JPH0294039A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPH0294039A JPH0294039A JP63243804A JP24380488A JPH0294039A JP H0294039 A JPH0294039 A JP H0294039A JP 63243804 A JP63243804 A JP 63243804A JP 24380488 A JP24380488 A JP 24380488A JP H0294039 A JPH0294039 A JP H0294039A
- Authority
- JP
- Japan
- Prior art keywords
- recording layer
- crystallized
- film
- information
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 29
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000002425 crystallisation Methods 0.000 abstract description 12
- 230000008025 crystallization Effects 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 38
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 229920005668 polycarbonate resin Polymers 0.000 description 5
- 239000004431 polycarbonate resin Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910005900 GeTe Inorganic materials 0.000 description 1
- -1 SiN and AIN Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、光ビームの照射により記録層の原子配列に変
化を起こさせて情報を記録する情報記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an information recording medium in which information is recorded by causing a change in the atomic arrangement of a recording layer by irradiation with a light beam.
（従来の技術）
近年、大量の情報記録媒体として光ディスクが注目をあ
びている。このうち１回のみの記録が可能な追記型の光
ディスクとしては、レーザビームの照射によって記録膜
に穴をあける方式のもの及び記録膜に隆起部分（バブル
）を形成する方式のもの等があり既に電子式文書ファイ
ル、コンピュータ用データファイル等で実用化されてい
る。(Prior Art) In recent years, optical discs have been attracting attention as a medium for recording large amounts of information. Among these, write-once optical discs that can be recorded only once include those that use laser beam irradiation to make holes in the recording film, and those that form raised portions (bubbles) on the recording film. It has been put to practical use in electronic document files, computer data files, etc.
一方、−度記録した情報を消去して再度記録が可能ない
わゆる書換形光ディスクの開発も行なわれ一部実用化の
方向にある。このような書換形光ディスクとしては、垂
直磁化膜のスピンの方向を磁場とレーザ光照射条件とで
選択的に変化させる光磁気形ディスクとレーザ光照射条
件によって記録膜の原子配列に変化を起こさせる相変化
型の光ディスクとがある。On the other hand, so-called rewritable optical discs have been developed and are on the verge of being put into practical use, in which previously recorded information can be erased and re-recorded. Such rewritable optical disks include magneto-optical disks that selectively change the spin direction of a perpendicularly magnetized film depending on the magnetic field and laser beam irradiation conditions, and magneto-optical disks that change the atomic arrangement of the recording layer depending on the laser beam irradiation conditions. There is also a phase change type optical disc.
この相変化型記録媒体としては、ガラスやプラスチック
からなる基板上にＧｅＴｅ、ＧｅＴｅＳｂ、ＧｅＴｅ１
ｎ、ＩｎＳｅ、５ｂＳｅ等の半導体や半導体化合物又は
金属間化合物等からなる記録層を積層したものが知られ
ている。この相変化型の記録媒体に情報を記録する際に
は、まず記録媒体の記録層に光ビームを全面照射して結
晶性の高い状態（以下結晶化状態とする）とする。次に
短いパルス幅の強いレーザ光を照射して加熱した後、急
冷して結晶性の搗い状態（以下非晶質状イ（ト。This phase change recording medium uses GeTe, GeTeSb, GeTe1, etc. on a substrate made of glass or plastic.
A stacked recording layer made of a semiconductor such as n, InSe, or 5bSe, a semiconductor compound, or an intermetallic compound is known. When recording information on this phase-change recording medium, first, the entire recording layer of the recording medium is irradiated with a light beam to bring it into a highly crystalline state (hereinafter referred to as a crystallized state). Next, it is heated by irradiation with a strong laser beam with a short pulse width, and then rapidly cooled to a crystalline state (hereinafter referred to as amorphous state).
