JPH0283237A - Production of chalcogenide glass - Google Patents
Production of chalcogenide glassInfo
- Publication number
- JPH0283237A JPH0283237A JP23560488A JP23560488A JPH0283237A JP H0283237 A JPH0283237 A JP H0283237A JP 23560488 A JP23560488 A JP 23560488A JP 23560488 A JP23560488 A JP 23560488A JP H0283237 A JPH0283237 A JP H0283237A
- Authority
- JP
- Japan
- Prior art keywords
- chalcogenide glass
- rseh
- silicate
- alkyl
- dry gel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000005387 chalcogenide glass Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 11
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910000058 selane Inorganic materials 0.000 claims abstract description 10
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 7
- 239000011669 selenium Substances 0.000 claims abstract description 7
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 5
- 238000006068 polycondensation reaction Methods 0.000 claims abstract description 4
- 150000004771 selenides Chemical class 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000013307 optical fiber Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 6
- STTNJYHKLLIMKB-UHFFFAOYSA-N $l^{1}-selanylethane Chemical compound CC[Se] STTNJYHKLLIMKB-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- KSLZNZZNAHIBHL-UHFFFAOYSA-N selanylidenesilicon Chemical compound [Se]=[Si] KSLZNZZNAHIBHL-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
- C03C1/006—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels to produce glass through wet route
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はゾル−ゲル法によるカルコゲナイドガラスを作
製する製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a manufacturing method for producing chalcogenide glass by a sol-gel method.
［従来の技術］
従来のカルコゲナイドガラスはＡｓやＰ系のＡｓｓ Ｓ
ｓ 、Ｐｇ Ｓｔ 、やＡ ｓ ｔ Ｓ ｅ ｚ、Ｐａ
Ｓｅｓ 、Ａｓａ Ｔｅｓ 、Ｐｔ Ｔｅｓであり、
Ｓｉ系のものはなかった。また、通常に、カルコゲナイ
ドガラスは、ＣＶＤやＭＯＣＶＤプロセスによって製造
しているため薄膜がほとんどである。[Conventional technology] Conventional chalcogenide glass is As or P-based AssS.
s, Pg St, and A s t S e z, Pa
Ses, Asa Tes, Pt Tes,
There was no Si-based material. Further, chalcogenide glass is usually manufactured by a CVD or MOCVD process, so that most of it is a thin film.
［発明が解決しようとする課題］
しかし、前述の従来技術では、薄膜の形成が主であるた
め、赤外線光ファイバーや各種の素子を形成するために
はバルク状のカルコゲナイドガラスが必要である。[Problems to be Solved by the Invention] However, since the above-mentioned prior art mainly involves the formation of thin films, bulk chalcogenide glass is required to form infrared optical fibers and various elements.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、バルク状のカルコゲナイドガラ
スの製造方法を提供するところにある。SUMMARY OF THE INVENTION The present invention aims to solve these problems, and its purpose is to provide a method for producing bulk chalcogenide glass.
〔課題を解決するための手段１
本発明のカルコゲナイドガラスの製造方法は、ＳｉＳｅ
２で示されるセレナイド物を以下の工程で作製すること
を特徴とする
ａ）四塩化ケイ素とＲＳｅＨの反応により下式で示され
るアルキルセレンシリケートとする工程。[Means for solving the problem 1 The method for producing chalcogenide glass of the present invention is based on SiSe
a) A step of producing an alkyl selenide silicate represented by the following formula by reacting silicon tetrachloride with RSeH.
Ｓｉ （ＳｅＲ）４ （ただし、Ｒはアルキル基を示
す）
ｂ）アルキルセレンシリケート−をＲＳｅＨのン容液に
しセレン化水素と反応させる工程。Si (SeR) 4 (R represents an alkyl group) b) A step of converting alkyl selenium silicate into a liquid containing RSeH and reacting it with hydrogen selenide.
Ｃ）重縮合反応を経て、ＲＳｅＨとセレン化水素を留去
しドライゲルとする工程。C) A process of distilling off RSeH and hydrogen selenide to form a dry gel through a polycondensation reaction.
ｄ）ドライゲルを熱処理することでＳ＋Ｓｅｚのカルコ
ゲナイドガラスとする工程。d) A step of heat-treating the dry gel to form S+Sez chalcogenide glass.
［実 施 例］
重版の四塩化ケイ素１モルを二硫化炭素溶液にし、 Ｃ
，Ｈ６５ｅＨ５モルを加えよく撹拌した。[Example] 1 mole of reprinted silicon tetrachloride is made into a carbon disulfide solution, and C
, H65eH5 mol were added and stirred well.
曳応終了後、過剰のＣ１ＨｓＳｅ＋−ｔと二硫化炭素を
留去し、エチルセレンシリケートとした。反応式は下式
である。After the reaction was completed, excess C1HsSe+-t and carbon disulfide were distilled off to obtain ethyl selenium silicate. The reaction formula is as shown below.
Ｓ ＩＣ９４＋４Ｃｉ Ｈａ ５ｅＨ−１Ｓ ｔ （
ＳｅＣｚ’）ｉｓ ） ４ ＋４Ｈｃｇ。S IC94+4Ci Ha 5eH-1S t (
SeCz') is ) 4 +4Hcg.
次に、得られたエチルセレンシリケートをＣｘ Ｈｓ
ＳｅＨの溶液にし、セレン化水素を通じた。よく攪拌し
反応させ、ゾルとした。Next, the obtained ethyl selenium silicate was converted into Cx Hs
A solution of SeH was made and hydrogen selenide was passed through. The mixture was stirred thoroughly and reacted to form a sol.
