JPH0298201A - Microwave high output amplifier - Google Patents

Abstract

PURPOSE:To improve the input/output reflecting characteristic over a wide band by forming a four-distribution synthesis circuit with a two-stage impedance transformer using a 1/4 wavelength distribution line. CONSTITUTION:A 1st distribution constant line 14, a 2nd distribution constant line 15, a 3rd distribution constant line 17 and a 4th distribution constant line 18 have a line length of nearly 1/4 wavelength at the signal frequency. The 1st distribution line 14 and the 2nd distribution line 15 constituting the 1st and 2nd distributers 8, 9 constitute a two-stage impedance transformer. The 3rd distribution constant line 17 and the 4th distribution constant line 18 forming the 1st two-synthesizers 10 and 11 constitute similarly in the output circuit to the case with the input circuit the two-stage impedance transformer. That is, the four-distribution synthesizer is formed by connected two-stage of the two-distribution synthesis circuits in cascade and the 1st and 2nd stages of the two-distribution synthesis circuits form the two-stage impedance transformer using 1/4 wavelength distribution lines. Thus, the excellent input/output reflecting characteristic is obtained over a wide band.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave high output amplifier used in a power generator or the like.

[Conventional technology]

Figure 3 shows, for example, [''old gh-Power And Hi
gh-Effieieney Ion-Implan
ted Power GaAs FET5F
or Cand X Bands'', IEEE M
TT-S Digest 1985. pp8B2-3
35'', in which (1) is an input lead, (2) is an output lead, (3) is a package, (13) is a gold ribbon, (21) is a schematic diagram of a conventional microwave high power amplifier described in
) is the input dielectric substrate, (22) is the input high dielectric constant substrate, (
23) is the output dielectric substrate, (24) is the FET chip, (
25) is a two-way distributor configured in package (3), (2
6) is a two-distribution book configured on the input dielectric substrate (21), and (27) is a two-distribution book configured on the output dielectric substrate (23).
The synthesizer, (28) is configured in package (3) and r-2
It is a distributor.

Next, the operation will be explained. The input to the input lead (1) is divided into four by a two-way divider (25) configured on the package (3) and two two-way dividers (2B) configured on the input dielectric substrate (21), 4 FET chips (2
4). The outputs of the four FET chips (24) are two composites of two configured on the output dielectric substrate 23)! (27) and a two-synthesizer (28) configured in the package (3), and output to the output lead (2).

The 4-way distribution/synthesizing circuit not only simply divides the input power into 4 parts or combines the outputs of 4 FETs into 4 parts, but also constitutes an input/output matching circuit. Impedance matching on the input side is achieved by providing an inductance using gold wire and a metal film on a high dielectric constant substrate (22).However, in conventional microwave high power amplifiers, the input/output impedance matching circuit uses a single wavelength distributed constant line. The purpose of this invention is to obtain a microwave high-output amplifier with good input/output reflection characteristics over a wide band, since the two-stage impedance transformation is not used, and the problem of narrow band input/output reflection characteristics has been solved.

The distribution/synthesizing circuit is constructed with a two-stage impedance transformer using an ideal single-wavelength distribution line.

Since the distribution/synthesizing circuit is composed of a two-stage impedance transformer using an ideal single-wavelength distribution line, the input/output reflection characteristics are excellent over a wide band.

〔Example〕

Ru. In FIG. 1, (1) is an input lead, (2) is an output lead, (3) is a package, (4) is a first input dielectric substrate, (5) is a second input dielectric substrate, and (6) is a first input dielectric substrate. ) is the first
(7) is the second output dielectric substrate, (7) is the output dielectric substrate of
8) is the first two-way divider, (9) is the second two-way divider, (1
0) is the first 2-synthesizer, (11) is the second 2-synthesizer,
(12) is an FET, and (13) is a gold ribbon.

FIG. 2 is an equivalent circuit diagram of FIG. 1. In the figure, (14) is the first distributed constant line, (15) is the second distributed constant line, (
16) is FET, (17) is the third distributed constant 1s path, (
18) is the fourth distributed constant line, (19) is the input terminal, (
20) is an output terminal.

The first distributed constant $1111 (14) is the first two-way divider (
8), the second distributed constant line (15) is the line that constitutes the second two-way distribution IJa (9), and the third distributed constant line (17) is the line that constitutes the first two-way combiner (10). S that constitutes
The fourth distributed constant S path (18) is the second two-synthesizer (1
1).