態とする）とする。１度記録された情報を消去する際に
は、長いパルス幅の弱いレーザ光を照射し、加熱した後
除冷して元の結晶化状態とする。そして結晶化状態と非
晶質状態との光学的特性の違いを検出することにより情
報を再生している。ところがこのような情報記録媒体に
おいては、記録された情報を消去する際に結晶化の速度
が遅いため、情報の消去か高度になされないという不具
合があ達
った。). When erasing information that has been recorded once, the material is irradiated with a weak laser beam with a long pulse width, heated, and then slowly cooled to return to its original crystallized state. Information is then reproduced by detecting the difference in optical properties between the crystallized state and the amorphous state. However, in such information recording media, when erasing recorded information, the speed of crystallization is slow, resulting in a problem that the information cannot be erased to a high degree.
（発明が解決しようとする課題）
以−］二、詳述したように、従来の相変化型の情報記録
媒体においては、記録された情報を消去する際に結晶化
に時間を要するため、情報の消去か高速に行なえないと
いう不具合があった。そこで本発明では、記録層の片面
あるいは両面に記録層を構成する材料より融点の高い結
晶化した薄膜を設けることにより、記録層の結晶化の速
度を速めることを目的とした。(Problems to be Solved by the Invention) Second, as described in detail, in conventional phase-change information recording media, it takes time for crystallization to erase the recorded information, so the information There was a problem that the data could not be erased quickly. Therefore, the present invention aims to increase the speed of crystallization of the recording layer by providing a crystallized thin film having a higher melting point than the material constituting the recording layer on one or both sides of the recording layer.
（課題を解決するための手段）
本発明では、記録層の片面あるいは両面に記録層を構成
する材料より融点の高い材料からなる結晶化した薄膜を
設けた。前記結晶化した薄膜を構成する材料としては、
Ｔｉ、Ｃｒ、Ｎｉ、Ｍｎ。(Means for Solving the Problems) In the present invention, a crystallized thin film made of a material having a higher melting point than the material constituting the recording layer is provided on one or both sides of the recording layer. The materials constituting the crystallized thin film include:
Ti, Cr, Ni, Mn.
Ｆｅ、Ｃｏ、Ｃｕ、Ｍｏ、Ｒｈ、Ｐｄ、Ａｇ、ＷＩｒ、
Ｐｔ、Ａｕ、Ｂｅ、Ｂ、Ｃから選ばれる少なくとも１種
以上の合金薄膜か用いられる。Fe, Co, Cu, Mo, Rh, Pd, Ag, WIr,
At least one alloy thin film selected from Pt, Au, Be, B, and C is used.
（作用）
記録層の結晶化過程は、結晶核発生過程と結晶成長過程
とからなる。記録層の片面あるいは両面に結晶化した薄
膜を設けることにより、記録層と結晶化膜との接してい
る面で結晶化膜の結晶が記録層の結晶核発生の核となり
、記録層か結晶化するときの結晶核発生の頻度か高くな
る。(Operation) The crystallization process of the recording layer consists of a crystal nucleation process and a crystal growth process. By providing a crystallized thin film on one or both sides of the recording layer, on the surface where the recording layer and the crystallized film are in contact, the crystals of the crystallized film become the nucleus for the generation of crystal nuclei in the recording layer, causing the recording layer to crystallize. The frequency of crystal nucleation increases when
又、本発明で用いられる結晶化膜の材料は、記録層より
融点が高いため、レーザ光の照射によっても溶解非晶化
することがない。このため記録層の結晶化速度が高速化
され、情報の消去か高速で行なえる。Furthermore, since the material of the crystallized film used in the present invention has a higher melting point than the recording layer, it does not dissolve and become amorphous even when irradiated with laser light. Therefore, the crystallization speed of the recording layer is increased, and information can be erased at high speed.
（実施例）
以下図面を参照しながら本発明の実施例について説明す
る。(Example) Examples of the present invention will be described below with reference to the drawings.
まずスパッタリング法により情報記録媒体の試料Ａ、試
料Ｂ、試料Ｃの３種類の試料を製造した。試料Ａ及び試
料Ｂは本発明による情報記録媒体であり、第１図に示す
ような断面構造を有する。First, three types of samples of information recording media, sample A, sample B, and sample C, were manufactured by sputtering method. Sample A and sample B are information recording media according to the present invention, and have cross-sectional structures as shown in FIG.
