JPH029748A - Ceramics and circuit substrate formed by using the same ceramics and electronic circuit substrate as well as production of ceramics - Google Patents

Abstract

PURPOSE:To obtain the ceramics which are delineated with and contain plural functional parts in a sufficiently separated state by supplying Al2O3 to the surface of a molding formed by incorporating a grain size adjusting agent, etc., to essential components consisting of TiO2 and SrO and diffusing the same to the inside of the components. CONSTITUTION:The molding contg., by molar %, the grain size adjusting agent and 0.02-0.4% valancy control agent to 100 (molar part) essential components consisting of 49.5-54% TiO2 and 50.5-46% SrO is formed and an insulating layer is incorporated into the grain boundary of semiconductor ceramics. The above- mentioned adjusting agent is selected from 0.5-5.3 MnO2, 0.2-4 CuO, etc. The above-mentioned valency control agent is selected from Nb2O5, Ta2O5, WO3, etc. The Al2O3 or a mixture and/or compd. contg. the same is supplied to the surface of said molding and is diffused into the molding, by which 0.2-5 Al3O3 is incorporated into the molding to provide a low dielectric region.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a ceramic that can be used as an electronic material such as a dielectric ceramic substrate, a circuit board and an electronic circuit board using this ceramic, and a method for manufacturing the ceramic. Regarding.

[Conventional technology]

Conventionally, electronic circuit boards have been configured with only a conductor circuit, a conductor circuit and a resistor, or a conductor circuit and a resistor and a limited range of capacitors, and other functional parts have been separated as elements and mounted on the base. It had been.

That is, for example, in a conventional ceramic board, the main part is a board with built-in conductors and resistors, and a capacitor is attached as a chip component by soldering. For this reason, there was a limit to the miniaturization of electronic circuits. An example is shown in FIG. 111 is a ceramic substrate, 112 is a conductor circuit, 113 is a resistor, and 114 is a chip capacitor.

In recent years, attempts have been made to incorporate a plurality of capacitors within the same ceramic substrate by changing the dielectric constant within the same substrate.

[Problem that the invention seeks to solve]

However, conventionally, it has been extremely difficult to form different dielectric parts on the same substrate, and as is obvious when considering the complexity of manufacturing multilayer ceramic capacitors, for example, it is difficult to form substrates with multiple capacitors built-in. Currently, this has not yet been realized or put into practical use. Additionally, it is an important technical challenge to separate the high dielectric constant parts as device functional parts to the extent that they do not affect each other's operation within the limited structural space. Ta.

Furthermore, the problem of separating and incorporating functional parts related to electronic components or circuit boards is not limited to dielectric ceramics, but when trying to form two or more functional parts of the same type or different types in ceramics. It was widely manifested.

(Means for Solving the Problems) A first object of the present invention is to provide a ceramic in which a plurality of functional parts can be defined and incorporated in a sufficiently separated state, and a method for manufacturing the same.

A second object of the present invention is to construct a ceramic device that can define and incorporate a plurality of functional parts in a sufficiently separated state, as described above, so that the functional parts of the elements can be sufficiently separated from each other. It is an object of the present invention to provide a circuit board and an electronic circuit board that can house a plurality of electronic component constituent units in one state.

The first purpose is to reduce Ti0z 49.50 to 54.0
As a particle size regulator, for 100 mol parts of the main component consisting of 0 mol% and 5r050-46.00 mol%,
Mn0t 0.50-5.30 mol parts, CuO0.2
0 to 4.00 mole parts, ZrOio, and 20 to 4.5 mole parts;

Ta205. WO3 and L a 20 , + D y
At least 1fi valence control agent 0.02-0.4 selected from the group of oxides consisting of lanthanum series elements such as tO5
A first region made of dielectric ceramic having an insulating layer at the grain boundary of the semiconductor ceramic contains 0.0 mole part, and the composition of the first region contains 0.0 mole part with respect to 100 mole parts of the main component. 2
and a second region made of dielectric ceramic having a composition further containing 0 to 5.00 mole parts of Al120s.

Further, the first purpose is to
As a particle size adjusting agent, for 100 mol parts of the main component consisting of 0 mol% and SrO50.50 to 46.00 mol%,
MnO20.50~5.30 mol parts, CuO0.20~
4.00 mole parts, ZrO20, and one species selected from 20 to 4.5 mole parts, and NbzOs.

