JPH0293059A - Thin film formation - Google Patents
Thin film formationInfo
- Publication number
- JPH0293059A JPH0293059A JP24537388A JP24537388A JPH0293059A JP H0293059 A JPH0293059 A JP H0293059A JP 24537388 A JP24537388 A JP 24537388A JP 24537388 A JP24537388 A JP 24537388A JP H0293059 A JPH0293059 A JP H0293059A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- high frequency
- frequency voltage
- discharge treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 54
- 230000015572 biosynthetic process Effects 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 208000028659 discharge Diseases 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000007733 ion plating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000005422 blasting Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920004738 ULTEM® Polymers 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は、薄膜形成方法に関し、さらに詳しくは、基板
上に該基板との密着性に優れた薄膜を形成しうるような
薄膜形成方法に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a thin film forming method, and more particularly to a thin film forming method capable of forming a thin film on a substrate with excellent adhesion to the substrate.
記録媒体あるいは半導体製造プロセスなどの分野におい
て、基板上へ薄膜を形成する必要性が高まっている。2. Description of the Related Art In fields such as recording media and semiconductor manufacturing processes, there is an increasing need to form thin films on substrates.
基板上へ薄膜を形成するための方法としては、従来、真
空蒸着法、イオンブレーティング法、スパッタ法などが
知られている。このうち真空蒸着法は、基板と蒸着薄膜
との密着強度が小さいという問題点があった。Conventionally known methods for forming a thin film on a substrate include vacuum evaporation, ion blasting, and sputtering. Among these methods, the vacuum deposition method has a problem in that the adhesion strength between the substrate and the deposited thin film is low.
このような真空蒸着法の問題点を解決して、基板との密
着性に優れた薄膜を得るため、基板に直流電圧を印加し
、１０ ”ｔｏｒｒ程度の真空度で放電を発生させて蒸
発粒子をイオン化させなから成膜を行なう直流イオンブ
レーティング法が開発されている。また蒸発源と基板と
の間に高周波電圧を印加したコイルを設け、蒸発粒子を
イオン化させなから成膜を行なう高周波イオンブレーテ
ィング法が開発されている。このような直流イオンブレ
ーティング法あるいは高周波イオンブレーティング法に
よれば、蒸発粒子はイオン化されているため、イオン化
されていない蒸発粒子よりも基板上へ強く衝突し、基板
に密着強度に優れた薄膜を形成することができる。In order to solve the problems of the vacuum evaporation method and obtain a thin film with excellent adhesion to the substrate, a DC voltage is applied to the substrate and a discharge is generated at a vacuum level of about 10" torr to remove the evaporated particles. A DC ion blating method has been developed that forms a film without ionizing the evaporated particles.Also, a coil to which a high frequency voltage is applied is installed between the evaporation source and the substrate, and a high frequency method that forms a film without ionizing the evaporated particles has been developed. Ion blating methods have been developed.According to such direct current ion brating methods or high frequency ion brating methods, since the evaporated particles are ionized, they collide more strongly with the substrate than non-ionized evaporated particles. However, a thin film with excellent adhesion strength can be formed on the substrate.
しかしながら、さらに基板との密着強度に優れた薄膜を
形成しうるような薄膜形成方法の出現が望まれていた。However, there has been a desire for a method for forming a thin film that can form a thin film with even better adhesion strength to a substrate.
なお、スパッタ法によれば、基板との密着性に優れた薄
膜を形成しうろことが知られているが、スパッタ法では
、真空蒸着法あるいはイオンブレーティング法と比較し
て成膜速度が小さいという問題点があった。Although sputtering is known to form a thin film with excellent adhesion to the substrate, sputtering has a lower deposition rate than vacuum evaporation or ion blating. There was a problem.
