JP2006261273A - Chamber and exposure system using the same - Google Patents

Chamber and exposure system using the same Download PDF

Info

Publication number
JP2006261273A
JP2006261273A JP2005074554A JP2005074554A JP2006261273A JP 2006261273 A JP2006261273 A JP 2006261273A JP 2005074554 A JP2005074554 A JP 2005074554A JP 2005074554 A JP2005074554 A JP 2005074554A JP 2006261273 A JP2006261273 A JP 2006261273A
Authority
JP
Japan
Prior art keywords
chamber
temperature
exposure apparatus
wall
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005074554A
Other languages
Japanese (ja)
Inventor
Toshiyuki Shigaraki
俊幸 信楽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005074554A priority Critical patent/JP2006261273A/en
Publication of JP2006261273A publication Critical patent/JP2006261273A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To save energy and stabilize temperature in the main unit of the exposure system even if a space within a chamber is sealed or in a vacuum state, and to prevent occurrence of defective products due to the abnormality of the system or the change of accuracy. <P>SOLUTION: At least one wall surface of a temperature controlling chamber 1 enclosing the main unit of the exposure system 5 is thermally insulated by a heat insulating layer 2, so as to constantly keep the temperature of an inner wall surface by using a fluid layer 3 for temperature adjustment. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ICやLSI等の半導体チップ、液晶パネル、CCD、薄膜磁気ヘッド、マイクロマシン等の微小デバイスを製造するための露光装置および該露光装置用の環境チャンバに関するものである。   The present invention relates to an exposure apparatus for manufacturing a microdevice such as a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, or a micromachine, and an environmental chamber for the exposure apparatus.

半導体露光装置では精密な位置決めを行うため、温度安定性が100分の1度〜1000分の1度の高精度な温度管理を行っている。このような温度管理は、露光装置を囲うチャンバ内の空間に温調された気体を流すことによって行われる。また、装置が発生する熱を取り除くために、発熱源の近傍に局所的に気体または冷却液を流すことも行われる。
さらに、チャンバの内部と外部の温度に大きな差がある場合にはチャンバ外部から内部に流入する熱が大きいため、チャンバ壁にチャンバ内部と外部との間の熱の伝達を抑える断熱層を配置することがあった。
特開2003−178955号公報
In order to perform precise positioning in a semiconductor exposure apparatus, high-precision temperature management is performed with a temperature stability of 1 / 100th to 1 / 1000th. Such temperature management is performed by flowing a temperature-controlled gas into a space in a chamber surrounding the exposure apparatus. In addition, in order to remove the heat generated by the apparatus, a gas or a cooling liquid is locally passed in the vicinity of the heat generation source.
Furthermore, when there is a large difference between the temperature inside and outside the chamber, the heat flowing into the chamber from the outside is large, so a heat insulating layer that suppresses heat transfer between the chamber inside and outside is disposed on the chamber wall. There was a thing.
JP 2003-178955 A

上述のようにチャンバ壁に断熱層を設けた場合に、本発明者は以下の技術課題があることを見出した。それは、チャンバ壁に断熱層を設けるとチャンバ内壁面に熱が溜まってしまうということである。ここで、熱の発生源は、例えばチャンバ外部から少しずつ伝わってきた熱や、チャンバ内部の装置で発生した熱である。
上述の熱溜まりは、チャンバ内部の温度や装置の温度を不均一にする要因となりうるため好ましくない。本発明では、チャンバ壁に断熱層を設けた場合に、チャンバ壁内面の熱溜まりを低減することを目的としている。
When the heat insulation layer is provided on the chamber wall as described above, the present inventor has found that there are the following technical problems. That is, if a heat insulating layer is provided on the chamber wall, heat is accumulated on the inner wall surface of the chamber. Here, the heat generation source is, for example, heat transmitted from the outside of the chamber little by little, or heat generated by an apparatus inside the chamber.
The above-described heat accumulation is not preferable because it can cause the temperature inside the chamber and the temperature of the apparatus to be uneven. An object of the present invention is to reduce heat accumulation on the inner surface of the chamber wall when a heat insulating layer is provided on the chamber wall.

上記の課題を解決するため、本発明のチャンバは、露光装置の少なくとも一部を囲うチャンバであって、前記チャンバを構成する少なくとも1つの壁が、前記壁の内側と外側との間の熱の伝達を抑える断熱層と、前記壁の内壁面の温度を調整する温調手段とを備えることを特徴としている。   In order to solve the above-described problems, a chamber of the present invention is a chamber that surrounds at least a part of an exposure apparatus, and at least one wall that constitutes the chamber has heat between the inside and the outside of the wall. It is characterized by comprising a heat insulating layer for suppressing transmission and a temperature adjusting means for adjusting the temperature of the inner wall surface of the wall.

