JPH0282494A - Thin film electroluminescent element - Google Patents
Thin film electroluminescent elementInfo
- Publication number
- JPH0282494A JPH0282494A JP63232650A JP23265088A JPH0282494A JP H0282494 A JPH0282494 A JP H0282494A JP 63232650 A JP63232650 A JP 63232650A JP 23265088 A JP23265088 A JP 23265088A JP H0282494 A JPH0282494 A JP H0282494A
- Authority
- JP
- Japan
- Prior art keywords
- luminous layer
- thin film
- iron group
- emitting layer
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000470 constituent Substances 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- -1 ZnS%ZnSe Chemical class 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910001428 transition metal ion Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野コ
本発明は薄膜エレクトロルミネッセントパネルデイスプ
レィ等に用いられる薄膜エレクトロルミネッセント素子
（以下、薄膜ＥＬ索子と略Ｊ己する）（こ関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film electroluminescent element (hereinafter abbreviated as a thin film EL element) used in a thin film electroluminescent panel display, etc. It is related to
［従来の技術］
従来から、薄膜ＥＬは、フラットパネルデイスプレィの
１つとして、盛んに研究されている。[Prior Art] Thin film EL has been actively researched as a type of flat panel display.
薄膜ＥＬ素子の発光層は、主にＩＩ−ＶＩ族化合物（例
えば、Ｚ ｎ Ｓ ％ Ｚ ｎ Ｓ ｅ 、Ｃａ Ｓ
、Ｓ ｒ Ｓ ％Ｓ ｒＳｅなど）を母体材料とし、発
光中心としてＣｅやＥｕ等のような種々の希土類イオン
や、ＭｎやＣｕ等に代表される遷移金属イオンなどを添
加したものが良く用いられている。これら発光層材料の
一部はＣＲＴ用螢光体祠料としても研究、実用化されて
いる。The light-emitting layer of a thin film EL device is mainly composed of II-VI group compounds (e.g., ZnS%ZnSe, CaS
, S r S % S rSe, etc.) as a host material, and various rare earth ions such as Ce and Eu, and transition metal ions such as Mn and Cu are added as luminescent centers. ing. Some of these light-emitting layer materials have been studied and put into practical use as phosphor abrasive materials for CRTs.
ＣＲＴ用螢光体材料については鉄族元素がキラー中心と
して働き、輝度を低下させることが知られており、薄膜
ＥＬにおいても類似の影響があるものと推定される。し
かし、ＣＲＴのカソードルミネッセンスとＥＬとは発光
、特に励起機（ｔが異なるので薄膜ＥＬ素子の発光層中
に含まれる鉄族元素が具体的にどういう作用をするのか
、更に、輝度低下に対する定量的な影響といった点がま
ったく明らかにされておらず、したがって、従来はその
考慮、対策がまったくなされていなかった。Regarding phosphor materials for CRTs, it is known that iron group elements act as killer centers and reduce brightness, and it is presumed that a similar effect will occur in thin film EL. However, CRT cathodoluminescence and EL differ in light emission, especially in the excitation mode (t). The impact of this phenomenon has not been clarified at all, and therefore no consideration or countermeasures have been taken in the past.
［発明が解決しようとする課題］
本発明は、発光輝度の高い薄膜ＥＬ索子を提供しようと
するものである。[Problems to be Solved by the Invention] The present invention aims to provide a thin film EL cord with high luminance.
［課題を解決するための手段］
上記課題を解決するための本発明の構成は、特許請求の
範囲に記載のとおりＩＩ−ＶＩ族元素の化合物を発光層
の母体材料とする薄膜ＥＬ素子において、発光層中の鉄
族元素含有量が１００ｐｐＩｎ以下である薄膜ＥＬ素子
である。[Means for Solving the Problems] The structure of the present invention for solving the above problems is as follows: This is a thin film EL device in which the iron group element content in the light emitting layer is 100 ppIn or less.
