JPS6346117B2 - - Google Patents
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- Publication number
- JPS6346117B2 JPS6346117B2 JP55180694A JP18069480A JPS6346117B2 JP S6346117 B2 JPS6346117 B2 JP S6346117B2 JP 55180694 A JP55180694 A JP 55180694A JP 18069480 A JP18069480 A JP 18069480A JP S6346117 B2 JPS6346117 B2 JP S6346117B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light
- cas
- srs
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000010409 thin film Substances 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 239000010408 film Substances 0.000 description 14
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 10
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052693 Europium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052925 anhydrite Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 208000003464 asthenopia Diseases 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052923 celestite Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- GAGGCOKRLXYWIV-UHFFFAOYSA-N europium(3+);trinitrate Chemical compound [Eu+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GAGGCOKRLXYWIV-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Description
【発明の詳細な説明】
エレクトロルミネツセンス発光素子（以下EL
発光素子と称す）においては、最近、絶縁薄膜、
螢光薄膜、絶縁薄膜の順に積層した三層構造交流
EL発光素子が高い輝度と良好な寿命特性をもつ
ているため、フラツトパネルデイスプレイとして
最も実用化の可能性が高いものとして注目されて
いる。このEL発光素子においては、黄色発光を
するZnS：Mn螢光膜がもつぱら用いられている。
実用的見地からは、黄色発光はデイスプレイの見
やすさや観察者の眼の疲労などを考えた場合好ま
しくなく、もちろん平板状のテレビジヨン受像機
を実現するためには他に青、緑および赤の発光色
が必要である。したがつて、現時点では、黄色発
光以外の螢光体が強く望まれており、一般に、
ZnSにTbF3，PrF3，DyF3などをドープして緑色
や白色で発光させることが試みられている。しか
し、最高到達輝度は緑色で約300フツトランバー
ト、白色で約50フツトランバートでいまだ不足で
ある。[Detailed description of the invention] Electroluminescence light emitting device (hereinafter referred to as EL)
Recently, insulating thin films,
Three-layer AC structure with fluorescent thin film and insulating thin film laminated in that order
Because EL light-emitting elements have high brightness and good lifetime characteristics, they are attracting attention as having the highest potential for practical use as flat panel displays. In this EL light-emitting device, a ZnS:Mn fluorescent film that emits yellow light is mainly used.
From a practical standpoint, yellow luminescence is undesirable in terms of ease of viewing the display and eye strain on the viewer, and of course, in order to realize a flat television receiver, it is necessary to use blue, green, and red luminescence. Color is needed. Therefore, at present, phosphors other than those that emit yellow light are strongly desired, and generally,
Attempts have been made to dope ZnS with TbF 3 , PrF 3 , DyF 3 , etc. to make it emit green or white light. However, the maximum brightness achieved is approximately 300 foot lamberts for green and approximately 50 foot lamberts for white, which is still insufficient.
本発明はZnS以外の螢光体薄膜を検討した結
果、硫化カルシウム（CaS）または硫化ストロン
チウム（SrS）にセリウム（Ce）またはユーロピ
ウム（Eu）を付活した薄膜で効果的に青、緑、
赤のEL発光を得たものである。 As a result of studying phosphor thin films other than ZnS, the present invention found that a thin film made of calcium sulfide (CaS) or strontium sulfide (SrS) activated with cerium (Ce) or europium (Eu) can effectively produce blue, green, and
Red EL emission was obtained.
CaSおよびSrSにCeやEuを付活した螢光体は粉
末状螢光体として分散型の直流EL発光として検
討されたことがあるが、たとえZnS螢光体であつ
ても上記型式のEL発光特有のフオーミング現象
から来る劣化のため、十分な効果を得ることがで
きなかつた。本発明においては電子ビーム蒸着法
および後処理法を工夫し、優れた螢光薄膜を形成
し、それを三層薄膜型交流EL発光素子の螢光膜
として応用した結果、上記分散型の直流EL発光
と異なり、安定な三原色の発光を得たものであ
る。 Phosphors made of CaS and SrS activated with Ce or Eu have been studied as powdered phosphors for dispersion type DC EL emission, but even if ZnS phosphors are used, they cannot produce EL emission of the above type. Due to deterioration caused by the unique forming phenomenon, sufficient effects could not be obtained. In the present invention, we devised an electron beam evaporation method and a post-processing method to form an excellent fluorescent thin film, and applied it as a fluorescent film for a three-layer thin film type AC EL light emitting device. Unlike luminescence, it emits stable three primary colors.
