JPH027190B2 - - Google Patents
Info
- Publication number
- JPH027190B2 JPH027190B2 JP58048139A JP4813983A JPH027190B2 JP H027190 B2 JPH027190 B2 JP H027190B2 JP 58048139 A JP58048139 A JP 58048139A JP 4813983 A JP4813983 A JP 4813983A JP H027190 B2 JPH027190 B2 JP H027190B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- voltage
- base layer
- pilot
- breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015556 catabolic process Effects 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000001960 triggered effect Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は降服電圧をこす過電圧がアノード・カ
ソード間に印加されると安全に電圧トリガするこ
とができる過電圧保護機能付サイリスタに関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a thyristor with an overvoltage protection function that can safely trigger a voltage when an overvoltage that exceeds the breakdown voltage is applied between an anode and a cathode.
サイリスタのアノード・カソード間に降服電圧
をこす過電圧が印加されると、数ｍＡ〜数10ｍＡ
の微少な降服電流で破壊してしまう。過電圧印加
による誤点弧で素子が破壊することを防止するた
め、一般には電源電圧の２〜３倍の定格電圧のサ
イリスタを使う。しかし、直流送電用サイリスタ
バルブなどのように、多数のサイリスタを直列接
続して使う装置では、１部のサイリスタがターン
オンに失敗すると、これらの少数のサイリスタに
定格電圧の数倍以上の過電圧が印加され、前述し
た定格電圧に余裕をみる方法では過電圧破壊を防
止することができない。そのため、過電圧の印加
を防止する外部保護回路が必要になつていた。こ
のような事情から過電圧が印加されても破壊しな
い過電圧保護機能付サイリスタが強く望まれてい
た。
When an overvoltage is applied between the anode and cathode of the thyristor that causes a breakdown voltage, the voltage decreases from several mA to several tens of mA.
It will be destroyed by a minute breakdown current. In order to prevent the element from being destroyed due to erroneous firing due to the application of overvoltage, a thyristor with a rated voltage two to three times the power supply voltage is generally used. However, in devices that use a large number of thyristors connected in series, such as thyristor valves for DC power transmission, if one of the thyristors fails to turn on, an overvoltage of several times the rated voltage or more will be applied to a small number of thyristors. Therefore, overvoltage breakdown cannot be prevented by the above-mentioned method of allowing a margin in the rated voltage. Therefore, an external protection circuit that prevents the application of overvoltage has become necessary. Under these circumstances, there has been a strong desire for a thyristor with an overvoltage protection function that does not break down even when overvoltage is applied.
第１図はこのような問題を解決すべく構成され
たサイリスタの概略断面図である。同図におい
て、１はＰエミツタ層、２はＮベース層、３はＰ
ベース層、４はＮエミツタ層である。Ｐエミツタ
層１の表面にはアノード電極５が配置され、ま
た、Ｎエミツタ層４はＰベース層３が一部露出し
た短絡エミツタ構造であつてその表面にはカソー
ド電極６が配置されてメインサイリスタMTが構
成されている。Ｎベース層２とＰベース層３から
形成される接合部J2の一部分が図示してあるよう
にカソード電極側の表面で終結しており、Ｎベー
ス層２の一部がカソード側に突出している。そし
て、Ｎエミツタ層４の内側に、補助Ｎエミツタ層
７と補助電極８を設けてパイロツトサイリスタ
PTを構成している。 FIG. 1 is a schematic cross-sectional view of a thyristor constructed to solve this problem. In the same figure, 1 is a P emitter layer, 2 is an N base layer, and 3 is a P emitter layer.
The base layer 4 is an N emitter layer. An anode electrode 5 is arranged on the surface of the P emitter layer 1, and the N emitter layer 4 has a short-circuited emitter structure in which the P base layer 3 is partially exposed. MT is configured. As shown in the figure, a part of the junction J2 formed by the N base layer 2 and the P base layer 3 terminates at the surface on the cathode electrode side, and a part of the N base layer 2 protrudes toward the cathode side. There is. Then, an auxiliary N emitter layer 7 and an auxiliary electrode 8 are provided inside the N emitter layer 4 to form a pilot thyristor.
It constitutes PT.