本発明は実施例の記載からも明らかなように、発光層中
の鉄族元素含有量が１１００ｐｐを越えると発光輝度の
低ドが大きくなり、実用性がなくなるという発見に基づ
くものである。As is clear from the description of the examples, the present invention is based on the discovery that when the iron group element content in the light emitting layer exceeds 1100 pp, the luminance decreases significantly and becomes impractical.
本発明の発光層の作製方法は、特に限定する必要はない
が、できるだけ鉄族元素が発光層作製時に、薄膜に取り
込まれない方法および装置を用いることが望ましい。し
かし、発光層以外のＥＬ素子の構成材料である透明電極
や絶縁層、背面電極、そして発光層母体材料に添加され
る発光中心等については、本発明の効果を得るために、
特に材料を限定する必要がない。そのため、透明電極に
は、Ｉ Ｔ Ｏ（Ｉｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ）
やＺｎＯ：Ａ１等を用いることができる。Although the method for producing the light-emitting layer of the present invention does not need to be particularly limited, it is desirable to use a method and apparatus in which iron group elements are not incorporated into the thin film as much as possible during the production of the light-emitting layer. However, in order to obtain the effects of the present invention, regarding the constituent materials of the EL element other than the light emitting layer, such as the transparent electrode, the insulating layer, the back electrode, and the luminescent center added to the light emitting layer base material,
There is no need to particularly limit the materials. Therefore, the transparent electrode is made of ITO (Indium Tin Oxide).
or ZnO:A1, etc. can be used.
絶縁層の材料としては、Ｙ２Ｏ３，ＳｉＯ２、Ｔａ２ｅ
ｓ等の酸化物、Ｓｉ３Ｎ４、ＢＮ。Materials for the insulating layer include Y2O3, SiO2, Ta2e.
Oxides such as s, Si3N4, BN.
ＡＩＮ等の窒化物及びそれらの複合膜などを用いること
ができ、また、ＰｂＴｉ０ｚ、５ｒＴｉ０３、ＢａＴｉ
Ｏ３等のペロブスカイト型やＢａＴａ２Ｏ６等のタング
ステンブロンズ型のような強誘電体材料を用いることが
できる。Nitride such as AIN and composite films thereof can be used, and PbTi0z, 5rTi03, BaTi
A ferroelectric material such as a perovskite type such as O3 or a tungsten bronze type such as BaTa2O6 can be used.
発光中心については、従来から用いられている希土類イ
オンや遷移金属イオンなどを用いることができる。As for the luminescent center, conventionally used rare earth ions, transition metal ions, and the like can be used.
［実施例コ 以下、実施例によって、本発明を具体的に説明する。[Example code] Hereinafter, the present invention will be specifically explained with reference to Examples.
実施例１
ここでは、第１図に示したようなＭＩＳ構造を有するＳ
ｒＳ：Ｃｅ薄膜ＥＬ素子を作製した。Example 1 Here, an S having an MIS structure as shown in FIG.
An rS:Ce thin film EL device was fabricated.
まず、ガラス基板１上にＺｎＯ： Ａ １透明電極層２
を形成し、次に発光層３であるＳｒＳ：Ｃｅ薄膜を電子
ビーム蒸着法を用いて、基板温度５００℃で形成した。First, a ZnO: A 1 transparent electrode layer 2 is formed on a glass substrate 1.
was formed, and then a SrS:Ce thin film, which is the light emitting layer 3, was formed using an electron beam evaporation method at a substrate temperature of 500°C.
この際、発光層中のＦｅの濃度がそれぞれ０．■、０，
０５、Ｏ，ＯＬ ０．００５％になるように蒸発源に
Ｆｅを添加した。なお、発光層中のＦｅａ度はＳＩＭＳ
（２次イオン質量分光）を用いて測定した。At this time, the concentration of Fe in the light emitting layer is 0. ■、0、
05, O, OL Fe was added to the evaporation source to make it 0.005%. In addition, the Fea degree in the light emitting layer is SIMS
(Secondary ion mass spectroscopy).