以下、本発明の実施例について具体的に述べ
る。 Examples of the present invention will be specifically described below.
はじめに電子ビーム蒸発源としてのCaSまたは
SrSの螢光体（ペレツト状）を作製した。市販の
硝酸カリウムまたは硝酸ストロンチウムの水溶液
にマグネシウム金属フレークを入れ、90℃に加熱
して24時間放置し、イオン置換による鉄族遷移元
素の除去を行なつた。過した後、液に高純度
硫酸を添加し、硫酸カルシウムまたは硫酸ストロ
ンチウム沈澱物を形成し、沈澱物を別して洗浄
し、250℃で乾燥して無水のCaSO4またはSrSO4
を作製した。さらに上記硫酸塩を水素雰囲気中に
おいて1000℃で５時間熱処理し、CaSまたはSrS
に変換した。これら粉末に、CeまたはEuをエチ
ルアルコールに溶解した硝酸セリウムまたは硝酸
ユーロピウムを用いて通常ドープされる量である
0.08原子％添加し、適度のアルコールによる湿り
気を持つ状態で金型を用いてペレツト状に成形し
た。アルコール分を蒸発除去した後、硫化水素と
窒素の混合ガス雰囲気中で1100℃、２時間の条件
で熱処理を行い、軽く焼結して螢光体ペレツトと
した。このペレツトを電子ビーム蒸着法で螢光薄
膜を作る蒸発源とした。 IntroductionCaS or as an electron beam evaporation source
A SrS phosphor (pellet-shaped) was fabricated. Magnesium metal flakes were added to a commercially available aqueous solution of potassium nitrate or strontium nitrate, heated to 90°C and left for 24 hours to remove iron group transition elements by ion replacement. After filtration, high purity sulfuric acid is added to the liquid to form calcium sulfate or strontium sulfate precipitate, the precipitate is washed separately and dried at 250℃ to form anhydrous CaSO4 or SrSO4.
was created. Furthermore, the above sulfate was heat-treated at 1000℃ in a hydrogen atmosphere for 5 hours to form CaS or SrS.
Converted to . These powders are usually doped with cerium nitrate or europium nitrate in which Ce or Eu is dissolved in ethyl alcohol.
0.08 atomic % was added and molded into pellets using a mold in a state of moderate humidity due to alcohol. After the alcohol content was removed by evaporation, heat treatment was performed at 1100° C. for 2 hours in a mixed gas atmosphere of hydrogen sulfide and nitrogen, and light sintering was performed to form phosphor pellets. This pellet was used as an evaporation source for forming a fluorescent thin film using electron beam evaporation.
次にEL発光素子の作製法について述べる。 Next, we will discuss the manufacturing method of the EL light emitting device.
インジウム−錫酸化物（以下ITOと称す）透明
電極をコートしたガラス基板上に、はじめ電子ビ
ーム蒸着法でY2O3を200nmの厚みに蒸着した。
基板温度は250℃に保持した。Y2O3は絶縁膜の働
きをし、三層薄膜交流ELに通常よく用いられる。
他にSi3N4やBaTiO3が用いられるが原理的には
同じでほとんど差はない。つぎに前に述べた方法
で作製した。CaSまたはSrS螢光体を基板温度を
そのままにして500nmの厚みに同じ電子ビーム蒸
着法でY2O3膜の上に形成した。基板を取り出し
て調べた結果そのままの状態では波長245nmの紫
外線を照射してもなんら発光しない。しかし、
H2Sを含む不活性ガス、たとえばH2S−N2混合
ガス中において400℃〜1000℃の範囲内の温度で
アニールすることにより、螢光体膜が発光するよ
うになる。すなわちCaS：Ceは緑色、CaS；Eu
は赤色、SrS：Ceは青色、SrS：Euは橙色の発光
を示す。 Y 2 O 3 was first deposited to a thickness of 200 nm by electron beam evaporation on a glass substrate coated with an indium-tin oxide (hereinafter referred to as ITO) transparent electrode.
The substrate temperature was maintained at 250°C. Y 2 O 3 acts as an insulating film and is commonly used in three-layer thin film AC EL.