即ち、試料Ａはポリカーボネイト樹脂よりなる。That is, sample A is made of polycarbonate resin.
膜厚１１００ｎの基板１上に、Ｉｎ５ｂＴｅよりなる膜
厚１１００ｎの記録層２と、Ｔｉよりなる膜厚１１００
ｎの結晶化した薄膜３とが順次積層された構造を有する
。試料Ｂは、ポリカーボネイト樹脂よりなる膜厚１１０
０ｎの基板１」二にＩｎ５ｂＴｅよりなる膜厚１１００
ｎの記録層２と、ｐｔよりなる膜厚１００ｒ＋ｎ＋の結
晶化した薄膜３とが順次積層された構造を有する。試料
Ｃは従来例であり、ポリカーボネイト樹脂よりなる膜厚
１１００ｎの基板上に、Ｉｎ５ｂＴｅよりなる膜厚１１
００ｎの記録層を積層した構造を有する。On a substrate 1 with a thickness of 1100 nm, a recording layer 2 with a thickness of 1100 nm made of In5bTe and a recording layer 2 with a thickness of 1100 nm made of Ti.
It has a structure in which n crystallized thin films 3 are sequentially laminated. Sample B is made of polycarbonate resin and has a film thickness of 110 mm.
A film thickness of 1100 nm made of In5bTe on a substrate of 0n
It has a structure in which an n recording layer 2 and a crystallized thin film 3 made of PT and having a film thickness of 100r+n+ are sequentially laminated. Sample C is a conventional example, in which a film made of In5bTe with a thickness of 11 nm is placed on a substrate made of polycarbonate resin with a film thickness of 1100 nm.
It has a structure in which 00n recording layers are stacked.
これらの情報記録媒体を以下に説明するスパツタリング
法により製造した。These information recording media were manufactured by the sputtering method described below.
まず第２図にそって、本実施例で用いられるスパッタリ
ング装置の構造について説明する。First, the structure of the sputtering apparatus used in this embodiment will be explained with reference to FIG.
真空容器４は排出ポート５を介して排気装置６に接続さ
れており、また、ガス導入ポート７を介してアルゴンガ
スボンベ８に接続されている。The vacuum container 4 is connected to an exhaust device 6 through an exhaust port 5, and is also connected to an argon gas cylinder 8 through a gas introduction port 7.
真空容器４中」二部には、支持装置９とこの支持装置９
に水平に支架された基板１か設けられており、基板１は
支持装置９を軸に回転することができる。The second part of the vacuum container 4 includes a support device 9 and a support device 9.
A horizontally supported substrate 1 is provided, and the substrate 1 can rotate around a support device 9.
また、真空容器４中底部には、基板１に対面してスパッ
タ源１０，１１．１２が設けられており、これらスパッ
タ源には高周波電源が接続されている。また、スパッタ
源１０，１１．１２の上方にはモニター装置１３，１４
．１５が設置されている。Furthermore, sputtering sources 10, 11, and 12 are provided at the bottom of the vacuum chamber 4, facing the substrate 1, and a high frequency power source is connected to these sputtering sources. Additionally, monitor devices 13 and 14 are provided above the sputter sources 10 and 11.12.
．． 15 have been installed.
上述のスパッタリング装置を用いて、まず試料Ｃを製造
した。First, sample C was manufactured using the above-mentioned sputtering apparatus.
