JPH03101130A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To capture contaminative impurities in an insulating film, to eliminate bad influence of the contaminative impurities on a semiconductor device and to enhance reliability of the device by a method wherein Ti, P, As or B is added in the insulating film. CONSTITUTION:Ti, P, As or B is implanted into an interlayer insulating film or a protective film 10 of a semiconductor device. These substances capture contaminative impurities such as H<+>, H2O metal ions existing in the film 10. Thereby, it is possible to eliminate bad influence of the contaminative impurities on the semiconductor device, and reliability of the device can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to Gentering of contaminating impurities that enter a semiconductor device.

[Conventional technology]

The performance of a semiconductor device is greatly influenced by the influence of contaminant impurities that enter the device G. In addition, in recent years, semiconductor integrated circuit devices have become extremely highly integrated, and even a small amount of contaminating impurities can have an adverse effect, and as a countermeasure against this, the gentering technology, along with the cleaning technology, will become even more important in the future.

FIG. 2 is a cross-sectional view schematically showing the structure of a conventional semiconductor device manufacturing method (an example of a semiconductor device manufactured using this method is an NMOS transistor c, hereinafter referred to as NMO8T).

In Figure 2, (1) is a P-type silicon single crystal substrate;
(2) is a field oxide film for isolating between elements, (
3) and (4) are highly concentrated N-type impurity diffusion layers in the source and drain regions of NMO8T, respectively.
(5) is a gate oxide film, and (6) is a gate electrode. (1G is an interlayer insulating film, (8) is a first contact hole, (9) is an internal wiring layer made of aluminum, (1G is an sulfur retaining film,
aυ is a second contact hole, and @ is an aluminum electrode wiring layer.

In this conventional manufacturing method, first, a field oxide film (2) for isolation between elements is selectively formed on a P-type silicon single crystal substrate (1), and then a source region and a drain region (+3), (4) and a gate IT FM (61) via a gate oxide film (5) are selectively formed, and these are covered with an interlayer insulating film (7). ) i4) a first contact hole (8) is opened in a selected predetermined portion;
An internal wiring layer (9) made of aluminum is formed. Next, in order to protect the internal wiring layer (9) and draw out only the minimum necessary electrodes, a protective film (1) was formed, and then a second contact hole 0υ was opened by the protective film member. Form an aluminum electrode wiring layer.

[Problem to be solved by the invention]

However, in the case of the conventional semiconductor device manufacturing method described above, although the interlayer insulating film and the protective film serve to prevent contaminant impurities (C metal ions, H+, H, 0, etc.) from the external environment, If contaminant impurities are present in the zero interlayer insulating film and the protective film, which do not completely block the above effects, they will cause deterioration of the characteristics of the semiconductor device. In particular, reducing the gate oxide film of H''G deteriorates the gate oxide film, and since H20 is a polar molecule, it causes a leakage current, thereby significantly degrading the device characteristics.

This invention was made to solve these conventional problems, and its purpose is to provide a method for manufacturing a semiconductor device that can trap contaminant impurities in an insulating film. be.

[Means to solve the problem]

In order to achieve the above object, the present invention [this method of manufacturing a semiconductor device includes a step of incorporating titanium, phosphorus, arsenic, or boron into an insulating film in order to capture contaminant impurities in the insulating film] It is characterized by

[Effect]

That is, in this invention, since the insulating film of the semiconductor device contains titanium, phosphorus, arsenic, or boron, the contained substances react with the contaminant impurities in the film to capture the contaminant impurities. However, the adverse effects of these contaminant impurities on the semiconductor device can be removed.

〔Example〕

Hereinafter, an embodiment of the method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to FIG. 1, regarding a case where titanium (Ti) is contained in a protective film.

Figures 1(a) to 1(e) show NMs to which this embodiment is applied.
1A and 1B illustrate a method for manufacturing an OS transistor, each of which is a cross-sectional view schematically illustrating the main manufacturing steps sequentially.