本発明によれば、チャンバ壁に断熱層を設けた場合に、チャンバ内壁面の熱溜まりを低減することができる。また、本発明は断熱層が高い断熱効果を有するものほど顕著な効果を奏する。なぜなら、チャンバ内壁面に溜まった熱が外部に逃げにくくなるためである。また、本発明はチャンバ内部を真空雰囲気にした場合に特に効果を奏する。なぜなら、チャンバ内部に熱を伝達する気体がないため熱が溜まりやすく、溜まった熱が不意に輻射熱によって装置に伝わり好ましくない影響を与えることがあるためである。   According to the present invention, when a heat insulating layer is provided on the chamber wall, heat accumulation on the inner wall surface of the chamber can be reduced. Moreover, this invention has a remarkable effect, so that a heat insulation layer has a high heat insulation effect. This is because the heat accumulated on the inner wall surface of the chamber is difficult to escape to the outside. The present invention is particularly effective when the inside of the chamber is in a vacuum atmosphere. This is because there is no gas that transmits heat inside the chamber, so that heat tends to accumulate, and the accumulated heat is unexpectedly transmitted to the apparatus by radiant heat and may have an undesirable effect.

以下、本発明の実施態様を列挙する。
[実施態様1] 露光装置の少なくとも一部を囲う環境チャンバであって、該チャンバの壁面構造の一番外側を断熱層で構成し外気の影響を遮断しつつチャンバ壁面内側は流体層を構成して流体によってチャンバ壁面温度を一定に保つように温度調節機能を持つことを特徴とする露光装置用チャンバ。
[実施態様2] 露光装置の少なくとも一部を囲う環境チャンバであって、該チャンバの壁面構造の一番外側を真空断熱層で構成し外気の影響を遮断しつつチャンバ壁面内側は流体層を構成して流体によってチャンバ壁面温度を一定に保つように温度調節機能を持つことを特徴とする露光装置用チャンバ。
The embodiments of the present invention are listed below.
[Embodiment 1] An environmental chamber surrounding at least a part of an exposure apparatus, wherein the outermost wall surface structure of the chamber is formed of a heat insulating layer to block the influence of outside air, while the inner wall surface of the chamber forms a fluid layer. An exposure apparatus chamber having a temperature adjusting function so as to keep the chamber wall surface temperature constant by a fluid.
[Embodiment 2] An environmental chamber surrounding at least a part of an exposure apparatus, wherein the outermost wall surface structure of the chamber is formed of a vacuum heat insulating layer to block the influence of outside air, and the inner wall surface of the chamber forms a fluid layer. An exposure apparatus chamber having a temperature adjusting function so as to keep the chamber wall surface temperature constant by a fluid.

[実施態様3] 実施態様1または実施態様2に記載の露光装置用チャンバであり前記真空断熱層は真空断熱材を用いたことを特徴とする露光装置用チャンバ。
[実施態様4] 実施態様1または実施態様2に記載の露光装置用チャンバであり前記流体は空気であることを特徴とする露光装置用チャンバ。
[実施態様5] 実施態様1または実施態様2に記載の露光装置用チャンバであり前記流体は液体であることを特徴とする露光装置用チャンバ。
[実施態様6] 実施態様1または実施態様2に記載の露光装置用チャンバであり前記チャンバの最外面とは側面、天井、床面のいずれかまたは全てを含む構成であることを特徴とする露光装置用チャンバ。
[Embodiment 3] An exposure apparatus chamber according to Embodiment 1 or Embodiment 2, wherein the vacuum heat insulating layer uses a vacuum heat insulating material.
[Embodiment 4] An exposure apparatus chamber according to Embodiment 1 or Embodiment 2, wherein the fluid is air.
[Embodiment 5] An exposure apparatus chamber according to Embodiment 1 or Embodiment 2, wherein the fluid is a liquid.
[Embodiment 6] The exposure apparatus chamber according to Embodiment 1 or Embodiment 2, wherein the outermost surface of the chamber includes any one or all of a side surface, a ceiling, and a floor surface. Device chamber.

上記実施態様1または実施態様2の構成によれば、露光装置の少なくとも一部を囲う環境チャンバにおいて、チャンバ内空間が密閉状態や真空の場合でもチャンバ外壁部の断熱層や真空断熱層により効率よく外気の影響を緩和し、かつチャンバ内発生の熱変動はチャンバ内壁面の流体層で高精度に温度制御することができる。
上記実施態様3の構成によれば、実施態様1または実施態様2のチャンバにおいて断熱性能を保ったまま精密温度制御チャンバの壁面構造を簡易に構成することが可能となる。
加えて上記実施態様4の構成によれば、実施態様1または実施態様2のチャンバにおいて流体層を軽くでき壁面の強度を下げチャンバを安く軽く作ることができる。
あるいは上記実施態様5の構成によれば、実施態様1または実施態様2のチャンバにおいて高精度な精密温調制御チャンバを構成することができる。
加えて上記実施態様6の構成によれば、実施態様1または実施態様2のチャンバにおいて外気だけでなく床面の温度変化の影響を防ぐことができる。
According to the configuration of the first embodiment or the second embodiment, in the environmental chamber that surrounds at least a part of the exposure apparatus, the heat insulating layer or the vacuum heat insulating layer on the outer wall of the chamber is more efficient even when the chamber inner space is sealed or vacuum. The influence of outside air can be mitigated, and the heat fluctuation generated in the chamber can be controlled with high accuracy by the fluid layer on the inner wall surface of the chamber.
According to the configuration of the third embodiment, the wall surface structure of the precision temperature control chamber can be easily configured while maintaining the heat insulation performance in the chamber of the first or second embodiment.
In addition, according to the configuration of the fourth embodiment, the fluid layer can be lightened in the chamber of the first embodiment or the second embodiment, the strength of the wall surface can be lowered, and the chamber can be made cheaper and lighter.
Or according to the structure of the said Embodiment 5, the highly accurate precision temperature control chamber can be comprised in the chamber of Embodiment 1 or Embodiment 2. FIG.
In addition, according to the configuration of the sixth embodiment, it is possible to prevent the influence of the temperature change of the floor surface as well as the outside air in the chamber of the first or second embodiment.

