JPH029026A - Semiconductor laser driving device - Google Patents

Semiconductor laser driving device

Info

Publication number
JPH029026A
JPH029026A JP63158070A JP15807088A JPH029026A JP H029026 A JPH029026 A JP H029026A JP 63158070 A JP63158070 A JP 63158070A JP 15807088 A JP15807088 A JP 15807088A JP H029026 A JPH029026 A JP H029026A
Authority
JP
Japan
Prior art keywords
light
semiconductor laser
optical
output
light sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63158070A
Other languages
Japanese (ja)
Other versions
JPH07118085B2 (en
Inventor
Morihiro Karaki
唐木 盛裕
Masahisa Shinoda
昌久 篠田
Yasuyuki Sato
泰幸 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63158070A priority Critical patent/JPH07118085B2/en
Priority to US07/368,034 priority patent/US4942584A/en
Publication of JPH029026A publication Critical patent/JPH029026A/en
Publication of JPH07118085B2 publication Critical patent/JPH07118085B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the need of the separate detection of each optical output, to relax the positioning accuracy and to improve the mass-producing property by receiving laser beams from plural pieces of light sources in a lump by a two-division photodetector, and calculating an optical output signal, and detecting separately optical outputs from each light source. CONSTITUTION:A front laser luminous flux from two pieces of laser light sources of a semiconductor laser array 6 is divided into two by a beam splitter 20, and one of them is received in a lump by a two-division photodetector 22. Subsequently, an optical output signal passes through current/voltage converters 23, 24 and processed by an arithmetic circuit means having differential amplifiers 25, 27 and amplifiers 26, 28 and 29, the corresponding output of the detector 22 corresponding to a front light 12b is calculated as the product of a difference output of the transducers 23, 24 and a proportional constant K2 corresponding to an amplification factor of the amplifier 28, and in the same way, the corresponding output of the front light 12a is calculated and optical outputs of each light source are detected separately. Next, based on the detected output, the intensity of a laser light from each light source is adjusted so as to be made constant through driving circuits 30a, 30b. According to such constitution, it is unnecessary to detect separately each optical output, and the constitution of an optical system is simplified.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体レーザ駆動装置に関し、もう少し詳
しくいうと、光学的に情報の記録・再生を行う情報記録
・再生装置等の光源として用いられる半導体レーザ、特
に、複数個の発光源を有する半導体レーザの駆動装置に
関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor laser driving device, and more specifically, it is used as a light source for information recording/reproducing devices that optically record and reproduce information. The present invention relates to a driving device for a semiconductor laser, particularly a semiconductor laser having a plurality of light emitting sources.

〔従来の技術〕[Conventional technology]

第5図は、例えば特開昭60−263349号公報に記
載された従来の半導体レーザ駆動装置で、主として発光
部(1)、受光部(2)、プリント配線基板(3)から
なっている。まず、発光部(1)は、金属基板(4)上
にヒートシンクとしてヘッダ(5)が取付けられ、この
ヘッダ(5つの平面状の上部端面に2つの半導体レーザ
光源からなる半導体レーザアVイ(6)が取付けられて
いる。金属基板(4)の中心孔(4a)には円柱状の集
光レンズ(7)がはめ合わせ装着されている。
FIG. 5 shows a conventional semiconductor laser driving device described in, for example, Japanese Unexamined Patent Publication No. 60-263349, which mainly consists of a light emitting section (1), a light receiving section (2), and a printed wiring board (3). First, the light emitting unit (1) has a header (5) attached as a heat sink on a metal substrate (4), and this header (semiconductor laser array (6) consisting of two semiconductor laser light sources on five planar upper end faces). ) is attached to the center hole (4a) of the metal substrate (4).A cylindrical condensing lens (7) is fitted and attached to the center hole (4a) of the metal substrate (4).

第1のステム(8)は、3本あるが1本は図示を省略し
ている。この第1のステム(8)が半導体レーザアVイ
(6)の各半導体レーザ光源に接続@(図示省略)を介
して接続されている。また、この第1のステム(8)は
、金属基板(4)のガラス充填材(9)によって充填さ
れた透孔(9a)を通って金属基板(4)の下方に延在
し、プリント配線基板(3)K固定されている。
There are three first stems (8), but one is not shown. This first stem (8) is connected to each semiconductor laser light source of the semiconductor laser eye (6) via a connection @ (not shown). This first stem (8) also extends below the metal substrate (4) through a through hole (9a) filled with a glass filler (9) of the metal substrate (4), and extends downwardly through the printed wiring. Board (3) K is fixed.

