JPH0294514A - Production device for semiconductor - Google Patents
Production device for semiconductorInfo
- Publication number
- JPH0294514A JPH0294514A JP63246257A JP24625788A JPH0294514A JP H0294514 A JPH0294514 A JP H0294514A JP 63246257 A JP63246257 A JP 63246257A JP 24625788 A JP24625788 A JP 24625788A JP H0294514 A JPH0294514 A JP H0294514A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- wafer
- mask
- holding means
- substrate holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 7
- 238000010008 shearing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 45
- 230000000694 effects Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 and for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、マスク等の原板上に描かれたパターンをウニ
八等の基板上に転写する半導体製造装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus that transfers a pattern drawn on an original plate such as a mask onto a substrate such as Urchin.
［従来の技術］
従来、このような半導体製造装置において用いられる露
光マスクを固定する支持枠であるマスクフレームの材質
は、周囲温度の変動によるマスクパターンの歪を抑える
ため、比較的熱膨張係数の小さなものが使われていた。[Prior Art] Conventionally, the material of the mask frame, which is the support frame for fixing the exposure mask used in such semiconductor manufacturing equipment, has a relatively low coefficient of thermal expansion in order to suppress distortion of the mask pattern due to fluctuations in ambient temperature. A small one was used.
この材質は例えば、Ｓｔ、ＡＩＬｘ ０３ 、Ｓｉ３Ｎ
４ 、ＳｉＣ，あるいは低膨張ガラス等であり、これら
の熱膨張係数は１０−６〜１０−’［Ｋ−’］である。This material is, for example, St, AILx 03, Si3N
4, SiC, or low expansion glass, and the coefficient of thermal expansion thereof is 10-6 to 10-'[K-'].
［発明が解決しようとする課題］
しかしながら、上記従来例のマスクフレームでは、熱膨
張係数の小さい物ということでマスクフレームとして使
える材質の選択の幅が限られ、また加工性を考慮した場
合にはさらに選択の自由度が少なくなってしまうという
欠点があった。[Problems to be Solved by the Invention] However, the conventional mask frame described above has a small coefficient of thermal expansion, which limits the range of materials that can be used for the mask frame, and when considering workability, Furthermore, there was a drawback that the degree of freedom of selection was reduced.
また、マスクフレームのン晶度はマスクフレームが置か
れる雰囲気の温度と同じように変動するため、熱膨張係
数の小さい材料を用いたとしても、サブミクロンのオー
ダーで焼付をする露光装置ではマスクフレームの熱歪に
よるマスクのパターン歪が問題となる。In addition, the crystallinity of the mask frame fluctuates in the same way as the temperature of the atmosphere in which the mask frame is placed, so even if a material with a small coefficient of thermal expansion is used, the mask frame is Pattern distortion of the mask due to thermal distortion becomes a problem.
さらに、熱歪を抑えるため雰囲気温度を精密に制御する
ためには、大規模で複雑な制御装置が必要となってしま
う。Furthermore, in order to precisely control the ambient temperature in order to suppress thermal distortion, a large-scale and complicated control device is required.
一方、露光によって発生した熱は、マスクで発生した熱
も含めウェハおよびウェハチャックで吸収される。する
と、ウェハとウェハチャックの温度はそれらが置かれる
雰囲気の温度より上昇し熱膨張する。したがって、マス
クフレームのみ熱膨張係数の小さい材料を使ったとして
も、ウェハとウェハチャックの熱膨張に伴なって、マス
クとウェハとの間に相対的なパターン歪が発生し、合せ
精度が悪化するという欠点があった。On the other hand, heat generated by exposure, including heat generated by the mask, is absorbed by the wafer and wafer chuck. Then, the temperature of the wafer and wafer chuck rises above the temperature of the atmosphere in which they are placed, causing thermal expansion. Therefore, even if only the mask frame is made of a material with a small coefficient of thermal expansion, relative pattern distortion will occur between the mask and wafer due to thermal expansion of the wafer and wafer chuck, resulting in poor alignment accuracy. There was a drawback.
また、上記欠点を解決する方法として、ウェハチャック
内に一定温度の媒体を流し、ウェハとウェハチャックの
温度を一定温度に保つ提案がされている。しかしながら
、この場合も、マスクフレームの熱歪による前記マスク
のパターン歪が問題となる。In addition, as a method for solving the above-mentioned drawbacks, a proposal has been made to flow a medium at a constant temperature into the wafer chuck to maintain the temperature of the wafer and the wafer chuck at a constant temperature. However, even in this case, pattern distortion of the mask due to thermal distortion of the mask frame poses a problem.