すなわち、上記構成からなる露光装置用温調チャンバは、チャンバ内空間が密閉状態や真空の場合でもチャンバ外壁部の断熱層により効率よく外気の影響を緩和し、かつチャンバ内発生の熱変動はチャンバ内壁面の流体層で高精度に温度制御することで露光装置本体の温度を安定させることができる。   In other words, the temperature control chamber for an exposure apparatus having the above-described structure efficiently reduces the influence of the outside air by the heat insulating layer on the outer wall of the chamber even when the chamber inner space is sealed or vacuum, and the heat fluctuation generated in the chamber The temperature of the exposure apparatus main body can be stabilized by controlling the temperature with high accuracy using the fluid layer on the inner wall surface.

以下、本発明の実施例を図面を用いて説明する。尚、以下に説明する実施の形態は、本発明の実現手段としての一例であり、本発明が適用される装置の構成や各種条件によって適宜修正又は変更されるべきものである。   Embodiments of the present invention will be described below with reference to the drawings. The embodiment described below is an example as means for realizing the present invention, and should be appropriately modified or changed according to the configuration of the apparatus to which the present invention is applied and various conditions.

[第1の実施例]
図1は本発明による半導体露光装置用チャンバの概念図である。図1において、1は露光装置本体を囲い環境状態を制御するチャンバである。2はチャンバ1の壁面外層に設けられた断熱層である。チャンバ1の外気温がチャンバ1内部の制御温度に近くかつ変動が小さい場合、断熱層2には一般的な断熱材や真空断熱材を用いてもよい。断熱層2に一般的な断熱材や真空断熱材を用いるとチャンバ1壁面の構造を簡単に構成できる。3はチャンバ1の壁面内層に作られた流体層である。流体層3を満たす流体は温調媒体であり、気体では空気や窒素、液体では水、純水、フッ素系の化合液、アルコール系の化合液等が用いられる。温調媒体により流体層3の温度を一定温度に制御することでチャンバ1内の雰囲気温度を安定させることが出来る。なお、本実施例では温調手段として流体層を設けたがこれにかぎるものではない。
[First embodiment]
FIG. 1 is a conceptual view of a semiconductor exposure apparatus chamber according to the present invention. In FIG. 1, reference numeral 1 denotes a chamber that surrounds the exposure apparatus main body and controls the environmental state. Reference numeral 2 denotes a heat insulating layer provided on the outer wall surface of the chamber 1. When the outside air temperature of the chamber 1 is close to the control temperature inside the chamber 1 and the fluctuation is small, a general heat insulating material or a vacuum heat insulating material may be used for the heat insulating layer 2. When a general heat insulating material or a vacuum heat insulating material is used for the heat insulating layer 2, the structure of the wall surface of the chamber 1 can be easily configured. Reference numeral 3 denotes a fluid layer formed on the inner wall surface of the chamber 1. The fluid satisfying the fluid layer 3 is a temperature control medium, and air or nitrogen is used as a gas, and water, pure water, a fluorine-based compound liquid, an alcohol-based compound liquid, or the like is used as a liquid. The atmospheric temperature in the chamber 1 can be stabilized by controlling the temperature of the fluid layer 3 to a constant temperature using a temperature control medium. In this embodiment, a fluid layer is provided as a temperature control means, but this is not a limitation.

チャンバ1の壁面は適度な大きさに分割可能であってもよく、その場合には各部に最適な流体を使用できる。流体層3の構造は中空の層構造、または中空繊維質の物質で埋めた層構造、または壁面に流体の配管を一面に引き回した構造等、各部で最適な構造を用いる。前記流体層3の温調媒体が気体の場合には液体に比べ熱回収効率は低くなるがチャンバ1の壁面構造を軽くすることが可能である。特に気体が空気の場合には安全上の配慮も簡易で済むことからチャンバのコストを安く抑えることができる。前記流体層3の温調媒体が液体の場合には気体に比べ熱回収効率が高くより高精度な温度制御を行うことが可能となる。   The wall surface of the chamber 1 may be divided into an appropriate size, and in that case, an optimal fluid can be used for each part. As the structure of the fluid layer 3, an optimum structure is used in each part, such as a hollow layer structure, a layer structure filled with a hollow fiber material, or a structure in which a fluid pipe is drawn around a wall surface. When the temperature control medium of the fluid layer 3 is a gas, the heat recovery efficiency is lower than that of the liquid, but the wall surface structure of the chamber 1 can be lightened. In particular, when the gas is air, safety considerations can be simplified, so that the cost of the chamber can be reduced. When the temperature control medium of the fluid layer 3 is a liquid, the heat recovery efficiency is higher than that of a gas, and more accurate temperature control can be performed.

