JPH028363A - Sputtering target and its production - Google Patents
Sputtering target and its productionInfo
- Publication number
- JPH028363A JPH028363A JP15710188A JP15710188A JPH028363A JP H028363 A JPH028363 A JP H028363A JP 15710188 A JP15710188 A JP 15710188A JP 15710188 A JP15710188 A JP 15710188A JP H028363 A JPH028363 A JP H028363A
- Authority
- JP
- Japan
- Prior art keywords
- lower layer
- dielectric material
- sputtering target
- layer
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000003989 dielectric material Substances 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000008602 contraction Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 229910000846 In alloy Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000001018 Hibiscus sabdariffa Nutrition 0.000 description 1
- 235000005291 Rumex acetosa Nutrition 0.000 description 1
- 240000007001 Rumex acetosella Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 235000003513 sheep sorrel Nutrition 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は誘電体薄膜の形成に用いられるスパッタ用ター
ゲット及びその製造方法に関するものでである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sputtering target used for forming a dielectric thin film and a method for manufacturing the same.
従来の技術
誘電体薄膜の形成に用いられるスパッタ用ターゲットは
広く一般に使用されているが、その多くは粉末状の誘電
体材料をホットプレスあるいは冷間静水圧プレス後に焼
結する方法で加圧、加熱成型によって製造されている。Conventional technology Sputtering targets used to form dielectric thin films are widely used, but most of them are made by pressurizing powdered dielectric material by hot pressing or cold isostatic pressing followed by sintering. Manufactured by heat molding.
これらのターゲットを実際に使用する場合は、バッキン
グプレー１・に強固に固定し、スパッタ時に発生する熱
を速やかに放散させるためにＩｎ合金等の金属によるボ
ンディングを行うことが望ましい。When these targets are actually used, it is desirable to firmly fix them to the backing plate 1 and bond them with a metal such as an In alloy in order to quickly dissipate the heat generated during sputtering.
しかし、−船釣に誘電体材料はＩｎ合金等のぬれ性が比
較的悪く、特に複数の誘電体材料を混合したターゲット
は充填率が低いものが多くＩｎ合金等のぬれ性は更に悪
（なるものである。このぬれ性が悪い場合、ボンディン
グの強度は弱くなりターケントの冷却効率も低下するた
め、スパッタ電力を大きくすると異常放電や、ターゲッ
トの割れ等が発生しやすいものであった。However, the wettability of dielectric materials used for boat fishing, such as In alloys, is relatively poor, and targets made of a mixture of multiple dielectric materials often have a low filling rate, and the wettability of In alloys, etc., is even worse. If this wettability is poor, the bonding strength will be weakened and the cooling efficiency of the target will also be reduced, so if the sputtering power is increased, abnormal discharge and cracking of the target are likely to occur.
発明が解決しようとする課題
従来この様なクーゲラ１−を使用する場合にはターゲッ
トのボンディングを行う面にスパッタ等の方法で金属薄
膜を形成した後に、バッキングプレートに対してＩｎ合
金等の金属によるボンディングを行ってボンディングの
強度及び冷却効率の向上を図る場合が多かった。Problems to be Solved by the Invention Conventionally, when using such a Kugela 1-, a thin metal film is formed on the bonding surface of the target by a method such as sputtering, and then a thin metal film such as an In alloy is formed on the backing plate. Bonding was often performed to improve the bonding strength and cooling efficiency.
しかしながらこのようにターゲットのボンディング面に
金属薄膜を形成する工程を必要とするため、生産性の低
下、コスト上昇を伴なうという問題があった。However, since this method requires a step of forming a metal thin film on the bonding surface of the target, there are problems in that productivity is reduced and costs are increased.