Si 3 N 4 and BaTiO 3 are also used, but the principle is the same and there is almost no difference. Next, it was fabricated using the method described above. A CaS or SrS phosphor was formed on the Y 2 O 3 film to a thickness of 500 nm using the same electron beam evaporation method while keeping the substrate temperature unchanged. After taking out the board and examining it, we found that in its original state, it did not emit any light even when irradiated with ultraviolet light with a wavelength of 245 nm. but,
The phosphor film becomes luminescent by annealing in an inert gas containing H 2 S, such as a H 2 S-N 2 mixed gas, at a temperature within the range of 400° C. to 1000° C. That is, CaS:Ce is green, CaS;Eu
emits red light, SrS:Ce emits blue light, and SrS:Eu emits orange light.
CaSやSrSの螢光膜にのみ着目し、基板として
耐熱性のあるもの、たとえばサフアイヤ基板を用
いた場合、前記条件で1000℃で加熱しても透明な
螢光薄膜の特性を持つ。しかし、1000℃より高い
温度では薄膜内で粒子成長が起り、不透明な不均
一厚みの膜になつてしまう。400℃よりも低い温
度では螢光を発生させることができない。本発明
においては、ガラス基板を用いているので耐熱性
上600℃で30分間、H2Sを５％含むN2ガス中でア
ニールした。H2Sはその濃度が0.1％でも100％で
も同様な効果を示し、アニール雰囲気としては
H2Sを含むものであればよい。アニールした後、
再び電子ビーム蒸着法でY2O3を前記螢光膜の上
に200nmの厚みで蒸着した。このとき基板温度は
前述と同じく250℃とした。最後にアルミニウム
金属を蒸着して電極とし、EL発光素子とした。
得られたEL発光素子の両電極間に2.5kHzの周波
数を持つ交流パルス（パルス巾200マイクロ秒）
電圧を印加した。低電圧側から徐々に電圧を上げ
て行き、発光し、かつ発光が飽和する電圧で電圧
−輝度特性が安定化するまでエージングした。エ
ージングが終つてからEL発光特性（電圧−輝度
特性）をエージング時と同じ励起条件で測定し
た。 Focusing only on CaS or SrS fluorescent films, if a heat-resistant substrate such as a sapphire substrate is used, the fluorescent thin film remains transparent even when heated at 1000°C under the above conditions. However, at temperatures higher than 1000°C, particle growth occurs within the thin film, resulting in an opaque film with non-uniform thickness. Fluorescence cannot be generated at temperatures lower than 400°C. In the present invention, since a glass substrate is used, annealing was performed at 600° C. for 30 minutes in N 2 gas containing 5% H 2 S for heat resistance. H2S shows similar effects whether its concentration is 0.1% or 100%, and as an annealing atmosphere,
Any material containing H 2 S may be used. After annealing,
Y 2 O 3 was again deposited on the fluorescent film to a thickness of 200 nm using the electron beam evaporation method. At this time, the substrate temperature was set to 250°C, the same as above. Finally, aluminum metal was vapor-deposited to form an electrode and an EL light emitting element was created.
An AC pulse with a frequency of 2.5kHz (pulse width 200 microseconds) is applied between both electrodes of the obtained EL light emitting device.
A voltage was applied. The voltage was gradually increased from the low voltage side, and aging was performed until the voltage-luminance characteristics were stabilized at a voltage at which light emission was saturated. After aging, EL emission characteristics (voltage-luminance characteristics) were measured under the same excitation conditions as during aging.
測定結果を図に示した。図において、曲線１は
CaS：Ce螢光膜、同２はSrS：Ce螢光膜、同３は
CaS：Eu螢光膜、同４はSrS：Eu螢光膜をそれ
ぞれ用いた場合のEL発光の電圧−輝度特性であ
る。それぞれほぼ160〜170Vに励起電圧を有し、
そこから急激に輝度が上昇し、220V付近から飽
和し始める。従来では、緑色発光のZnS：TbF3
螢光膜を用いた場合240Vで300フツトランバート
程度であつたが、曲線１からわかるように約400
フツトランバートの明るさがCaS：Ce螢光膜に
よつて得られる。また、青色や赤色および橙色に
ついても、従来品に比べて本発明による螢光体は
より明るく発光する。発光スペクトルはそれぞれ
の螢光体を陰極線発光させたときとほとんど同じ
であり、三原色に相当する青、緑、赤のEL発光
が得られる。 The measurement results are shown in the figure. In the figure, curve 1 is
CaS:Ce fluorescent film, 2 is SrS:Ce fluorescent film, 3 is
4 shows the voltage-brightness characteristics of EL light emission when using a CaS:Eu fluorescent film and a SrS:Eu fluorescent film, respectively. Each has an excitation voltage of approximately 160-170V,
From there, the brightness increases rapidly and begins to saturate around 220V. Conventionally, green-emitting ZnS: TbF 3
When a fluorescent film was used, the voltage was about 300 foot lambert at 240V, but as you can see from curve 1, it was about 400 foot lambert.
