JPH0290062A - Probe card - Google Patents

Abstract

PURPOSE:To make it possible to obtain stabilized conduction without damaging electrodes even if there is dispersion in heights between the electrodes of a semiconductor element or the surfaces of the electrodes by providing the expanding and contracting functions of spiral springs at the tips of probes. CONSTITUTION:Probes 2 and 3 are fixed to a probe card board 1 with probe supporting plates 4. Meanwhile, tip parts 2a and 3a are wound and formed in spiral spring shapes. When the board 1 is brought close to a semiconductor element die 7, at first, one tip part 3a is brought into contact with a high electrode 6. Since the height of an electrode 5 is low, the other tip part 2a cannot come to contact with the electrode 5. When the board 1 is further lowered, the tip part can come to contact with the electrode 5. At this time, the tip part 3a which is in contact with the electrode 6 is contracted in the winding pattern of the spiral spring, and conduction with the electrode 6 is maintained under the constant pressure. Therefore, the electric characteristics of the die 7 can be measured without damaging the electrodes.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a probe card for electrical measurements of semiconductor devices.

[Conventional technology]

In the manufacturing process of semiconductor devices, after completing the so-called wafer processing step, there is a step of measuring whether each die in the form of a silicon wafer has desired electrical characteristics.
At this time, the connection between the measuring device and the die is obtained by bringing a probe called a probe card into contact with the electrode of the die.

One of these conventional techniques, as shown in FIG. 4, holds probes 2 and 3 from a probe card board 1 through a probe support plate 4, and connects the tips 2b and 3b of the probes to electrodes on a semiconductor element diamond. The structure is such that conduction is established by contacting the probe card 5.6, and electrical characteristics are measured on or outside the probe card board 1.

[Problem to be solved by the invention]

However, in the conventional probe card described above, the tips 2b and 3b of the probes 2 and 3 are on a straight line, so it is not possible to form a bump on the die like in semiconductor devices manufactured by TABI, which are often used in recent years. However, it has the disadvantage that the contact between the bump electrode and the probe tips 2b and 3b tends to be incomplete, making it difficult to obtain continuity. That is, if the electrodes 5 and 6 of the semiconductor element diamond have a bump structure as shown in FIG. It may be difficult to establish continuity with the electrode 5. At this time, if the probe card board 1 is further pushed down in an attempt to bring the tip 2b of the probe into contact with the lower electrode, the tip 3b of the probe may damage the electrode.

SUMMARY OF THE INVENTION In view of the above circumstances, an object of the present invention is to provide a probe card that can accurately perform electrical measurements of semiconductor element dies on a wafer having bump electrodes.

(Means for Solving the Problems) According to the present invention, a probe card used for electrical measurement of a semiconductor device in a wafer state has a telescopic function in which the tip of a probe element in contact with an electrode of the semiconductor device is wound into a spiral shape. and a probe having the following.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

1 and 2 are respectively a cross-sectional structure diagram of a probe card showing an embodiment of the present invention, and a cross-sectional view showing one usage state of the probe card. According to the present embodiment, probes 2, 3, is fixed to the probe card board 1 by the probe support plate 4, while its tip portions 2a, 3a
is formed into a spiral-wound structure. Now, when this probe card board 1 is brought close to the semiconductor element diamond, first, one tip 3a comes into contact with the tall electrode 6, but the other tip 2a comes into contact with the electrode 5, which is low in height. becomes unable to do so. In this case, the probe
When the card board 1 is further lowered, as shown in FIG. 5. At this time, the probe tip 3a on the electrode 6 that was in contact with the electrode 6 contracts like a winding spring and maintains continuity with the electrode 6 with a constant pressure, so the electrical characteristics of the diamond can be maintained without damaging the electrode. It becomes possible to measure.

FIG. 3 is a sectional view of the tip of a probe showing another embodiment of the present invention. According to this embodiment, the tips of the probes 2 and 3 are provided with two or more spiral-shaped extensible parts 9 and 10. As shown in this embodiment, even if the surface of the electrode 5 or 6 of the semiconductor element die does not have a uniform height, one of the spiral-shaped expansion and contraction parts 9 and 10 can be easily Since it is possible to make contact, there is an advantage that more stable conduction can be obtained for measurement.

〔Effect of the invention〕

As explained above, according to the present invention, the tip of the probe is provided with a spring-like expansion and contraction function, so that even if there are variations in height between the electrodes of a semiconductor element or on the surface within the electrodes, the electrodes can be Since it becomes possible to obtain stable conduction without damage, it is possible to prevent a decrease in yield due to misidentification of characteristic values based on imperfect measurement techniques, which has conventionally occurred.

A cross-sectional structural diagram of a probe tip showing another embodiment of the invention,
FIGS. 4 and 5 are a cross-sectional structural view showing the structure of a conventional probe card and a cross-sectional structural view showing one state of use thereof, respectively.

DESCRIPTION OF SYMBOLS 1... Probe card board, 2.3... Probe, 2a, 3a, 9.10... Spring-shaped extension and contraction part of the probe tip, 4... Probe support plate, 5, 6... Semiconductor Element electrode, 7... semiconductor element die.

Claims (1)

[Claims] A probe card used for electrical measurement of a semiconductor device in a wafer state, characterized in that the probe card is equipped with a probe having a telescoping function in which the tip of a probe element in contact with an electrode of the semiconductor device is wound into a spiral shape.