JPH03100164A - Production of transparent gas barrier film - Google Patents
Production of transparent gas barrier filmInfo
- Publication number
- JPH03100164A JPH03100164A JP23773789A JP23773789A JPH03100164A JP H03100164 A JPH03100164 A JP H03100164A JP 23773789 A JP23773789 A JP 23773789A JP 23773789 A JP23773789 A JP 23773789A JP H03100164 A JPH03100164 A JP H03100164A
- Authority
- JP
- Japan
- Prior art keywords
- gas barrier
- film
- vapor deposition
- plastic film
- transparent plastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000002985 plastic film Substances 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 239000012298 atmosphere Substances 0.000 claims abstract description 7
- 229920003023 plastic Polymers 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 3
- 239000005022 packaging material Substances 0.000 abstract description 3
- 229920000728 polyester Polymers 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000463 material Substances 0.000 description 9
- 229920006255 plastic film Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、透明性、ガスバリア性、耐レトルト性にすぐ
れ、食品、医薬品、電子材料などの気密性を必要とする
包装材料として有用なガスバリアフィルムの製法に関す
る。Detailed Description of the Invention (Field of Industrial Application) The present invention provides a gas barrier material that has excellent transparency, gas barrier properties, and retort resistance and is useful as a packaging material that requires airtightness for foods, pharmaceuticals, electronic materials, etc. Concerning film manufacturing methods.
（従来の技術）
近年、透明ガスバリアフィルムが包装分野、ＩＴｏ分野
に盛んに使用されるようになってきた。(Prior Art) In recent years, transparent gas barrier films have been widely used in the packaging and ITO fields.
透明ガスバリアフィルムは、その耐熱性やガスバリア性
の要求のためにプラスチックフィルム上に、酸化ケイ素
層を形成したものがその用途に適している。A transparent gas barrier film having a silicon oxide layer formed on a plastic film is suitable for its use due to its heat resistance and gas barrier properties.
酸化ケイ素層を形成する方法としては真空を利用したド
ライプロセスが適している。ドライプロセスの代表とし
てはスパッタ法、蒸着法、等々あるがコスト面などの要
求により蒸着法が最も適している。A dry process using vacuum is suitable as a method for forming the silicon oxide layer. Typical dry processes include sputtering, vapor deposition, etc., but vapor deposition is most suitable due to cost considerations.
酸化ケイ素層を蒸着で形成する方法としては、二酸化ケ
イ素、一酸化ケイ素を蒸着材料として蒸着する方法、ケ
イ素を蒸着材料として酸素雰囲気中で蒸着する方法があ
る。Methods for forming a silicon oxide layer by vapor deposition include a method in which silicon dioxide or silicon monoxide is used as a vapor deposition material, and a method in which silicon is vapor deposited in an oxygen atmosphere as a vapor deposition material.
（発明が解決しようとする課題）
しかし、二酸化ケイ素を蒸着材料とする蒸着では、蒸着
源温度が高くなり、基板となるプラスチックフィルムに
熱ダメージを与える。さらに蒸着中のガス圧も上昇し、
良好な膜質の膜が形成できない。(Problems to be Solved by the Invention) However, in vapor deposition using silicon dioxide as a vapor deposition material, the temperature of the vapor deposition source becomes high, which causes thermal damage to the plastic film serving as the substrate. Furthermore, the gas pressure during deposition increases,
A film of good quality cannot be formed.
一酸化ケイ素を蒸着材料として蒸着した場合、蒸着中の
真空度が３ 、ＯＸ １０−’ｔｏｒｒ以下となり良好
な膜質となるが、膜が茶褐色となり透明とならない。When silicon monoxide is used as a vapor deposition material, the degree of vacuum during vapor deposition is less than 3, OX 10-'torr, resulting in a good film quality, but the film becomes brownish and not transparent.
ケイ素を蒸着材料として酸素雰囲気中で蒸着する方法で
は、透明な膜を得るためには５．０×１０−３ｔｏｒｒ
以上のガス圧が必要となり、良好な膜質の膜が得られな
い。In the method of evaporating silicon in an oxygen atmosphere using silicon as the evaporation material, a pressure of 5.0 x 10-3 torr is required to obtain a transparent film.