このメインサイリスタMTのアノードカソード
間に順方向に過電圧が印加されると、接合部J2の
湾曲部９に電界が集中し電圧降服が起る。電圧降
服によつて発生する降服電流IAVは、図示のよう
にＰエミツタ層１、Ｎベース層２、Ｐベース層
３、Ｎエミツタ層７から構成されるパイロツトサ
イリスタPTのゲート電流として働き、パイロツ
トサイリスタPTがターンオンするとこのターン
オン電流によつて、メインサイリスタMTが過電
圧トリガすることができる。 When an overvoltage is applied in the forward direction between the anode and cathode of the main thyristor MT, the electric field concentrates on the curved portion 9 of the junction J2 , causing a voltage drop. The breakdown current I AV generated by the voltage breakdown acts as a gate current of the pilot thyristor PT, which is composed of a P emitter layer 1, an N base layer 2, a P base layer 3, and an N emitter layer 7, as shown in the figure. When the thyristor PT turns on, this turn-on current allows the main thyristor MT to be triggered overvoltage.
ところが、このようなサイリスタでは降服電流
が湾曲部の狭い領域に集中し、メインサイリスタ
MTが充分にターンオンする前に素子が破壊して
しまう傾向にあり、高いオン電流上昇率（di／dt
耐量）で過電圧トリガできるサイリスタを実現す
ることが困難であつた。 However, in such a thyristor, the breakdown current is concentrated in a narrow area of the curved part, and the main thyristor is
The device tends to break down before the MT turns on sufficiently, resulting in a high rate of increase in on-current (di/dt).
It has been difficult to realize a thyristor that can be triggered by an overvoltage withstand voltage.
本発明はこのような事情を考慮してなされたも
ので、その目的は、過電圧の印加に対して、高い
di／dt耐量で電圧トリガすることができる過電圧
保護機能付サイリスタを提供することにある。
The present invention has been made in consideration of these circumstances, and its purpose is to provide high protection against the application of overvoltage.
An object of the present invention is to provide a thyristor with an overvoltage protection function that can be voltage-triggered with di/dt tolerance.
本発明は、サイリスタの一部分の他の領域より
順方向阻止電圧が低くなるような電圧降服領域手
段を設け、この領域で発生する順方向降服電流で
ターンオンするように高感度のパイロツトサイリ
スタ部を配した構造において、パイロツトサイリ
スタはウエハ中心部にリング状をなしてメインサ
イリスタのＮエミツタ層より深いＮエミツタ層を
もつて形成され、その内部に凹部を有し、前記電
圧降服領域はこの凹部の底に形成されるＰベース
層をＮベース層に突出させてその接合の一部に湾
曲部を設けて構成され、もつてパイロツトサイリ
スタの最小ゲートトリガ電流は前記電圧降服領域
の許容最大降服電流の1/2以下に設定されている
ことを特徴とする。
The present invention provides a voltage breakdown region means in which the forward blocking voltage is lower than that in other regions of a portion of the thyristor, and arranges a highly sensitive pilot thyristor section to be turned on by the forward breakdown current generated in this region. In this structure, the pilot thyristor is formed in the center of the wafer in a ring shape with an N emitter layer deeper than the N emitter layer of the main thyristor, and has a recess inside thereof, and the voltage breakdown region is located at the bottom of this recess. The P base layer formed on the P base layer protrudes from the N base layer and a curved portion is provided at a part of the junction thereof, so that the minimum gate trigger current of the pilot thyristor is 1 of the maximum allowable breakdown current in the voltage breakdown region. It is characterized by being set to /2 or less.
本発明によれば過電圧が印加された時に発生す
る微少な降服電流でパイロツトサイリスタが容易
に電圧トリガできるため、高いdi／dt耐量を得る
ことができる。さらにオン電圧など主要なサイリ
スタ特性を損うことなく電圧トリガ機能をサイリ
スタに組込むことができる。
According to the present invention, the pilot thyristor can be easily voltage-triggered by a minute breakdown current generated when an overvoltage is applied, so that a high di/dt tolerance can be obtained. Furthermore, a voltage trigger function can be incorporated into the thyristor without damaging the main thyristor characteristics such as on-state voltage.
