JPH0272692A - Wiring board and forming method thereof - Google Patents

Abstract

PURPOSE:To form a wiring pattern characterized by a high aspect ratio, a thick wiring layer and a high density with excellent productivity by forming an insulating film with a polyimide resin whose main component is the repeating unit of a specified chemical formula. CONSTITUTION:The pattern of a photoresist film 4 is transferred to a polyimide film 3, and a machining groove 5 is formed. A plate growing pattern for a copper thin film 2 is exposed, and a copper plated layer 6 is formed and filled. A thick copper wiring layer is formed. At this time, the insulating film 3 is formed with a polyimide resin whose main component is the repeating unit of a Formula I, where R represents the organic group of a bivalent aromatic group. Since the insulating film 3 is formed with the polyimide resin in this way, high resistance against alkali plating liquid is shown when electroless copper plating is performed, and the insulating material is not dissolved. In this constitution, the polyimide insulating film is thick, pattern droop does not occur and the electroless plating advances. Therefore, the wiring layer characterized by a high aspect ratio and the thick film can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wiring board suitable for mounting highly integrated LSIs and a method for forming the same.

[Conventional technology]

Printed keyboards used in large-scale computers are becoming more sophisticated, that is, multi-layered, in order to achieve higher functionality, smaller size, smaller size, and lower cost.

In addition, the conductor layer and the insulating layer sandwiched between the conductor layers are made of polyimide resin, which has a high glass transition point, excellent heat resistance, and a small coefficient of thermal expansion. It is preferably used.Furthermore, this polyimide m
B″fi can also impart photosensitivity if necessary.

On the other hand, Jumei is known for its multi-layered design! As a method for manufacturing the structure, there is a technique described in Japanese Patent Application Laid-Open No. 62-222696. This method involves forming a base metal H4 layer on a substrate, patterning it into a ferrule pattern shape by dry etching, etc., and then forming a polyimide-based refractory layer with grooves so as to protrude from the surface of the base layer. is formed, and using this insulating layer as a plating resist, conductor wiring is selectively formed on the base metal layer inside the processed groove by electroless plating.

[Problems to be Solved by the Invention] The above technique did not take into account the resistance of the polyimide yarn @Yongbo w family, which serves as the plating resist, to electroless plating.

In other words, the electroless plating solution is alkali with a pH of 10 to 13, whereas ordinary polyimide resin has low alkali resistance. It is commonly understood that plating is removed from the surface layer.

As a result, the composition of the plating solution changes, the growth rate of the plating metal layer becomes slow, productivity decreases, and the pattern becomes misaligned, making it impossible to form wiring with a high aspect ratio. There was a problem that the insulating layer became thinner and thick wiring layers could not be formed.

The purpose of the present invention is to solve the problems of the prior art described above,
The object of the present invention is to provide a wiring board and a method for forming the same, which can form a wiring pattern with a high aspect ratio, a thick wiring layer (i1!l), and a high density.

[Means to solve the problem]

The above object is to provide a conductor pattern for plating growth on a substrate, provide an insulator #M having a groove opening on the pattern, and provide a wiring pattern in which a conductor wiring is provided in the groove. According to Shigeki, by a wiring board characterized in that the above-mentioned insulating group is formed of a polyimide d whose main component is a repeating unit of the general formula [I]:! E is done.

However, in formula (1), R represents an aromatic organic group.

The wiring board of the present invention may be made into a multi-wire board by forming a plurality of core layers of patterned layers each consisting of a conductor wiring and an insulated wire. It's okay.

On the other hand, the present invention provides a method for forming the above-mentioned distribution board.
A conductive pattern for plating growth is formed on the substrate, and an insulating layer including the conductive pattern is formed on the substrate, and a groove that opens on the upper interlayer pattern is formed in the insulating layer. Then, in a method for forming a wiring board in which a conductor is formed and filled in the groove by electroless plating to form a conductor wiring, the above-mentioned A method for forming a wiring board is provided, which is characterized by forming a locus gland.