パッケージ(10)はその中心孔(10a)にガラス板
(11)を貼合わせて、ヘッダ(5)を覆うように金属
基板(4)に固定されている。そして、半導体レーザア
レイ(6)の2つの半導体レーザ光源から、それぞれ前
方光(12a)(12b)および後方光(13a)(1
3b)が出射される。前方光(12a)(12b)は情
報記録媒体に照射され、これにより情報の記録・再生が
行われる。また、後方光(13a)(13b)は後述す
るように、前方光(12a)(12b)の光出力の制御
に用いられる。
The package (10) is fixed to the metal substrate (4) by bonding a glass plate (11) to its center hole (10a) so as to cover the header (5). Then, from the two semiconductor laser light sources of the semiconductor laser array (6), forward light (12a) (12b) and backward light (13a) (1
3b) is emitted. The forward light (12a) (12b) is irradiated onto the information recording medium, thereby recording and reproducing information. Further, the rear lights (13a) (13b) are used to control the light output of the front lights (12a) (12b), as will be described later.

次に、受光部(2)は、透明ブロック(14)の内部に
1対の光検知器(15a)(15b)が埋込まれている
。透−ブロック(143の両端には3本の第2のステム
(16)が突出されている(1本図示省略)。
Next, the light receiving section (2) has a pair of photodetectors (15a) (15b) embedded inside a transparent block (14). Three second stems (16) protrude from both ends of the transparent block (143) (one not shown).

この第2のステム(16)は、七〇内端部が透明ブロッ
ク(14)の内部で光検知器(15a)(15b)に接
続されるとともに、その外端部がプリント配線基板(3
)に取付けられている。
This second stem (16) has an inner end connected to the photodetectors (15a) (15b) inside the transparent block (14), and an outer end connected to the printed wiring board (3).
) is installed.

プリント配線基板(3)には、金属基板(4)の中心孔
(4a)に対応する透孔(3a)が設けられている。
The printed wiring board (3) is provided with a through hole (3a) corresponding to the center hole (4a) of the metal board (4).

以上の構成において、発光部(1)の金属基板(4)の
中心孔(4a)およびプリント配線基板(3)の透孔(
3a)に対応する位置に、受光部(2)の1対の光検知
器(15a)(15b)が位置決めされており、半導体
レーザアレイ(6)から出射された後方光(13a’)
(13b)は円柱状の集光レンズ(7)によって分離さ
れ、それぞれ別々に光検知器(15a)(15b)に入
射して焦点を結ぶ。従って、半導体レーザアレイ(6)
の各半導体レーザ光源から出射される前方光(12a)
(12b)の光出力の制御を、後方光(13a)(13
b)を受光する1対の光検知器(15a>(15b)の
出力信号を用いて、各々の半導体レーザ光源の駆動回路
(図示せず)を動作させることにより達成する。
In the above configuration, the center hole (4a) of the metal substrate (4) of the light emitting part (1) and the through hole (
A pair of photodetectors (15a) (15b) of the light receiving section (2) is positioned at a position corresponding to 3a), and the backward light (13a') emitted from the semiconductor laser array (6)
(13b) are separated by a cylindrical condensing lens (7), and are separately incident on photodetectors (15a) and (15b) to be focused. Therefore, the semiconductor laser array (6)
Front light (12a) emitted from each semiconductor laser light source of
The control of the light output of (12b) is controlled by the rear light (13a) (13
b) is achieved by operating a drive circuit (not shown) for each semiconductor laser light source using the output signal of a pair of photodetectors (15a>(15b)) that receive light.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の半導体レーザ駆動装置は以上のように構成されて
いるので、光検知器(15a’)(15b)K後方光(
13a)(13b)を築光させるために、来光レンズ(
7)をパッケージ(10)の狭い内部に位置決めするの
が大変困難であり、著しく量産性に欠けるという問題係
があった。
Since the conventional semiconductor laser driving device is configured as described above, the photodetectors (15a') (15b)K rear light (
13a) (13b) In order to build up the light, the coming lens (
7) is extremely difficult to position within the narrow interior of the package (10), which poses a problem in that mass production is significantly lacking.