4は露光装置空間であり空気や窒素等の気体で充填されている。また流体層3と露光装置空間4の間に熱伝達係数の小さな素材、例えば銀や銅等の金属等21を用いた場合には露光装置空間4の温度分布をより均一にすることができる。また、チャンバ外部と露光装置空間4の温度差がより大きい場合や断熱層2を真空断熱材や真空層で構成しなかった場合には流体層3の内側にさらに流体層を構成し2重にすることで露光装置空間4の温度安定性を向上させることも可能である。   An exposure apparatus space 4 is filled with a gas such as air or nitrogen. Further, when a material having a small heat transfer coefficient, such as a metal 21 such as silver or copper, is used between the fluid layer 3 and the exposure apparatus space 4, the temperature distribution in the exposure apparatus space 4 can be made more uniform. Further, when the temperature difference between the outside of the chamber and the exposure apparatus space 4 is large, or when the heat insulating layer 2 is not composed of a vacuum heat insulating material or a vacuum layer, a fluid layer is further formed inside the fluid layer 3 to be doubled. By doing so, it is also possible to improve the temperature stability of the exposure apparatus space 4.

5は露光装置本体である。露光装置本体とは、露光装置を構成する投影レンズ、投影レンズを支持するための支持体、ウエハステージ、レチクルステージ等の少なくともいずれかであって、そのすべてを含んでもよい。6は露光装置の発熱部である。発熱部6は、例えばステージの駆動部や、装置の制御に用いる回路基板等である。7は流体層3へ流体を制御する流体層の温調部であり、流体を送り込むポンプまたはファンと流体を温調するヒータや冷凍機等の熱交換器と温度センサと制御部を持つ。8は流体層3へ温調された流体を供給する温調流体供給部、9は流体を回収する温調流体回収部である。10は露光装置の発熱部を個別に温調する個別温調部、11は個別温調部から温調媒体を供給する個別温調媒体供給部、12は個別温調媒体回収部である。13はチャンバ1のチャンバ機械室である。   Reference numeral 5 denotes an exposure apparatus main body. The exposure apparatus main body is at least one of a projection lens constituting the exposure apparatus, a support for supporting the projection lens, a wafer stage, a reticle stage, etc., and may include all of them. Reference numeral 6 denotes a heat generating portion of the exposure apparatus. The heat generating unit 6 is, for example, a stage driving unit or a circuit board used for controlling the apparatus. Reference numeral 7 denotes a fluid layer temperature control unit that controls the fluid to the fluid layer 3, and includes a pump or fan that feeds the fluid, a heat exchanger such as a heater or refrigerator that controls the temperature of the fluid, a temperature sensor, and a control unit. Reference numeral 8 denotes a temperature-controlled fluid supply unit that supplies the temperature-controlled fluid to the fluid layer 3, and 9 denotes a temperature-controlled fluid recovery unit that recovers the fluid. Reference numeral 10 denotes an individual temperature control unit that individually controls the temperature of the heat generating unit of the exposure apparatus, 11 denotes an individual temperature control medium supply unit that supplies a temperature control medium from the individual temperature control unit, and 12 denotes an individual temperature control medium recovery unit. Reference numeral 13 denotes a chamber machine room of the chamber 1.

断熱層2と流体層3を構成したチャンバ壁面は一般的にチャンバ機械室13側を除く3面であるが、クリーンルームの制御温度が露光装置内制御温度と異なっている場合等は天井面からの影響も大きいため、天井面を断熱層2と流体層3を組み合わせた構成にすることが効果的である。また、チャンバ機械室13も発熱体であるため、機械室側の壁面にも上記断熱層2と流体層3の組み合わせが有効となる。さらに露光装置の下面は温度制御されていないサブファブからの発熱の影響を受けるため、床面も上記断熱層2と流体層3の組み合わせた構成とすることで露光装置空間4および露光装置本体5の温度安定性を高めることが可能となる。露光装置空間4を囲む6面全てを断熱層2と流体層3による構成とすることも可能であるが、通常は熱影響の大きい面(少なくとも1面)に限定して上記断熱層2と流体層3の構成を適用する。   The wall surface of the chamber that constitutes the heat insulating layer 2 and the fluid layer 3 is generally three surfaces excluding the chamber machine room 13 side. However, when the control temperature of the clean room is different from the control temperature in the exposure apparatus, Since the influence is great, it is effective to make the ceiling surface a combination of the heat insulating layer 2 and the fluid layer 3. Since the chamber machine room 13 is also a heating element, the combination of the heat insulating layer 2 and the fluid layer 3 is effective also on the wall surface on the machine room side. Further, since the lower surface of the exposure apparatus is affected by heat generated from the sub-fabric whose temperature is not controlled, the floor surface is also configured by combining the heat insulating layer 2 and the fluid layer 3 so that the exposure apparatus space 4 and the exposure apparatus body 5 It becomes possible to improve temperature stability. Although all six surfaces surrounding the exposure apparatus space 4 can be constituted by the heat insulating layer 2 and the fluid layer 3, the heat insulating layer 2 and the fluid are usually limited to a surface (at least one surface) having a large heat effect. Layer 3 configuration is applied.