また基板と蒸着薄膜との密着性を高めるため、基板にコ
ロナ放電処理、グロー放電処理などの放電処理を施すこ
とも知られている。ところが従来公知の放電処理方法で
は、基板と蒸着薄膜との密着性は充分には改善されない
という問題点があった。また従来の放電処理方法は、基
板に直流電圧あるいは交流電圧を印加することにより行
なわれているため、放電処理を施す際の真空度は６Ｘ１
０−５〜５．５×１０−４ｔｏｒｒから１０−５〜５．
５×１０−４ｔｏｒｒ程度であり、このため放電処理と
成膜処理とを別々に行なわなければならないことがあっ
た。It is also known to subject the substrate to a discharge treatment such as a corona discharge treatment or a glow discharge treatment in order to improve the adhesion between the substrate and the deposited thin film. However, conventionally known discharge treatment methods have a problem in that the adhesion between the substrate and the deposited thin film cannot be sufficiently improved. In addition, the conventional discharge treatment method is performed by applying a DC voltage or an AC voltage to the substrate, so the degree of vacuum when performing the discharge treatment is 6X1.
0-5 to 5.5 x 10-4 torr to 10-5 to 5.
The pressure is about 5×10 −4 torr, and therefore, it is sometimes necessary to perform the discharge treatment and the film formation treatment separately.
発明の目的
本発明は、上記のような従来技術における問題点を解決
しようとするものであって、基板との密着強度に優れた
薄膜を形成しうるような薄膜形成方法を提供することを
目的としている。Purpose of the Invention The present invention aims to solve the problems in the prior art as described above, and aims to provide a method for forming a thin film that can form a thin film with excellent adhesion strength to a substrate. It is said that
発明の概要
本発明に係る薄膜形成方法は、基板部に高周波電圧を印
加して放電を生じさせて基板に放電処理を施した後に、
該基板上に薄膜を被着させることを特徴としている。Summary of the Invention The thin film forming method according to the present invention includes applying a high frequency voltage to a substrate portion to generate a discharge to perform a discharge treatment on the substrate;
The method is characterized in that a thin film is deposited on the substrate.
本発明によれば、基板上に薄膜を被着させるに先立って
、基板部に高周波電圧を印加して放電を生じさせて基板
に放電処理を施しているので、基板上に、該基板との密
着性に優れた薄膜を形成することができる。According to the present invention, prior to depositing a thin film on the substrate, a high frequency voltage is applied to the substrate section to generate a discharge and the substrate is subjected to a discharge treatment. A thin film with excellent adhesion can be formed.
発明の詳細な説明
以下本発明に係る薄膜形成方法について、具体的に説明
する。DETAILED DESCRIPTION OF THE INVENTION The thin film forming method according to the present invention will be specifically described below.
本発明では、基板部に高周波電圧を印加して放電を生じ
させて基板に放電処理を施した後に、該基板上に薄膜を
被着させているが、以下に本発明に係る薄膜形成方法を
、この方法を実施する際に用いられる装置に言及しなが
ら説明する。In the present invention, a thin film is deposited on the substrate after the substrate is subjected to discharge treatment by applying a high frequency voltage to the substrate to generate a discharge.The thin film forming method according to the present invention will be described below. , will be explained with reference to the apparatus used in carrying out this method.
第１図には、薄膜を形成する際に用いられるイオンブレ
ーティング装置を示すが、この装置１では、真空槽２の
内部上方に、基板支持部３が設けられており、この基板
支持部３には、薄膜が被着される基板４が取付けられて
いる。また真空槽２の内部下方には、加熱源５が設けら
れており、この加熱源５の中央部には蒸着材料６が保持
されている。FIG. 1 shows an ion blating apparatus used for forming a thin film. In this apparatus 1, a substrate support part 3 is provided inside and above a vacuum chamber 2. A substrate 4 is attached to which the thin film is applied. Further, a heating source 5 is provided in the lower part of the interior of the vacuum chamber 2, and a vapor deposition material 6 is held in the center of the heating source 5.
本発明では、このような基板支持部３に高周波電源７が
接続されて、基板支持部３および基板４に高周波電圧を
印加できるようになっている。In the present invention, a high frequency power source 7 is connected to such a substrate support section 3 so that a high frequency voltage can be applied to the substrate support section 3 and the substrate 4.