本発明は、上述の従来形における問題点に鑑み、マスク
フレーム等の原板の支持枠として用いることのできる材
質の選択の幅を広げ、また精密な雰囲気温度の制御をす
ることなく原板と基板との位置合せ精度を向上させるこ
とのできる半導体製造装置を提供することを目的とする
。In view of the problems with the conventional type described above, the present invention expands the range of materials that can be used as supporting frames for original plates such as mask frames, and also allows the original plate and substrate to be connected without precise atmospheric temperature control. An object of the present invention is to provide a semiconductor manufacturing apparatus that can improve alignment accuracy.
［課題を解決するための手段および作用］上記の目的を
達成するため、本発明に係る半導体製造装置は、基板に
転写すべきパターンが描かれた原板の支持枠と、基板を
保持する基板保持手段の主構造部材とを、熱膨張係数が
ほぼ同一の材質で構成することを特徴としている。[Means and effects for solving the problem] In order to achieve the above object, a semiconductor manufacturing apparatus according to the present invention includes a support frame for an original plate on which a pattern to be transferred to a substrate is drawn, and a substrate holder for holding the substrate. It is characterized in that the main structural members of the means are made of a material having substantially the same coefficient of thermal expansion.
後述の実施例において詳説するように、原板上の熱歪は
７囲気部度による原板支持枠の変形が主な原因であり、
基板の熱歪はその保持手段の熱歪が主な原因である。し
たがって、本発明により原板の支持枠と基板保持手段と
を、熱膨張係数がほぼ同一の材質で構成すれば、原板と
基板とはほぼ同程度の熱膨張を示すこととなる。As will be explained in detail in the examples below, the thermal strain on the original plate is mainly caused by the deformation of the original plate support frame due to the 7 degrees of enclosure.
Thermal distortion of the substrate is mainly caused by thermal distortion of its holding means. Therefore, if the support frame for the original plate and the substrate holding means are made of materials having substantially the same coefficient of thermal expansion according to the present invention, the original plate and the substrate will exhibit substantially the same degree of thermal expansion.
また、基板保持手段の温度とその雰囲気温度を検出し、
原板支持枠と基板保持手段とを同一の材質で構成した場
合は上記の温度の差が７となるように基板保持手段の温
度を制御し、あるいは原板支持枠と基板保持手段とを別
材質で構成した場合は上記の温度の差が基板保持手段と
原板支持枠との熱膨張係数の差に相当する所定の温度差
となるように制御することとしてもよい。このようにす
ることにより、さらに原板と基板との熱膨張の整合を図
ることができ、露光時の合せ精度の向上を達成すること
ができる。It also detects the temperature of the substrate holding means and the ambient temperature,
If the original plate support frame and the substrate holding means are made of the same material, the temperature of the substrate holding means is controlled so that the above temperature difference is 7, or the original plate support frame and the substrate holding means are made of different materials. In this case, the temperature difference may be controlled to a predetermined temperature difference corresponding to the difference in thermal expansion coefficient between the substrate holding means and the original plate support frame. By doing so, it is possible to further match the thermal expansion between the original plate and the substrate, and it is possible to improve the alignment accuracy during exposure.
［実施例コ 以下、図面を用いて本発明の詳細な説明する。[Example code] Hereinafter, the present invention will be explained in detail using the drawings.
第１図は、本発明の一実施例に係る半導体製造装置のマ
スクおよびウニ八部分の要部断面図である。また、第２
図は、第１図に示したマスクとマスクフレームをマスク
フレーム側から見た上面図である。第１．２図において
、１は露光マスク、２はマスク１上に描かれた露光パタ
ーンである。FIG. 1 is a sectional view of essential parts of a mask and a portion of a semiconductor manufacturing apparatus according to an embodiment of the present invention. Also, the second
The figure is a top view of the mask and mask frame shown in FIG. 1, viewed from the mask frame side. In FIG. 1.2, 1 is an exposure mask, and 2 is an exposure pattern drawn on the mask 1. In FIG.