図2は露光装置空間が気体の場合の概略構成図である。図2において、図1と共通または対応する部材には図1と同じ符号またはそれにダッシュを付けた符号を付してある。図2において、14は温度センサであり、流体層3の温度を測定し温調部7で制御を行う。15は発熱部6もしくは発熱部6付近の温度管理が必要な対象部へ設置した温度センサである。露光装置の発熱部6で発生した熱の大半は個別温調され個別温調媒体回収部12を通して排熱される。発熱量が小さく外部への熱流出が充分に小さい発熱部6’の場合は、個別温調媒体のみによる熱回収のみを行うため、発熱部6’には温度センサを必要とせず、温調部10’で一定温度の温調媒体を供給し回収する。   FIG. 2 is a schematic block diagram when the exposure apparatus space is a gas. 2, members that are the same as or correspond to those in FIG. 1 are denoted by the same reference numerals as those in FIG. In FIG. 2, reference numeral 14 denotes a temperature sensor that measures the temperature of the fluid layer 3 and controls the temperature control unit 7. Reference numeral 15 denotes a temperature sensor installed in the heat generating part 6 or a target part requiring temperature management in the vicinity of the heat generating part 6. Most of the heat generated in the heating unit 6 of the exposure apparatus is individually temperature-controlled and exhausted through the individual temperature-control medium recovery unit 12. In the case of the heat generating part 6 ′ having a small heat generation amount and a sufficiently small heat flow to the outside, only the heat recovery by the individual temperature control medium is performed, so the temperature control part is not required for the heat generating part 6 ′. At 10 ′, a temperature control medium having a constant temperature is supplied and recovered.

16は露光空間温調部であり、露光装置空間4内部を満たしている気体の温度を一定に制御し気体用フィルタ18を通して露光装置5へ送り込む。17は個別空間温調部である。19は液冷の出来ない発熱部である。液冷の出来ない発熱部とは、例えば設計の都合により、冷却のための配管を設けることができないような部分である。20は気体回収部であり、個別空間温調部17で温度制御され気体用フィルタ18を通して発熱部19で発生した熱を奪いとった気体を回収する。
露光装置空間4が密閉されていない場合には場所毎に温調された気体を噴出して積極的に熱を回収することが出来る。しかし露光装置空間4が密閉空間の場合は圧力変動を露光に影響の無い範囲に抑えるために流速を上げることが難しくなる。そのため、露光空間温調部16で制御された温調気体だけでは露光装置本体5の各部の温度を均一にし難くなるので、露光装置空間4の温度安定性を高めるために流体層3による熱回収が効果的である。このように、チャンバを構成する少なくとも1つの壁が、チャンバ壁の内側と外側との間の熱の伝達を低減する断熱層と、前記壁の内壁面の温度を調整する温調手段とを備えることにより、チャンバ内壁面に溜まった熱の影響を低減することができる。
Reference numeral 16 denotes an exposure space temperature control unit, which controls the temperature of the gas filling the inside of the exposure apparatus space 4 to be constant and sends it to the exposure apparatus 5 through the gas filter 18. Reference numeral 17 denotes an individual space temperature control unit. Reference numeral 19 denotes a heat generating portion that cannot be liquid-cooled. The heat generating part which cannot be liquid-cooled is a part where piping for cooling cannot be provided, for example, for convenience of design. Reference numeral 20 denotes a gas recovery unit that recovers the gas that has been temperature-controlled by the individual space temperature control unit 17 and has taken away the heat generated in the heat generation unit 19 through the gas filter 18.
When the exposure apparatus space 4 is not sealed, heat can be positively recovered by ejecting a temperature-controlled gas at each location. However, when the exposure apparatus space 4 is a sealed space, it is difficult to increase the flow rate in order to suppress the pressure fluctuation to a range that does not affect the exposure. Therefore, it is difficult to make the temperature of each part of the exposure apparatus main body 5 uniform with only the temperature control gas controlled by the exposure space temperature control unit 16, so that heat recovery by the fluid layer 3 is performed in order to improve the temperature stability of the exposure apparatus space 4. Is effective. In this way, at least one wall constituting the chamber includes a heat insulating layer that reduces heat transfer between the inside and outside of the chamber wall, and temperature adjusting means that adjusts the temperature of the inner wall surface of the wall. Thus, the influence of heat accumulated on the inner wall surface of the chamber can be reduced.