A higher gas pressure is required, and a film of good quality cannot be obtained.
（課題を解決するための手段）
本発明は、透明プラスチックフィルムの少なくとも片面
に、一酸化ケイ素を蒸着源として用い、減圧下の酸素雰
囲気で反応蒸着により５ｉＯｘ（Ｘは１．８〜２．０の
数）で表わされる実質的に二酸化ケイ素の薄膜を設ける
ことを特徴とする透明ガスバリアフィルムの製法である
。(Means for Solving the Problems) The present invention uses silicon monoxide as a vapor deposition source on at least one side of a transparent plastic film, and performs 5iOx (X is 1.8 to 2.0) by reactive vapor deposition in an oxygen atmosphere under reduced pressure. This is a method for producing a transparent gas barrier film characterized by providing a thin film substantially made of silicon dioxide represented by the number of .
本発明において、プラスチックフィルムとは有機重合体
を溶解又は溶融押出したもので、必要に応じて長手方向
、幅方向に延伸したものである。In the present invention, a plastic film is one obtained by melting or melt-extruding an organic polymer, and stretching it in the longitudinal direction and the width direction as necessary.
有機重合体の代表的なものとしては、ポリエステル、ポ
リエチレン、ナイロン６、ポリアミド、ポリイミドなど
がある。Typical organic polymers include polyester, polyethylene, nylon 6, polyamide, and polyimide.
また、これらの共重合体や、他の有機重合体を含有する
ものでもよい。Moreover, it may contain these copolymers or other organic polymers.
さらに、これらの有機重合体に公知の添加剤（例えば、
帯電防止剤、滑剤）が添加されてもよい。Furthermore, known additives (e.g.
Antistatic agents, lubricants) may be added.
このようなプラスチックフィルムは、本発明の膜形成に
先立ち公知の表面処理（例えば、コロナ処理、プラズマ
処理、アンカーコート処理）を行ってもよい。Such a plastic film may be subjected to a known surface treatment (eg, corona treatment, plasma treatment, anchor coating treatment) prior to film formation of the present invention.
本発明のプラスチックフィルムの厚さは特に制限を受け
ないが、包装材料としての適性では３〜５００μｍの範
囲が好ましい。The thickness of the plastic film of the present invention is not particularly limited, but a range of 3 to 500 μm is preferred for suitability as a packaging material.
かかるプラスチックフィルムの上に一酸化ケイ素を蒸着
源として、４ 、ＯＸ １０−’ｔｏｒｒより５ 、Ｏ
Ｘ １０−３ｔｏｒｒまでの範囲の圧力下の酸素雰囲気
中で反応蒸着を行い二酸化ケイ素を形成する。On such a plastic film, silicon monoxide was used as a vapor deposition source, and 5,O
Reactive deposition is performed in an oxygen atmosphere under pressures ranging up to X 10-3 torr to form silicon dioxide.
形成する二酸化ケイ素の膜厚は５０人〜３０００人の範
囲が好ましく、更に好ましくは２００人〜１０００人の
範囲である。The thickness of the silicon dioxide film to be formed is preferably in the range of 50 to 3,000 layers, more preferably in the range of 200 to 1,000 layers.
蒸着中の酸素ガス圧は低い方がガスバリア膜として好ま
しい質のものが形成できるが、あまり低くすぎると透明
にならない。The lower the oxygen gas pressure during vapor deposition, the better the quality of the gas barrier film can be formed, but if it is too low, it will not become transparent.
好ましい範囲としては、光の透過率が８０％以上得られ
る４ 、ＯＸ １０−’ｔｏｒｒ以上が好ましく、膜質
に影響がでない５ 、ＯＸ １０−３ｔｏｒｒ以下がよ
い。The preferable range is 4, OX 10-' torr or more, which provides a light transmittance of 80% or more, and 5, OX 10-3 torr or less, which does not affect the film quality.
５ 、ＯＸ １０−３ｔｏｒｒ以上になるとガスバリア
性及び、耐クラツク性が低下する。5, OX When the pressure exceeds 10-3 torr, gas barrier properties and crack resistance deteriorate.