ここで本明細書では、基板部とは、基板支持部３と基板
４との両者あるいはこのいずれか一方を意味している。Here, in this specification, the substrate section means both or one of the substrate support section 3 and the substrate 4.
なお第１図には、本発明に係る薄膜形成方法で用いられ
る装置の一例を示すが、本発明では第１図に示す装置以
外の装置を用いることもできることは云うまでもない。Although FIG. 1 shows an example of an apparatus used in the thin film forming method according to the present invention, it goes without saying that apparatuses other than the apparatus shown in FIG. 1 can be used in the present invention.
上記のようなイオンブレーティング方法においては、成
膜時には、ｌＸ１０−５〜５．５Ｘ１０−５〜５．５×
１０−４ｔｏｒｒ好ましくは２． ６ Ｘ １０−”
〜２ Ｘ １０−４ｔｏｒｒさらに好ましくは２．６Ｘ
１０＝〜１．５×１、０ ”−５〜５．５×１０−４ｔ
ｏｒｒ程度の真空度であることが望ましい。In the above-mentioned ion blasting method, during film formation, lX10-5 to 5.5X10-5 to 5.5X
10-4 torr preferably 2. 6 x 10-”
~2X 10-4torr, more preferably 2.6X
10=~1.5×1,0”-5~5.5×10-4t
It is desirable that the degree of vacuum be approximately 1.0 orr.
この真空度は、薄膜形成部近傍での値であり、薄膜形成
部近傍とは、放電領域から直線距離で１０〜１００印離
れた領域を意味し、またこれらの間には排気抵抗の大き
な遮蔽物が介在していないものとする。This degree of vacuum is the value near the thin film formation area, and the vicinity of the thin film formation area means an area 10 to 100 marks away in a straight line from the discharge area, and there is a shield with a large exhaust resistance between these areas. Assume that there are no objects involved.
本発明では、上記のような真空条件下に保持するために
、真空槽２内にアルゴンガス、窒素ガスなどの気体を導
入してもよく、また残留ガスによってもよい。In the present invention, in order to maintain the vacuum condition as described above, gas such as argon gas or nitrogen gas may be introduced into the vacuum chamber 2, or residual gas may be used.
この高周波電圧とは、１００ＫＨｚ以上の周波数を有す
る電圧を意味し、この高周波電圧はマ、ツチングボック
ス（図示せず）を経て基板４に直接印加してもよく、ま
た基板支持部３に印加してもよい。本発明では、上記の
ような高周波電圧だけを基板部に印加してもよく、また
高周波電圧を直流電圧に重畳させながら基板部に印加し
てもよい。This high frequency voltage means a voltage having a frequency of 100 KHz or more, and this high frequency voltage may be directly applied to the substrate 4 via a connecting box (not shown), or may be applied to the substrate support 3. You may. In the present invention, only the high frequency voltage as described above may be applied to the substrate section, or the high frequency voltage may be applied to the substrate section while being superimposed on the DC voltage.
本発明では、上記のように高周波電圧を単独であるいは
直流電圧に重畳させて基板部に印加するが、基板部に高
周波電圧を印加すると放電が生ずる。そしてこの際基板
部に生ずる直流成分の電圧すなわち直流電圧Ｖ、。が０
．４〜８ＫＶ好ましくは１．０〜８．ＯＫＶの範囲とな
るようにする。In the present invention, as described above, the high frequency voltage is applied to the substrate section alone or in combination with a DC voltage, and when the high frequency voltage is applied to the substrate section, discharge occurs. At this time, a DC component voltage, that is, a DC voltage V, is generated in the substrate section. is 0
．． 4-8KV preferably 1.0-8. Keep it within the OKV range.
この直流電圧Ｖ、。は、高周波電圧のみを印加した場合
であっても、また高周波電圧を直流電圧に重畳させて印
加した場合であっても、上記の範囲であることが必要で
ある。This DC voltage V. must be within the above range even when only a high frequency voltage is applied or when a high frequency voltage is applied in a superimposed manner on a DC voltage.