スパッタ源１０，１１．１２として、Ｉｎ５ｂ及びＴｅ
を設置し、真空容器４内を５×１Ｏ−６Ｔｏｒｒまで排
気した。次にＡｒガスを導入し５Ｘ１０−３Ｔｏｒｒに
全体の圧力を調節した。基板として充分洗浄した外径１
３０ ｍｍ、板厚１１００ｎの円板状ポリカーボネート
基板を用い、この基板を６ Ｏｒｐｍで回転しつつモニ
タ装ｆ！１３．１４１５により各元素のスパッタ量を検
知して各スパッタ源に投入する電力を制御し、全体の膜
厚が１１００ｎになるまで各元素を堆積させて記録層を
成膜し、試料Ｃを得た。In5b and Te are used as sputtering sources 10, 11, 12.
was installed, and the inside of the vacuum container 4 was evacuated to 5×1 O −6 Torr. Next, Ar gas was introduced to adjust the overall pressure to 5×10 −3 Torr. Outer diameter 1 thoroughly cleaned as a substrate
A disk-shaped polycarbonate substrate with a thickness of 30 mm and a plate thickness of 1100 nm was used, and the monitor device f! was rotated at 6 Orpm. 13.1415 was used to detect the amount of sputtering of each element and control the power input to each sputtering source, depositing each element until the total film thickness was 1100 nm to form a recording layer, and sample C was obtained. Ta.
次に試料Ａの製造法を述べる。Next, the method for manufacturing sample A will be described.
支持装置９に試料Ｃと同様の方法で得たポリカーボネイ
ト樹脂よりなる基板上にＩｎ５ｂＴｅよりなる記録層を
積層したディスクを支架し、スパッタ源としてＴｉを設
置した。以下試料Ｃを製造した時と同様、排気装置６に
より真空容器内を５Ｘ１０ ６Ｔｏｒｒまで排気し、次
にアルゴンガスを導入して真空容器内を５Ｘ１０”Ｔｏ
ｒｒに調節した。ディスクを６０ ｒｐｍで回転しつつ
モニタ装置により、スパッタ量を調節しつつＴ１よりな
る薄膜をＩ ｎ５ｂＴｅ記録膜上に積層した。Ｔｉ膜の
膜厚が１００ｒ＋ｍになったところで成膜を止め試料Ａ
を得た。A disk in which a recording layer made of In5bTe was laminated on a substrate made of polycarbonate resin obtained in the same manner as Sample C was supported on the support device 9, and Ti was installed as a sputtering source. Below, in the same way as when producing sample C, the inside of the vacuum container was evacuated to 5X106 Torr using the exhaust device 6, and then argon gas was introduced to raise the inside of the vacuum container to 5X10''Torr.
Adjusted to rr. A thin film of T1 was laminated on the In5bTe recording film while the disk was rotating at 60 rpm and the amount of sputtering was adjusted using a monitor. When the thickness of the Ti film reached 100r+m, the film formation was stopped and Sample A
I got it.
試料Ｂは、支持装置９にポリカーボネイト樹脂基板上に
Ｉｎ５ｂＴｅ記録層を積層したディスクを支架し、スパ
ッタ源としてｐｔを設置し、試料Ａと同様の方法で製造
した。Sample B was manufactured in the same manner as Sample A, by supporting a disk in which an In5bTe recording layer was laminated on a polycarbonate resin substrate on a support device 9, and installing PT as a sputtering source.
以−にのようにして製造された試料Ａ、Ｂ、Ｃに対し、
基板側から、まず短い強いパルス光を照射して非晶質状
態とし、次に長い弱いパルス光を照射して記録層を結晶
化しその時の反射率の経時変化を測定した。第１図には
、横軸に時間軸、縦軸に反射率変化量をとり、試料Ａ、
Ｂ、Ｃに対する反射率の経時変化を示した。この第４図
から明らかなように、本発明による情報記録媒体である
試料Ａ、Ｂは従来の情報記録媒体であるＣに比べて、反
射率の変化が極めて短時間でおこる。これは、記録層と
結晶化薄膜の接しているところで、結晶化膜が結晶核発
生の核となり、記録層が結晶化するときの結晶核発生の
頻度が高くなり、記録層の結晶化が速められるためと思
われる。特に結晶化膜としてＴｉを用いた場合は、反射
率、熱導電性とも低いため、光ビームによる熱がＴｉ膜
に吸収されて特に記録層の結晶化を速める効果がある。For samples A, B, and C manufactured as described above,
From the substrate side, first a short, strong pulse of light was irradiated to make it into an amorphous state, and then a long, weak pulse of light was irradiated to crystallize the recording layer, and the change in reflectance over time at that time was measured. In Figure 1, the horizontal axis is the time axis, and the vertical axis is the amount of change in reflectance.