In the method for forming a wiring board of the present invention, a photosensitive polyimide resin which is converted into a polyimide tree B* whose main component is a repeating unit of the general formula [■°] by heat curing may be used for the barrier film.

Further, in the method for forming a wiring board, a plurality of distribution pattern layers including a conductive wiring layer and an insulating film may be layered.

The polyimide resin used in the present invention is a polymer whose main component is a repeating unit of -[I], and has electroless plating solution resistance, heat resistance, and loquatability.

Specific examples of R in general formula [I] are: And so on.

The polyimide resin used in the present invention is formed as an isolation film on a substrate by the following method. That is, polyamide relatives (
Apply varnish (polyimide precursor) on the substrate,
The polyimide wAVi layer is heated and cured at a temperature of 500° C. or higher and 500° C. or lower. Application to A& can be appropriately selected from methods such as spin coating, dipping, spraying, and printing.

Examples of methods for reprocessing polyimide resin include the well-known wet etching method and dry etching method. In the wet etching method, a photoresist is coated on a polyimide resin layer, dried, and then treated with light using a predetermined photomask to create an image and then dried to obtain a predetermined pattern. Thereafter, a predetermined portion of the polyimide 1 tumor is selectively removed by etching, and the unnecessary photoresist is removed to form a processed image on the polyimide dome.

In addition, as the dry etching method, since the object to be reprocessed is an organic layer, the dry etching method using oxygen plasma or 11! Reactive ion etching using industrial plasma is a preferred method, but is not limited thereto. Oxygen plasma resistant glands are desirable as dry etching resistant materials used in dry etching. Suitable examples include organosilicon photoresists, metals,
Examples include, but are not limited to, silicon oxide, silicon nitride, and spin-on glass.

In the case of an organosilicon photoresist, the method for forming an oxygen plasma resistant pattern is as follows:
There is a method in which a film is formed using a spin code coating method and then a pattern is formed using normal photophosphorography. In addition, in the case of metals, 1G silicon, and silicon nitride, distillation,
A molten layer is formed on a heat-resistant organic material that is easy to bathe using a sputtering method or, in the case of spin-on glass, a spin cord coating method. By forming a pattern on these structures by photolithography and performing dry etching or wet etching using the pattern as a mask, a pattern of W=plasma resistant gland can be obtained.

Examples of the photosensitive polyimide used in the present invention include JP-A-57-168942 and JP-A-57-170929.
Examples include materials shown in Japanese Patent Application Laid-Open No. 54-145794. However, the materials used in the present invention are
It is heat-cured and ultimately converted into a polyimide resin whose main component is the repeating unit of the general formula [I], and it has acid-free plating solution resistance, heat resistance, insulating group properties, and resist properties. Any material may be used, and the material is not limited to the materials shown in the above-mentioned publications.

The engraving of the photosensitive polyimide side fat used in the present invention is carried out by the following method. That is, first, a photosensitive polyamic acid C (element-sensitive polyimide precursor) varnish is applied onto a substrate and dried to form a precursor resin layer. Next, the precursor resin layer is exposed using a predetermined photomask and developed.
By selectively removing parts of the legs, a processed monument is formed on the precursor resin layer.

In this case, it is heated and cured and converted into a polyimide layer, thereby forming a processed layer on the photosensitive polyimide resin insulating film.

The photosensitive polyimide resin precursor used in the present invention can be patterned by ordinary photolithography technique. Application to the substrate can be appropriately selected from among + steps such as machining, spin coating, stirring, spraying, and printing.

Dry 5N is carried out at a temperature ranging from room temperature to 120°C. If the temperature is lower than room temperature, it will take a long time to evaporate the bath medium, making it impractical. If the temperature is higher than 120°C, thermal decomposition of the photocrosslinking agent and sensitizing agent will occur, and they will not contribute to the photoreaction.
Vacuum drying often yields good results.