[第2の実施例]
図3は露光装置空間が真空である場合の概略構成図である。図3において、図1と共通または対応する部材には図1と同じ符号またはそれにダッシュを付けた符号を付してある。図3において、4は露光装置空間であり真空である。露光装置空間4が真空の場合、露光装置本体5を構成する各ユニットの配置や構造を十分に考慮し発熱は全て発熱部6や6’のように個別温調媒体により温度制御される必要がある。しかしながら内部に発生した熱が伝導や輻射により各部に温度むらを生じさせることがあるため、流体層3を利用した輻射熱の熱回収または流体層3からの輻射による熱供給で露光装置5の温度を安定させる。このように、チャンバを構成する少なくとも1つの壁が、チャンバ壁の内側と外側との間の熱の伝達を低減する断熱層と、前記壁の内壁面の温度を調整する温調手段とを備えることにより、チャンバ内壁面に溜まった熱の影響を低減することができる。
[Second Embodiment]
FIG. 3 is a schematic block diagram when the exposure apparatus space is a vacuum. 3, members that are the same as or correspond to those in FIG. 1 are denoted by the same reference numerals as those in FIG. In FIG. 3, reference numeral 4 denotes an exposure apparatus space, which is a vacuum. When the exposure apparatus space 4 is a vacuum, it is necessary to fully control the arrangement and structure of each unit constituting the exposure apparatus main body 5 and to control all the heat generation by an individual temperature control medium such as the heat generating parts 6 and 6 '. is there. However, since the heat generated inside may cause temperature unevenness in each part due to conduction or radiation, the temperature of the exposure apparatus 5 is adjusted by heat recovery of radiant heat using the fluid layer 3 or heat supply by radiation from the fluid layer 3. Stabilize. In this way, at least one wall constituting the chamber includes a heat insulating layer that reduces heat transfer between the inside and outside of the chamber wall, and temperature adjusting means that adjusts the temperature of the inner wall surface of the wall. Thus, the influence of heat accumulated on the inner wall surface of the chamber can be reduced.

[第3の実施例]
次に、この露光装置を利用した微小デバイス(ICやLSI等の半導体チップ、液晶パネル、CCD、薄膜磁気ヘッド、マイクロマシン等)の製造プロセスを説明する。
図4は半導体デバイスの製造のフローを示す。
ステップ1(回路設計)では半導体デバイスの回路設計を行う。ステップ2(マスク製作)では設計したパターンを形成したマスクを製作する。
一方、ステップ3(ウエハ製造)ではシリコン等の材料を用いてウエハを製造する。ステップ4(ウエハプロセス)は前工程と呼ばれ、上記用意したマスクを設置した露光装置とウエハを用いて、リソグラフィ技術によってウエハ上に実際の回路を形成する。
次のステップ5(組み立て)は後工程と呼ばれ、ステップ4によって作製されたウエハを用いて半導体チップ化する工程であり、アッセンブリ工程(ダイシング、ボンディング)、パッケージング工程(チップ封入)等の組み立て工程を含む。ステップ6(検査)ではステップ5で作製された半導体デバイスの動作確認テスト、耐久性テスト等の検査を行う。こうした工程を経て半導体デバイスが完成し、ステップ7でこれを出荷する。
[Third embodiment]
Next, a manufacturing process of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.) using this exposure apparatus will be described.
FIG. 4 shows a flow of manufacturing a semiconductor device.
In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask production), a mask on which the designed pattern is formed is produced.
On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus provided with the prepared mask.
The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes, and is shipped in Step 7.

上記ステップ4のウエハプロセスは以下のステップを有する。ウエハの表面を酸化させる酸化ステップ、ウエハ表面に絶縁膜を成膜するCVDステップ、ウエハ上に電極を蒸着によって形成する電極形成ステップ、ウエハにイオンを打ち込むイオン打ち込みステップ、ウエハに感光剤を塗布するレジスト処理ステップ、上記の露光装置によって回路パターンをレジスト処理ステップ後のウエハに焼付露光する露光ステップ、露光ステップで露光したウエハを現像する現像ステップ、現像ステップで現像したレジスト像以外の部分を削り取るエッチングステップ、エッチングが済んで不要となったレジストを取り除くレジスト剥離ステップ。これらのステップを繰り返し行うことによって、ウエハ上に多重に回路パターンを形成する。   The wafer process in step 4 includes the following steps. An oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, an electrode formation step for forming electrodes on the wafer by vapor deposition, an ion implantation step for implanting ions on the wafer, and applying a photosensitive agent to the wafer The resist processing step, the exposure step for printing and exposing the circuit pattern onto the wafer after the resist processing step by the above-described exposure apparatus, the development step for developing the wafer exposed in the exposure step, and the etching for removing portions other than the resist image developed in the development step Step, resist stripping step to remove resist that is no longer needed after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

本発明に係る半導体露光装置の概略構成図である。1 is a schematic block diagram of a semiconductor exposure apparatus according to the present invention. 図1における露光装置空間が気体である場合の実施例を示す概略構成図である。It is a schematic block diagram which shows the Example when the exposure apparatus space in FIG. 1 is gas. 図1における露光装置空間が真空である場合の実施例を示す概略構成図である。It is a schematic block diagram which shows the Example when the exposure apparatus space in FIG. 1 is a vacuum. デバイスの製造プロセスのフローを説明する図である。It is a figure explaining the flow of the manufacturing process of a device.

