JPH03103850A - Reticle - Google Patents
ReticleInfo
- Publication number
- JPH03103850A JPH03103850A JP1240708A JP24070889A JPH03103850A JP H03103850 A JPH03103850 A JP H03103850A JP 1240708 A JP1240708 A JP 1240708A JP 24070889 A JP24070889 A JP 24070889A JP H03103850 A JPH03103850 A JP H03103850A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reticle
- pattern
- transparent substrate
- static electricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 13
- 230000003068 static effect Effects 0.000 abstract description 13
- 238000005406 washing Methods 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 2
- 230000007261 regionalization Effects 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 12
- 230000006378 damage Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体装置製作の露光時に使用するレチクルに関し、
レチクルのパターンが静電気により破壊されるのを防止
することを目的とし、
透明基板の上に形成したCr膜をポジレジストを用い露
光エッチングしてパターン形威したレチクルにおいて、
上記Cr膜は透明基板の外周に沿う少なくとも5+nm
の幅には存在しないように構戒〔産業上の利用分野〕
本発明は半導体装置製作の露光時に使用するレチクルに
関する。[Detailed Description of the Invention] [Summary] With regard to reticles used during exposure for manufacturing semiconductor devices, a Cr film formed on a transparent substrate is used to prevent the pattern of the reticle from being destroyed by static electricity. In a reticle with a pattern formed by exposure etching using a positive resist,
The Cr film has a thickness of at least 5+nm along the outer periphery of the transparent substrate.
TECHNICAL FIELD The present invention relates to a reticle used during exposure for manufacturing semiconductor devices.
近年、半導体デバイスの性能向上に伴ない、品質の優れ
たレチクルが要望されているが、レチクルを製作する際
の大きな問題の一つに静電気によるパターンの欠損の問
題がある。In recent years, as the performance of semiconductor devices has improved, there has been a demand for reticles of excellent quality, but one of the major problems when manufacturing reticles is the problem of pattern loss due to static electricity.
従来のポジレジストを用いてCr膜をエッチングしてパ
ターン或形されるレチクルは、第4図に示すようにして
作威される。この方法は先ず(a)図に示すようにガラ
ス等の透明基板1の上にCr膜2を形成し、その上に(
b)図の如くポジレジスト膜3を塗布し、このポジレジ
スト膜3をi光現像して(C)図の如くレジストパター
ン4を形成する。最後に(d)図の如くレジストパター
ン4をマスクにしてCr膜2をエッチングしてCr(1
)
(2〉
膜のパターン5を形成するのである。この際外周のCr
膜2は露光時の遮光用として残す。なお(e)図は(d
)図の平面図であり、Cr膜はハッチングを入れて示し
ている。また同図の6はスクライブライン、7はアライ
メント情報などを記録した記号部分である。A reticle in which a pattern is formed by etching a Cr film using a conventional positive resist is produced as shown in FIG. In this method, first, as shown in figure (a), a Cr film 2 is formed on a transparent substrate 1 such as glass, and then (
b) A positive resist film 3 is applied as shown in the figure, and this positive resist film 3 is developed with i-light to form a resist pattern 4 as shown in the figure (C). Finally, as shown in (d), the Cr film 2 is etched using the resist pattern 4 as a mask.
) (2> The film pattern 5 is formed. At this time, the outer peripheral Cr
The film 2 is left for light shielding during exposure. Note that (e) is (d)
) is a plan view of the figure, in which the Cr film is shown with hatching. Further, in the same figure, 6 is a scribe line, and 7 is a symbol portion in which alignment information and the like are recorded.
上記従来のレチクルでは、洗浄時や、外周を手で触れた
ような場合に、静電気によるパターン破壊が生ずるとい
う問題があった。The conventional reticle described above has a problem in that pattern destruction occurs due to static electricity during cleaning or when the outer periphery is touched by hand.
本発明は上記従来の問題点に鑑み、静電気によるパター
ン破壊を防止可能にしたレチクルを提供することを目的
とする。SUMMARY OF THE INVENTION In view of the above conventional problems, it is an object of the present invention to provide a reticle that can prevent pattern destruction due to static electricity.
上記目的を達或するために、本発明のレチクルでは、透
明基板1の上に形成したCr膜をポジレジストを用い露
光エッチングしてパターン形成したレチクルにおいて、
上記Cr膜2は透明基板1の外周に沿う少なくとも5m
n+の幅には存在しないように形成したことを特徴とす
る。In order to achieve the above object, the reticle of the present invention is a reticle in which a pattern is formed by exposing and etching a Cr film formed on a transparent substrate 1 using a positive resist.
The Cr film 2 extends at least 5 m along the outer periphery of the transparent substrate 1.
It is characterized in that it is formed so that it does not exist in the width of n+.