基板部に誘起される直流型・圧が０．４ＫＶ未満である
と、放電の安定性が保てなくなるばかりか、基板への蒸
発粒子の衝突エネルギーが小さくなり、安定性および密
着強度に優れた薄膜が得られないため好ましくなく、一
方８ＫＶを超えると、基板の熱損傷が大きくなるため好
ましくない。If the DC type pressure induced in the substrate is less than 0.4 KV, not only will the stability of the discharge not be maintained, but the collision energy of the evaporated particles on the substrate will be small, resulting in excellent stability and adhesion strength. This is not preferable because a thin film cannot be obtained, and on the other hand, if it exceeds 8 KV, thermal damage to the substrate will increase, which is not preferable.
本発明では、基板４は、金属、ガラスなどの無機材料で
あってもよく、またプラスチックなどの有機材料であっ
てもよい。さらにこの基板４は、フィルム状であっても
よく、基板４がフィルムである場合には、第３図に示す
ようなイオンブレーティング装置を用いることができる
。すなわち、第３図に示すイオンブレーティング装置２
０では、真空槽２の内部上方に、送り出しコア２１、巻
取りコア２２および基板支持部としてのクーリングキャ
ン２３が設けられており、また真空ＷＩ２の内部下方に
は蒸着材料２４が設けられており、この蒸着材料２４は
電子銃２５により加熱されるようになっている。またフ
ィルム基板４は、送り出しコア２１から送り出されて、
クーリングキャン２３の外周面を巻回し、巻取りコア２
２に巻取られるようになっている。さらにこのクーリン
グキャン２３には、マツチングボックス（図示せず）を
経て高周波型［７が接続され、クーリングキャン２３に
高周波電圧を印加できるようになっている。なお第３図
において、２６はマスクである。In the present invention, the substrate 4 may be made of an inorganic material such as metal or glass, or may be made of an organic material such as plastic. Furthermore, this substrate 4 may be in the form of a film, and when the substrate 4 is a film, an ion blating device as shown in FIG. 3 can be used. That is, the ion brating device 2 shown in FIG.
0, a delivery core 21, a winding core 22, and a cooling can 23 as a substrate support are provided inside and above the vacuum chamber 2, and a vapor deposition material 24 is provided below inside the vacuum WI2. , this vapor deposition material 24 is heated by an electron gun 25. Further, the film substrate 4 is sent out from the sending core 21,
Winding the outer peripheral surface of the cooling can 23, the winding core 2
It is designed to be wound up in two. Furthermore, a high frequency type [7 is connected to the cooling can 23 via a matching box (not shown), so that a high frequency voltage can be applied to the cooling can 23. In addition, in FIG. 3, 26 is a mask.
このようなイオンブレーティング装置２０を用いる場合
には、クーリングキャンのみに高周波電圧を印加すれば
よい。When using such an ion brating device 20, it is sufficient to apply a high frequency voltage only to the cooling can.
上記のように本発明では、基板部会体に高周波電圧を印
加してもよく、また基板部の一部に高周波電圧を印加し
てもよい。As described above, in the present invention, a high frequency voltage may be applied to the substrate section assembly, or a high frequency voltage may be applied to a part of the substrate section.
基板４上に成膜される薄膜は、どのような薄膜であって
もよい。The thin film formed on the substrate 4 may be any thin film.
このように基板部に高周波電圧を印加して放電を生じさ
せて基板に放電処理を施した後に、該基板上に薄膜を被
着させる。基板上に薄膜を被着させるに際しては、イオ
ンブレーティング法によって行なってもよいが、真空蒸
着法、通常のイオンブレーティング法あるいはスパッタ
リング法で行なってもよい。さらに本発明では、基板の
放電処理が終了した後直ちに薄膜の成膜を行なってもよ
く、また放電処理終了後一定時間が経過した後に薄膜の
成膜を行なってもよい。After applying a high-frequency voltage to the substrate portion to generate a discharge and performing a discharge treatment on the substrate, a thin film is deposited on the substrate. The thin film may be deposited on the substrate by an ion blasting method, but may also be a vacuum evaporation method, a normal ion blasting method, or a sputtering method. Further, in the present invention, the thin film may be formed immediately after the discharge treatment of the substrate is completed, or the thin film may be formed after a certain period of time has passed after the discharge treatment is completed.