以下、図面を参照して、本発明の実施例につい
て説明する。第２図は本発明の一実施例の過電圧
保護機能付サイリスタの概略断面図である。同図
において、Ｐエミツタ層１１、Ｎベース層１２、
Ｐベース層１３、Ｎエミツタ層１４からなる四層
構造のＰエミツタ層１１の表面にはアノード電極
１５を、また、短絡Ｎエミツタ層１４の表面には
カソード電極１６を配置してメインサイリスタ
MTを構成している。メインサイリスタMTの内
周部には、Ｐエミツタ層１１、Ｎベース層１２、
Ｐベース層１３を共用し、補助Ｎエミツタ層７と
補助電極８を設けてパイロツトサイリスタPTを
形成している。更にパイロツトサイリスタPTの
内周部には、湾曲部１９を持つたＰベース層２０
が配してある。この構造は例えば、Ｐベース層１
３を井戸型にエツチングで除去し、その後に再度
Ｐ型不純物を熱拡散しＰベース層２０を形成する
などして実現できる。あるいは又、Ｎ型ウエハの
状態で井戸型にエツチングして、これに両面から
Ｐ型不純物を拡散することで同様の構成を得るこ
ともできる。また、本実施例では、パイロツトサ
イリスタPTの補助Ｎエミツタ層１７をメインサ
イリスタMTのＮエミツタ層１４より深く拡散形
成し、パイロツトサイリスタPTのＰベース層横
方向抵抗を大きくしている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a schematic cross-sectional view of a thyristor with an overvoltage protection function according to an embodiment of the present invention. In the figure, a P emitter layer 11, an N base layer 12,
An anode electrode 15 is arranged on the surface of the P emitter layer 11 having a four-layer structure consisting of a P base layer 13 and an N emitter layer 14, and a cathode electrode 16 is arranged on the surface of the short-circuited N emitter layer 14 to form a main thyristor.
It constitutes MT. The inner periphery of the main thyristor MT includes a P emitter layer 11, an N base layer 12,
A pilot thyristor PT is formed by sharing the P base layer 13 and providing an auxiliary N emitter layer 7 and an auxiliary electrode 8. Furthermore, a P base layer 20 having a curved portion 19 is disposed on the inner circumference of the pilot thyristor PT.
are arranged. This structure is, for example, P base layer 1
This can be realized by etching away the P-type impurity 3 into a well shape, and then thermally diffusing the P-type impurity again to form the P base layer 20. Alternatively, a similar structure can be obtained by etching an N-type wafer into a well shape and diffusing P-type impurities from both sides thereof. Further, in this embodiment, the auxiliary N emitter layer 17 of the pilot thyristor PT is formed by diffusion deeper than the N emitter layer 14 of the main thyristor MT, thereby increasing the lateral resistance of the P base layer of the pilot thyristor PT.
このような構造において、アノード・カソード
電極間に順方向に過電圧が印加されると、湾曲部
１９に電界が集中し、そのとき湾曲部１９近傍に
発生する降服電流によつてパイロツトサイリスタ
PT、メインサイリスタMTが順次ターンオンす
る。この場合、実施例では、最初にターンオンす
るパイロツトサイリスタPTのゲート感度を十分
上げることによつてパイロツトサイリスタPTの
最小トリガ電流IGTを順方向降服電流の最大非破
壊値IR(nax)の少なくとも1/2以下にし、電圧トリガ
時にdi／dt耐量を大幅に改善したことを特徴とし
ている。 In such a structure, when an overvoltage is applied in the forward direction between the anode and cathode electrodes, the electric field concentrates on the curved portion 19, and the breakdown current generated near the curved portion 19 causes the pilot thyristor to
PT and main thyristor MT are turned on in sequence. In this case, in the embodiment, by sufficiently increasing the gate sensitivity of the pilot thyristor PT that turns on first, the minimum trigger current I GT of the pilot thyristor PT can be set to at least the maximum non-destructive value I R (nax) of the forward breakdown current. It is characterized by significantly improved di/dt tolerance during voltage triggering.