本発明は誘電体材料のターケントであっても、スバ・ツ
タ等での金属薄膜の形成等前処理を行なわずにＩｎ合金
等の金属でボンディングを可能にしボンディング強度が
強く、冷却効率の高いスパッタ用り−ゲノ）−及びその
製造方法を提供することを目的とする。The present invention enables bonding with metals such as In alloys without pre-treatment such as forming a metal thin film with sorrel or ivy, even if the dielectric material is tarquent. The purpose of the present invention is to provide a method for producing the same.
課題を解決するための手段
本発明は上記問題点を解決するためにスパッタ用ターゲ
ットを誘電体材料から成る上層と少なくとも１ヶ以上の
孔を有する下層から成り、前記上層と下層の境界領域は
上層の誘電体材料が前記孔に入り込むように構成したも
のである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a sputtering target consisting of an upper layer made of a dielectric material and a lower layer having at least one hole, and the boundary area between the upper layer and the lower layer is formed in the upper layer. The dielectric material is configured to fit into the hole.
作用
すなわち本発明の作用は次の様になる。誘電体材料と孔
を有する下層とを１体的に成型することにより、バッキ
ングプレートに対してＩｎ合金等の金属によるホンディ
ングを行う時のホンディング強度を向上さセ、冷却効率
も高く簡易な方法で生産性に優れた安価なスパッタ用タ
ーゲットが得られるものである。The operation, that is, the operation of the present invention is as follows. By integrally molding the dielectric material and the lower layer with holes, the bonding strength is improved when bonding metal such as In alloy to the backing plate, and the cooling efficiency is high and simple. By this method, an inexpensive sputtering target with excellent productivity can be obtained.
実施例 以上本発明の一実施例を図面に基づいて説明する。Example An embodiment of the present invention will be described above based on the drawings.
第１図は本発明の一実施例におけるスパッタ用ターゲッ
トの構造を示す断面図である。１は上層でＺｎ５Ｏ中に
ＳｉＯ□をほぼ均一に分散させたものでありその厚さは
約５ ｍｍである。２はテーパ状の孔を有した下層であ
る。この下層２の材質としては熱伝導率の高い材質が望
ましい。本実施例ではＣｕを用いている。上層１と下層
２の境界領域は第２図に示すように、上層１の誘電体材
料が下層２のテーバ状の孔に入り込み、がっテーパ状の
穴は下側が大きく上側は小さくなるように設けであるた
め、上層１と下層２は強固に結合されるものである。こ
こで下層に設けたテーバ状の孔２ａの小開孔部の全周は
９面取り処理２ｂを行っている。この処理の目的はプレ
ス成型時とスパッタパヮーのＯＮ、ＯＦＦに伴なう膨張
、収縮による応力の集中をやわらげるためである。また
孔数が多くなると下層１と下層２の結合力は大きくなる
が、ボンディング時にバッキングプレートとの接触面積
が小さくなり、ボンディング強度と冷却効率は低下する
。そのため孔の開孔面積の和が下層の面積の３０〜６０
％の範囲になるようにするのが好ましい。FIG. 1 is a sectional view showing the structure of a sputtering target in an embodiment of the present invention. 1 is an upper layer in which SiO□ is almost uniformly dispersed in Zn5O, and its thickness is about 5 mm. 2 is a lower layer having tapered holes. The material for the lower layer 2 is preferably a material with high thermal conductivity. In this embodiment, Cu is used. As shown in Figure 2, the boundary area between the upper layer 1 and the lower layer 2 is such that the dielectric material of the upper layer 1 enters the tapered hole of the lower layer 2, and the tapered hole is larger on the lower side and smaller on the upper side. Because of this structure, the upper layer 1 and the lower layer 2 are firmly connected. Here, the entire circumference of the small opening of the tapered hole 2a provided in the lower layer is subjected to a nine-chamfering process 2b. The purpose of this treatment is to relieve stress concentration due to expansion and contraction during press molding and when the sputtering power is turned on and off. Further, as the number of holes increases, the bonding force between the lower layer 1 and the lower layer 2 increases, but the contact area with the backing plate during bonding decreases, and the bonding strength and cooling efficiency decrease. Therefore, the sum of the opening areas of the holes is 30 to 60 times the area of the lower layer.