透明基板1の周囲に沿って少なくとも5+nmの幅でC
r膜を形成しないことにより洗浄時に洗浄ホルダ9が帯
電しても、レチクルのCr膜2が洗浄ホルダ9に接触し
ないため、レチクルのパターン5は洗浄ホルダの静電気
の影響を受けない。またレチクル取扱時には人がCr膜
のない外周を持つので静電気による電子の流れは生ぜず
パターン5の破壊はない。C in a width of at least 5+nm along the periphery of the transparent substrate 1
By not forming the r film, even if the cleaning holder 9 is charged during cleaning, the Cr film 2 of the reticle does not come into contact with the cleaning holder 9, so the pattern 5 of the reticle is not affected by the static electricity of the cleaning holder. Furthermore, when handling the reticle, a person holds the outer periphery without a Cr film, so no flow of electrons occurs due to static electricity, and the pattern 5 is not destroyed.
第1図は本発明の実施例を示す図であり、(a)は平面
図、(b)はa図のb−b線における断面図である。FIG. 1 is a diagram showing an embodiment of the present invention, in which (a) is a plan view and (b) is a sectional view taken along the line bb in FIG.
同図において、1はガラス等を用いた透明基板、5はチ
ップ露光用のCr膜パターン、6 (Cr膜のない部
分)はスクライブライン、7は該スクラ(3)
(4)
?ブラインの中に形成されたアライメント情報等の記号
を表示した記号部分、2は露光時に余分な光を遮ぎるた
めに残されたCr膜である。本実施例の要点はこの外周
のCr膜2を、透明基板1の外周に沿う少なくとも5m
m幅の領域には形成しないようにしたことである。なお
この5mm幅の領域にCr膜を形成しない方法としては
、透明基板全面に形成したCr膜からエッチングにより
チップ露光用のパターン5を形成するときに同時にエッ
チング除去するか、または、透明基板にCr膜をスパッ
タ又は蒸着するときに外周部にCr膜が形成されないよ
うに該部を覆う治具を用いれば良い。In the figure, 1 is a transparent substrate made of glass or the like, 5 is a Cr film pattern for chip exposure, 6 (the part without the Cr film) is a scribe line, and 7 is the scrubber (3) (4)? A symbol portion 2 showing symbols such as alignment information formed in the brine is a Cr film left to block excess light during exposure. The main point of this embodiment is that the outer Cr film 2 is coated for at least 5 m along the outer periphery of the transparent substrate 1.
The reason is that it is not formed in an m-wide area. Note that as a method for not forming a Cr film in this 5 mm wide area, it is possible to remove the Cr film by etching the Cr film formed on the entire surface of the transparent substrate at the same time as forming the chip exposure pattern 5, or to remove the Cr film on the transparent substrate. When sputtering or vapor depositing a film, a jig may be used to cover the outer peripheral part so that the Cr film is not formed on the peripheral part.
このように構或された本実施例の作用を次に説明する。The operation of this embodiment thus constructed will now be described.
第3図は従来のレチクル8を洗浄ホルダ9に入れて洗浄
する場合を示しており、この場合は洗浄ホル■ダ9は洗
浄により負にチャージするため、この静電気がレチクル
8の外周のCr膜2に伝わり、一負に帯電する。(b)
図のように人の手やアース10が内側のパターン5に触
れると放電が生じパタ一ン5に破壊が生じる。(C)図
のように電子eが外周のCr膜2から内側のパターン5
に飛び、その部分に破壊を生じる。また、(d)図のよ
うにレチクル8が環境により正に荷電している場合に外
周のCr膜2に人が触れるとやはり電子eが内側のパタ
ーン5に飛びパターン5の破壊を生じる。FIG. 3 shows a case in which a conventional reticle 8 is placed in a cleaning holder 9 for cleaning. In this case, since the cleaning holder 9 is negatively charged by cleaning, this static electricity is transferred to the Cr film on the outer periphery of the reticle 8. 2 and becomes negatively charged. (b)
As shown in the figure, when a person's hand or the ground 10 touches the inner pattern 5, an electric discharge occurs and the pattern 5 is destroyed. (C) As shown in the figure, electrons e are transferred from the outer Cr film 2 to the inner pattern 5.
and causes destruction in that area. Further, when the reticle 8 is positively charged due to the environment as shown in FIG. 3(d), when a person touches the Cr film 2 on the outer periphery, electrons e will fly to the inner pattern 5 and cause the pattern 5 to be destroyed.