この発明は上記のような問題薇を解決するためKなされ
たもので、狭いパッケージ内部における集光レンズの位
置決め工程を回避し、量産性のある半導体レーザ駆動装
曾を得ることを目的とする。
The present invention has been made to solve the above-mentioned problems, and its object is to avoid the step of positioning a condensing lens inside a narrow package and to obtain a semiconductor laser driving device that can be mass-produced.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半導体レーザ駆動装買は、複数個の半導
体レーザ光源からの複数の前方光を一括して受光する2
分割光検知器を設け、この2分割光検知器からの光出力
信号を演算することによって、複数個の半導体レーザ光
源め光出力を各別に検出するようにしたものである。
A semiconductor laser drive device according to the present invention receives a plurality of forward lights from a plurality of semiconductor laser light sources at once.
A split photodetector is provided, and the light output from a plurality of semiconductor laser light sources is detected separately by calculating the light output signal from the two-split photodetector.

〔作 用〕[For production]

この発明においては、複数個の半導体レーザ光源の光出
力の検出が複数の前方光を一括して2分割光検知器で受
光することによって行わわるため、複数の光束を分離し
て検出する必要がない。
In this invention, since detection of the optical output of a plurality of semiconductor laser light sources is performed by receiving a plurality of forward lights at once with a two-split photodetector, it is necessary to separate and detect a plurality of light beams. do not have.

〔実施例〕〔Example〕

第1図はこの発明め←実施例を示し、図において1発光
部(17)を構成する符号(4A)(5)(6)(8a
)(8b)(9)(9a)(10)(10a)(11)
および半導体レーザアレイ(6)の前方光(12a)(
12b)は、第5図におけると同様のものである。接続
線(18a)(18b)は半導体レーザアレイ(6)の
複数個の光源を各別に動作させる電流を供給するもので
、一端が半導体レーザアレイ(6)に、他端が第1のス
テム(8a )(8b)にそれぞれ接続されている。
Fig. 1 shows an embodiment of this invention, and in the figure, symbols (4A) (5) (6) (8a) constituting one light emitting section (17) are shown.
) (8b) (9) (9a) (10) (10a) (11)
and the forward light (12a) of the semiconductor laser array (6) (
12b) is similar to that in FIG. The connection lines (18a) and (18b) supply current to individually operate the plurality of light sources of the semiconductor laser array (6), and one end connects the semiconductor laser array (6) and the other end connects the first stem ( 8a) and (8b), respectively.

コリメータレンズ(19)は前方光(12a)(12b
)を平行光束にする。ビームスプリッタ(20)は、上
記平行光束を2分する。ビームスプリッタ(20)を透
過した前方光(12a)(12b)は、例えば、光ディ
スクのような情報記録媒体(図示省略)方向に導かれて
情報の記録再生に用いられる。一方、ビームスプリッタ
(20)で反射された前方光(12a)(12b)はレ
ンズ(21)を介して2分割光検知器(22)に入射す
る。電流電圧変換器(23)(24)は2分割光検知器
(22)の出力信号を電圧信号に変換する。差動増幅器
(25)には′f!L流電圧変換器(23”1(24)
の出力が接続されている。また、増幅器(26)には1
を流電圧変換器(24)の出力が接続されている。さら
に、増幅器(26)の出力端は差動増幅器(27)の加
算入力端子に接続されている。一方、差動増幅器(25
)の次段には増幅器(28)が接続されており、増幅器
(28)の出力端は増幅器(29)およびレーザ駆動回
路(33b)Kそれぞれ接続されている。増幅器(29
)の出力端は差動増幅器(27)の減算入力端子に接続
されている。差動増幅器(27)の出力端はレーザ駆動
回路(30a)に接続されている。レーザ駆動回路(3
0a)(30b)の出力端はそれぞれステム(8a)(
8b)に接続されている。
The collimator lens (19) provides front light (12a) (12b)
) into a parallel beam of light. The beam splitter (20) splits the parallel beam into two. The forward light (12a) (12b) transmitted through the beam splitter (20) is guided toward an information recording medium (not shown) such as an optical disk, and is used for recording and reproducing information. On the other hand, the forward light (12a) (12b) reflected by the beam splitter (20) enters the two-split photodetector (22) via the lens (21). Current-voltage converters (23) and (24) convert the output signal of the two-split photodetector (22) into a voltage signal. The differential amplifier (25) has 'f! L current voltage converter (23”1 (24)
output is connected. In addition, the amplifier (26) has 1
The output of the current voltage converter (24) is connected. Further, the output terminal of the amplifier (26) is connected to the addition input terminal of the differential amplifier (27). On the other hand, the differential amplifier (25
) is connected to the next stage of the amplifier (28), and the output end of the amplifier (28) is connected to the amplifier (29) and the laser drive circuit (33b) K, respectively. Amplifier (29
) is connected to the subtraction input terminal of the differential amplifier (27). The output end of the differential amplifier (27) is connected to the laser drive circuit (30a). Laser drive circuit (3
The output ends of 0a) and 30b are connected to stems 8a and 30b, respectively.
8b).

