JPH03100352U - - Google Patents
Info
- Publication number
- JPH03100352U JPH03100352U JP838490U JP838490U JPH03100352U JP H03100352 U JPH03100352 U JP H03100352U JP 838490 U JP838490 U JP 838490U JP 838490 U JP838490 U JP 838490U JP H03100352 U JPH03100352 U JP H03100352U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- extraction electrode
- generation chamber
- etching apparatus
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 claims description 8
- 238000000992 sputter etching Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP838490U JPH03100352U (OSRAM) | 1990-01-31 | 1990-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP838490U JPH03100352U (OSRAM) | 1990-01-31 | 1990-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03100352U true JPH03100352U (OSRAM) | 1991-10-21 |
Family
ID=31512017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP838490U Pending JPH03100352U (OSRAM) | 1990-01-31 | 1990-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03100352U (OSRAM) |
-
1990
- 1990-01-31 JP JP838490U patent/JPH03100352U/ja active Pending
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