JPH0282128U - - Google Patents
Info
- Publication number
- JPH0282128U JPH0282128U JP16012988U JP16012988U JPH0282128U JP H0282128 U JPH0282128 U JP H0282128U JP 16012988 U JP16012988 U JP 16012988U JP 16012988 U JP16012988 U JP 16012988U JP H0282128 U JPH0282128 U JP H0282128U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- input
- output transducer
- yig thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
第１図は本考案に係る静磁波遅延素子の一実施
例を示す斜視図、第２図は他の実施例を示す斜視
図、第３図は従来の静磁波遅延素子を示す斜視図
、第４図、第５図は入力パワーと出力パワーの関
係を示す図、第６図、第７図は周波数と群遅延の
関係を示す図である。
１……第１の基板、２……ＹＩＧ薄膜、３……
第２の基板、４ａ……入力トランスジユーサ、４
ｂ……出力トランスジユーサ、５……接地膜。
FIG. 1 is a perspective view showing one embodiment of a magnetostatic wave delay element according to the present invention, FIG. 2 is a perspective view showing another embodiment, and FIG. 3 is a perspective view showing a conventional magnetostatic wave delay element. 4 and 5 are diagrams showing the relationship between input power and output power, and FIGS. 6 and 7 are diagrams showing the relationship between frequency and group delay. 1... First substrate, 2... YIG thin film, 3...
Second board, 4a...Input transducer, 4
b...Output transducer, 5...Grounding membrane.
Claims (1)
と、一方の面に入出力トランスジユーサが形成さ
れた第２の基板からなり、前記入出力トランスジ
ユーサと前記ＹＩＧ薄膜を接して前記第１、第２
の基板が固定された静磁波遅延素子において、前
記第１の基板に形成されたＹＩＧ薄膜の膜厚を入
力トランスジユーサ側から出力するトランスジユ
ーサ側に向かうに従つて薄く形成したことを特徴
とする静磁波遅延素子。 It consists of a first substrate on which a YIG thin film is formed on one surface, and a second substrate on which an input/output transducer is formed on one surface, and the input/output transducer and the YIG thin film are in contact with each other. 1st, 2nd
A magnetostatic wave delay element having a fixed substrate, characterized in that the thickness of the YIG thin film formed on the first substrate becomes thinner from the input transducer side toward the output transducer side. A magnetostatic wave delay element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16012988U JPH075687Y2 (en) | 1988-12-09 | 1988-12-09 | Magnetostatic wave delay element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16012988U JPH075687Y2 (en) | 1988-12-09 | 1988-12-09 | Magnetostatic wave delay element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0282128U true JPH0282128U (en) | 1990-06-25 |
| JPH075687Y2 JPH075687Y2 (en) | 1995-02-08 |
Family
ID=31441926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16012988U Expired - Lifetime JPH075687Y2 (en) | 1988-12-09 | 1988-12-09 | Magnetostatic wave delay element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH075687Y2 (en) |
-
1988
- 1988-12-09 JP JP16012988U patent/JPH075687Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH075687Y2 (en) | 1995-02-08 |
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