上記のように基板部に高周波電圧を印加して放電を生じ
させて基板に放電処理を施すと、基板との密着性に優れ
た薄膜を、基板上に被着させることができる。これは、
基板部に高周波電圧を印加して放電を生じさせて基板に
放電処理を施すと、基板表面が一部エッチングされて活
性化され、薄膜との密着強度が向上するためであろうと
考えられる。When a high frequency voltage is applied to the substrate portion to generate a discharge and the substrate is subjected to discharge treatment as described above, a thin film having excellent adhesion to the substrate can be deposited on the substrate. this is,
It is thought that this is because when a high frequency voltage is applied to the substrate section to generate a discharge and the substrate is subjected to discharge treatment, a portion of the substrate surface is etched and activated, improving the adhesion strength with the thin film.
本発明における基板の薄膜形成方法では、放電処理を従
来の放電処理法と比較して高真空下で行なうことが可能
であり、放電処理に引続いて成膜を直ちに行なうことも
可能である。また場合によっては、放電処理を継続しな
から成膜を行なうことも可能である。また、基板がフィ
ルムである場合にはキャンなどへのフィルムの巻込みも
防ＩＬ。In the method for forming a thin film on a substrate according to the present invention, discharge treatment can be performed under a high vacuum compared to conventional discharge treatment methods, and film formation can be performed immediately following discharge treatment. In some cases, it is also possible to form a film without continuing the discharge treatment. In addition, if the substrate is film, it also prevents the film from getting caught in cans, etc.
できるきいう効果がある。It has a powerful effect.
発明の効果
本発明によれば、基板上に薄膜を被着させるに先立って
、基板部に高周波電圧を印加して放電を生じさせて基板
に放電処理を施しているので、基板上に、該基板との密
着性に優れた薄膜を形成することができる。Effects of the Invention According to the present invention, prior to depositing a thin film on the substrate, a high frequency voltage is applied to the substrate section to generate a discharge to perform a discharge treatment on the substrate. A thin film with excellent adhesion to the substrate can be formed.
以下本発明を実施例により説明するが、本発明はこれら
実施例に限定されるものではない。EXAMPLES The present invention will be explained below with reference to Examples, but the present invention is not limited to these Examples.
実施例１
フィルム基板上に薄膜を形成しつるようなり−リングキ
ャンを有する真空槽を用いて、真空槽の内部を３． ６
ｘｌＯｔｏｒｒまで排気し、次いでアルゴンガスを９．
ＯＸ １０−”ｔｏｒｒまで導入した。Example 1 A thin film was formed on a film substrate, and the inside of the vacuum chamber was subjected to 3 steps using a vacuum chamber with a ring can. 6
Evacuate to xlOtorr, then argon gas at 9.
OX up to 10-”torr was introduced.
このクーリングキャンに１．３．５６ＭＨｚの高周波電
圧と直流電圧とを重畳させてＶＤｏが１．５ＫＶとなる
ように印加し、クーリングキャン上部または側部て厚さ
５０μｍのＰＰＡフィルムに放電処理を行ないながら、
クーリングキャン下部で同様の放電処理にさらしなから
Ｃｕ膜を１．８μｍの膜厚で形成した。A 1.3.56 MHz high frequency voltage and a DC voltage were superimposed and applied to this cooling can so that VDo was 1.5 KV, and a discharge treatment was performed on the 50 μm thick PPA film on the top or side of the cooling can. While
A Cu film with a thickness of 1.8 μm was formed on the lower part of the cooling can without exposing it to the same discharge treatment.