That is, in FIG. 1, C1) is a P-type silicon single crystal substrate, (2) is a field oxide film for separating elements, and (3) and (4) are NMOS source and drain regions. (5) is a gate oxide film, (6) is a gate electrode, (7) is an interlayer insulating film, (8) is a first contact hole, and C9 is a high concentration N-type impurity diffusion layer. ) g; t internal wiring layer made of aluminum,
aO is the protective film, 0η is the second contact hole, (2)
is an aluminum electrode wiring layer. Furthermore, (2) is a resist film, and α fathom is injected titanium.

The manufacturing method begins with a P-type silicon single crystal substrate (
1) A field oxide film (2) for isolation between elements is selectively formed on top, and then a gate electrode (6) is formed through the source and drain regions 13), C4) and the gate oxide film (5). These are selectively formed and covered with an interlayer insulation film (7). Next, a first contact hole (8) is opened in a selected predetermined portion of each source and drain region (3), (4), and an internal wiring layer (9) made of aluminum is formed. (Figure 1(a)).

Subsequently, a protective film C1l is formed to protect the internal wiring layer (9) and draw out only the minimum necessary electrodes.

(Figure 1(b)) As a protective film member, an oxide film (S
1O3), nitride film (Si3N4), spin-on glass (SOG), etc. can be used, and since it is a film formed after aluminum, oxide film (Si02) and nitride film (Si, N4) can be used on aluminum. It is formed by plasma CVD, a low temperature process below the melting point.

Next, a second contact hole 0 is formed in a predetermined portion of the protective film 4.
η is opened and an aluminum electrode wiring layer @ is formed. (1st
Figure (C)).

After that, titanium is included in a protective film (10th grade).First, it covers the surface of the aluminum electrode wiring layer (this resist film 03).
is formed as shown in FIG. 1(d). This is to prevent a short circuit between the aluminum ε electrode wiring layer (2) and the titanium α fat in the protective film uQ. Subsequently, titanium is injected into the retention membrane ul using an ion implanter. (Figure 1(d)).

Finally, the resist film is removed. (Figure 1(e))
Although titanium is contained in the protection using the manufacturing method described above, titanium is an active metal, as is used in Genter Bump, a vacuum pump. Therefore, the titanium implanted into the protective film can capture contaminant impurities such as H+%H,0 or metal ions that exist in the protective film, thereby preventing the adverse effects of these contaminant impurities on the semiconductor device. It can be removed.

In the above embodiment, the contaminating impurities were captured by including titanium in the protective film, but the dirty line impurities in the interlayer insulating film can also be captured by the same method.

Further, although titanium was used in the above embodiment, similar effects can be obtained by using phosphorus (P), arsenic (As), or poron (B).

Further, in the above embodiment, a method for manufacturing an NMO8) transistor was shown, but any structure of a semiconductor device may be used as long as it has an insulating film.

〔Effect of the invention〕

As detailed above, according to the present invention, since titanium, phosphorus, arsenic, or poron is contained in the insulating film of a semiconductor device, these substances capture contaminant impurities in the film,
The adverse influence of contaminating impurities on a semiconductor device can be removed, and the reliability of the semiconductor device can be improved.

[Brief explanation of drawings]

FIGS. 1(a) to 1(e) show a method for manufacturing a semiconductor device to which an embodiment of the present invention is applied, each of which is a cross-sectional view schematically showing the main manufacturing steps sequentially. FIG. 2 is a cross-sectional view schematically showing the structure of a semiconductor device manufactured by a conventional manufacturing method. In the figure, (7) is an interlayer insulating film, the back is a protective film, and α is the contained titanium. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a method for manufacturing a semiconductor device having an insulating film,
1. A method for manufacturing a semiconductor device, comprising the step of incorporating titanium, phosphorus, arsenic, or boron into an insulating film.