次に動作について説明する。半導体レーザアレイ(6)
の複数個の光源において、接続線(18a)側の光源を
LDa +接続i (18b)側の光源をLDbとし、
それぞれの光出力をPa、Pbとする。また、2分割光
検知器(22)および2分割光検知器(22)の出力信
号演算回路部の動作を第2図によって説明する。第2図
において、光スポラ) (31a)はLDaの前方光(
12a)に対応し、光スポット(31b)はLDbの前
方光(12b)に対応している。なお、破線(33)は
光スポット(31a)(31b)の中心を結ぶ直線であ
り、2分割光検知器(22)の受光面(22a)(22
b)の分割線(22c)K対しである角度をなしている
。LDaからの前方光(12a)の受光面(22a)お
よび(22b)までのパワー伝達率をそれぞれTas 
、 Ta2mまたはI、Dbから前方光(12b)の受
光面(22a)および(22b)までのパワー伝達率を
それぞれTb1. Tb2とする(0< Ta1.Ta
z、Tbt、Tbz < 1 )。
Next, the operation will be explained. Semiconductor laser array (6)
In the plurality of light sources, the light source on the connection line (18a) side is LDa + the light source on the connection i (18b) side is LDb,
Let the respective optical outputs be Pa and Pb. Further, the operation of the two-split photodetector (22) and the output signal calculation circuit section of the two-split photodetector (22) will be explained with reference to FIG. In Fig. 2, the optical spora) (31a) is the forward light of LDa (
12a), and the light spot (31b) corresponds to the front light (12b) of LDb. Note that the broken line (33) is a straight line connecting the centers of the light spots (31a) (31b), and the light receiving surfaces (22a) (22) of the two-split photodetector (22).
The dividing line (22c) in b) forms a certain angle with K. Tas is the power transmission rate of the forward light (12a) from LDa to the light receiving surfaces (22a) and (22b), respectively.
, Ta2m or I, the power transmission rate from Db to the light receiving surfaces (22a) and (22b) of the forward light (12b) is Tb1. Tb2 (0< Ta1.Ta
z, Tbt, Tbz < 1).

LDa、LDbが同時にそれぞれPa、Pbで発光して
いる場合に、電流電圧変換器(23)および(24)そ
れぞれの出力電圧信号P 11.およびP2は、一般に
、次のような関係式が成立する。
When LDa and LDb simultaneously emit light at Pa and Pb, respectively, the output voltage signals P of the current-voltage converters (23) and (24).11. In general, the following relational expression holds true for and P2.