Changes in reflectance over time for B and C are shown. As is clear from FIG. 4, the reflectance of samples A and B, which are information recording media according to the present invention, change in a much shorter time than in sample C, which is a conventional information recording medium. This is because where the recording layer and the crystallized thin film are in contact, the crystallized film becomes a nucleus for crystal nucleation, and when the recording layer crystallizes, the frequency of crystal nucleation increases, causing the recording layer to crystallize faster. It seems that this is because they are being exposed. In particular, when Ti is used as the crystallization film, both the reflectance and thermal conductivity are low, so the heat from the light beam is absorbed by the Ti film, which has the effect of speeding up the crystallization of the recording layer in particular.
本実施例では、記録層の片面のみに結晶化膜を設けたが
、記録層の両面に結晶化膜を設けるとより結晶化を高速
化するのに有効である。In this example, the crystallized film was provided on only one side of the recording layer, but providing the crystallized film on both sides of the recording layer is effective in speeding up the crystallization.
又、本発明の情報記録媒体は、第４図及び第５図に示す
断面構造を有するものでもよい。Further, the information recording medium of the present invention may have the cross-sectional structure shown in FIGS. 4 and 5.
第４図の情報記録媒体は、基板１上に、無機物保護層１
６、記録層２、結晶化膜３、無機物保護層１６、有機物
保護層１７が順次積層された断面構造を有する。無機物
保護層１６は、Ｓｉｎ。The information recording medium shown in FIG. 4 has an inorganic protective layer 1 on a substrate 1.
6. It has a cross-sectional structure in which a recording layer 2, a crystallized film 3, an inorganic protective layer 16, and an organic protective layer 17 are sequentially laminated. The inorganic protective layer 16 is made of Sin.
ＳｉＯ、ＴｉＯ、Ｓｂ Ｏ、ＰｂＯ等酸化物、ＢｉＦ
、ＬｉＦ、ＰｂＦ 、ＭｇＦ 、ＢａＦ、Ｃａ
Ｆ、、等の弗化物、ＢＮ、Ｓｉ Ｎ 。Oxides such as SiO, TiO, SbO, PbO, BiF
, LiF, PbF, MgF, BaF, Ca
Fluorides such as F, BN, SiN.
ＳｉＮ、ＡＩＮ等の窒化物のいずれか１種又は２種から
選択された材料よりなり、記録層２の穴明きを防止する
目的で設けられている。有機物保護層１７は、紫外線硬
化樹脂からなり、取扱上の傷や埃を防止するために設置
される。It is made of a material selected from one or two nitrides such as SiN and AIN, and is provided for the purpose of preventing holes in the recording layer 2. The organic protection layer 17 is made of ultraviolet curing resin and is provided to prevent scratches and dust during handling.
第５図は更に、金属あるいは合金からなる反一 対膜１８を設けた情報記録媒体の例である。Figure 5 further shows that the This is an example of an information recording medium provided with a counter-film 18.
以上は情報の記録、消去が可能な情報記録媒体に結晶化
膜を設けた場合について述べたが、相変化を利用した１
回のみの記録が行なえる情報記録媒体にも応用すること
ができる。このような情報記録媒体では通常記録層全面
をまず非晶化状態とし、レーザ光照射によって記録層を
結晶化して情報を記録しているので、結晶化膜を記録層
の片面あるいは両面に設けることにより情報の記録が高
速化できる。The above describes the case where a crystallized film is provided on an information recording medium that can record and erase information.
It can also be applied to information recording media on which only one recording can be performed. In such information recording media, the entire surface of the recording layer is usually first made into an amorphous state, and then the recording layer is crystallized by laser beam irradiation to record information. Therefore, it is necessary to provide a crystallized film on one or both sides of the recording layer. This allows information to be recorded faster.