AJZZ Os or Al120s 60-99°9 mol% and 5
ift, Zn0. Mn0. at least one component of
This is achieved by a method for manufacturing a ceramic, which comprises the steps of supplying a mixture and/or compound consisting of 0 to 0.1 mol % and diffusing the compound into the interior of the molded body.

The second purpose is to add Mn as a particle size adjusting agent to 100 mol parts of the main components consisting of TiO249.50 to 54.00 mol% and 5r050 to 46.00 mol%.
O20, 50-5.30 mol parts, CuO0, 20-4.
00 mole parts, ZrOzo, and one selected from 20 to 4.5 mole parts, and Nb2 os .

Ta20B, W0. and La20s r Dy20,
A dielectric ceramic having an insulating layer at the grain boundary of a semiconductor ceramic containing 0.02 to 0.40 mole part of at least one valence control agent selected from the oxide group consisting of lanthanum series elements such as a first region consisting of 0.20 to 5.0 molar parts per 100 mole parts of the main component;
and a second region made of dielectric ceramic having a composition further containing 00 molar parts of IQ2o, characterized by having an electrode inside or on the surface of the ceramic. Circuit board and TfOz
49.50-54.00 mol% and SrO 50.5
With respect to 100 mol parts of the main component consisting of 0 to 46.00 mol%, 0.50 to 5.30 mol parts of MnO□, 0.20 to 4.00 mol parts of CuO, and 20.20 mol of ZrO are added as particle size regulators.
1 fi selected from 20 to 4.5 mole parts,
and contains 0.02 to 0.40 mole part of at least one valence control agent selected from the group of oxides consisting of lanthanum series elements such as NbzOs, Ta30@, WO3, and La203, Dy20s. A first region made of dielectric porcelain having an insulating layer at the grain boundaries of the semiconductor porcelain, and a composition of the first region including the main component 100.
0.20 to 5.00 mole parts of AIL2 based on mole parts
a second region made of dielectric ceramic having a composition further containing o, an electrode is provided inside or on the surface of the ceramic, and an electronic circuit component is mounted on the ceramic. This is achieved by using an electronic circuit board.

[Description and Examples of the Invention]

When the ceramic of the present invention is used, for example, as an electronic material ceramic, the functional parts that can be formed in the ceramic of the present invention include, for example, a dielectric constituting a capacitor, a conductor, a semiconductor, a resistor, an insulator, a diode, Examples include electronic component units such as transistors. In the present invention, these functional parts can be formed in the first region or the second region, and
It is also possible to form a combination of these regions, a combination of these regions and regions other than these regions, or a region other than these regions.

Further, for example, two or more of the first regions may be arranged separately with the second region interposed therebetween, or conversely, two or more of the second regions may be arranged with the first region interposed therebetween. If the first area or the second area is arranged as a branch,
Two or more functional parts constituted by the regions can be formed in a sufficiently separated state. Moreover, both the first region and the second region can be used as a functional part.

The second region according to the present invention can be used as a region with different characteristics by freely selecting the amount of Af1203 used, and can be used as various functional parts as desired, or It can also be used as an area for dividing functional parts. Therefore, one or two parts where AJ2203 is present in the ceramic
By forming one or more, 1-? Alternatively, two or more desired numbers of functional parts may be defined with sufficient separation.

When the ceramic of the present invention is used, for example, as an electronic material ceramic, the functional part of the first region is preferably a semiconductor, a dielectric for constituting a capacitor, a conductor, a resistor, an insulator, a diode, a transistor, etc. It is possible to exemplify the constituent units of electronic components. In addition, when the functional part of the first region is divided, the second region is preferably, for example, an insulator for a semiconductor, a conductor, a resistor, a low-rust electric material for a high-flexibility electric material for constituting a capacitor, etc. can be mentioned.

For example, when forming a dielectric region constituting a capacitor as a functional part, AfL203 or AIL203 according to the invention may be used in an amount of 60 to 99.9 mol% and SiO2.
, Zn0. At least 1f of MnO2! 1 component is 40
A region in which a mixture and/or compound of up to 0.1 mol % is present by diffusion or the like can be used as a region for separating the dielectric regions constituting the capacitor.

As an example of the ceramic of the method of the present invention, for a plate-shaped dielectric ceramic substrate, a dielectric region (first region) constituting the capacitor and A 20 , Q 20 , or Af
120s and Sf0. , ZnO.

Examples of the shape of a region (second region) with a low visiting rate formed using a portion where at least one kind of MnO□ exists due to diffusion or the like are shown in FIGS. 1 to 3.