３はマスク１を固定するマスクフレーム、４は露光パタ
ーン２を転写するためのウェハ、５はウェハ４の保持手
段であるウェハチャックである。マスクフレーム３とウ
ェハチャック５の主構造部材とは、同一の材質で構成さ
れている。なお、ウェハを保持する機構として良く知ら
れているのは、ウェハチャックの置かれている雰囲気と
の圧力差を利用する真空吸着と、静電気力を利用した静
電吸着があるが、本発明においては吸着方法を特に限定
しない。3 is a mask frame for fixing the mask 1; 4 is a wafer for transferring the exposure pattern 2; and 5 is a wafer chuck that is a holding means for the wafer 4. The main structural members of the mask frame 3 and the wafer chuck 5 are made of the same material. Well-known mechanisms for holding wafers include vacuum suction, which uses a pressure difference with the atmosphere in which the wafer chuck is placed, and electrostatic suction, which uses electrostatic force. The adsorption method is not particularly limited.
６−１はマスクフレーム３やウェハチャック５の置かれ
る７囲気の温度を測定するための温度センサ、６−２は
ウェハチャック５の温度を測定するための温度センサで
ある。７はその温度センサ６−１．６−２の出力信号に
応じて加熱冷却装置８を動作するための温度調節器であ
る。加熱冷却装置８は、供給口９より供給された温調媒
体の温度を調節することによりウェハチャック５の温度
を調節する。この温調媒体は、供給口９より供給され、
加熱冷却装置８で所定の温度に温度調節された後、温調
媒体通路１１を通り排出口１０より排出される。また、
温調媒体は液体でも気体でも良く、例えば水、アルコー
ル類、ヘリウム（Ｈｅ）、窒素（Ｎ２）または空気等を
使用することができる。１２は露光光を発生する露光源
である。6-1 is a temperature sensor for measuring the temperature of the surrounding air in which the mask frame 3 and wafer chuck 5 are placed, and 6-2 is a temperature sensor for measuring the temperature of wafer chuck 5. 7 is a temperature regulator for operating the heating/cooling device 8 according to the output signal of the temperature sensor 6-1, 6-2. The heating and cooling device 8 adjusts the temperature of the wafer chuck 5 by adjusting the temperature of the temperature control medium supplied from the supply port 9 . This temperature regulating medium is supplied from the supply port 9,
After the temperature is adjusted to a predetermined temperature by the heating/cooling device 8, it passes through the temperature regulating medium passage 11 and is discharged from the discharge port 10. Also,
The temperature regulating medium may be a liquid or a gas, and for example, water, alcohols, helium (He), nitrogen (N2), or air can be used. 12 is an exposure source that generates exposure light.
露光源１２から照射されるエネルギーによってマスク１
の温度は上昇する。しかし、マスク１はマスクフレーム
３に周囲が固定されているため、マスク自体の温度上昇
によるマスクパターン２の熱歪は小さい。マスクパター
ン２の熱歪の原因は、主として雰囲気の温度変化による
マスクフレームの変形によるものである。The mask 1 is exposed to the energy irradiated from the exposure source 12.
temperature increases. However, since the periphery of the mask 1 is fixed to the mask frame 3, the thermal distortion of the mask pattern 2 due to the temperature rise of the mask itself is small. The cause of thermal distortion in the mask pattern 2 is mainly due to deformation of the mask frame due to changes in ambient temperature.
マスク１で発生した熱は、マスクを通過してウェハ４お
よびウェハチャック５に吸収され、最終的にはウェハチ
ャック５内を流れる温調媒体に吸収される。このときウ
ェハ４の温度は上昇するが、ウェハ４はウェハチャック
５に一定の保持力にて保持されており、ウェハ４の熱歪
によりウェハ４とウェハチャック５の間に生ずるせん断
応力よりも上記の保持力の方が大きいので、ウェハ４の
熱歪はウェハチャック５の熱歪に従属することとなる。The heat generated by the mask 1 passes through the mask, is absorbed by the wafer 4 and the wafer chuck 5, and is finally absorbed by the temperature control medium flowing inside the wafer chuck 5. At this time, the temperature of the wafer 4 increases, but the wafer 4 is held by the wafer chuck 5 with a constant holding force, and the shear stress generated between the wafer 4 and the wafer chuck 5 due to thermal strain of the wafer 4 is Since the holding force of is larger, the thermal strain of the wafer 4 is subordinate to the thermal strain of the wafer chuck 5.
ウェハチャック５内には温調媒体が流れているため、ウ
ェハチャックの温度は、はぼ温調媒体の温度と同じであ
る。Since the temperature control medium flows inside the wafer chuck 5, the temperature of the wafer chuck is almost the same as the temperature of the temperature control medium.