The path light is usually an ultraviolet beam, but it may also be a beam beam, an electric beam, an X-ray beam, or an ion beam.

As a developer, N-methyl-2-pyrrolidone, N,N
- Dimethylformamide, lV, IV-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphoric triamide, lV-acetyl-epsilon-caprolactam, 1,3-dimethyl-2-imidazolidinone, etc. alone. Or non-containing amino acids such as methanol, ethanol, isopropyl alcohol, benzene, toluene, xylene, and methylcellosolve.
It can also be used as a mixture with a medium.

The pattern formed by development is washed with a rinse solution to remove the developing bath medium. For the rinsing liquid, a non-bath medium of polyamic acid with good developer and developer properties is used, but methanol, ethanol, isobuvinyl alcohol, benzene,
Suitable examples include toluene, xylene, and methyl semivine.

The polyamide composition improved by the above iC treatment is
By heat treatment, it becomes a heat-resistant polymer pattern with filler groups of Imido-ken JP ground.

The heating temperature ranges from 1141 to 120°C or higher and 5°C or lower. If it is lower than 120℃, closed field reactions may not occur.
Or it becomes extremely slow and impractical.

If the temperature exceeds 500°C, thermal decomposition of the polymer may occur, which is not preferable.

It is preferable that the heat treatment of polyimide and photosensitive polyimide be carried out under an atmosphere surrounded by an inviscid gas such as a room cable or under the entire atmosphere. In addition, under an inert gas atmosphere, it is preferable to mix a small amount of reducing gas such as hydrogen.

Various electroless plating solutions can be used as the electroless plating solution used in the present invention.
A chemical steel plating solution shown in Publication No. 66 is used. However, any electroless plating solution may be used, and the present invention is not limited to this.

The six plating substances listed in the above publication include steel (II) ions, steel (n) ion oxidizing agents, copper (II) ion reducing agents, alkali metal hydroxides, and ethoxy-mediated amine threads.
] A chemically assembled plating solution enriched with an activator, α, α'-dipyridyl or O-7 enanthroline, or their various conductors, which contains an inorganic compound of group IVB elements. .

[Effect]

In the present invention, since loquat glands are formed by biased polyimide mainly composed of units of general formula [I] described above, when applying electroless copper plating, it is difficult to resist alkaline plating solution. It shows great resistance and is not easily misunderstood. Therefore, the occurrence of family conflicts and pattern variations due to the common understanding of the polyimide loquat family can be prevented. Regarding the plating solution, however, SJ]
The liquid composition does not change due to dissolution of the liquid.

As a result, the polyimide insulating film is thick, and since electroless plating is performed without pattern distortion, it is possible to form a wiring layer with a high aspect ratio and a large thickness.

Furthermore, since there is little change in the mriy of the plating solution, the growth rate of the plating metal layer remains constant, resulting in good productivity.

Therefore, the yw shield plate obtained by the present invention is suitable for mounting electronic circuit elements such as ICs to form a hybrid IC. In particular, when used as a multilayer wiring board, it is suitable for mounting LSIs and the like, as it can cope with increased density of Ga-topped cans.

〔Example〕

Hereinafter, a central example of the present invention will be explained with reference to the drawings.

Examples of wiring boards for which the invention is applicable include those shown in FIGS. 1 to 4. However, the wiring board of the present invention is not limited to these.

The wiring board shown in Fig. 1 (!!) is provided with a thin copper layer 2 constituting a conductor pattern for IK and plating growth on the board, and an insulating film having a processing damage 5 on the copper thin film 2. It has a wiring pattern in which a polyimide double layer 3 is provided, and a steel plating layer 6 is provided inside the wire 5 to form a conductor wiring.

The disposed substrate shown in FIG.
-2, and when steel plating is used, the part protruding into the processed groove 5 of the chrome film 7-2 on the top layer is removed. It is the same as the one shown in Figure).