符号の説明Explanation of symbols

1:チャンバ
2:断熱層
3:流体層
4:露光装置空間
5:露光装置本体
6:発熱部
6’:発熱部
7:流体層の温調部
8:温調流体供給部
9:温調流体回収部
10:個別温調部
10’:個別温調部
11:個別温調媒体供給部
12:個別温調媒体回収部
13:チャンバ機械室
14:温度センサ
15:温度センサ
16:露光空間温調部
17:個別空間温調部
18:気体用フィルタ
19:液冷の出来ない発熱部
20:気体回収部
21:金属等(流体層と露光装置空間との間の層)
1: Chamber 2: Thermal insulation layer 3: Fluid layer 4: Exposure apparatus space 5: Exposure apparatus body 6: Heat generation part 6 ': Heat generation part 7: Temperature control part 8 of fluid layer: Temperature control fluid supply part 9: Temperature control fluid Recovery unit 10: Individual temperature control unit 10 ': Individual temperature control unit 11: Individual temperature control medium supply unit 12: Individual temperature control medium recovery unit 13: Chamber machine room 14: Temperature sensor 15: Temperature sensor 16: Exposure space temperature control Unit 17: Individual space temperature control unit 18: Gas filter 19: Heat generation unit 20 that cannot be liquid-cooled: Gas recovery unit 21: Metal or the like (layer between the fluid layer and the exposure apparatus space)

Claims (10)

露光装置の少なくとも一部を囲うチャンバであって、
前記チャンバを構成する少なくとも1つの壁が、前記壁の内側と外側との間の熱の伝達を低減する断熱層と、前記壁の内壁面の温度を調整する温調手段とを備えることを特徴とするチャンバ。
A chamber surrounding at least a portion of the exposure apparatus,
At least one wall constituting the chamber includes a heat insulating layer for reducing heat transfer between the inside and the outside of the wall, and a temperature adjusting means for adjusting the temperature of the inner wall surface of the wall. A chamber.
前記温調手段は、前記断熱層よりも前記壁の内壁面側に設けられることを特徴とする請求項1に記載のチャンバ。   The chamber according to claim 1, wherein the temperature adjusting means is provided closer to the inner wall surface of the wall than the heat insulating layer. 前記断熱層は、真空断熱層であることを特徴とする請求項1または2に記載のチャンバ。   The chamber according to claim 1, wherein the heat insulating layer is a vacuum heat insulating layer. 前記温調手段は、前記壁の内部に配置された配管に温調された流体を供給および回収することによって前記壁の内壁面の温度を調整することを特徴とする請求項1〜3のいずれか1つに記載のチャンバ。   The said temperature control means adjusts the temperature of the inner wall surface of the said wall by supplying and collect | recovering the temperature-controlled fluid to piping arrange | positioned inside the said wall, The any one of Claims 1-3 characterized by the above-mentioned. The chamber according to any one of the above. 前記流体は、気体であることを特徴とする請求項4に記載のチャンバ。   The chamber according to claim 4, wherein the fluid is a gas. 前記流体は、液体であることを特徴とする請求項4に記載のチャンバ。   The chamber according to claim 4, wherein the fluid is a liquid. 前記壁は、前記チャンバの側面、天井、床面の少なくともいずれかを含むことを特徴とする請求項1〜6のいずれか1つに記載のチャンバ。   The chamber according to any one of claims 1 to 6, wherein the wall includes at least one of a side surface, a ceiling, and a floor surface of the chamber. 前記チャンバ内部が真空雰囲気であることを特徴とする請求項1〜7のいずれか1つに記載のチャンバ。   The chamber according to claim 1, wherein the inside of the chamber is a vacuum atmosphere. 露光装置であって、前記露光装置の少なくとも一部が請求項1〜8のいずれか1つに記載のチャンバ内に配置されることを特徴とする露光装置。   An exposure apparatus, wherein at least a part of the exposure apparatus is disposed in the chamber according to any one of claims 1 to 8. 請求項9に記載の露光装置を用いて基板を露光する工程と、露光した前記基板を現像する工程とを有することを特徴とするデバイス製造方法。   A device manufacturing method comprising: exposing a substrate using the exposure apparatus according to claim 9; and developing the exposed substrate.
JP2005074554A 2005-03-16 2005-03-16 Chamber and exposure system using the same Pending JP2006261273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005074554A JP2006261273A (en) 2005-03-16 2005-03-16 Chamber and exposure system using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005074554A JP2006261273A (en) 2005-03-16 2005-03-16 Chamber and exposure system using the same

Publications (1)

Publication Number Publication Date
JP2006261273A true JP2006261273A (en) 2006-09-28

Family

ID=37100199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005074554A Pending JP2006261273A (en) 2005-03-16 2005-03-16 Chamber and exposure system using the same

Country Status (1)

