity effect
grain boundary
thin films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1241476A
Other languages
Japanese (ja)
Inventor
Atsushi Ieuji
淳 家氏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP1241476A priority Critical patent/JPH03104177A/en
Publication of JPH03104177A publication Critical patent/JPH03104177A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To improve characteristics by bringing a thin film having proximity effect with a superconducting thin film closely into contact with the surface of the superconducting thin film except a Josephson junction. CONSTITUTION:On the surfaces of thin films (electrode part 2a, 2b) of high temperature superconductor except Josephson junction parts (3a, 3b) of a SQUID ring made of a polycrystalline thin film, thin films (e.g. Au thin films 4a, 4b) composed of material exhibiting proximity effect with the above superconducting thin film are formed in a close contact sate. When normal conductor like Au, Cu, etc., is made to approach superconductor, the normal conductor exhibits superconductivity by proximity effect. Hence, in the case where a grain boundary I exists in the electrode part of the SQUID ring, a superconducting path is formed in the thin films 4a, 4b adjacent to the grain boundary I, so that a shielding current flows also in this part, and the permeating of magnetic flux into the grain boundary is blocked.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は超微弱磁場の計測に供されるSQUID素子に
関し、更に詳しくは、高温超電導薄膜を用いたSQUI
D素子に関する。
[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a SQUID device used for measuring ultra-weak magnetic fields, and more specifically to a SQUID device using a high-temperature superconducting thin film.
Regarding D element.

〈従来の技術〉 RF−SQUIDないしはDC−SQUID素子は、超
電導リング内に1個ないしは2個のジョセフソン接合を
設けた構造であり、このジョセフソン接合部での磁束の
出入りを観測する。
<Prior Art> An RF-SQUID or DC-SQUID element has a structure in which one or two Josephson junctions are provided within a superconducting ring, and the inflow and outflow of magnetic flux at this Josephson junction is observed.

第4図は従来のDC−SQUI D素子の構或を模式的
に示す図で、超電導材料で形成されたループ内に2個の
ジョセフソン接合43a,43bを設け、そのジョセフ
ソン接合43a,43b以外の部分を電極部42a,4
2bとして電流端子と電圧端子を接続する。
FIG. 4 is a diagram schematically showing the structure of a conventional DC-SQUID element, in which two Josephson junctions 43a, 43b are provided in a loop formed of superconducting material. The other parts are electrode parts 42a, 4
Connect the current terminal and voltage terminal as 2b.

ところで、YBCOに代表される高温超電導薄膜を用い
たSQUID素子に関しては、既に多くの報告がなされ
ているが、そのジョセフソン接合はいずれも実質的に粒
界接合であり、粒界部分での臨界電流密度が小さいこと
を利用して、弱結合部たるジョセフソン接合を得ている
By the way, many reports have already been made regarding SQUID devices using high-temperature superconducting thin films such as YBCO, but all of the Josephson junctions are essentially grain boundary junctions, and criticality occurs at the grain boundaries. By taking advantage of the low current density, a Josephson junction, which is a weak coupling, is obtained.

このことから、従来すでに発表されている高温超電導薄
膜製のSQUID素子では、高温超電導体の多結晶薄膜
をパターニングすることによって、電極部とジョセフソ
ン接合部を得ている。
For this reason, in SQUID devices made of high-temperature superconducting thin films that have already been announced, electrode portions and Josephson junctions are obtained by patterning a polycrystalline thin film of high-temperature superconducting material.

〈発明が解決しようとする課題〉 ところで、高温超電導薄膜では、一般に、第5図(a)
および(b)に斜視図および側面図で示すように、粒界
Iが存在するとその部分から薄膜内に磁束が侵入する。
<Problem to be solved by the invention> By the way, in high-temperature superconducting thin films, in general, the problem shown in FIG.
As shown in the perspective view and side view in (b), when a grain boundary I exists, magnetic flux penetrates into the thin film from that portion.