これに対し本発明の実施例では第2図に示すように洗浄
ホルダ9に入れた場合、外周のCr膜2は、透明基板の
周囲の少な《とも5+++m幅でCr膜が存在しないた
め、外周のCr膜2は洗浄ホルダ9に接触しない。この
ため外周のCr膜2には静電気が伝わらないため、パタ
ーンにアースの様なものが近づいても、放電はせず、従
ってパターン5の破壊は生じない。On the other hand, in the embodiment of the present invention, when the transparent substrate is placed in the cleaning holder 9 as shown in FIG. The Cr film 2 does not contact the cleaning holder 9. For this reason, static electricity is not transmitted to the Cr film 2 on the outer periphery, so even if something like earth approaches the pattern, no discharge will occur, and therefore, the pattern 5 will not be destroyed.
また第3図(d)に示したように環境によりレチクル8
が正に帯電している場合“、本実施例では人がレチクル
の外周を持って取扱っても、外周部分にはCr膜が存在
しないため、放電は起らず、従ってパターンの破壊はな
い。Also, as shown in Figure 3(d), depending on the environment, the reticle 8
If the reticle is positively charged, in this embodiment, even if a person handles the reticle by the outer periphery, no discharge will occur because there is no Cr film on the outer periphery, and the pattern will not be destroyed.
(5)
(6)
〔発明の効果〕
以上説明した様に、本発明によれば、基板の外周に沿っ
てCr膜のない部分を設けることにより、静電気による
パターンの破壊を防止することができ、レチクルの歩留
り向上に寄与することができる。(5) (6) [Effects of the Invention] As explained above, according to the present invention, by providing a portion without a Cr film along the outer periphery of the substrate, pattern destruction due to static electricity can be prevented. , it can contribute to improving the yield of reticles.
第1図は本発明の実施例を示す図、
第2図は本発明の実施例の作用を説明するための図、
ffi3図は従来のレチクルにおけるパターンの静電破
壊を説明するための図、
第4図は従来のレチクルの製造方法を説明するための図
である。
図において、
1は透明基板、
2は外周のCr膜、
5はパターン、
6はスクライブライン、
7は記号部分、
8はレチクル、
9は洗浄ホルダ
を示す。FIG. 1 is a diagram showing an embodiment of the present invention, FIG. 2 is a diagram for explaining the operation of the embodiment of the present invention, and FIG. 3 is a diagram for explaining electrostatic damage of a pattern in a conventional reticle. FIG. 4 is a diagram for explaining a conventional reticle manufacturing method. In the figure, 1 is a transparent substrate, 2 is a Cr film on the outer periphery, 5 is a pattern, 6 is a scribe line, 7 is a symbol part, 8 is a reticle, and 9 is a cleaning holder.
Claims (1)
トを用い露光エッチングしてパターン形成したレチクル
において、 上記Cr膜(2)は透明基板(1)の外周に沿う少なく
とも5mmの幅には存在しないように形成したことを特
徴とするレチクル。[Claims] 1. In a reticle in which a pattern is formed by exposing and etching a Cr film formed on a transparent substrate (1) using a positive resist, the Cr film (2) is formed on the outer periphery of the transparent substrate (1). A reticle characterized in that it is formed so that it does not exist in a width of at least 5 mm along the reticle.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1240708A JPH03103850A (en) | 1989-09-19 | 1989-09-19 | Reticle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1240708A JPH03103850A (en) | 1989-09-19 | 1989-09-19 | Reticle |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03103850A true JPH03103850A (en) | 1991-04-30 |
Family
ID=17063529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1240708A Pending JPH03103850A (en) | 1989-09-19 | 1989-09-19 | Reticle |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03103850A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010057347A (en) * | 1999-12-22 | 2001-07-04 | 황인길 | Static electricity prevention structure of reticle in stepper |
KR100422907B1 (en) * | 2002-05-02 | 2004-03-12 | 아남반도체 주식회사 | Photo Mask having static electricity check module |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6118955A (en) * | 1984-07-05 | 1986-01-27 | Nec Corp | Reticle mask |
JPS63265246A (en) * | 1987-04-22 | 1988-11-01 | Nec Corp | Reticule |
JPH01112243A (en) * | 1987-10-26 | 1989-04-28 | Fujitsu Ltd | Production of photomask |
-
1989
- 1989-09-19 JP JP1240708A patent/JPH03103850A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6118955A (en) * | 1984-07-05 | 1986-01-27 | Nec Corp | Reticle mask |
JPS63265246A (en) * | 1987-04-22 | 1988-11-01 | Nec Corp | Reticule |
JPH01112243A (en) * | 1987-10-26 | 1989-04-28 | Fujitsu Ltd | Production of photomask |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010057347A (en) * | 1999-12-22 | 2001-07-04 | 황인길 | Static electricity prevention structure of reticle in stepper |
KR100422907B1 (en) * | 2002-05-02 | 2004-03-12 | 아남반도체 주식회사 | Photo Mask having static electricity check module |
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