過電圧によつて発生する順方向降服電流でパイ
ロツトサイリスタが安全にターンオンする条件は
発明者らがおこなつた実験によれば第３図のよう
になる。同図において横軸は電圧トリガした時の
降服電流IRで、パイロツトサイリスタPTのIGTに
等しい値である。縦軸は電圧トリガした時の降服
電流（＝IGT）に対する各テストサンプルのdi／dt
耐量である。同図から明らかなようにIGTが小さ
い高感度パイロツトサイリスタを持つサイリスタ
ほど電圧トリガ時のdi／dt耐量は大きくなる。し
かしIGTが45ｍＡをこすパイロツトサイリスタを
持つサイリスタはいずれもdi／dt耐量が突然低下
し、安全に電圧トリガできなくなる。これは実験
に使つたテストサンプルでは、IR＞45ｍＡになる
と湾曲部１９が降服電流の許容値をこえ、パイロ
ツトサイリスタPTがターンオンする前に湾曲部
１９が破壊してしまうからである。また、降服電
流の最大非破壊値IR（max）＝45ｍＡの1/2以下に
IGTを設定しないと、パイロツトサイリスタPTの
ゲート感度を改善してもdi／dt耐量を大幅に改善
することが出来ないことがわかる。この実験事実
は過電圧によつて安全に電圧トリガし、さらに、
di／dt耐量を大幅に改善するには少くともIGT＜1/
２IR（max）の条件を満足する高感度パイロツトサ
イリスタを湾曲部１９の周囲に配置してやる必要
があることを意味する。 According to experiments conducted by the inventors, the conditions under which the pilot thyristor is safely turned on by the forward breakdown current generated by overvoltage are as shown in FIG. In the figure, the horizontal axis is the breakdown current I R when voltage triggered, which is a value equal to I GT of the pilot thyristor PT. The vertical axis is the di/dt of each test sample with respect to the breakdown current (=I GT ) when voltage triggered
It is a tolerable amount. As is clear from the figure, the smaller the I GT of a thyristor with a high-sensitivity pilot thyristor, the greater the di/dt tolerance when triggered by a voltage. However, any thyristor with a pilot thyristor whose I GT draws 45 mA suddenly loses its di/dt capability and cannot be safely voltage triggered. This is because in the test sample used in the experiment, when I R >45 mA, the bending portion 19 exceeds the allowable breakdown current value, and the bending portion 19 is destroyed before the pilot thyristor PT is turned on. In addition, the maximum non-destructive value of the breakdown current I R (max) = 45 mA or less
It can be seen that unless I GT is set, the di/dt tolerance cannot be significantly improved even if the gate sensitivity of the pilot thyristor PT is improved. This experimental fact shows that voltage triggering can be done safely by overvoltage, and furthermore,
To significantly improve di/dt tolerance, at least I GT <1/
This means that it is necessary to arrange a highly sensitive pilot thyristor that satisfies the condition of 2I R (max) around the curved portion 19.
IR（max）の値は同じく発明者らがおこなつた
実験結果によれば、湾曲部１９の周辺長にほぼ比
例して大きくなる。しかしこの周辺長を余り大き
くすると、急峻な立上りの電圧ノイズが印加され
た時にこの領域で発生する変化電流が周辺長の２
乗に比例して増大し、di／dt耐量の増加より、
dv／dt耐量の低下の方が大きくなるため、無制
限に湾曲部の周辺長を大きくできない。従つて、
dv／dt耐量などの主要なサイリスタ特性を犠牲
にしないでdi／dt耐量の大きな過電圧保護機能付
サイリスタを実現するには、IGTの小さい高感度
パイロツトサイリスタで、湾曲部１９を囲む方法
がすぐれている。本発明の実施例では第２図に示
してあるようにパイロツトサイリスタPTのＮエ
ミツタ層１７の下部のＰベース層の幅をメインサ
イリスタMTのＰベース層幅より狭くし、パイロ
ツトサイリスタPTのＰベース層抵抗を大きくし
てパイロツトサイリスタPTのゲート感度を大幅
に向上させている。4kVサイリスタを使つた具体
的実施例では、湾曲部１９の直径0.5mm（周辺長
1.57mm）にし、IR（max）＝40ｍＡ〜45ｍＡとし、
IGT＜５ｍＡになるようにパイロツトサイリスタ
PTのＰベース層抵抗を約2000Ω／□にコントロ
ールした場合、dv／dt1500V／μs、di／dt
250A／μsの過電圧保護機能付サイリスタを実現
できた。 According to the experimental results also conducted by the inventors, the value of I R (max) increases approximately in proportion to the peripheral length of the curved portion 19. However, if this peripheral length is made too large, the changing current generated in this region when voltage noise with a steep rise is applied will be 2 times the peripheral length.