従って、上記のような従来の高温超電導薄膜を用いたS
QUID素子によれば、電極部42a,42bにも磁束
が侵入することになり、このことは、電極部42a,4
2b内にも弱結合部が存在するのと等しくなり、磁場一
出力電圧特性が安定しない等、素子特性を劣化させる原
因となっている。
Therefore, S using the conventional high temperature superconducting thin film as described above
According to the QUID element, magnetic flux also enters the electrode portions 42a, 42b, which means that the electrode portions 42a, 42b also enter the magnetic flux.
This is equivalent to the existence of a weak coupling portion within 2b, which causes deterioration of device characteristics such as unstable magnetic field-output voltage characteristics.

〈課題を解決するための手段〉 本発明は高温超電導薄膜を用いたSQUID素子の特性
を向上させることを目的としてなされたもので、その構
或を実施例に対応する第1図を参照しつつ説明すると、
本発明では、高温超電導体の多結晶薄膜製のSQUID
リングの、ジョセフソン接合部(3a,3b)を除く薄
膜(電極部2a,2b)の表面に、この超電導薄膜との
間で近接効果を発揮する材料からなる薄膜(例えばAu
薄膜4a,4b)を密着形成している。
<Means for Solving the Problems> The present invention has been made for the purpose of improving the characteristics of a SQUID element using a high-temperature superconducting thin film, and its structure will be described with reference to FIG. 1 corresponding to an embodiment. To explain,
In the present invention, SQUID made of polycrystalline thin film of high temperature superconductor
A thin film made of a material that exhibits a proximity effect with the superconducting thin film (for example, Au
The thin films 4a and 4b) are formed in close contact with each other.

〈作用〉 超電導体にAu,Cu等の常電導体を近接させるとその
常電導体が超電導を示すという近接効果により、SQU
IDリングの電極部に粒界Iが存在しても、これに隣接
する薄膜4a,4b内に超電導バスが形成されから、こ
の部分に遮蔽電流が流れ、粒界Iへの磁束の侵入が阻止
される。
<Effect> When a normal conductor such as Au or Cu is brought close to a superconductor, the normal conductor exhibits superconductivity due to the proximity effect, which causes SQU to
Even if a grain boundary I exists in the electrode part of the ID ring, a superconducting bus is formed in the adjacent thin films 4a and 4b, and a shielding current flows through this part, preventing magnetic flux from entering the grain boundary I. be done.

く実施例〉 第1図は本発明実施例の構造説明図で、(a)は正面図
、(ロ)はそのB−B断面図を示している。
Embodiment> FIG. 1 is a structural explanatory diagram of an embodiment of the present invention, in which (a) shows a front view and (b) shows a BB sectional view thereof.

MgO等の基板1の上面に、YBCO多結晶薄膜をパタ
ーニングして2つの電極部2aと2bを2つのジゴセフ
ソン接合部3aと3bで接続したDC−SQUIDリン
グが形成されている。
A DC-SQUID ring is formed on the upper surface of a substrate 1 made of MgO or the like by patterning a YBCO polycrystalline thin film and connecting two electrode parts 2a and 2b with two digocefson junction parts 3a and 3b.

このDC−SQUIDリングのジョセフソン接合部3a
および3bを除く部分、つまり電極部2aおよび2bの
上面は、それぞれAu薄膜4aおよび4bによって覆わ
れている。
Josephson junction 3a of this DC-SQUID ring
The upper surfaces of electrode portions 2a and 2b, excluding electrode portions 2a and 3b, are covered with Au thin films 4a and 4b, respectively.

以上の本発明実施例によると、第2図にその電極部2a
の部分の拡大断面図を示すように、電極部2a (2b
)に隣接するAug膜4a,4bが近接効果によって超
電導化し、電極部2a,2bに粒界■があっても、Au
!膜4a,4b内に超電導パスが形成されてこの部分に
遮蔽電流が流れるため、粒界■に磁束が侵入することが
ない。
According to the above embodiment of the present invention, the electrode portion 2a is shown in FIG.
As shown in the enlarged cross-sectional view of the portion of the electrode section 2a (2b
) adjacent to the Au films 4a and 4b become superconducting due to the proximity effect, and even if there are grain boundaries
! Since a superconducting path is formed in the films 4a and 4b and a shielding current flows through this portion, magnetic flux does not enter the grain boundary (2).