The flexible substrate shown in FIG. 6 1e1 has the following features, except that the polyimide cutter film is formed using a photosensitive polyimide precursor.
This is the same as shown in Figure 1 above.

The wiring board shown in FIG. 4 Fg+ is a multilayer part +1&'! which is obtained by logging and layering a polyimide side layer 5 and a steel plating layer 6 on the fIM board shown in the upper part 1c second case 1. +=
It is a board.

Next, embodiments of the wiring board and the manufacturing method thereof of the present invention will be described in detail.

First, prior to the service, the first
A polyamic acid varnish and a polyimide precursor varnish shown in the table were obtained.

100.9 ('0.5 mol) of 4,4'-diaminodiphenyl ether was dissolved in 15B+39 of N-methyl-2-pyrrolidone under a room air stream, and the diamine bath solution was combined. 5,5',4,4'-
Diphenyltetracarboxylic dianhydride 147 g (0
, 5 moles). Approximately 15℃ more after adding
The mixture was reacted for 5 hours at
A bath solution of polyamide Ill (A) was obtained.

A diamine bath solution was prepared by dissolving paraphenylene diamine 5Q (0.5 mol) in N,N-dimethylacetamide 1159y under a flowing air stream. Next, this solution was heated for 3.5 min while stirring while keeping the temperature at about 15°C by ice-cooling.
',4.4'-diphenyltetracarboxylic dianhydride i
47! 1 (0.5 mol) was removed. After the addition was completed, the reaction was further carried out at about 15°C for 5 hours, and then subjected to Gallo pressure using a filter with 5 μm holes to reduce the viscosity to 55 poise (25
A solution of the polyamide branched CB) of Table 1 A2 at 0°C) was prepared.

Polyamide content 35 colander) -4 (0, (J54 Mimino) a bath number of acid (,4) 20! (Polyamide enemy), 2,
6-bis(paraazidobenhydroxycyclohexanone 0.02y mol), 5-
CM, 7v-dimethylabil methacrylate 2.5.9
(0,0146 mol), glycerin O4l! 1 was dissolved in a bath, and then subjected to pressure using a filter with 1 μm pores,
A photosensitive polyimide precursor varnish of No. 1 Table 3 was obtained.

20 y of polyamic acid (B) bath solution (contains polyamic acid: 5.U 51C,2,6-bis(paraazidobenzal)-4-hydroxycyclohexanone 0.28 y l
0.75 mmol), 5-CN, N-dimethylamino)propyl methacrylate) 2.5! /(0,0
146 mol), triethylene glycol 0.71 km
Then, the mixture was subjected to 7IQ pressure using a filter with 1 μm pores to obtain a photosensitive polyimide varnish of Table 1 A4.

100 g (0.5 mol) of 4,4'-diaminodiphenyl ether was added to a mixture of N-methyl-2-pyrrolidone and N,7v-dimethylacetamide in a Muroki Kiryucho.
When it dissolved at 8.9℃, the diamine was released.

Next, while keeping this solution at a good temperature of 15°C by cooling with water, 147 t (0.57 l) of 5.5',4.4'-diphenyltetracarboxylic dianhydride was added while stirring. added. Polyamic acid (C
) solution is arrogant.

... (C) 2,6-bis(paraazidobenzal)-4-carpoxycycloa hexanone 0
．． 14y (0,55 mmol), 3-(N,N-dimethylamino)propyl methacrylate 2.11 (0,0
12 moles), triethylene glycol 0.75! / was dissolved in the bath, and then filtered under Gallo pressure using a filter with 1 μm pores to remove the photosensitive polyimide precursor bath solution of 1/I65.