In the examples shown in FIGS. 1 to 3, 1 is a plate-shaped dielectric ceramic substrate, A is a first region, and B is a second region.

In FIG. 1, a second region B with a rectangular cross section reaching both main surfaces of the plate-shaped dielectric ceramic substrate 1 is provided, and this region B
Two first regions A, A separated from each other are provided on both sides of the region.

In the example shown in FIG. 2, second regions B, B each having a rectangular cross section are provided in the surface layer portions of both main surfaces of the porcelain 1, and
, B, two mutually separated first areas A,
A is provided.

In the example shown in FIG. 3, a second region B with a rectangular cross section is provided on the surface layer of one main surface of the porcelain 1, and with this region B in between,
Two mutually separated first regions A, A are provided.

In addition, in the examples shown in FIGS. 1 to 3, the second area B is 1
Although one or two areas are provided, the number is not limited to this and can be determined depending on the desired number of functional parts (first areas), and it goes without saying that three or more areas may be provided. .

When the first region is a dielectric region for constituting a capacitor, the first dielectric ceramic must have a high electric constant of 8, but in addition to this, dielectric loss and capacitance must be reduced. It is desired that the characteristics of the dielectric itself and the capacitor, such as the rate of temperature change, are practically preferable.

In this case, the dielectric constant of the first dielectric ceramic is 35,
000 or more is preferable. By kneading, it is possible to form a capacitor with a capacitance of about 0.047μF, even if the shape conditions of the ceramic are taken into account.For example, when applied to video circuits, it is about half of the ceramic chip capacitors in general use. types of capacitors can be formed in ceramic.

Further, when the first region is used as a high dielectric region in this way, it is preferable that the dielectric constant of the first dielectric BN ceramic is 10 times or more that of the second dielectric ceramic. This is a performance required to eliminate the influence of functional parts on each other, and a difference of 10 times or more in dielectric constant is very advantageous in terms of circuit miniaturization.

When the first region is a high dielectric region, the porcelain constituting the first region should first have a high electric constant and secondly have a composition with good performance such as tan δ and temperature characteristics. is preferred. Semiconductor porcelain with insulated grain boundaries is known as one that satisfies these requirements.

In recent years, as this type of semiconductor porcelain, those whose main component is strontium titanate have been widely used.

Here, main component 1 consisting of TiO249,50-54.00 mol% and SrO50,50-46.00 mol%
00 mole parts, Mn0zo, 5 as a particle size regulator
1 selected from 0 to 5.30 mol parts, Cn0.20 to 4.00 mol parts, and ZrO゜0.20 to 4.5 mol parts.
fi, and Nb2os, Ta, OS, WO
.

Bi20. .

For those insulated with PBO, etc., (1) dielectric constant = 35,000 to 130,000 (2) tan
δ≦1% (3) It has good dielectric properties with a temperature change in dielectric constant within ±15% in the range of 125°C to +85°C. ” Tie is the main component in this semiconductor porcelain.

and SrO are composite oxides such as solid solutions, TiO2, SrO
Each oxide may be present in the composition as a single oxide or as a mixture thereof. The amount ratio of Tie2 and SrO in the composition was 5 to 4950 to 54.00 mol% of Tie.
The reason why r05050 to 46.00 mol% was set was Tie2
When the amount of SrO increases, that is, when the amount of SrO decreases, the desired conductivity of the dielectric ceramic decreases, temperature changes in dielectric loss and dielectric constant increase, and the insulation resistance of the ceramic decreases. When the amount of Tie2 decreases, that is, when the amount of SrO increases, the dielectric constant of the desired dielectric ceramic decreases, and the temperature change in the dielectric constant increases. Tie in the composition of the present invention.

The quantity ratio of SrO and SrO is determined in order to optimally exhibit desired properties such as dielectric constant, existing electric loss, temperature change in dielectric constant, insulation resistance of ceramics, and semiconductor ability in a well-balanced manner.

In the ceramic of the present invention, Mn0z, Cu0. ZrO
2 has the role of adjusting the grain size of the crystals constituting the porcelain, that is, as a grain size adjusting agent, and when added in an appropriate amount, it increases the grain size of the crystals and greatly contributes to increasing the dielectric constant. MnO
2.Cub.

Regarding ZrO2, the amount used is shown in the above Tie.