発光層３を形成後、絶縁層４どしてＹ２Ｏ３薄膜を電子
ビーム蒸着で形成し、最後に背面電極５として、Ａｌ″
４膜を形成した。After forming the light emitting layer 3, a Y2O3 thin film is formed as the insulating layer 4 by electron beam evaporation, and finally, as the back electrode 5, Al'' is formed.
Four films were formed.
このようにして得られた種々のＳ ｒＳ ： Ｃｅ薄膜
ＥＬ素子の発光輝度Ｌ６０とＦｅａ度との関係を第２図
に示す。素子の励起には、１ｋＨｚ。FIG. 2 shows the relationship between the luminance L60 and the Fea degree of various S rS :Ce thin film EL devices obtained in this way. 1kHz for excitation of the element.
１００μｓの両極性パルス波電圧を印加した。発光輝度
Ｌ６０は、ｌｅｄ／ｍ２を示す電圧にＢＯＶ印加した時
に得られた発光輝度とした。図からもわかるように、Ｆ
ｅ９度が０．０１％以上から、輝度の減少が起こる。A 100 μs bipolar pulse wave voltage was applied. The luminance L60 was the luminance obtained when BOV was applied to the voltage representing led/m2. As you can see from the figure, F
When the e9 degree is 0.01% or more, the brightness decreases.
一方、他の鉄族元素であるＮｉ、Ｃｏについても同様な
条件で素子を作製したが、いずれの場合もＦｅと同様に
、０．０１％以上から、輝度の減少がみられた。On the other hand, devices were fabricated using other iron group elements such as Ni and Co under similar conditions, but in both cases, a decrease in brightness was observed from 0.01% or more, similar to Fe.
実施例２
ここでは、第１図に示したようなＭＩＳ構造を有するＣ
ａＳ ： Ｅｕ薄膜ＥＬ素子を実施例１と同様な方法・
手順で作製した。発光層中のＦｅ９度ついても実施例１
と同様な方法で、それぞれ０．１．０．０５．０．０１
．０．００５％となるように作製し、ＳＩＭＳ（２次イ
オン質量分光）を用いてＦｅ濃度を測定した。Example 2 Here, a C
aS: Eu thin film EL device was manufactured using the same method as in Example 1.
It was made according to the procedure. Example 1 with 9 degrees of Fe in the light emitting layer
0.1.0.05.0.01 respectively
．． The Fe concentration was prepared to be 0.005%, and the Fe concentration was measured using SIMS (secondary ion mass spectroscopy).
このようにして得られたＣａＳ ： Ｅｕ薄膜ＥＬ素子
の発光輝度Ｌ６０とＦｅ濃度との関係を第３図に示す。FIG. 3 shows the relationship between the luminance L60 of the CaS:Eu thin film EL device thus obtained and the Fe concentration.
素子の駆動およびＬ６ｏの定義については実施例１と同
様である。図からもわかるように、Ｆｅ濃度が０．０１
％以上から、輝度の減少が起こる。The driving of the element and the definition of L6o are the same as in the first embodiment. As can be seen from the figure, the Fe concentration is 0.01
% or more, a decrease in brightness occurs.
一方、他の鉄族元素であるＮｉ５Ｃｏについても同様な
条件で素子を作製したが、いずれの場合もＦｅと同様に
、０．０１％以上から、輝度の減少がみられた。On the other hand, devices were fabricated using Ni5Co, another iron group element, under similar conditions, but in both cases, a decrease in brightness was observed from 0.01% or more, similar to Fe.
実施例３
ここでは、第１図に示したようなＭＩＳ構造を有するＺ
ｎＳ：Ｍｎ薄膜ＥＬ索子を作製した。Example 3 Here, Z having the MIS structure as shown in FIG.
An nS:Mn thin film EL cord was fabricated.