P1= (Ta1・Pa + Tbt*Pb )* K
αa Kβa(1)Pg  =  (Ta2@Pa  
+  Tbz*Pb  )  *  Kα *  Kβ
ト   (2)(1)(2)式において、Kαは光検知
器の光−電流変換効率、(1)式のにβaは電流電圧変
換器(23)の電流電圧変換効率、(2)式のにpbは
電流電圧変換器(24)の電流電圧変換効率である。こ
こで と置く。P 1’ 、 P 2/は光検知器受光面(2
2a)(22b)への入力光信号であり、これを(1)
 (2)式に代入すると、 Pl’= T3t  a Pa + Tbt  * P
b      (5)Pz’= Ta2@Pa + T
bz  @ Pb      (61と表わすことがで
きる。上式(31(41において、Kβ=にβa=にp
b、また、上式(51(61において、 Tax −T
a2どなるように調整されており、(5) −(6)の
演算を行うことにより、 Pl’ −P2’ = (Tbt −Tbz)φpbT
b1−Tbz =Kz  ・ (Pt −P2)(7)となり、LDb
の光出力pbは比例定数に2および電流電圧変換器(2
3)の出力信号P1と電流電圧変換器(24)の出力信
号P2の差の積として検出される。従ってLDaの光出
力Paにかかわらず。
P1= (Ta1・Pa + Tbt*Pb)*K
αa Kβa(1)Pg = (Ta2@Pa
+ Tbz*Pb) * Kα * Kβ
(2) In equations (1) and (2), Kα is the light-to-current conversion efficiency of the photodetector, βa in equation (1) is the current-voltage conversion efficiency of the current-voltage converter (23), and equation (2) pb is the current-voltage conversion efficiency of the current-voltage converter (24). I'll leave it here. P 1' and P 2/ are the photodetector light receiving surface (2
2a) is the input optical signal to (22b), which is converted into (1)
Substituting into formula (2), Pl'= T3t a Pa + Tbt * P
b (5) Pz'= Ta2@Pa + T
bz @ Pb (can be expressed as 61. In the above equation (31 (41), Kβ=, βa=, p
b, and the above formula (51 (61), Tax −T
a2, and by performing the calculations (5) - (6), Pl' - P2' = (Tbt - Tbz)φpbT
b1 - Tbz = Kz ・ (Pt - P2) (7), and LDb
The optical output pb of is determined by the proportionality constant 2 and the current-voltage converter (2
3) and the output signal P2 of the current-voltage converter (24). Therefore, regardless of the optical output Pa of LDa.

LDbの光出力pbが検出でき、レーザ駆動回路(30
b)によってLDbの光出力pbを一定値に制御するこ
とができる。
The optical output pb of LDb can be detected, and the laser drive circuit (30
By b), the optical output pb of the LDb can be controlled to a constant value.

次K 、(71式と(2)式により KsIIP2 − K2・pb となり、LDaの光出力Paは比例定数” eK12お
よび増幅器(28)の出力信号pbと電流電圧変換器(
24)の出力信号P2の演算で検出される。従って、増
幅器(26)および(29)の増幅度Ks、Kgをそれ
ぞれ(in(11)式の値となるように調整し、差動増
幅器(27)で演算を行うことKよってLDaの光出力
Paが検出でき、レーザ駆動回路(30a)によってL
Daの光出力Paを一定値に制御できる。
The next K, (KsIIP2 − K2・pb according to equations 71 and (2), and the optical output Pa of the LDa is determined by the proportionality constant "eK12", the output signal pb of the amplifier (28), and the current-voltage converter (
24) is detected by calculating the output signal P2. Therefore, the amplification degrees Ks and Kg of the amplifiers (26) and (29) are adjusted to the values of (in (11)), respectively, and the calculation is performed using the differential amplifier (27). Pa can be detected, and the laser drive circuit (30a)
The optical output Pa of Da can be controlled to a constant value.

以上の演算によって、半導体レーザアレイ(6)の光源
LDa、Lpbの光出力を各別に検出でき独立に駆動す
ることができる。
By the above calculation, the optical outputs of the light sources LDa and Lpb of the semiconductor laser array (6) can be detected separately and driven independently.

なお、上記実施例では、条件として Ta1=Ta2 Tb1 @ Tbz であるとしたが、 であっても TaI    Tbt が成り立てばよ<、(12)式、(13)式の条件下で
は、電流電圧変換器(23)および(24)の電流電圧
変換効率にβaおよびにβbが。
In the above embodiment, the condition is Ta1=Ta2 Tb1 @Tbz, but even if TaI Tbt holds, under the conditions of equations (12) and (13), current-voltage conversion βa and βb are the current-voltage conversion efficiencies of the devices (23) and (24).