Polyamide [(C') bath solution 209 used in A6-5
(3.0 g of violet containing holamidic acid), 2,6-
Bis(paraazidobenthal)-4-hydroquinecyclohexanone 0. IQ (0,35 mmol), 6-cn,
N-dimethylamino)propyl methacrylate) 2.1
1 (o, o12 mol) was dissolved and then filtered under pressure using a filter with 1 μm pores to obtain a photosensitive polyimide precursor solution as shown in Table 1/166.

In this example, the composition of the copper-free copper plating solution that can be used to form the steel plating layer 6 is as follows.
Shown in the table.

(Margin below) Example 1 Example 1 will be explained using FIG. 1.

On the alumina substrate 1, a plating growth pattern of 15 μm width was formed on the steel plate 2 (11th α). Next, a varnish of A61 polyamide ([(A)) was spun onto the substrate 1. This gold plate was cured by heating at 200°C for 60 minutes in a nitrogen gas atmosphere, then at 350°C for 50 minutes. Six polyimide glands with a thickness of 10 μm and having the repeating structure shown in Formula 1 were formed (FIG. 1b).

・・・C formula ■) Next, 0NIJR-2 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-spun as a photoresist on the polyimide group 1 and heated at 100°C.
Shun (1st Prisoner C) formed a 7-photoresist film 4 with a thickness of 1.8 μm by drying it for 30 minutes, then formed a punched pattern with a width of 101 IyIL using the well-known photolithography technique, and dried it at 150° C. for 60 minutes. It was heated (Fig. 1d). Next, the substrate is immersed in a polyimide etching solution (40°C) to selectively etch the exposed polyimide group, and the pattern of the photoresist group 4 is transferred to the polyimide M3 to form a processing bag 5, and the copper The pattern for plating growth of the thin film 2 was formed (Fig. 1e).

In this case, remove the photoresist group 4 that is no longer needed.
Figure 1 f), the substrate was immersed in the electroless steel plating solution No. 11 in Table 2 to form a steel plating Nll6 inside the processed polyimide. It was possible to form a thick copper dome (first stage).
Figure 5). At this time, the polyimide resin had excellent resistance to the electroless plating solution, and there was no fading.

Example 2 Implementation? ! Congratulations on l 2 using Figure 2 B) 3″′f
Ru.

On the alumina substrate 1, a chromium thin section 7-1 with a width of 15 μm,
A conductive pattern for plating growth consisting of 6 layers of copper thin film 2 and rim thin film 7-2 was formed (FIG. 2 α). Next, board 1
A varnish of /I62 polyamide (CB) was spin-coated on top, and the substrate was heat-cured in vacuum at 200°C for 60 minutes and then at 650°C for 60 minutes to give a thickness of 20 μm.
A polyimide film 3 having a repeating unit structure shown by the formula (2) was formed (FIG. 2b).

An organosilicon thread photomast layer 4 having a thickness of 11 LrIL was formed (FIG. 2C).

...(Formula ■) Next, poly(
1,1-dimethyl-2-p- and droxyphenylsilmethylene) 70 μm
150g Sumito 2m; soaked in toxyethanol, +i
A cleaning solution for silicon-based photoresistry was prepared. After spin-coating this coating on a substrate, it was heated to 75°C.
After baking for 0 minutes, a punch pattern with a width of 10 IJIIL was formed on the organosilicon thread photoresist gland 4 by photolithography technique (FIG. 2d).

By subjecting the above substrate to a reactive ion etching ((7, RIE) treatment using a scattering plasma, the exposed portion of the polyimide film 3 is selectively removed, resulting in a nearly vertical cross section with no taper. A reprocessed portion 5 was formed (Fig. 2e).

Next, remove the unnecessary silicon thread photoresist group 1, and then remove the chromium thin film 7 exposed in the processed groove.
-2 was selectively etched with a potassium ferricyanide/potassium hydroxide solution to expose the copper thin film 2 (FIG. 2j).