このようにして基板上に成膜したＣｕ膜の剥離強度を、
第２図に示すような装置を用いて測定した。すなわち第
２図では基板４は支持台８に接着剤層９を介して固着さ
れ、接着強度測定棒１０は接着剤層９を介してＣｕ膜１
１に接着され、この接着強度７１ＦＩ定棒１０を上方に
引上げてＵ−ゲージにより、Ｃｕ膜の剥離強度を測定し
た。The peel strength of the Cu film formed on the substrate in this way is
The measurement was carried out using an apparatus as shown in FIG. That is, in FIG. 2, the substrate 4 is fixed to the support stand 8 via the adhesive layer 9, and the adhesive strength measuring rod 10 is fixed to the Cu film 1 via the adhesive layer 9.
The peel strength of the Cu film was measured using a U-gauge by pulling the FI constant rod 10 upward.
結果を表１に示す。The results are shown in Table 1.
実施例２
厚さ１．１龍、１３０φのウルテム基板を真空槽内に取
付けるとともに、蒸着源としてのＴＩを蒸着ボート内に
載置した。次いで真空槽を真空度３ Ｘ １０−６ｔｏ
ｒｒまで排気し、次いでアルゴンガスを８ Ｘ １０−
５ｔｏｒｒまで導入した。Example 2 An Ultem substrate with a thickness of 1.1 mm and a diameter of 130 mm was installed in a vacuum chamber, and a TI as a deposition source was placed in a deposition boat. Next, the vacuum chamber is heated to a vacuum level of 3 x 10-6to
Evacuate to rr and then add argon gas to 8
It was introduced up to 5 torr.
このような基板に、１３．５６ＭＨｚの高周波電圧を、
ｖＤＣが１．ＩＫＶとなるように印加して放電させて放
電処理を行なった後、７Ｘ１０−６【０「「でＴ１膜を
真空蒸着法により４９００人の膜厚で基板上に形成した
。Applying a high frequency voltage of 13.56MHz to such a board,
vDC is 1. After performing a discharge treatment by applying and discharging at IKV, a T1 film with a thickness of 4900 mm was formed on the substrate by a vacuum evaporation method using 7×10 −6 0.0 mm.
このようにして形成されたＴｉ膜の剥離強度を実施例１
と同様にして測定した。The peel strength of the Ti film formed in this way was measured in Example 1.
It was measured in the same manner.
結果を表１に示す。The results are shown in Table 1.
比較例１
実施例２において、基板に放電処理を施すことなく、真
空槽を２． ５ Ｘ １０−６ｔｏｒｒまで排気し、ア
ルゴンガスを７． ６ Ｘ １０−６ｔｏｒｒになるま
で導入し基板上にＴｉ膜を真空蒸着法により４９００人
の膜厚で形成した。Comparative Example 1 In Example 2, the vacuum chamber was subjected to 2. Evacuate to 5 X 10-6 torr and replace argon gas with 7. A Ti film was formed on the substrate to a thickness of 4,900 by vacuum evaporation.
このようにして形成されたＴｉ膜の剥離強度を実施例１
と同様にして測定した。The peel strength of the Ti film formed in this way was measured in Example 1.
It was measured in the same manner.
結果を表１に示す。The results are shown in Table 1.
比較例２
実施例１と同様な基板および真空槽を用いて、真空槽内
に高周波電圧を印加できるステンレスバイブを加工した
コイルを基板と蒸発物との間に設置し、基板を接地させ
て３． ＯＸ １０＝ｔｏｒｒまで排気した後、アル
ゴンガスを８． ＯＸ １０−４Ｌｏｒｒまで導入し
、１３．５６ＭＨｚの高周波電圧をステンレスパイプに
０．５ＫＷ印加し、放電させて放電処理を行なった後、
放電を停止させて、Ｔｉ膜を真空度７． ＯＸ １０
−６ｔｏｒｒで真空蒸着法により４９００人の膜厚で形
成した。Comparative Example 2 Using the same substrate and vacuum chamber as in Example 1, a coil made of a stainless steel vibrator that can apply a high frequency voltage inside the vacuum chamber was installed between the substrate and the evaporator, and the substrate was grounded. ．． After exhausting to OX 10=torr, the argon gas was pumped to 8. After introducing up to OX 10-4Lorr and applying a 13.56MHz high frequency voltage of 0.5KW to the stainless steel pipe to discharge it and perform discharge treatment,
Discharge is stopped and the Ti film is vacuumed to a vacuum level of 7. OX10
The film was formed to a thickness of 4900 mm by vacuum evaporation at -6 torr.