本発明において蒸着材料として一酸化ケイ素を使用し４
．０Ｘ １０−’ｔｏｒｒ 〜５．ＯＸ １０−３ｔｏ
ｒｒの範囲の酸素圧力で反応性蒸着することにより、透
明性の高いすぐれたガスバリア性を示すフィルムを提供
する。In the present invention, silicon monoxide is used as a vapor deposition material.
．． 0X 10-'torr ~5. OX 10-3to
By reactive vapor deposition at an oxygen pressure in the range of rr, a film with high transparency and excellent gas barrier properties is provided.
（実施例）
基板のプラスチックフィルムとして厚さ１２μｍの２軸
延伸ポリエステルフイルム（東洋紡績■製Ｅ−５１００
）を使用した。(Example) A 12 μm thick biaxially stretched polyester film (E-5100 manufactured by Toyobo Co., Ltd.) was used as the plastic film for the substrate.
)It was used.
蒸着材料としては９８．９５％以上の一酸化ケイ素を用
い、表１に示す酸素圧下で反応性蒸着を行った。Silicon monoxide of 98.95% or more was used as the vapor deposition material, and reactive vapor deposition was performed under the oxygen pressure shown in Table 1.
比較のため、適正以外の酸素圧下でも蒸着を行った。For comparison, deposition was also performed under oxygen pressure other than the appropriate one.
また、二酸化ケイ素、ケイ素を蒸着材料として表１に示
す条件で蒸着を行った。Further, vapor deposition was performed using silicon dioxide and silicon as vapor deposition materials under the conditions shown in Table 1.
形成するガスバリア層は１０００人とした。The number of gas barrier layers to be formed was 1,000.
作成したガスバリアフィルムは、 Ｍｏｄｅｎ １ｃＯ
ｎｔｒ’０１社製ＯＸＴＲＡＭ １０１５Ｇで酸素透過
率を測定した。The created gas barrier film is Modern 1cO
The oxygen permeability was measured using OXTRAM 1015G manufactured by ntr'01.
さらに、１２６℃、３０分のレトルトテスト後に室温で
２４ｈ放置して同様に酸素透過率を測定した。以上の結
果を表２に示す。Further, after a 30-minute retort test at 126° C., the sample was left at room temperature for 24 hours and the oxygen permeability was measured in the same manner. The above results are shown in Table 2.
また、５６５ｎｍの光の透過率を分光器（日立型〜Ｕ−
３２１０）で測定した結果を表２に示す。In addition, the transmittance of 565 nm light was measured using a spectroscope (Hitachi model ~ U-
Table 2 shows the results measured with 3210).
表
２
（発明の効果）
本発明の方法によれば、耐レトルト性にすぐれ良好なガ
スバリア性を有する、透明性にすぐれたガスバリアフィ
ルムを提供しろる。Table 2 (Effects of the Invention) According to the method of the present invention, a gas barrier film with excellent retort resistance, good gas barrier properties, and excellent transparency can be provided.
Claims (1)
、一酸化ケイ素を蒸着源として用い、減圧下の酸素雰囲
気で反応蒸着によりＳｉＯ＿ｘ（ｘは１．８〜２．０）
で表される実質的に二酸化ケイ素の薄膜を設けることを
特徴とする透明ガスバリアフィルムの製法。(1) SiO_x (x is 1.8 to 2.0) is deposited on at least one side of a transparent plastic film by reactive deposition in an oxygen atmosphere under reduced pressure using silicon monoxide as a deposition source.
A method for producing a transparent gas barrier film characterized by providing a thin film substantially made of silicon dioxide represented by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23773789A JPH03100164A (en) | 1989-09-13 | 1989-09-13 | Production of transparent gas barrier film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23773789A JPH03100164A (en) | 1989-09-13 | 1989-09-13 | Production of transparent gas barrier film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03100164A true JPH03100164A (en) | 1991-04-25 |
Family
ID=17019728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23773789A Pending JPH03100164A (en) | 1989-09-13 | 1989-09-13 | Production of transparent gas barrier film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03100164A (en) |
-
1989
- 1989-09-13 JP JP23773789A patent/JPH03100164A/en active Pending
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