After this, the substrate is immersed in a second varnish 2 electroless copper plating solution to form and fill copper plating doves 6 inside the processed groove, so that the thickness of the plating layer is the same as the thickness of the polyimide group. A wiring with a thickness of 20 μm and an aspect ratio of 10 μm was formed (see Figure 2). At this time, the polyimide group showed excellent resistance to the plating solution and no patterning occurred.

Example 6 Example 5 will be explained using FIG. 5.

A conductor pattern for plating growth consisting of a 25 μm wide steel thin film 2 was formed on an alumina substrate 1 (FIG. 5 α). next,
The photosensitive polyimide precursor varnish of the first varnish 5 was spin-coated onto the substrate and dried at 85° C. for 60 minutes to form a 20-layer thick photosensitive polyimide faJ precursor layer 8 (Figure 6b). ]. Next, 5ooWI was applied through a predetermined photomask.
iii. Ultraviolet rays were irradiated for 100 seconds using a pressure water lamp.

Predetermined processing #iI5 in which the lower steel thin film 2 is exposed by developing with a mixed solution consisting of 4 volumes of N-methyl-2-pyrrolidone and 1 volume of ethanol, and then rinsing with ethanol.
was formed (Fig. 6C). Next, under a room atmosphere 120
C. for 60 minutes, 200.degree. C. for 50 minutes, and 400.degree. C. for 60 minutes to obtain a polyimide relief pattern having a repeating unit structure of formula I having a film thickness of 10 .mu.m. At this time, the photomask pattern is faithfully transferred,
A processed thread 5 with a width of 20 μm was formed (FIG. 3d).

Thereafter, the substrate was immersed in the electroless steel plating solution shown in Table 2 A5, and copper plating doves 6 were formed and filled inside the processed groove 5 to form a pattern M7m' with a thickness of 10 μm and a width of 20 μm ( 3rd pg). At this time, the polyimide film showed excellent resistance to the electroless cutting solution, and no film peeling or pattern sag was observed.

Examples 4 to 6 Using photosensitive polyimide nu precursor varnishes of /164 to 46 in Table 1, copper patterns were formed in the same manner as in Example 6. When the photosensitive polyimide precursor shown in Table 1 A4 was used, it was cured by heating and a polyimide film having the repeating unit km shown in the formula (2) was finally obtained. Also, Table 1
A polyimide having a repeating unit structure shown in Formula I was obtained from a photosensitive polyimide precursor having a surface rot of 5.6. In either case, the polyimide group showed excellent resistance to electroless plating solution, spread during immersion in the plating solution, and no pattern sagging was observed.

In addition, for Examples 4 to 6, the electroless plating solution shown in Table 2 A4 was used.

Example 7 Example 7 will be explained using the fourth section.

In this example, the multilayer part 11ii1 substrate was formed by repeating the polyimide tree B po and the described pattern forming process shown in Examples 1 and 2 above. In this case as well, the polyimide film was replaced during the electroless plating process, and no pattern sag was observed and it showed resistance to the electroless plating solution.

In this example, electroless plating g of the second coating 5 was used.

Comparative Example An attempt was made to form an edge layer on a steel part by the method shown in Example 1 using both sides of polyimide having a repeating unit structure of the formula (2) described later. Edges and pattern sag may occur and the aspect ratio may be incorrect (
However, a thick wiring layer could be formed in 7 days.

In addition, in this comparative example, the electroless plating solution of the second coating 1 was used.

Next, a demonstration example of the resistance of the polyimide side refill used in each of the above examples to the electroless steel plating solution will be explained with reference to Figure 5. The graph shows the thickness and thickness of the steel plated when it is immersed in an electroless steel plating solution, plotted against the immersion time. The Isao'ms plating solution used here is that shown in Table 2 A1.

The structure of the polyimide used for the polyimide resin layers α and b and its expansion conditions are as follows.