Hutslambert's brightness is obtained by the CaS:Ce fluorescent film. Furthermore, the phosphor of the present invention emits more brightly in blue, red, and orange colors than conventional products. The emission spectrum is almost the same as when each phosphor emits cathode rays, and EL emission of blue, green, and red corresponding to the three primary colors is obtained.
以上説明したように、本発明のエレクトロルミ
ネツセンス素子は、Ca，Srの硫化物にCe，Euを
ドープした螢光体薄膜を用いて構成されているも
のであり、従来のエレクトロルミネツセンス素子
に比べて発光特性に優れているものである。 As explained above, the electroluminescent device of the present invention is constructed using a phosphor thin film in which sulfides of Ca and Sr are doped with Ce and Eu, and is different from the conventional electroluminescent device. It has superior light emitting characteristics compared to other devices.
図は本発明にかかるエレクトロルミネツセンス
発光素子の実施例の印加電圧と輝度との関係を示
す。
The figure shows the relationship between applied voltage and brightness in an example of an electroluminescent light emitting device according to the present invention.
Claims (1)
縁薄膜、CeもしくはEuを付活したCaSもしくは
SrSの螢光体薄膜および絶縁薄膜の順に積層して
なることを特徴とするエレクトロルミネツセンス
発光素子。1 Between the electrodes, at least one of which is transparent, an insulating thin film, CaS or
An electroluminescent light-emitting device characterized by comprising a SrS phosphor thin film and an insulating thin film laminated in this order.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55180694A JPS57102983A (en) | 1980-12-19 | 1980-12-19 | Electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55180694A JPS57102983A (en) | 1980-12-19 | 1980-12-19 | Electroluminescent element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57102983A JPS57102983A (en) | 1982-06-26 |
| JPS6346117B2 true JPS6346117B2 (en) | 1988-09-13 |
Family
ID=16087665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55180694A Granted JPS57102983A (en) | 1980-12-19 | 1980-12-19 | Electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57102983A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990010045A1 (en) * | 1989-02-28 | 1990-09-07 | Kabushiki Kaisha Komatsu Seisakusho | Red electroluminescent element |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4751427A (en) * | 1984-03-12 | 1988-06-14 | Planar Systems, Inc. | Thin-film electroluminescent device |
| JPS60202684A (en) * | 1984-03-28 | 1985-10-14 | 沖電気工業株式会社 | Method of forming light emitting film of thin film el display panel |
| JPS60216498A (en) * | 1984-04-11 | 1985-10-29 | 松下電器産業株式会社 | Dispersive el panel |
| JPS61168896A (en) * | 1985-01-22 | 1986-07-30 | シャープ株式会社 | Thin film luminescence element |
| JPS6212093A (en) * | 1985-07-09 | 1987-01-21 | シャープ株式会社 | Thin film light emitting element |
| JPS625596A (en) * | 1985-06-28 | 1987-01-12 | シャープ株式会社 | Thin film luminescence element |
| JPH086086B2 (en) * | 1985-09-30 | 1996-01-24 | 株式会社リコー | White electroluminescent device |
| JPS62225583A (en) * | 1986-03-27 | 1987-10-03 | Sharp Corp | Thin-film light emitting element |
| JPS62122096A (en) * | 1985-11-21 | 1987-06-03 | シャープ株式会社 | Thin film light emitting device |
| JPS6332894A (en) * | 1986-07-24 | 1988-02-12 | シャープ株式会社 | Manufacture of thin film el device |
| JPH01217885A (en) * | 1988-02-25 | 1989-08-31 | Komatsu Ltd | Thin film element |
| GB9004480D0 (en) * | 1989-03-15 | 1990-04-25 | Asahi Chemical Ind | High luminance thin-fim electroluminescent device |
| JPH0845666A (en) * | 1995-08-11 | 1996-02-16 | Komatsu Ltd | Thin film el element |
| JP4996658B2 (en) * | 2009-10-07 | 2012-08-08 | 津波 修 | Mousetrap |
-
1980
- 1980-12-19 JP JP55180694A patent/JPS57102983A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990010045A1 (en) * | 1989-02-28 | 1990-09-07 | Kabushiki Kaisha Komatsu Seisakusho | Red electroluminescent element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57102983A (en) | 1982-06-26 |
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