ガラス基板上にＺｎＯ： Ａ Ｉを形成し、次に発光層
であるＺ ｎ Ｓ ： Ｍ ｎ薄膜を電子ビーム蒸告法
を用いて、基板温度２００℃で形成し、その後、基板温
度５００℃で熱処理を行った。発光層ＩＪのＦｅの濃度
についてはそれぞれ０．１．０．０５．０、旧、０．０
０５％になるように蒸発源にＦｅを添加した。なお、発
光層中のＦｅｌＱ度はＳＩＭＳ（２次イオン質量分光）
を用いて測定した。ZnO:AI was formed on a glass substrate, and then a ZnS:Mn thin film as a light emitting layer was formed using an electron beam evaporation method at a substrate temperature of 200°C, and then at a substrate temperature of 500°C. Heat treatment was performed. The concentration of Fe in the light-emitting layer IJ is 0.1, 0.05.0, old, and 0.0, respectively.
Fe was added to the evaporation source to give a concentration of 0.05%. In addition, the FelQ degree in the light emitting layer is determined by SIMS (secondary ion mass spectroscopy).
Measured using
発光層形成後、絶縁層としてＹ２Ｏ３薄膜を電子ビーム
蒸着で形成し、最後に背面電極として、ＡＩ薄膜を形成
した。After forming the light emitting layer, a Y2O3 thin film was formed as an insulating layer by electron beam evaporation, and finally an AI thin film was formed as a back electrode.
このようにして得られたＺ ｎ Ｓ ： Ｍ ｎ薄膜Ｅ
Ｌ索子の発光輝度Ｌ６０とＦｅａ度との関係を第４図に
示す。素子の駆動およびＬ６０の定義については実施例
１と同様である。第４図からもわかるように、Ｆｅ濃度
が０．０１％以上から、輝度の減少が起こる。The thus obtained ZnS:Mn thin film E
FIG. 4 shows the relationship between the light emission brightness L60 of the L cord and the Fea degree. The driving of the element and the definition of L60 are the same as in the first embodiment. As can be seen from FIG. 4, the brightness decreases when the Fe concentration exceeds 0.01%.
一方、他の鉄族元素であるＮｉ５Ｃｏについても同様な
条件で素子を作製したが、いずれの場合もＦｅと同様に
、０．０１％以上から、輝度の減少がみられた。On the other hand, devices were fabricated using Ni5Co, another iron group element, under similar conditions, but in both cases, a decrease in brightness was observed from 0.01% or more, similar to Fe.
［発明の効果］
以上説明したように、本発明により発光輝度が大で実用
性のあるＥＬ索子を得ることができる。[Effects of the Invention] As explained above, according to the present invention, it is possible to obtain a practical EL cord with high luminance.
第１図は、本発明のＥＬ索子の構造の一例を示す断面の
模式図、
第２〜４図は本発明のＥＬ素子の発光層中の鉄の濃度と
発光層の発光輝度との関係を示すグラフである。FIG. 1 is a schematic cross-sectional view showing an example of the structure of the EL element of the present invention, and FIGS. 2 to 4 show the relationship between the iron concentration in the light-emitting layer and the luminance of the light-emitting layer of the EL element of the present invention. This is a graph showing.
Claims (1)
レクトロルミネッセント素子において、発光層中の鉄族
元素含有量が１００ｐｐｍ以下であることを特徴とする
薄膜エレクトロルミネッセント素子。1. A thin film electroluminescent device using a compound of group II-VI elements as a base material of a light emitting layer, characterized in that the content of iron group elements in the light emitting layer is 100 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63232650A JPH0282494A (en) | 1988-09-19 | 1988-09-19 | Thin film electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63232650A JPH0282494A (en) | 1988-09-19 | 1988-09-19 | Thin film electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0282494A true JPH0282494A (en) | 1990-03-23 |
Family
ID=16942621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63232650A Pending JPH0282494A (en) | 1988-09-19 | 1988-09-19 | Thin film electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0282494A (en) |
-
1988
- 1988-09-19 JP JP63232650A patent/JPH0282494A/en active Pending
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