% range.
このターゲットの具体的な製造方法を第３図を用いて説
明する。第３図において４は下型、５は１型、６は円筒
型である。クーゲラｉ・の製造に当ってまず円筒型６の
内径より若干率さい径の下層２を孔２ａの孔径の小さい
方を上側にして下型４の上に乗せ、円筒型６を装着する
。この状態で」二層１となる誘電体材料の粉末を下層２
の上にほぼ均一に広げることにより、粉末状の誘電体材
料の一部は孔２ａの中に入り込んだ状態となる。そして
更に下型４、円筒型６に振動を与えれば効率よく粉末の
誘電体材料は、孔２ａの中に入り込んだ状態にすること
ができる。この様な状態で上型５を装着して圧力２００
ｋｍ／ｃ＋ｆｌ、加熱温度約１００″Ｃのホットプレ
スを行うことによって、誘電体材料から成る上層１と下
層２が１体的に形成されたターゲットを得ることができ
るものである。A specific method for manufacturing this target will be explained with reference to FIG. In FIG. 3, 4 is a lower mold, 5 is a first mold, and 6 is a cylindrical mold. In manufacturing Kugera i, first, the lower layer 2 having a diameter slightly smaller than the inner diameter of the cylindrical mold 6 is placed on the lower mold 4 with the hole 2a having the smaller diameter facing upward, and the cylindrical mold 6 is attached. In this state, add the dielectric material powder that will become the second layer 1 to the lower layer 2.
By spreading it almost uniformly over the top, a portion of the powdered dielectric material enters into the hole 2a. Further, by applying vibration to the lower mold 4 and the cylindrical mold 6, the powdered dielectric material can be efficiently penetrated into the holes 2a. In this state, attach the upper mold 5 and increase the pressure to 200.
By performing hot pressing at km/c+fl and heating temperature of about 100''C, a target in which the upper layer 1 and the lower layer 2 made of dielectric material are integrally formed can be obtained.
この様にして成型されたクーゲラ１−を下層２をボンデ
ィング面としてＩｎ−３ｎ合金で銅製のバッキングプレ
ートにボンディングし、ＡｒガスによるＲＦマグネトロ
ンスパックを行ったところ、直径φｌ ５０ ｍｍのり
一ケノトに対して１．５Ｋｗの電力を投入しても安定に
成膜を行うことが可能であった。この結果はターゲット
のボンディング面にスバ、夕等で金属薄膜を形成してＩ
ｎ−３ｎ合金を用いてボンディングを行ったものと同等
、もしくはそれ以上のボンディング強度及び冷却効率を
有することを示している。When the Kugela 1- molded in this way was bonded to a copper backing plate using In-3n alloy with the lower layer 2 as the bonding surface, and RF magnetron spacing was performed using Ar gas, it was found that It was possible to stably form a film even when a power of 1.5 Kw was applied. This result shows that a thin metal film is formed on the bonding surface of the target using a method such as Suba, Yu, etc.
This shows that the bonding strength and cooling efficiency are equal to or higher than those obtained by bonding using an n-3n alloy.
本実施例では誘電体材料として、ＺｎＳと５ｉｎ２の混
合物を用いたが他の誘電体材料にも適用できろものであ
る。In this embodiment, a mixture of ZnS and 5in2 was used as the dielectric material, but other dielectric materials may also be used.
また下層の材質も特にＣｕに限定されるものでなく、熱
伝導率が高い材料であればよい。Further, the material of the lower layer is not particularly limited to Cu, and any material having high thermal conductivity may be used.
また下層２に設けた孔は円形に限るものでなく他の形状
、例えば矩形であってもよい。Furthermore, the holes provided in the lower layer 2 are not limited to circular shapes, but may have other shapes, such as rectangular shapes.