The first distributed constant line (14), the second distributed constant line (I
s), the third distributed constant line (17), and the fourth distributed constant line (18) each have a line length of approximately one wavelength at the signal frequency. Each characteristic impedance is determined as follows in order to impedance-match the impedance Zin looking into the FET (16) to 50Ω at the input terminal (16) over a wide band using filter theory.

The second characteristic impedance of the first distributed constant line (14)
The characteristic impedance of the distributed constant line (15) and the third
distributed constant line (17), fourth distributed constant line (18)
), the characteristic impedance of F
In order to convert the output impedance Z out looking into ET (16) to 50Ω at the output terminal (20), the following equation is determined.

The fourth characteristic impedance of the third distributed constant line (17)
In a microwave high output amplifier configured in such a manner that the characteristic impedance of the distributed constant line (18) is higher than or equal to
divided into four by the second bipartite arrangement (9), resulting in four F
Evenly distributed to ET. The first two-way divider (8) and the second
The first distributed constant lil! that constitutes the two-way divider (9) of l
8(14) and the second distributed constant line m(15) constitute a two-stage impedance transformer, so the input reflection characteristics are good over a wide band.

The outputs of the four semiconductor elements (12) are the two first 2 combiners (lO) and the second 2 combiners! (11) and output to the output lead (2). In the output circuit, as in the case of the input circuit, the third distributed constant line, If (1
7) Fourth distribution constant! Since the 111Ii (1g) constitutes a two-stage impedance transformer, the output reflection characteristics are good over a wide band.

In the above embodiment, two substrates are used as the second input dielectric substrate, but two input dielectric substrates are used on one dielectric substrate.
The structure of the distributor is constructed by cascading two distribution/synthesizing circuits in two stages.
Since the second-stage two-distribution/synthesis circuit constitutes a two-stage impedance transformer using a one-wavelength distribution line, there is an effect that good input/output reflection characteristics can be obtained over a wide band.

2 is an equivalent circuit diagram of FIG. 1, and FIG. 3 is a schematic diagram of a conventional microwave high output amplifier.

In each figure, (1) is the input lead, (2) is the output lead, (
3) is a package, (4) is a first input dielectric substrate, (
5) is the second input dielectric substrate, (6) is the first output g-electric substrate, (7) is the second output dielectric substrate, and (8) is the first
(9) is the second two-divider, (10) is the first two-divider,
2 combiners, (11) is the second 2 combiner, (12) is F
ET, (13) is the gold ribbon, (14) is the first distributed constant line, (15) is the second distributed constant line, (16) is F
E T , (17) is the third distributed constant line, (18
) is the fourth distribution constant III.

(19) is an input terminal, (20) is an output terminal, (21) is an input dielectric substrate, (22) is an input high dielectric constant substrate, (23)
) is the output dielectric substrate, (24) is the FET chip, (25
) is a two-way divider configured on a package, (26) is a two-way divider configured on an input dielectric substrate, (27) is a two-way combiner configured on an output dielectric substrate, and (28) is a package. This is a two-synthesizer configured as follows.

Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] In a microwave high-power amplifier that houses four semiconductor elements and a four-way distribution/synthesizing circuit in a package, the input power of the four-way divider is divided into two parts by a first two-way divider, and the output is then divided into two parts by a first two-way divider. The configuration is such that a 2-divider divides the output into 2 parts, and a 4-synthesizer divides the outputs of the four semiconductor elements into two first
The first two combiners constituting the four-way divider combine the two combiners, and the output is further combined by the second two combiner.
The two-way divider and the second two-way divider are each constructed of microstrip lines on separate dielectric substrates, and the lengths of the microstrip lines constituting the first and second two-way dividers are set at the signal frequency. A two-stage impedance transformer using a one-wavelength distribution line is configured, and the four
The first 2-synthesizer and the second 2-synthesizer that make up the synthesizer are each constructed of microstrip lines on separate dielectric substrates, and the microstrip lines that make up the first and second 2-synthesizers are 1. A microwave high-output amplifier characterized in that the length is approximately one wavelength at a signal frequency, and a two-stage impedance transformer is configured using a single-wavelength distribution line.