以上詳述したように、本発明の記録層の片面あるいは両
面に結晶化膜を設けた情報記録媒体によれば記録層の結
晶化を速め情報を高速に消去することができる。As described in detail above, according to the information recording medium of the present invention in which a crystallized film is provided on one or both sides of the recording layer, the crystallization of the recording layer is accelerated and information can be erased at high speed.
第１図は本発明の１実施例である情報記録媒体の断面構
造図、
第２図は、上記実施例で用いられた情報記録媒体の製造
のためのスパッタリング装置の概略構造図、第３図は、
上記実施例で製造された情報記録媒体及び従来の情報記
録媒体にレーザ光を照射した時の反射率変化量を示した
グラフ、
第４図及び第５図は本発明の他の実施例である情報記録
媒体の断面構造図である。
代理人弁理士 則 近 憲 佑
同 山 下
第
図
第
図
ペル又部 ［ｎ５ｅ（
〕
第
図FIG. 1 is a cross-sectional structural diagram of an information recording medium that is an embodiment of the present invention, FIG. 2 is a schematic structural diagram of a sputtering apparatus for manufacturing the information recording medium used in the above embodiment, and FIG. teeth,
Graphs 4 and 5 showing the amount of change in reflectance when the information recording medium manufactured in the above embodiment and the conventional information recording medium are irradiated with laser light are other embodiments of the present invention. FIG. 2 is a cross-sectional structural diagram of an information recording medium. Representative Patent Attorney Noriyuki Ken Yudo Yamashita Figure Permata Department [n5e ( ) Figure
Claims (1)
により、情報が記録される記録層を有する情報記録媒体
において、前記記録層の片面あるいは両面に前記記録層
より融点の高い結晶化した薄膜を設けたことを特徴とす
る情報記録媒体。In an information recording medium having a recording layer in which information is recorded by irradiating a light beam to cause a change in atomic arrangement, a crystallized thin film having a melting point higher than that of the recording layer is formed on one or both sides of the recording layer. An information recording medium characterized by being provided with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63243804A JPH0294039A (en) | 1988-09-30 | 1988-09-30 | Information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63243804A JPH0294039A (en) | 1988-09-30 | 1988-09-30 | Information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0294039A true JPH0294039A (en) | 1990-04-04 |
Family
ID=17109189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63243804A Pending JPH0294039A (en) | 1988-09-30 | 1988-09-30 | Information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0294039A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1039448A2 (en) * | 1999-03-26 | 2000-09-27 | Matsushita Electric Industrial Co., Ltd. | Phase change recording with crystallization improving layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6222249A (en) * | 1985-07-19 | 1987-01-30 | Matsushita Electric Ind Co Ltd | Optical recording carrier and its production |
| JPH0242654A (en) * | 1988-08-03 | 1990-02-13 | Fuji Electric Co Ltd | Optical recording medium |
-
1988
- 1988-09-30 JP JP63243804A patent/JPH0294039A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6222249A (en) * | 1985-07-19 | 1987-01-30 | Matsushita Electric Ind Co Ltd | Optical recording carrier and its production |
| JPH0242654A (en) * | 1988-08-03 | 1990-02-13 | Fuji Electric Co Ltd | Optical recording medium |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1039448A2 (en) * | 1999-03-26 | 2000-09-27 | Matsushita Electric Industrial Co., Ltd. | Phase change recording with crystallization improving layer |
| EP1039448A3 (en) * | 1999-03-26 | 2001-11-14 | Matsushita Electric Industrial Co., Ltd. | Phase change recording with crystallization improving layer |
| US6416837B1 (en) | 1999-03-26 | 2002-07-09 | Matsushita Electric Industrial Co., Ltd. | Information recording medium, a method for manufacturing the same and a method for recording/reproducing information thereon |
| EP1396853A2 (en) * | 1999-03-26 | 2004-03-10 | Matsushita Electric Industrial Co., Ltd. | Phase change recording with crystallization improving layer |
| EP1396853A3 (en) * | 1999-03-26 | 2004-03-17 | Matsushita Electric Industrial Co., Ltd. | Phase change recording with crystallization improving layer |
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