このようにして形成されたＴｉ膜の剥離強度を実施例１
と同様にして測定した。The peel strength of the Ti film formed in this way was measured in Example 1.
It was measured in the same manner.
結果を表１に示す。The results are shown in Table 1.
表 １
表１において、実施例２および比較例１〜２の剥離強度
は、実施例１の剥離強度を１．００とした場合の相対値
である。Table 1 In Table 1, the peel strengths of Example 2 and Comparative Examples 1 and 2 are relative values when the peel strength of Example 1 is set to 1.00.
第１図は、本発明に係る薄膜形成方法に用いる装置であ
り、第２図は、薄膜の基板への密着強度を／Ｉ−１定す
る方法を説明する図であり、第３図は、本発明に係る薄
膜形成方法に用いる装置である。
１・・・イオンブレーティング装置
２・・・真空槽 ３・・・基板支持部４・・・
基板 ５・・・加熱源６・・・蒸着材料
７・・・高周波電源
・・・薄膜
３・・・クーリ
ングキャン
２６・・・マスクFIG. 1 shows an apparatus used in the thin film forming method according to the present invention, FIG. 2 is a diagram illustrating a method for determining the adhesion strength of a thin film to a substrate by /I-1, and FIG. This is an apparatus used in the thin film forming method according to the present invention. 1... Ion blating device 2... Vacuum chamber 3... Substrate support part 4...
Substrate 5... Heating source 6... Vapor deposition material 7... High frequency power source... Thin film 3... Cooling can 26... Mask
Claims (1)
板に放電処理を施した後に、基板上に薄膜を被着させる
ことを特徴とする薄膜形成法。 ２）基板部に高周波電圧を印加する際の真空槽内の真空
度が１×１０＾−＾５〜５．５×１０＾−＾４ｔｏｒｒ
である請求項第１項に記載の薄膜形成法。 ３）基板部に高周波電圧を印加した際に基板部に生ずる
直流電圧Ｖ＿Ｄ＿Ｃが０．４〜８ＫＶの範囲である請求
項第１項に記載の薄膜形成法。[Scope of Claims] 1) A thin film forming method, which comprises applying a high frequency voltage to a substrate portion to generate a discharge to perform a discharge treatment on the substrate, and then depositing a thin film on the substrate. 2) The degree of vacuum in the vacuum chamber when applying high frequency voltage to the substrate part is 1 x 10^-^5 to 5.5 x 10^-^4 torr.
The thin film forming method according to claim 1. 3) The thin film forming method according to claim 1, wherein the DC voltage V_D_C generated in the substrate portion when a high frequency voltage is applied to the substrate portion is in the range of 0.4 to 8 KV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24537388A JPH0293059A (en) | 1988-09-29 | 1988-09-29 | Thin film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24537388A JPH0293059A (en) | 1988-09-29 | 1988-09-29 | Thin film formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0293059A true JPH0293059A (en) | 1990-04-03 |
Family
ID=17132697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24537388A Pending JPH0293059A (en) | 1988-09-29 | 1988-09-29 | Thin film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0293059A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60174873A (en) * | 1984-02-20 | 1985-09-09 | Hitachi Cable Ltd | Pretreatment of metallic substrate for vapor deposition |
-
1988
- 1988-09-29 JP JP24537388A patent/JPH0293059A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60174873A (en) * | 1984-02-20 | 1985-09-09 | Hitachi Cable Ltd | Pretreatment of metallic substrate for vapor deposition |
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