このゾルはすぐにゲル化し、室７品で、ドラフト・中に
置いておくとドライゲルが得られた。This sol quickly turned into a gel, and a dry gel was obtained when the sol was placed in a fume hood.
ドライゲルをＮ２雰囲気中で５００℃まで加熱すると余
分なセレン化水素ガスが抜け、最終的には５ｉＳｅｔの
カルコゲナイドガラスになった。When the dry gel was heated to 500° C. in a N2 atmosphere, excess hydrogen selenide gas was released, and finally 5iSet chalcogenide glass was obtained.
［発明の効果１
以上述べたように、本発明によれば、アルキルセレンシ
リケートとセレン化水素との反応によりゾルとし、ゲル
死後ドライゲルとし、熱処理によりセレン化シリコンと
することにより、以前では作製できなかったカルコゲナ
イドガラスをバルク状等の任意の形状に作製できるとい
う効果を有する。[Effect of the invention 1] As described above, according to the present invention, a sol is formed by the reaction between an alkyl selenium silicate and hydrogen selenide, a dry gel is formed after the gel dies, and silicon selenide is formed by heat treatment. This has the effect that chalcogenide glass, which was not available before, can be made into any shape such as a bulk shape.
このようにして得られたカルコゲナイドガラスは、赤外
線透過光ファイバーや、超低損失光ファイバー、半導体
素子等へ応用でき、太き（貢献することになるであろう
。The chalcogenide glass thus obtained can be applied to infrared transmitting optical fibers, ultra-low loss optical fibers, semiconductor devices, etc.
以上 出願人 セイコーエブツン株式会社that's all Applicant: Seiko Ebutsun Co., Ltd.
Claims (1)
製することを特徴とするカルコゲナイドガラスの製造方
法。 ａ）四塩化ケイ素とＲＳｅＨの反応により下式で示され
るアルキルセレンシリケートとする工程。 Ｓｉ（ＳｅＲ）＿４（ただし、Ｒはアルキル基を示す） ｂ）アルキルセレンシリケートをＲＳｅＨの溶液にしセ
レン化水素と反応させる工程。 ｃ）重縮合反応を経て、ＲＳｅＨとセレン化水素を留去
しドライゲルとする工程。 ｄ）ドライゲルを熱処理することでＳｉＳｅ＿２のカル
コゲナイドガラスとする工程。[Claims] A method for producing chalcogenide glass, characterized in that a selenide represented by SiSe_2 is produced in the following steps. a) A step of producing an alkyl selenium silicate represented by the following formula by reacting silicon tetrachloride with RSeH. Si(SeR)_4 (R represents an alkyl group) b) A step in which alkyl selenium silicate is made into a solution of RSeH and reacted with hydrogen selenide. c) A step of distilling off RSeH and hydrogen selenide to form a dry gel through a polycondensation reaction. d) A step of heat-treating the dry gel to form SiSe_2 chalcogenide glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23560488A JPH0283237A (en) | 1988-09-20 | 1988-09-20 | Production of chalcogenide glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23560488A JPH0283237A (en) | 1988-09-20 | 1988-09-20 | Production of chalcogenide glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0283237A true JPH0283237A (en) | 1990-03-23 |
Family
ID=16988469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23560488A Pending JPH0283237A (en) | 1988-09-20 | 1988-09-20 | Production of chalcogenide glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0283237A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034494C (en) * | 1992-07-11 | 1997-04-09 | 武汉工业大学 | Glass composition containing sulfure halide |
| EP1058340A4 (en) * | 1998-12-25 | 2005-03-16 | Matsushita Electric Ind Co Ltd | Antenna, radio device and radio repeater |
-
1988
- 1988-09-20 JP JP23560488A patent/JPH0283237A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034494C (en) * | 1992-07-11 | 1997-04-09 | 武汉工业大学 | Glass composition containing sulfure halide |
| EP1058340A4 (en) * | 1998-12-25 | 2005-03-16 | Matsushita Electric Ind Co Ltd | Antenna, radio device and radio repeater |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58147113A (en) | Doped oxidized film and method of producing doped semiconductor | |
| JPH0283237A (en) | Production of chalcogenide glass | |
| JPH07206451A (en) | Production of synthetic quartz glass | |
| JPH11302026A (en) | Heat resistant synthetic silica glass for intercepting impurity metal | |
| JPH0283235A (en) | Production of chalcogenide glass | |
| JPH0283236A (en) | Production of chalcogenide glass | |
| JPS6126522A (en) | Production of quartz glass | |
| JPH03295826A (en) | Manufacture of semiconductor fine particles-doped silica glass | |
| JPS63262844A (en) | Method of forming silicon dioxide glass film | |
| JPH0114177B2 (en) | ||
| JPH06191858A (en) | Formation of inorganic polymer | |
| JP3007922B2 (en) | Manufacturing method of ceramic fine pattern | |
| JP3555221B2 (en) | Method for producing fluorine-containing silicon oxide film | |
| JPS60235711A (en) | Formation of sio2 film | |
| JPS6065732A (en) | Production of quartz glass | |
| JPH01119526A (en) | Production of silica glass | |
| JPH0657611B2 (en) | Method for producing quartz glass thin film | |
| JPS61168542A (en) | Production of quartz glass | |
| JPH01313343A (en) | Method of reforming silicon oxide film | |
| JPS6126523A (en) | Production of quartz glass | |
| Van De Leest et al. | Iron-silicate glassy films by sol-gel conversion induced by rapid thermal processing | |
| JPH03183133A (en) | Method of improving oxide film for semiconductor device use | |
| JPS6482634A (en) | Manufacture of semiconductor device | |
| JP2006520735A (en) | High homogeneity silica glass produced by the sol-gel method | |
| JPH02221130A (en) | Semiconductor doped glass |