Country Link
JP (1) JP2006261273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009273399A (en) * 2008-05-14 2009-11-26 Asahikawa Poultry Kk Culture apparatus and culture method
KR200459210Y1 (en) * 2009-10-29 2012-03-22 주식회사 테라세미콘 Chamber For Batch Type Substrate Treatment Apparatus
WO2015165639A1 (en) * 2014-04-30 2015-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199814A (en) * 1989-01-30 1990-08-08 Nikon Corp Projection aligner
JPH09270384A (en) * 1996-03-29 1997-10-14 Nikon Corp Temperature control device and exposure device
JPH09320927A (en) * 1996-05-27 1997-12-12 Nikon Corp Projection aligner
JPH10209040A (en) * 1996-11-25 1998-08-07 Nikon Corp Aligner
JPH11329951A (en) * 1998-05-15 1999-11-30 Canon Inc Light source device and aligner
JP2000306826A (en) * 1999-02-15 2000-11-02 Nikon Corp Aligner, method of exposure and optical device
JP2001023890A (en) * 1999-07-09 2001-01-26 Canon Inc Aligner and manufacture of device using the same
JP2002217093A (en) * 2001-01-23 2002-08-02 Canon Inc System for producing semiconductor
JP2003178955A (en) * 2001-12-12 2003-06-27 Canon Inc Temperature control of semiconductor exposure system
JP2004039696A (en) * 2002-06-28 2004-02-05 Canon Inc Reflection mirror device, aligner, and method for manufacturing device
JP2004304145A (en) * 2003-03-19 2004-10-28 Nikon Corp Exposure apparatus

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199814A (en) * 1989-01-30 1990-08-08 Nikon Corp Projection aligner
JPH09270384A (en) * 1996-03-29 1997-10-14 Nikon Corp Temperature control device and exposure device
JPH09320927A (en) * 1996-05-27 1997-12-12 Nikon Corp Projection aligner
JPH10209040A (en) * 1996-11-25 1998-08-07 Nikon Corp Aligner
JPH11329951A (en) * 1998-05-15 1999-11-30 Canon Inc Light source device and aligner
JP2000306826A (en) * 1999-02-15 2000-11-02 Nikon Corp Aligner, method of exposure and optical device
JP2001023890A (en) * 1999-07-09 2001-01-26 Canon Inc Aligner and manufacture of device using the same
JP2002217093A (en) * 2001-01-23 2002-08-02 Canon Inc System for producing semiconductor
JP2003178955A (en) * 2001-12-12 2003-06-27 Canon Inc Temperature control of semiconductor exposure system
JP2004039696A (en) * 2002-06-28 2004-02-05 Canon Inc Reflection mirror device, aligner, and method for manufacturing device
JP2004304145A (en) * 2003-03-19 2004-10-28 Nikon Corp Exposure apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009273399A (en) * 2008-05-14 2009-11-26 Asahikawa Poultry Kk Culture apparatus and culture method
KR200459210Y1 (en) * 2009-10-29 2012-03-22 주식회사 테라세미콘 Chamber For Batch Type Substrate Treatment Apparatus
WO2015165639A1 (en) * 2014-04-30 2015-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20160136440A (en) * 2014-04-30 2016-11-29 에이에스엠엘 네델란즈 비.브이. Lithographic apparatus and device manufacturing method
CN106415395A (en) * 2014-04-30 2017-02-15 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method
JP2017515142A (en) * 2014-04-30 2017-06-08 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
US9921497B2 (en) 2014-04-30 2018-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101893450B1 (en) * 2014-04-30 2018-08-30 에이에스엠엘 네델란즈 비.브이. Lithographic apparatus and device manufacturing method

Similar Documents

Publication Publication Date Title
JP4429023B2 (en) Exposure apparatus and device manufacturing method
JP3814598B2 (en) Temperature adjustment apparatus, exposure apparatus, and device manufacturing method
KR102003416B1 (en) Support apparatus, lithographic apparatus and device manufacturing method
US10191395B2 (en) Thermal conditioning unit, lithographic apparatus and device manufacturing method
JP2006287014A (en) Positioning apparatus and linear motor
US8451423B2 (en) Lithographic apparatus and method
KR101280399B1 (en) Lithographic apparatus and lithographic apparatus cooling method
US20100073649A1 (en) Exposure Apparatus Having An Element To Be Cooled
US20070273861A1 (en) Stage device, exposure apparatus, and microdevice manufacturing method
JP2005322907A (en) Lithography apparatus, heat-adjusting system, and device manufacturing method
US9041904B2 (en) High heat load optics with a liquid metal interface for use in an extreme ultraviolet lithography system
JP2006261273A (en) Chamber and exposure system using the same
JP2006295146A (en) Positioning device, aligner, and device manufacturing method
WO2012067239A1 (en) Member for mounting and temperature controlled mounting device
JP2006216866A (en) Positioning device, exposure device and manufacturing method using it
JP2009170793A (en) Temperature regulator, optical system, lithographic exposure apparatus, and method of manufacturing device
JP2010034605A (en) Aligner, and method of manufacturing device
JPH10209036A (en) Method and apparatus for exposure
JP2001218424A (en) Fluid bearing motor
JP2001023890A (en) Aligner and manufacture of device using the same
JP2009170721A (en) Electrostatic chuck, mask holding device, substrate retaining device, exposure tool and method for manufacturing device
JP2011029511A (en) Optical system, exposure device and method of manufacturing device
JP2008124174A (en) Aligner and process for fabricating semiconductor element or liquid crystal element employing it
JP2011155230A (en) Substrate processing apparatus, temperature control method of substrate processing apparatus, and method of manufacturing device
JPH10209033A (en) Apparatus for position stage and aligner using the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080304

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20080304

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20090406

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100201

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100625

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100629

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20100630

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101026