本実施例によれば、マスクフレーム３とウェハチャック
５の主構造部材との材質を同一としている。したがって
、これらは同じ熱膨張係数の材質で構成されることとな
り、これによりマスクとウェハとの重ね合せ精度を向上
させることができる。また、マスクフレームの材質がウ
ェハチャックと同じであれば良いので、特に熱膨張係数
の低い材質を使う必要が無く、材質の選択の自由度が大
きいという利点がある。例えば、アルミニウム（ＡＪ２
）等の熱伝導率は比較的良いが、熱膨張係数が大きい金
属でも使用することができる。According to this embodiment, the mask frame 3 and the main structural members of the wafer chuck 5 are made of the same material. Therefore, these are made of materials with the same coefficient of thermal expansion, and thereby the overlay accuracy between the mask and the wafer can be improved. Furthermore, since the mask frame only needs to be made of the same material as the wafer chuck, there is no need to use a material with a particularly low coefficient of thermal expansion, and there is an advantage that there is a large degree of freedom in selecting the material. For example, aluminum (AJ2
) have relatively good thermal conductivity, but metals with a large coefficient of thermal expansion can also be used.
さらに、本実施例では、ウェハチャック５の温度を測定
する温度センサ６−２と、７囲気の温度を測定する温度
センサ６−１とを備え、温度調節器７によりこれらの温
度の差が零になるように温調媒体の温度を制御している
。これにより、マスク１とウェハ４の単位長さ当りの熱
歪を同等とすることができ、合せ精度のさらなる向上を
図ることができる。Further, in this embodiment, a temperature sensor 6-2 for measuring the temperature of the wafer chuck 5 and a temperature sensor 6-1 for measuring the temperature of the surrounding air are provided, and the temperature difference between these temperatures is reduced to zero by the temperature controller 7. The temperature of the temperature control medium is controlled so that Thereby, the thermal strain per unit length of the mask 1 and the wafer 4 can be made equal, and the alignment accuracy can be further improved.
また、雰囲気の温度に合わせてウェハチャックの温度を
調節しているため、雰囲気温度を精密に制御する必要が
ない。Furthermore, since the temperature of the wafer chuck is adjusted according to the temperature of the atmosphere, there is no need to precisely control the temperature of the atmosphere.
なお、上記の実施例ではウェハとウェハチャックとを同
一の材質（熱膨張係数も同一）で構成したが、本発明は
これに限ることなく、別の材質であっても熱膨張係数の
近い材質であれば用いることができる。この場合、上記
実施例と同様にウェハチャックの温度と雰囲気の温度の
差が；になるように制御すると、熱膨張係数の差に当る
熱歪がマスクとウェハとの間に相対的に生じてしまう。In the above embodiment, the wafer and the wafer chuck are made of the same material (with the same coefficient of thermal expansion), but the present invention is not limited to this, and even if they are different materials, they may be made of materials with similar coefficients of thermal expansion. If so, it can be used. In this case, if the difference between the temperature of the wafer chuck and the temperature of the atmosphere is controlled as in the above embodiment, thermal strain corresponding to the difference in thermal expansion coefficients will be generated relatively between the mask and the wafer. Put it away.
そこで、雰囲気の温度とウェハチャックの温度（温調媒
体の温度）との間に予め熱膨張係数の差に相当する温度
差を与えるように制御することによって、上記実施例と
同等の効果を得ることができる。Therefore, by controlling the temperature of the atmosphere and the temperature of the wafer chuck (temperature of the temperature control medium) so as to provide a temperature difference corresponding to the difference in coefficient of thermal expansion in advance, the same effect as in the above embodiment can be obtained. be able to.
［発明の効果］
以上説明したように、本発明によれば、クエへ等の基板
の保持手段とマスク等の原板の支持枠とを熱膨張係数が
ほぼ同一の材質で構成しているので、原板上のパターン
を基板上に転写する際の重ね合せ精度を向上させること
ができる。また、原板支持枠の材質として特に熱膨張係
数の低い材質を選択する必要がなくなり材質の選択の幅
が広がり、安価に作成することもできる。さらに、雰囲
気温度の精密な制御が不必要であるという効果がある。[Effects of the Invention] As explained above, according to the present invention, since the means for holding a substrate such as a square and the support frame for an original plate such as a mask are made of materials with substantially the same coefficient of thermal expansion, It is possible to improve the overlay accuracy when transferring the pattern on the original plate onto the substrate. Furthermore, it is no longer necessary to select a material with a particularly low coefficient of thermal expansion as the material for the original plate support frame, which widens the range of material selection and allows the material to be manufactured at low cost. A further advantage is that precise control of the ambient temperature is unnecessary.