なお、以上のような本発明実施例は、例えば以下に示す
手順によって製造することができる。
Note that the embodiments of the present invention as described above can be manufactured, for example, by the procedure shown below.

先ず、RFマグネトロンスパッタ等によって基板1上に
一様にYBCO薄膜を製膜した後、これをアニールする
ことによって、そのYBCO薄膜を結晶化してこれに粒
界を作戒する。次に、そのYBCO薄膜上にフォトレジ
ストを塗布し、フォトリソ工程によって第1図に示すパ
ターンを残してレジストを除去する。そして、現像によ
って残されたレジスト膜をマスクとして、Arイオンエ
ッチング等のドライエッチングによって第1図に示した
パターンのSQUIDリングを得る。以上は公知である
First, a YBCO thin film is uniformly formed on a substrate 1 by RF magnetron sputtering or the like, and then this is annealed to crystallize the YBCO thin film and form grain boundaries therein. Next, a photoresist is applied on the YBCO thin film, and the resist is removed by a photolithography process, leaving the pattern shown in FIG. 1. Then, using the resist film left by the development as a mask, a SQUID ring having the pattern shown in FIG. 1 is obtained by dry etching such as Ar ion etching. The above is publicly known.

次に、そのSQUIDリングのジョセフソン接合部3a
と3bの上方にマスクを形成し、その上方からAuを蒸
着もしくはイオンコーティング等を施す。最後にマスク
を除去することによって第1図に示した構造の素子が得
られる。
Next, the Josephson junction 3a of the SQUID ring
A mask is formed above 3b and 3b, and Au is deposited or ion coated from above. Finally, by removing the mask, an element having the structure shown in FIG. 1 is obtained.

本発明は、以上の実施例のようにジョセフソン接合部3
a,3bの上方にAu薄膜等を形成しない構造に限定さ
れず、例えば第3図にその要部断面図を示すように、ジ
ョセフソン接合部3aないしは3bの上方に、絶縁体の
マスク5を形成し、その上方から素子全体にわたって一
様にAu!膜4を形成してもよい。ただし、このマスク
5の厚さは、素子を形或する超電導体のコヒーレント長
以上とする。
The present invention provides the Josephson joint 3 as in the above embodiment.
The structure is not limited to a structure in which an Au thin film or the like is not formed above the Josephson junction 3a or 3b, and for example, as shown in a cross-sectional view of the main part in FIG. Formed, and uniformly spread Au! over the entire element from above! A film 4 may also be formed. However, the thickness of this mask 5 is set to be greater than or equal to the coherence length of the superconductor forming the element.

この第3図の構造では、Au薄膜4がマスク5の存在に
よってジゴセフソン接合部3a,3bの上方において超
電導体から引き離されている結果、その部分では近接効
果が生じず、ジゴセフソン接合部3a,3bへの磁束の
侵入を阻止することがない。なお、マスク5の材料とし
ては、MgOや樹脂系の絶縁体を使用することができる
In the structure shown in FIG. 3, the Au thin film 4 is separated from the superconductor above the digocefson junctions 3a, 3b by the presence of the mask 5, so that no proximity effect occurs in that part, and the digocefson junctions 3a, 3b It does not prevent magnetic flux from entering. Note that as the material of the mask 5, MgO or a resin-based insulator can be used.

ところで、近接効果を発揮する材料としては、Auのほ
かにCu等が知られており、本発明はこのような近接効
果を発揮する材料ならばその種類を問わない。
Incidentally, in addition to Au, Cu and the like are known as materials that exhibit the proximity effect, and the present invention is applicable to any type of material that exhibits such a proximity effect.

