JPH02190470A - Sputtering target and its production - Google Patents
Sputtering target and its productionInfo
- Publication number
- JPH02190470A JPH02190470A JP720589A JP720589A JPH02190470A JP H02190470 A JPH02190470 A JP H02190470A JP 720589 A JP720589 A JP 720589A JP 720589 A JP720589 A JP 720589A JP H02190470 A JPH02190470 A JP H02190470A
- Authority
- JP
- Japan
- Prior art keywords
- lower layer
- target
- sputtering target
- layer
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000003989 dielectric material Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000004804 winding Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 229910000846 In alloy Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は誘電体薄膜の形成に用いられるスパッタ用ター
ゲット及びその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sputtering target used for forming a dielectric thin film and a method for manufacturing the same.
従来の技術
誘電体薄膜の形成に用いられるスパッタ用ターゲットは
広く一般的に使用されているが、その多くは粉末状の誘
電体材料をホットプレス、あるいは冷間静水圧プレス後
に焼結する方法で加圧、加熱成型によって製造されてい
る。これらのターゲットを実際に使用する場合はバッキ
ングプレートに強固に固定し、スパッタ時に発生する熱
を速みやかに放散させるためにＩｎ合金等の金属による
ボンディングを行うことが望ましい。Conventional technology Sputtering targets used to form dielectric thin films are widely used, but most of them are made by hot-pressing powdered dielectric material or by cold isostatic pressing followed by sintering. Manufactured by pressurization and heat molding. When these targets are actually used, it is desirable to firmly fix them to a backing plate and bond them with a metal such as an In alloy in order to quickly dissipate the heat generated during sputtering.
しかし−量的に誘電体材料はＩｎ合金等のぬれ性が比較
的悪く特に複数の誘電体材料を混合したターゲットは充
填率が低いものが多（、Ｉｎ合金等のぬれ性は更に悪く
なるものである。このぬれ性が悪い場合、ボンディング
の強度は弱くなり、ターゲットの冷却効率も低下するた
めスパッタ電力を大きくすると異常放電や、ターゲット
の割れ等が発生しやすいものであった。However, in terms of quantity, dielectric materials such as In alloys have relatively poor wettability, especially targets that are a mixture of multiple dielectric materials, which often have a low filling rate (although the wettability of In alloys, etc. is even worse). If this wettability is poor, the bonding strength becomes weak and the cooling efficiency of the target decreases, so that when the sputtering power is increased, abnormal discharge and cracking of the target are likely to occur.
発明が解決しようとする課題
従来この様なターゲットを使用する場合にはターゲット
のボンディングを行う面にスパッタ等の方法で金属薄膜
を形成した後に、バッキングプレートに対してＩｎ合金
等の金属によるボンディングを行ってボンディングの強
度及び冷却効率の向上を図る場合が多かった。Problems to be Solved by the Invention Conventionally, when using such a target, a thin metal film is formed on the bonding surface of the target by a method such as sputtering, and then bonding with a metal such as an In alloy is performed on the backing plate. In many cases, this was done to improve bonding strength and cooling efficiency.
しかしながらこのようにターゲットのボンディング面に
金属薄膜を形成する工程を必要とするため、生産性の低
下、コスト上昇を伴なうという問題があった。However, since this method requires a step of forming a metal thin film on the bonding surface of the target, there are problems in that productivity is reduced and costs are increased.
本発明は誘電体材料のターゲットであっても、スパッタ
等で金属薄膜の形成等の前処理を行なわずにＩｎ合金等
の金属でボンディングを可能にし、ボンディング強度が
強く、冷却効率の高いスパッタ用ターゲット及びその製
造方法を提供することを目的とする。The present invention enables bonding with metals such as In alloys even when the target is a dielectric material, without performing pretreatment such as forming a metal thin film by sputtering, etc., and is suitable for sputtering with strong bonding strength and high cooling efficiency. The purpose of this invention is to provide a target and a method for manufacturing the same.
課題を解決するための手段
本発明は上記問題点を解決するためにスパッタ用ターゲ
ットを誘電体材料から成る上層とスパイラル状に巻かれ
た下層から成り、前記上層と、下層の境界領域は上層の
誘電体材料が、前記スパイラル状に巻かれた下層の巻線
の間に入り込む用に構成したものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a sputtering target consisting of an upper layer made of a dielectric material and a spirally wound lower layer, and the boundary area between the upper layer and the lower layer is the upper layer. The dielectric material is configured to fit between the spirally wound lower layer windings.