α: Boryamide *(, () varnish was spin-coated onto a silicon wafer, and varnish was applied at 200°C in a nitrogen atmosphere.
A polyimide film having a repeating unit structure of formula I and having a thickness of 10 tones was formed by heat curing at 650° C. for 60 minutes.

b: A polyamide precursor varnish consisting of 16 parts by weight of a polyimide precursor having a repeating unit structure of formula (2), 421 parts by weight of A', N-dimethylacetamide, and 42 parts by weight of N-methyl-2-pyrrolidone is placed on a silicon wafer. It was spin-coated and cured by heating at 200° C. for 60 minutes and then at 550° C. for 60 minutes in a family atmosphere to form a polyimide group having a repeating unit structure of formula (2) and having a float of 10 μm.

(Details below) As is clear from FIG. 5, the polyimide resin α having repeating units as a main component according to the present invention does not reduce its film thickness even when immersed in an electroless steel plating solution. However, the film thickness of the inverted IM A other than the present invention becomes thinner as time passes.

〔Effect of the invention〕

As described above, the method for forming a wiring pattern according to the present invention prevents sagging and pattern sag during immersion in an electroless plating solution due to the common understanding of polyimide tR glands.
It is possible to form a thick wiring layer with a narrow aspect ratio. Furthermore, since there is no common understanding of the insulating layer, there is no need to change the composition of the electroless plating solution. Therefore, the success rate of the firefly pigeon is constant, and its main attribute is also unclear.

[Brief explanation of the drawing]

Fig. 1 to Fig. 4 are respectively JWR side views showing the formation process in an embodiment of the distribution board according to the present invention, and Fig. 5 is a diagram showing the process of electroless plating of polyimide 5F resin according to the present invention and outside the present invention during 8L immersion. 2 is a graph showing the relationship between film thickness reduction and skin recovery time in FIG. 1...Substrate 2...Steel thin film 6...
Polyimide tree effect 4... Resist film 5... Processing 6... Copper plating layer 7-1, 7-
2...Chromium thin film 8...Photosensitive polyimide split body layer 9...Chromium thin film dimension n-dimension 0-NK') Anteropod'5 figure? (d) Mechusen・1 Basic talent rebellion? Fishing Thin 5 Force A1 Groove 5 Posoimi F Nojsu Sword U Toto

Claims (1)

[Claims] 1. A conductor pattern for plating growth is provided on the substrate, and an insulating film having a groove opening on the pattern is provided,
In addition, in a wiring board having a wiring pattern in which a conductor wiring is provided in the groove, the insulating film is formed by the following general formula [I
] A wiring board characterized by being formed from a polyimide resin whose main component is a repeating unit. ▲There are mathematical formulas, chemical formulas, tables, etc.▼ ...[I] However, in the general formula [I], R represents a divalent aromatic organic group. 2. 2. The wiring board according to claim 1, wherein a plurality of wiring pattern layers each comprising a conductor wiring and an insulating film are laminated to form a multilayer wiring board. 5. The wiring board according to claim 1 or 2, which is used to configure a hybrid IC by mounting circuit elements. 4. A conductive pattern for plating growth is formed on a substrate, an insulating film is formed on the substrate including the conductive pattern, a groove is formed in this insulating film to open on the conductive pattern, and then , in a wiring board forming method in which a conductor is formed and filled in the groove by electroless plating to form a conductor wiring, the insulating film is formed from a polyimide resin whose main component is a repeating unit of the following general formula [I]. A wiring board forming method characterized by: ▲There are mathematical formulas, chemical formulas, tables, etc.▼ ...[I] However, in the general formula [I], R represents a divalent aromatic organic group. 5. 5. The wiring board forming method according to claim 4, wherein the insulating film is made of a photosensitive polyimide resin which is converted by heat curing into a polyimide resin containing repeating units of general formula [I] as a main component. 6. 6. The wiring board forming method according to claim 4, wherein a plurality of wiring pattern layers each comprising a conductor wiring layer and an insulating film are laminated to form a multilayer wiring board.