The reason for limiting the amount to 0.50, 0.20, and 0.20 mole parts or more with respect to 100 mole parts of the main components consisting of SrO and SrO is that if it is less than that, the 8 electric constant of the desired dielectric ceramic will be noticeable. This is because the value decreases to . Moreover, Mn0. ,Cub,
For ZrO2, the amount used was limited to 5.30, 4.00, and 4.50 mol parts or less per 100 mol parts of the main component, respectively, because exceeding these amounts would cause an increase in 8-electric loss. This is because it becomes noticeable.

Next, N bx used in the ceramic of the present invention
O@, Ta20B, WO3 and La.

03 * At least one valence control agent selected from the group of oxides consisting of lanthanum series elements such as DyzOs is effective in converting ceramics into semiconductors, and the amount used is 100 mole parts of the main component. The reason why the amount of the valence control agent is limited to 0.02 part by mole or more is that if the amount of the valence control agent is less than 0.02 part by mole, the semiconducting of the ceramic becomes insufficient and the reading rate decreases. On the other hand, the reason why the amount of the valence control agent is limited to 0.4 mol or less is that if it exceeds 0.4 mol part, the dielectric constant decreases and the 8-electrode loss increases.

One of the features of the present invention is that the telephone body porcelain constituting the second region has a different refractive index from that of the first region due to the presence of A1.203.

In order for the dielectric ceramics of the first and second regions to exist in the ceramic as an integral structure, it is necessary to have reactivity at the interface and, conversely, to deform at the joint. It is desirable to prevent the reactivity from becoming too large so that the strength distribution does not change significantly or stress is included.

In the present invention, the electrical characteristics of the porcelain are A120. This method takes advantage of the property that it can change significantly depending on the presence of the ceramic, and this makes it possible to separate the functional parts within the ceramic. For example, as detailed in the reference examples below, An, 0. It has been confirmed that when the amount of addition is changed by a small amount, the galvanicity rate changes extremely significantly between the order of several hundred and several hundred thousand. Therefore, regions with different dielectric constants can be defined and incorporated within the same ceramic without significantly changing the composition of the ceramic.

An example of a method for manufacturing the ceramic of the present invention will be described below. Here, the ceramic forming composition constituting the semiconductor ceramic in the first region is designated as CI, and the ceramic forming composition constituting the second region is designated as 02.

This manufacturing example can be carried out by the steps shown in FIG.

That is, the mold 11 shown in FIG. 4 is provided with a removable partition plate 12, 13.14 is filled with C3, 15 is filled with 02.
Fill it with water and remove the partition plate.

Then, pressure molding is performed, and the molded product is shown in Fig. 5.
21, 22 are filled with C particles, and 23 are filled with C2 particle groups. In Figure 5, for example, ax3mm, b=2m
m, c = 3mm% d = 10mm, e (thickness) = 0.5
It was set to 5 mm. This molded body is first fired to become a semiconductor,
Next, for example, an additive that becomes a diffusion component to the grain boundaries is applied to the surface of the semiconductor 1III device thus obtained, and an insulating layer is formed at the grain boundaries of the semiconductor porcelain by secondary firing to form a telephone porcelain. become

An example of the shape of the ceramic of the present invention is shown in FIG. 7(a) (plan view) and FIG. 7(b) (sectional view taken along line AA in FIG. 7(a)).

The ceramic shown in FIGS. 7(a) and 7(b) has a plurality of high permittivity regions 71, 71 .
71. ... are defined, and these regions are low dielectric constant regions yg72, 72, 72 . They are separated from each other by...

Next, the circuit board of the present invention has at least an electrode inside or around the ceramic of the present invention, and if necessary, at least 1f! of a conductor, a resistor, an insulator, etc.
It is characterized by having similar functional parts.

As an example of the structure of the circuit board of the present invention, the circuit board shown in FIG. 8 is as shown in FIG.
, a pair of electrode groups 81.8ta, 81, 81 made of thick-film conductive paste such as silver paste are formed on both main surfaces of each high dielectric constant region of the ceramic shown in (b).
a, 81°81a.

Further, the example of the circuit board shown in FIG. 9 is formed by leaving a pier hole portion 91 provided as necessary by, for example, screen printing an insulating paste such as glass on the circuit board shown in FIG. 8. Insulating layers 92 and 92a, a conductive circuit portion 93 printed inside the pier hole 91 and on the insulating layer, and a resistor portion 94 are provided.

Further, the electronic circuit board of the present invention has an electrode inside or around the ceramic of the present invention, and if necessary, at least one functional part of a conductor, a resistor, an insulator, etc. is present, and It is characterized by having electronic circuit components mounted on this ceramic.