作用
本発明は誘電体材料とスパイラル状に巻かれた下層とを
一体的に成型することにより、バッキングプレートに対
してＩｎ合金等の金属によるボンディングを行う時のボ
ンディング強度を向上させ、冷却効率も高←簡易な方法
で生産性に優れた安価なスパッタターゲットが得られる
ものである。Function The present invention improves the bonding strength when bonding metal such as In alloy to the backing plate by integrally molding the dielectric material and the spirally wound lower layer, and also improves the cooling efficiency. It is possible to obtain an inexpensive sputtering target with excellent productivity using a simple method.
実施例
以下本発明の一実施例を図面に基づいて説明する。第１
図は本発明の一実施例におけるスパッタ用ターゲットの
構造を示す断面図である。１は上層でＺｎＳ中にＳｉＯ
□をほぼ均一に分散させたものでありその厚さは約６ｍ
ｍである。２はスパイラル状に巻かれた下層である。こ
の下層の材質としては熱伝導率の高いものが望ましい。EXAMPLE An example of the present invention will be described below based on the drawings. 1st
The figure is a sectional view showing the structure of a sputtering target in an embodiment of the present invention. 1 is the upper layer with SiO in ZnS
□ is dispersed almost uniformly, and its thickness is approximately 6 m.
It is m. 2 is a spirally wound lower layer. The material for this lower layer is preferably one with high thermal conductivity.
本実施例ではＣｕを用いている０巻線のすきまは０．１
〜５閣の範囲がよく好ましくは１〜２ＩＩＩ！１がよい
。また巻線の外径は大きくするとスパッタできる部分が
少なくなるため、できるだけ小さい方がよい０本発明で
は０．５〜２ｍの範囲になるようにしている。In this example, the clearance of the 0 winding using Cu is 0.1
The range of 5 to 5 is good, preferably 1 to 2III! 1 is good. In addition, if the outer diameter of the winding is increased, the area that can be sputtered will be reduced, so it is better to make it as small as possible.In the present invention, the outer diameter is set in the range of 0.5 to 2 m.
上層１と下層２の境界領域は第１図に示すように上層の
誘電体材料が下層のＳｖＡの間に入りこんでいるため、
上Ｎ１と下Ｎ２は強固に結合されるものである。In the boundary region between the upper layer 1 and the lower layer 2, as shown in FIG. 1, the upper layer dielectric material is inserted between the lower layer SvA,
The upper N1 and lower N2 are firmly connected.
次にこのターゲットの具体的な製造方法を第２図を用い
て説明する。第２図において４は下型、５は上型６は円
筒型である。ターゲットの製造に当って、まず円筒型６
の径より若干小さい径になるようスパイラル状に巻かれ
た下層を渦巻状に、あるいは同心状に巻いて乗せ１４円
筒型６を装着する。この状態で上層１となる粉末状の誘
電体材料を下層２の上にほぼ均一に広げることにより、
粉末状の誘電体材料の粉末の１部は、スパイラル状に巻
かれた下層２の巻線のピンチ間に入り込んだ状態となる
。そして更に下型４、円筒型６に振動を与えれば効率よ
く粉末状の誘電体材料は、前記下層の巻線のピッチ間に
入り込んだ状態にすることができるものである。このよ
うな状態で上型５を装着して圧力２００ｋｇ／ｅｔａ、
加熱温度約１００°Ｃのホットプレスを行うことによっ
て誘電体材料から成る上層１と下層２が一体的に形成さ
れたターゲットを得ることができるものである。Next, a specific method for manufacturing this target will be explained using FIG. 2. In FIG. 2, 4 is a lower mold, and 5 is an upper mold 6, which is cylindrical. When manufacturing the target, we first made a cylindrical type 6
The spirally wound lower layer is wound spirally or concentrically so as to have a diameter slightly smaller than the diameter of 14, and the cylindrical mold 6 is mounted thereon. In this state, by spreading the powdered dielectric material that will become the upper layer 1 almost uniformly on the lower layer 2,
A part of the powder of the powdered dielectric material enters between the pinches of the spirally wound lower layer 2 winding. Further, by applying vibrations to the lower mold 4 and the cylindrical mold 6, the powdered dielectric material can be efficiently caused to enter between the pitches of the lower layer winding. In this state, the upper mold 5 is installed and the pressure is 200 kg/eta.
By performing hot pressing at a heating temperature of approximately 100° C., a target in which an upper layer 1 and a lower layer 2 made of a dielectric material are integrally formed can be obtained.