Ta1IIKβ3 = Ta2−に/b−” (15)
なる関係式を満足するように設定するか、石しくは、K
/a=にβbとし、電流電圧変換器(23)と増幅器(
25)の間に増幅度KOの増幅器を挿入し、Tat@K
o = Tax      ・−・(16)が成り立つ
ようにKOを調整すれば、上記実施例と同様の効果を奏
する。
Ta1IIKβ3 = Ta2-/b-” (15)
Either set it so that it satisfies the relational expression, or, more precisely, K
/a=βb, current-voltage converter (23) and amplifier (
25), insert an amplifier with amplification degree KO between
If KO is adjusted so that o=Tax (16) holds true, the same effects as in the above embodiment can be achieved.

また、上記実施例では複数個の半導体レーザ光源として
アレイ構造のものを示したが、単一の発光源を同一の発
光部(17)内に近接させて配貨したハイブリッド型の
ものであってもよい。
Furthermore, in the above embodiment, an array structure is shown as a plurality of semiconductor laser light sources, but a hybrid type in which a single light emitting source is placed close to each other within the same light emitting section (17) is used. Good too.

また、上記実施例では2分割光検知器(22)で前方光
(12a)(12b)を受光するためにビームスプリッ
タ(20)を用いたが、他の実施例として示した第3図
の構成であってもよい。第3図において、発光部(17
)、コリメータレンズ(19)、前方光(12a)(1
2b)、レンズ(21)、第2の光検知器(22)は第
1図のものと同じものである。
Further, in the above embodiment, a beam splitter (20) was used in order to receive the forward light (12a) (12b) with the two-split photodetector (22), but the configuration shown in FIG. 3 as another embodiment is shown in FIG. It may be. In FIG. 3, the light emitting part (17
), collimator lens (19), forward light (12a) (1
2b), the lens (21) and the second photodetector (22) are the same as in FIG.

コリメータレンズ(19)の出射側に配設されたビーム
整形プリズム(34)は、その斜面(34a’lで前方
光(12a)(12b)を屈折透過させることKよって
、本来楕円状の断面強度分布を示す半導体レーザの光束
を等方向な断面強度分布Kf換するように作用する。ビ
ーム整形プリズム(34)の斜面(34a)においては
、前述した屈折して透過する成分以外に、斜面(34a
)で反射する成分であるため、斜面(34a)の反射方
向にレンズ(21)、第2の光検知器(22)を順次配
設し、斜面(34a)で反射した前方光(12a)(1
2b)を受光し検出することKよって、第1図に示す実
施例と同様の効果を奏する。
The beam shaping prism (34) disposed on the output side of the collimator lens (19) refracts and transmits the forward light (12a) (12b) at its slope (34a'l), so that the beam shaping prism (34) has an originally elliptical cross-sectional intensity. The beam shaping prism (34) acts to convert the light beam of the semiconductor laser showing a distribution into an isodirectional cross-sectional intensity distribution Kf.
), a lens (21) and a second photodetector (22) are sequentially arranged in the reflection direction of the slope (34a) to detect the forward light (12a) ( 1
By receiving and detecting light 2b), the same effect as the embodiment shown in FIG. 1 can be achieved.

また、上記各実施例においては、前方光(12a)(1
2b’lを収束させて2分割光検知器(22)で受光す
る構成をとったが、別の実施例として第4図に示すよう
に、レンズ(21)は省略し、平行光束のまま2分割光
検知器(22)で受光してもよい。
Further, in each of the above embodiments, the forward light (12a) (1
2b'l is converged and received by the two-split photodetector (22), but in another embodiment, as shown in FIG. The light may be received by a split photodetector (22).