For example, the electronic circuit board shown in FIG. 10 has a flat package 1ciot connected to a conductive circuit portion 93 and a chip component 102 mounted thereon.

The present invention will be explained in more detail by showing reference examples and examples below.

In order to obtain semiconductor porcelain with the composition ratio shown in Table 1,
Each raw material was weighed out and pulverized and mixed in a wet ball mill for 12 hours. After drying, a small amount of polyvinyl alcohol was added as a binder, and the pellets were granulated into 24 to 80 meshes and molded into a disc with a diameter of 20 mm and a thickness of 0.7 mm using a hydraulic press. Next, this molded disk was calcined in the atmosphere at 950° C. for 1 hour to burn off the binder. After cooling this to room temperature, it was fired at 1400° C. for 4 hours in a reducing atmosphere containing 10% by volume of hydrogen and 90% by volume of nitrogen to obtain a semiconductor BN device.

Next, the weight ratio is Ethyl alcohol: Bi20axlO:1 Ethyl alcohol: B120s: Cu0I+1Ilo:0
．． A suspension consisting of 7:0.3 ethyl alcohol: P60=10:1 was prepared. The semiconductor porcelain was soaked in one of the above suspensions, and then fired at 1250° C. for 0.5 hours in an oxidizing atmosphere to form an insulating layer at the grain boundaries.

The thus obtained dielectric ceramic disk (sample no.

Apply silver paste to both sides of 1 to 25) and heat at 850℃ for 3
After baking for 0 minutes, electrodes were formed and a capacitor was manufactured.

The dielectric constant (ε), octaelectric loss (tan δ), and insulation resistance (
IR) and dielectric constant temperature characteristics (temperature change rate at −25° C. and +85° C. with respect to 25° C.) were measured, and the results are shown in Table 1.

The measurement conditions were 25° C. and a frequency of 1 kHz. Note that * in Table 1 indicates samples outside the scope of the present invention.

In addition, this high conductivity composition (hereinafter referred to as C1) contains AAzO.
As the amount of added Au20s increases, the ceramic crystal grain size decreases, the volume resistivity of the semiconductor ceramic increases, and as a result, the permittivity of the dielectric ceramic decreases significantly.

Table 2 illustrates the effects of adding Aft20s.

In C8, its main component (Ti04950~54.0
0 mol% and 5r05050-46.00 mol%) 1
8λ20 for 00 mole parts. When the amount of addition is less than 0.20 parts by mole, the dielectric constant decreases little, and when approximately 1.5 parts by mole is added, the dielectric constant decreases to below 500.

If the amount added is further increased, the dielectric constant decreases, but the tendency is slow, and when the amount exceeds 5 mole parts, the sinterability decreases and the mechanical strength (represented by bending strength) decreases, which is not preferable.

Therefore, when adding An203, the amount that can obtain the desired dielectric constant is determined by experiment with 5 molar parts or less, but the dielectric constant ε1 of the first region and the dielectric constant 6. In order to design the ratio 61/ε2 to be 10 or more as described above, it is necessary to add 0.120 to 5.00 mole parts.

As is clear from Table 2, by changing the amount of Aλ2OS added, the dielectric constant shows an extremely large change.

Further effects of adding Al120s are illustrated in Table 3.

In order to obtain the ceramic shown in Figure 11, a partition plate was erected in the center of the mold, each of the divided spaces was filled with the powder of the specified composition shown in Table 3, and press molding was performed. Dielectric porcelain was made according to the process described above.

The raw materials for each sample shown in Table 's1 were weighed out and pulverized and mixed in a wet ball mill for 12 hours. After drying this, add a small amount of polyvinyl alcohol as a binder to 24~8
Granulated into 0 mesh and made into a diameter of 20mm using a hydraulic press.
It was molded into a disk with a thickness of 0.7 mm. Next, this molded disk was calcined in the atmosphere at 950° C. for 1 hour to burn off the binder.

After cooling this to room temperature, it was fired at 1400° C. for 4 hours in a reducing atmosphere consisting of 10% by volume hydrogen and 90% by volume nitrogen.

The semiconductor porcelain thus obtained was immersed in a suspension of ethyl alcohol B1203:Cu0=10:0.720.3 in a weight ratio of 0.5 to 1250°C.
An insulating layer was formed at the grain boundaries by firing in an oxidizing atmosphere for several hours.