また、本発明は、DC−SQUIDに限定されることな
く、RF−SQUIDにも全く同様に適用されることは
勿論である。
Furthermore, it goes without saying that the present invention is not limited to DC-SQUIDs, but can also be applied to RF-SQUIDs in exactly the same way.

く発明の効果〉 以上説明したように、本発明によれば、SQUIDリン
グのジョセフソン接合部を除く高温超電導薄膜(電極部
)の表面に、Au等の近接効果を発揮する薄膜を密着形
成したので、その部分の超電導薄膜内に粒界が存在して
も外部からの磁束が侵入することがなく、見掛け上この
部分の粒界が消去されることになり、SQUID素子の
特性が向上する。
Effects of the Invention> As explained above, according to the present invention, a thin film such as Au that exhibits the proximity effect is closely formed on the surface of the high temperature superconducting thin film (electrode part) excluding the Josephson junction of the SQUID ring. Therefore, even if a grain boundary exists in the superconducting thin film in that part, magnetic flux from the outside does not enter, and the grain boundary in this part is apparently erased, improving the characteristics of the SQUID element.

また、本発明のAu薄膜等は、YBCo薄膜等のように
水分に弱い高温超電導薄膜に対する保護膜となり得ると
いう効果もある。
Furthermore, the Au thin film of the present invention has the effect that it can serve as a protective film for high temperature superconducting thin films that are susceptible to moisture, such as YBCo thin films.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明実施例の構造説明図、第2図はその電極
部3aの拡大断面図で示す本発明実施例の作用説明図、
第3図は本発明の他の実施例の要部断面図、第4図は従
来のDC−SQUID素子の模式的な構造説明図、第5
図は多結晶高温超電導薄膜における磁束侵入状況の説明
図である。 1・・・・基板 2a,2b・・・・電極部 3a,3b・・・・ジョセフソン接合部4a,4b,4
・−・Au3膜 5・・・・絶縁体マスク
FIG. 1 is an explanatory diagram of the structure of the embodiment of the present invention, and FIG. 2 is an explanatory diagram of the operation of the embodiment of the present invention shown in an enlarged sectional view of the electrode portion 3a.
FIG. 3 is a sectional view of main parts of another embodiment of the present invention, FIG. 4 is a schematic structural explanatory diagram of a conventional DC-SQUID element, and FIG.
The figure is an explanatory diagram of the state of magnetic flux penetration in a polycrystalline high-temperature superconducting thin film. 1... Substrates 2a, 2b... Electrode parts 3a, 3b... Josephson junction parts 4a, 4b, 4
・-・Au3 film 5・・・Insulator mask

Claims (1)

【特許請求の範囲】[Claims] 高温超電導体の多結晶薄膜で形成された超電導リング中
に、少なくとも1個のジョセフソン接合部を有してなる
素子において、ジョセフソン接合部を除く上記薄膜の表
面に、この超電導薄膜との間で近接効果を発揮する材料
からなる薄膜を密着形成したことを特徴とするSQUI
D素子。
In an element having at least one Josephson junction in a superconducting ring formed of a polycrystalline thin film of a high-temperature superconductor, a layer between the superconducting thin film and the superconducting thin film is provided on the surface of the thin film excluding the Josephson junction. A SQUI characterized by closely forming a thin film made of a material that exhibits a proximity effect.
D element.
JP1241476A 1989-09-18 1989-09-18 Squid element Pending JPH03104177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1241476A JPH03104177A (en) 1989-09-18 1989-09-18 Squid element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1241476A JPH03104177A (en) 1989-09-18 1989-09-18 Squid element

Publications (1)

Publication Number Publication Date
JPH03104177A true JPH03104177A (en) 1991-05-01

Family

ID=17074884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1241476A Pending JPH03104177A (en) 1989-09-18 1989-09-18 Squid element

Country Status (1)

Country Link
JP (1) JPH03104177A (en)

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