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明は、複数個の半導体レーザ光源
からの複数の前方光を一括して受光する2分割光検知器
を設け、上記2分割光検知器からの2つの検出信号のう
ち、複数個の半纏体レーザ光源のどちらか一方の光源か
らの成分を一致させる手段と、2つの受光面からの出力
信号を演算する手段によって、複数個の半導体レーザ光
源の光出力を各別に検出するようにしたので、複数の光
ビームを分離する光学系が不要となり、敵しい位含精度
が不要となる。これにより安価でf産性に冨んだ装置が
得られる効果がある。
As described above, the present invention provides a two-split photodetector that collectively receives a plurality of forward lights from a plurality of semiconductor laser light sources, and of the two detection signals from the two-split photodetector, The light outputs of the plurality of semiconductor laser light sources are detected separately by means of matching the components from one of the plurality of semi-integrated laser light sources and by means of calculating the output signals from the two light receiving surfaces. This eliminates the need for an optical system for separating a plurality of light beams, and eliminates the need for high precision. This has the effect of providing an inexpensive and highly productive device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例の光路図、第2図は第1図
のものの作用を説明するための結線図、第3図、第4図
はそれぞれ他の実施例の一部光路図、第5図は従来の半
導体レーザ駆動装置の側断面図である。 (6)−−半導体レーザアレイ、(12a)(12b)
・・前方光、(20)・・ビームスプリッタ(光学的手
段)、(22)・・2分割光検知器、[(23)(24
)・拳電流電圧変換器、(25)(27)・・差動増幅
器、(2i(28)(29)−・増幅器、〕φ・演算回
路手段。 なお、各図中、同一符号は同−又は相当部分を示す。
Fig. 1 is an optical path diagram of one embodiment of this invention, Fig. 2 is a connection diagram for explaining the operation of the one shown in Fig. 1, and Figs. 3 and 4 are partial optical path diagrams of other embodiments. , FIG. 5 is a side sectional view of a conventional semiconductor laser driving device. (6) -- Semiconductor laser array, (12a) (12b)
...Front light, (20)...Beam splitter (optical means), (22)...Two-split photodetector, [(23) (24
)・Fist current voltage converter, (25)(27)・・Differential amplifier, (2i(28)(29)−・amplifier,]φ・Operation circuit means. In each figure, the same reference numerals are the same − or a corresponding portion.

Claims (1)

【特許請求の範囲】[Claims] 複数個の半導体レーザ光源からなる半導体レーザと、こ
の複数個の半導体レーザの複数の前方光を任意の割合で
2分する光学的手段と、この光学的手段で2分された前
記複数の前方光を含む光束のうちの一方を一括して受光
する2分割光検知器と、この2分割光検知器で検出され
た光出力信号において前記複数の半導体レーザ光源のう
ちの一方の光出力信号を一致させる手段とを備え、かつ
、前記2分割光検知器で検出された光出力信号に基いて
前記複数の半導体レーザ光源の各別の光出力を検出する
演算回路手段とを備えてなる半導体レーザ駆動装置。
A semiconductor laser comprising a plurality of semiconductor laser light sources, an optical means for dividing a plurality of forward lights of the plurality of semiconductor lasers into two at an arbitrary ratio, and the plurality of forward lights divided into two by the optical means. a two-split photodetector that collectively receives one of the light beams including the two-split photodetector, and a light output signal detected by the two-split photodetector that matches the light output signal of one of the plurality of semiconductor laser light sources. and arithmetic circuit means for detecting the respective optical outputs of the plurality of semiconductor laser light sources based on the optical output signals detected by the two-split photodetector. Device.
JP63158070A 1988-06-22 1988-06-28 Semiconductor laser drive Expired - Fee Related JPH07118085B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63158070A JPH07118085B2 (en) 1988-06-28 1988-06-28 Semiconductor laser drive
US07/368,034 US4942584A (en) 1988-06-22 1989-06-16 Semiconductor laser apparatus driving system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63158070A JPH07118085B2 (en) 1988-06-28 1988-06-28 Semiconductor laser drive

Publications (2)

Publication Number Publication Date
JPH029026A true JPH029026A (en) 1990-01-12
JPH07118085B2 JPH07118085B2 (en) 1995-12-18

Family

ID=15663644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63158070A Expired - Fee Related JPH07118085B2 (en) 1988-06-22 1988-06-28 Semiconductor laser drive

Country Status (1)

Country Link
JP (1) JPH07118085B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457382A (en) * 1990-06-27 1992-02-25 Nec Home Electron Ltd Laser diode device
JPH05210846A (en) * 1991-10-28 1993-08-20 Internatl Business Mach Corp <Ibm> Multi-beam optical system and method of measuring beam power used for said system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457382A (en) * 1990-06-27 1992-02-25 Nec Home Electron Ltd Laser diode device
JPH05210846A (en) * 1991-10-28 1993-08-20 Internatl Business Mach Corp <Ibm> Multi-beam optical system and method of measuring beam power used for said system

Also Published As

Publication number Publication date
JPH07118085B2 (en) 1995-12-18

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