The bending strength of the ceramic bonded body obtained in this way is
Measurements were made using the method shown in the figure. The results are shown in Table 3.

The main component of C1 is 100 m o j? Al12 for part
If the addition amount h<5 m o exceeds 1 part, the mechanical strength of the bonding interface with the first region decreases significantly as shown.

Here, Al1xOs alone or Al2203 and S
io,,Zn0. Mn0. Ethyl cellulose was added as a binder to each of the mixtures consisting of at least one component, and the mixtures were made into a paste with a thickness of 0.7, 2.
0 mm of C (using the composition of sample No. 3) was applied to both surfaces of the molded body, and this was applied during the firing process for semiconductors (
(N2/H2=90/10) to diffuse into the interior of the porcelain.

Next, Bi was applied to the surface of this object. After depositing a quantity of
The dielectric constant of each electrode was measured by baking the g electrode. The results are shown in Table 4.

From Table 4, when Al22O is applied alone, the thickness of the molded body is 0.7 mm, and the dielectric constant becomes AflxOs due to diffusion.
It is significantly reduced to less than 1/10 of that without coating. However, when the thickness of the molded body increases to 2.0 mm, diffusion does not progress to the inside sufficiently, and the dielectric constant decreases to 1/1.
It cannot be less than 10.

In other words, application of Al2203 alone is effective as long as the thickness of the molded body (porcelain) does not significantly exceed 0.7 mm.

On the other hand, “CA 1120s 60-99, 9
Mol% and S i 02 , Zn0. When a mixture (and/or compound) consisting of 40 to 0.1 mol% of at least one component selected from Mn0z is applied, the dielectric constant remains the same even when the thickness of the molded body is 2.0 mm. It is markedly reduced to 1/10 or less, suggesting an effect of promoting diffusion. In other words, Sf0. .

Zn0. Mn0. is used in combination in the present invention as a component that promotes the diffusion of Al1xOs.

That is, 5 i Q2 , Zn0. If the amount of at least 1fi selected from MnO7 exceeds 40 mol%, the strength will decrease significantly, and if it is less than 0.1 mol%, it will have the effect of promoting the diffusion of Al1203. For example, if the thickness of the molded body increases to 2 mm (the thickness of porcelain is approximately 1.6 mm), diffusion will not proceed to the inside sufficiently and the dielectric constant will not be less than 1/10. .

Here Al1xOs or A42203 60 ~ 99
．． 9 mol% and S i 02. Z n 0. M n
At least 1f selected from 02! Ingredients, 40~
The amount of supply when forming a layer of a mixture containing 0.1 mol % on the surface of a molded article will be described.

In this case, the supply amount changes depending on the thickness of the molded body, and the supply amount increases as the thickness increases, but since the thickness of commonly used porcelain substrates is at most 1.6 mm, it is within this range. Considering this, the relationship is illustrated as shown in Table 4. In this case, the thickness of the molded body is 2.0 mm, which approximately corresponds to the thickness of the ceramic substrate of 1.6 mm.

From Table 4, it can be seen that as the amount supplied to the molded body increases, the dielectric constant decreases, while the bending strength tends to decrease. Therefore, it is important to determine the supply amount by balancing the dielectric constant and strength, but if the supply amount is 0.15
Below mg/c, the decrease in dielectric constant is slow;
If it exceeds 0 mg/cd, the bending strength will drop significantly, which is undesirable.
15 mg/cm” or more, 20 mg/c
m 2 or less is suitable for practical use.

Next, one embodiment of the ceramic manufacturing process shown in FIG. 12 will be described in sequence with reference to FIG. 13.

(1) After weighing the raw materials having a composition of C+, they are mixed in a wet ball mill and dried.

(2) A binder such as polyvinyl alcohol is added to this powder by press molding, extrusion molding, etc. to obtain a molded body in a predetermined shape.

(3) Next, this molded body (reference numeral 51 in FIG. 13(a))
Al2xOs or An20. 6
0-99.9 mol% and 5iOz, ZnOlMnO2
A paste (indicated by reference numeral 52 in FIG. 13(a)) consisting of a mixed powder containing at least one component of 40 to 061 mol % and a binder such as ethyl cellulose was heated to 0.
Apply to 5mm width.

(4) Calcinate at 600 to 1200° C. in the air to remove binder components in the molded body and in the coating paste.