また、基板保持手段の温度と雰囲気温度の差を７あるい
は所定温度差に制御することにより、原板上のパターン
を基板上に転写する際の重ね合せ精度をさらに向上させ
ることができる。Furthermore, by controlling the difference between the temperature of the substrate holding means and the ambient temperature to 7 or a predetermined temperature difference, it is possible to further improve the overlay accuracy when transferring the pattern on the original plate onto the substrate.
第１図は、本発明の一実施例に係る半導体製造装置のマ
スクおよびウニ八部分の要部断面図、第２図は、第１図
に示したマスクとマスクフレームをマスクフレーム側か
ら見た上面図である。
１：マスク、
２：マスクパターン、
３：マスクフレーム、
４：ウェハ、
５：ウェハチャック、
６−１．６−２：温度センサ、
７：温度調節器、
８：加熱冷却装置、
９：温調媒体供給口、
１０：温調媒体排出口、
１１：温調媒体通路、
１２：露光源。FIG. 1 is a sectional view of the main parts of a mask and a portion of a semiconductor manufacturing device according to an embodiment of the present invention, and FIG. 2 is a view of the mask and mask frame shown in FIG. 1 from the mask frame side. FIG. 1: Mask, 2: Mask pattern, 3: Mask frame, 4: Wafer, 5: Wafer chuck, 6-1.6-2: Temperature sensor, 7: Temperature controller, 8: Heating/cooling device, 9: Temperature controller Medium supply port, 10: Temperature control medium discharge port, 11: Temperature control medium passage, 12: Exposure source.
Claims (3)
導体製造装置において、上記基板の保持手段の主構造部
材と上記原板の支持枠とを熱膨張係数がほぼ同一の材質
で構成することを特徴とする半導体製造装置。(1) In a semiconductor manufacturing apparatus that transfers a pattern drawn on an original plate onto a substrate, the main structural member of the holding means for the substrate and the support frame for the original plate are made of materials with substantially the same coefficient of thermal expansion. A semiconductor manufacturing device characterized by:
の置かれる雰囲気の温度を検出する手段と、前記基板保
持手段の加熱冷却手段と、前記基板保持手段の温度と前
記基板保持手段の置かれる雰囲気の温度との差が零とな
るように前記基板保持手段の温度を制御する手段とを具
備することを特徴とする請求項１に記載の半導体製造装
置。(2) means for detecting the temperature of the substrate holding means and the temperature of the atmosphere in which the substrate holding means is placed; a means for heating and cooling the substrate holding means; and a means for detecting the temperature of the substrate holding means and the temperature of the atmosphere in which the substrate holding means is placed; 2. The semiconductor manufacturing apparatus according to claim 1, further comprising means for controlling the temperature of said substrate holding means so that a difference from the temperature of the atmosphere becomes zero.
の置かれる雰囲気の温度を検出する手段と、前記基板保
持手段の加熱冷却手段と、前記基板保持手段の温度と前
記基板保持手段の置かれる雰囲気の温度との差が前記基
板保持手段と前記原板支持枠との熱膨張係数の差に相当
する所定の温度差となるように制御する手段とを具備す
ることを特徴とする請求項１に記載の半導体製造装置。(3) means for detecting the temperature of the substrate holding means and the temperature of the atmosphere in which the substrate holding means is placed; a means for heating and cooling the substrate holding means; and a means for detecting the temperature of the substrate holding means and the temperature of the atmosphere in which the substrate holding means is placed; 2. The method according to claim 1, further comprising means for controlling the temperature difference so that the temperature difference between the substrate holding means and the original plate support frame is a predetermined temperature difference corresponding to a difference in coefficient of thermal expansion between the substrate holding means and the original plate support frame. The semiconductor manufacturing apparatus described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246257A JPH0294514A (en) | 1988-09-30 | 1988-09-30 | Production device for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246257A JPH0294514A (en) | 1988-09-30 | 1988-09-30 | Production device for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0294514A true JPH0294514A (en) | 1990-04-05 |
Family
ID=17145832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63246257A Pending JPH0294514A (en) | 1988-09-30 | 1988-09-30 | Production device for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0294514A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011085859A (en) * | 2009-10-19 | 2011-04-28 | Murata Mfg Co Ltd | Exposure device, and exposure method |
-
1988
- 1988-09-30 JP JP63246257A patent/JPH0294514A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011085859A (en) * | 2009-10-19 | 2011-04-28 | Murata Mfg Co Ltd | Exposure device, and exposure method |
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