また本実施例におＬＪるターゲットはホットプレスによ
って製造したが、冷静水圧プレスの後に焼結することに
よっ一ζ製造してもよい。Furthermore, although the LJ target in this example was manufactured by hot pressing, it may also be manufactured by sintering after cold hydraulic pressing.
発明の効果
本発明は誘電体材１−１とテーバ状の孔を有する下グ面
への金属薄膜の形成等の前処理を行うことなく、充分な
ボンディング強度と冷却効率を有する金属ボンディング
が可能なスパッタ用ターゲットを得ることができる。Effects of the Invention The present invention enables metal bonding with sufficient bonding strength and cooling efficiency without performing pretreatment such as forming a metal thin film on the dielectric material 1-1 and the lower surface having tapered holes. A sputtering target can be obtained.
第１図は本発明の一実施例を示すスバンタ用ターゲット
の断面図、第２図は、第１図で示したターゲットの上層
と下層との境界領域の状態を示す部分詳細図、第３図は
本発明の一実施例を示すスパッタ用ターゲットの製造方
法を示す断面図である。
１・・・・・・上層、２・・・・・・下層、２ａ・・・
・・・孔、３・・・・・・境界領域。FIG. 1 is a sectional view of a Svanta target showing an embodiment of the present invention, FIG. 2 is a partially detailed view showing the state of the boundary area between the upper and lower layers of the target shown in FIG. 1, and FIG. 1 is a sectional view showing a method of manufacturing a sputtering target according to an embodiment of the present invention. 1...upper layer, 2...lower layer, 2a...
...hole, 3...boundary area.
Claims (5)
孔を有する下層から成り前記上層と下層の境界領域は前
記誘電体材料が前記下層に設けた孔に入り込んだスパッ
タ用ターゲット。(1) A sputtering target consisting of an upper layer made of a dielectric material and a lower layer having at least one hole, in which the dielectric material enters the hole provided in the lower layer in the boundary area between the upper layer and the lower layer.
に向かって小さくなるようテーパ状に形成した請求項（
１）記載のスパッタ用ターゲット。(2) A claim in which the shape of the hole provided in the lower layer is tapered so that it becomes smaller from the lower surface to the upper surface of the lower layer.
1) Sputtering target described above.
面取り処理した請求項（１）、（２）のいずれかに記載
のスパッタ用ターゲット。(3) The entire circumference of the small opening of the tapered hole provided in the lower layer is R.
The sputtering target according to any one of claims (1) and (2), which is chamfered.
の面積の３０〜６０％の範囲に構成された請求項（１）
から（３）のいずれかに記載のスパッタ用ターゲット。(4) Claim (1) wherein the sum of the areas of the upper openings of the holes provided in the lower layer is in the range of 30 to 60% of the area of the entire lower layer.
The sputtering target according to any one of (3) to (3).
体材料を配置し、加圧、加熱成型するスパッタ用ターゲ
ットの製造方法。(5) A method for producing a sputtering target, in which a dielectric material is placed on a lower layer having at least one hole, and the dielectric material is pressurized and heat-molded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15710188A JPH028363A (en) | 1988-06-24 | 1988-06-24 | Sputtering target and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15710188A JPH028363A (en) | 1988-06-24 | 1988-06-24 | Sputtering target and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028363A true JPH028363A (en) | 1990-01-11 |
Family
ID=15642257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15710188A Pending JPH028363A (en) | 1988-06-24 | 1988-06-24 | Sputtering target and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028363A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012145895A1 (en) * | 2011-04-26 | 2012-11-01 | Chang Sheng-Chang | Method of manufacturing cigs solar energy photoelectric quaternary sputtering target, method of bonding the same with target backing plate, and method of supplementing material thereof |
-
1988
- 1988-06-24 JP JP15710188A patent/JPH028363A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012145895A1 (en) * | 2011-04-26 | 2012-11-01 | Chang Sheng-Chang | Method of manufacturing cigs solar energy photoelectric quaternary sputtering target, method of bonding the same with target backing plate, and method of supplementing material thereof |
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