(5) This calcined body is fired at 1320 to 1450° C. in a reducing atmosphere such as a mixed gas of hydrogen and nitrogen, a mixed gas of hydrogen and argon, or a neutral atmosphere such as nitrogen or argon to obtain semiconductor porcelain. Also, during this process, the coating material diffuses into the interior.

(6) In order to completely eliminate the grain boundaries of this semiconductor porcelain, for example, the weight ratio of ethyl alcohol:Bi2O52Cu0=1
After soaking in a suspension with a ratio of 0.020, 7:0.3, it is fired at 1100 to 1300°C in the air.

(7) Agi pole (
(shown as 50 in FIG. 13(b)) was burned.

Note that the poles are not limited to Ag, but may also be Au, Al, or Ni.

Cu, Zn, etc. may also be used.

Moreover, in FIG. 13(b), a=3 mm.

b=1mm, c=3mm, d=10mm, e=0.55
mm and a=1.6 mm (a to d are the same) were created.

Table 5 shows the capacitance of the functional part as a capacitor of the circuit board thus prepared and the capacitance indicating the state of separation thereof.

The capacitance of the functional part as a capacitor is measured as the capacitance between the electrodes that sandwich the visited ceramic substrate parallel to its thickness direction.The capacitance indicating the state of separation is the capacitance between the electrodes on the same plane, and is the cross capacitance. It was shown as

From the above, it was found that An, 0.
or Al1xOs and 5in2Zn0. If it is possible to diffuse into the molded body after forming a layer consisting of a mixture of at least 1 fli of MnO□, a region (second region) having a significantly different dielectric constant can be easily formed in the process. It turns out.

The molded body used in the present invention is usually a molded body (such as a green compact or a calcined product of the green compact) that is a precursor for forming porcelain, but it may also be a shaped body that has already been made into porcelain. ,Ia
A molded body obtained by crushing the container and molding it into a green compact again may be used.

In the present invention, Al120s or AtJ220° and 5iOz, Zn0. Mn0. Diffusion of the mixture of at least one component of is normally carried out during calcination. Therefore, if a molded body is used as a precursor for forming the bilware, heat diffusion by firing and turning into porcelain can be performed at the same time, which is industrially very advantageous.

The present invention takes advantage of the property that the electrical properties of porcelain can be significantly changed by adding a large amount of Al203, and this makes it possible to separate functional parts within the ceramic. If the thickness of the porcelain is thick, use Sin, Zn0. Mn0. At least 1f! For example, the dielectric constant can be significantly changed by forming it on the surface of a molded body together with the components by coating or the like, and by making it exist inside the porcelain by diffusion or the like.

Therefore, regions with different dielectric constants can be defined and incorporated within the same ceramic without significantly changing the composition of the ceramic.

An, 0. or AIt2 os and Sin.

Zn0. The layer consisting of at least 1 fl of MnO2 can be formed on the surface of the molded body by, for example, printing, spraying, chemical vapor deposition (Chea + 1 cal Vapor D), etc.
It can be carried out by epositing, vapor deposition, dipping, etc.

〔Effect of the invention〕

According to the ceramic and its manufacturing method of the present invention, a plurality of functional parts can be housed in a sufficiently separated state.

Further, according to the circuit board and electronic circuit board of the present invention, as described above, by being made of ceramic that can incorporate a plurality of functional parts in a sufficiently separated state, the functional parts of the elements can be mutually separated. It is possible to incorporate a plurality of electronic component units in a sufficiently separated state.

[Brief explanation of the drawing]

1 to 3 are schematic cross-sectional views showing examples of the shapes of the first region and the second region, respectively, in the ceramic of the present invention. FIG. 4 is a schematic perspective view of a mold for manufacturing the ceramic of the present invention used in Examples, and FIG. 5 is a schematic perspective view of a ceramic manufactured using a molded body formed by this mold as a raw material. FIG. 6 is an explanatory diagram of the manufacturing process of this ceramic. FIG. 7(a) is a plan view showing an example of the structure of the ceramic of the present invention, and FIG. 7(b) is a sectional view taken along the line AA in FIG. 7(a). 8 and 9 are schematic sectional views showing examples of the structure of the circuit board of the present invention, respectively, and FIG. 1O is a schematic sectional view showing an example of the structure of the electronic circuit board of the invention. FIG. 11 is a schematic cross-sectional view showing a method for measuring the bending strength of a ceramic molded body. FIG. 12 is an explanatory diagram of the manufacturing process of the ceramic according to the present invention, and FIGS. 13(a) and 13(b) are AJ:! manufactured by the manufacturing process of FIG. 12, respectively. , 20, etc., and a schematic perspective view of a molded body and an L-shaped ceramic on which electrodes are formed. FIG. 14 is a schematic cross-sectional view of a conventional ceramic substrate. A ------------1--------------------------First region, B-----1------------------------
-------Second area, 71, 71.71 -------
---High dielectric constant part, 72, 72.72--
--Low dielectric constant part, 81 81 a -----------
---One electrode, 91 ------------
−−−−−Peer Hall, 92−−−−−−−−−−
----------Insulator, 93 ------------
----------One conductor circuit, 94 ----------
------------Resistor, 101 -----
-----Flat package IC2102---
−−−−−−−−−−−−Chip parts.