このようにして成形されたターゲットを、下層２をボン
ディング面としてＩｎ−３部合金で銅製のバッキングプ
レートにボンディングし、ＡｒガスによるＲＦマグネト
ロンスパッタを行ったところ直径１５０ＩＩＩＩｌのタ
ーゲットに対して１．５部ｗの電力を投入しても安定に
薄膜形成を行うことが可能であった。この結果はターゲ
ットのボンディング面にスパッタ等で金属薄膜を形成し
てＩｎ−３部合金を用いてボンディングを行ったものと
同等のボンディング強度及び冷却効率を有することを示
している。The target formed in this manner was bonded to a copper backing plate using an In-tripart alloy with the lower layer 2 as the bonding surface, and RF magnetron sputtering was performed using Ar gas. It was possible to stably form a thin film even when power was applied to section w. This result shows that the bonding strength and cooling efficiency are equivalent to those obtained by forming a metal thin film on the bonding surface of the target by sputtering or the like and performing bonding using an In-tripart alloy.
本実施例では誘電体材料としてＺｎＳと５ｉ０２の混合
物を用いたが、他の誘電体材料にも適用できるものであ
る。また下層の材質も銅に限定されるものでなく、熱伝
導率が高く、巻線しやすい金属であればよい。In this example, a mixture of ZnS and 5i02 was used as the dielectric material, but other dielectric materials can also be used. Further, the material of the lower layer is not limited to copper, and any metal that has high thermal conductivity and is easy to wind can be used.
また本実施例におけるターゲットはホットプレスによっ
て製造したが、冷静水圧プレスの後に焼結することによ
って製造してもよい。Furthermore, although the target in this example was manufactured by hot pressing, it may also be manufactured by sintering after cold hydraulic pressing.
発明の効果
本発明は誘電体材料をスパイラル状に巻かれた下層と一
体的に成型することにより、ボンディング面への金属薄
膜の形成等の前処理を行うことな（充分なボンディング
強度と冷却効率を有する金属ボンディングが可能なスパ
ッタ用ターゲットを得ることができる。Effects of the Invention By molding the dielectric material integrally with the spirally wound lower layer, the present invention eliminates the need for pretreatment such as forming a metal thin film on the bonding surface (sufficient bonding strength and cooling efficiency). A sputtering target capable of metal bonding can be obtained.
第１図は本発明の一実施例を示すスパッタ用ターゲット
の断面図、第２図は本発明の一実施例におけるスパッタ
用ターゲットの製造方法を示す断面図である。
１・・・・・・上層、２・・・・・・下層、３・・・・
・・境界領域。FIG. 1 is a cross-sectional view of a sputtering target according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a method of manufacturing a sputtering target according to an embodiment of the present invention. 1...upper layer, 2...lower layer, 3...
...boundary area.
Claims (5)
た下層とから成り、前記上層と下層の境界領域は誘電体
材料が、前記スパイラル状に巻かれた下層の巻線の間に
入り込んだスパッタ用ターゲット。(1) Consisting of an upper layer made of a dielectric material and a spirally wound lower layer, the boundary area between the upper layer and the lower layer is such that the dielectric material enters between the windings of the spirally wound lower layer. Target for sputtering.
囲に巻かれた特許請求の範囲第１項記載のスパッタ用タ
ーゲット。(2) The sputtering target according to claim 1, wherein the lower layer winding is wound with a gap in the range of 0.1 to 0.5 mm.
成された特許請求の範囲第１項記載のスパッタ用ターゲ
ット。(3) The sputtering target according to claim 1, wherein the outer diameter of the lower layer winding is within the range of 0.5 to 2 mm.
０％以上にした特許請求の範囲第１項記載のスパッタ用
ターゲット。(4) The exposed area of the lower layer winding part is 3 of the bonding area
The sputtering target according to claim 1, wherein the sputtering target is 0% or more.
配置し、加圧、加熱成型するスパッタ用ターゲットの製
造方法。(5) A method for manufacturing a sputtering target, in which a dielectric material is placed on a spirally wound lower layer, and then pressurized and heated to form the material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP720589A JPH02190470A (en) | 1989-01-13 | 1989-01-13 | Sputtering target and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP720589A JPH02190470A (en) | 1989-01-13 | 1989-01-13 | Sputtering target and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02190470A true JPH02190470A (en) | 1990-07-26 |
Family
ID=11659520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP720589A Pending JPH02190470A (en) | 1989-01-13 | 1989-01-13 | Sputtering target and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02190470A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10138544B2 (en) | 2011-06-27 | 2018-11-27 | Soleras, LTd. | Sputtering target |
-
1989
- 1989-01-13 JP JP720589A patent/JPH02190470A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10138544B2 (en) | 2011-06-27 | 2018-11-27 | Soleras, LTd. | Sputtering target |
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