Claims (9)

[Claims] (1) TiO_249.50-54.00 mol% and S
Main component 10 consisting of rO50.50-46.00 mol%
MnO_20.5 as a particle size regulator for 0 mole part
Nb_2O_5, Ta_2O_5,
An insulating layer is formed at the grain boundaries of a semiconductor ceramic containing 0.02 to 0.40 mole part of at least one valence control agent selected from the oxide group consisting of lanthanum series elements such as WO_3 and La_2O_3, Dy_2O_3. A first region made of dielectric ceramic having a composition, and a composition of the first region,
A second region made of dielectric ceramic having a composition further containing 0.20 to 5.00 mole parts of Al_2O_3 based on 100 mole parts of the main component. (2) The dielectric constant of the dielectric ceramic in the first region is the same as the dielectric constant of the dielectric ceramic in the first region.
The ceramic according to claim (1), which has a dielectric constant 10 times or more that of dielectric ceramic in the region of . (3) TiO_249.50-54.00 mol% and S
Main component 10 consisting of rO50.50-46.00 mol%
MnO_20.5 as a particle size regulator for 0 mole part
Nb_2O_5, Ta_2O_5,
An insulating layer is formed at the grain boundaries of a semiconductor ceramic containing 0.02 to 0.40 mole part of at least one valence control agent selected from the oxide group consisting of lanthanum series elements such as WO_3 and La_2O_3, Dy_2O_3. A first region made of dielectric ceramic having a composition, and a composition of the first region,
a second region made of dielectric ceramic having a composition further containing 0.20 to 5.00 mole parts of Al_2O_3 based on 100 mole parts of the main component; and an electrode on the inside or surface of the ceramic. A circuit board characterized by having: (4) The dielectric constant of the dielectric ceramic in the first region is the same as that of the second region.
3. The circuit board according to claim 3, wherein the dielectric constant is 10 times or more the dielectric constant of the dielectric ceramic in the region. (5) TiO_249.50-54.00 mol% and S
Main component 10 consisting of rO50.50-46.00 mol%
MnO_20.5 as a particle size regulator for 0 mole part
Nb_2O_5, Ta_2O_5,
An insulating layer is formed at the grain boundaries of a semiconductor ceramic containing 0.02 to 0.40 mole part of at least one valence control agent selected from the oxide group consisting of lanthanum series elements such as WO_3 and La_2O_3, Dy_2O_3. A first region made of dielectric ceramic having a composition, and a composition of the first region,
a second region made of dielectric ceramic having a composition further containing 0.20 to 5.00 mole parts of Al_2O_3 based on 100 mole parts of the main component; and an electrode on the inside or surface of the ceramic. An electronic circuit board comprising: an electronic circuit component mounted on the ceramic. (6) The dielectric constant of the dielectric ceramic in the first region is the same as the dielectric constant of the dielectric ceramic in the first region.
The electronic circuit substrate according to claim 5, wherein the dielectric constant is 10 times or more the dielectric constant of the dielectric ceramic in the region. (7) TiO_249.50-54.00 mol% and S
Main component 10 consisting of rO50.50-46.00 mol%
MnO_20.5 as a particle size regulator for 0 mole part
Nb_2O_5, Ta_2O_5,
Al_2O_3 or Al
_2O_3 is 60 to 99.9 mol% and SiO_2,
At least one component of ZnO, MnO_2 is 40 to 0
．． A method for producing a ceramic, comprising the step of supplying a mixture and/or compound consisting of 1 mol % and diffusing the compound into the interior of the molded body. (8) Claim No. (7), wherein the diffusion is by firing.
The method for manufacturing the ceramic described in Section 1. (9) The method for manufacturing a ceramic according to claim (7), wherein the diffusion is performed in a neutral or reducing atmosphere.