The increase in di/dt capacity increases in proportion to the
Since the decrease in dv/dt tolerance becomes greater, the peripheral length of the curved portion cannot be increased indefinitely. Therefore,
In order to realize a thyristor with an overvoltage protection function that has a large di/dt withstand capacity without sacrificing the main thyristor characteristics such as dv/dt withstand capacity, an excellent method is to surround the curved part 19 with a small, high-sensitivity pilot thyristor of I GT . ing. In the embodiment of the present invention, as shown in FIG. 2, the width of the P base layer below the N emitter layer 17 of the pilot thyristor PT is narrower than the width of the P base layer of the main thyristor MT. By increasing the layer resistance, the gate sensitivity of the pilot thyristor PT is greatly improved. In a specific embodiment using a 4 kV thyristor, the diameter of the curved portion 19 is 0.5 mm (peripheral length
1.57mm), I R (max) = 40mA to 45mA,
Pilot thyristor so that I GT <5mA
When controlling the P base layer resistance of PT to approximately 2000Ω/□, dv/dt1500V/μs, di/dt
We were able to create a thyristor with 250A/μs overvoltage protection function.
このように本実施例によればdv／dt耐量など
主要なサイリスタ特性を犠牲にすることなく、
di／dt耐量を大幅に改善した過電圧保護機能付サ
イリスタを実現することができる。またパイロツ
トサイリスタはウエハの中心部にリング状をなし
て構成され、かつその内部に電圧降服領域が設け
られるから、降服電流は必ずパイロツトサイリス
タのＰベース層を通り、これにより確実な電圧ト
リガが行われる。 In this way, according to this embodiment, the main thyristor characteristics such as dv/dt tolerance are not sacrificed.
It is possible to realize a thyristor with an overvoltage protection function that has significantly improved di/dt withstand capability. In addition, the pilot thyristor is constructed in a ring shape at the center of the wafer, and a voltage breakdown region is provided inside the ring, so the breakdown current always passes through the P base layer of the pilot thyristor, thereby ensuring reliable voltage triggering. be exposed.
前述した実施例では湾曲部１９を持つた電圧降
服領域を高ゲート感度のパイロツトサイリスタ
PTでかこんだ構造のサイリスタで説明したが、
IGT＜１／２IR（max）の条件を満足していれば、降服
電流でサイリスタ部をトリガする方法はどんな方
法でもよい。又、パイロツトサイリスタで囲まれ
る領域のＮベース層の不純物濃度やキヤリヤライ
フタイムを他の領域より大きくする方法で降服電
圧をコントロールしてもよい。又、本発明では
dV／dt耐量を犠牲にしないでパイロツトサイリ
スタのゲート感度を改善しているので、湾曲部近
傍に光トリガ信号を照射できるようにすれば、す
ぐれた特性を持つた過電圧保護機能付光トリガサ
イリスタを実現できることは言うまでもない。 In the embodiment described above, the voltage breakdown region having the curved portion 19 is formed by a pilot thyristor with high gate sensitivity.
I explained using a thyristor with a structure surrounded by PT,
Any method may be used to trigger the thyristor section with the breakdown current as long as the condition of I GT <1/2I R (max) is satisfied. Alternatively, the breakdown voltage may be controlled by making the impurity concentration and carrier lifetime of the N base layer in the region surrounded by the pilot thyristor larger than in other regions. Moreover, in the present invention
Since the gate sensitivity of the pilot thyristor has been improved without sacrificing the dV/dt withstand capability, if the optical trigger signal can be irradiated near the curved part, an optical trigger thyristor with an overvoltage protection function with excellent characteristics can be created. It goes without saying that this can be achieved.
第１図は従来のサイリスタの構造例を示す図、
第２図は本発明の一実施例のサイリスタの構造を
示す図、第３図は本発明の根拠となつた実験結果
を示す図である。
１１……Ｐエミツタ層、１２……Ｎベース層、
１３……Ｐベース層、１４……Ｎエミツタ層、１
５……アノード電極、１６……カソード電極、１
７……補助Ｎエミツタ層、１８……補助電極、１
９，１９′……湾曲部、MT……メインサイリス
タ、PT……パイロツトサイリスタ。
Figure 1 is a diagram showing an example of the structure of a conventional thyristor.
FIG. 2 is a diagram showing the structure of a thyristor according to an embodiment of the present invention, and FIG. 3 is a diagram showing experimental results that are the basis of the present invention. 11...P emitter layer, 12...N base layer,
13...P base layer, 14...N emitter layer, 1
5... Anode electrode, 16... Cathode electrode, 1
7... Auxiliary N emitter layer, 18... Auxiliary electrode, 1
9,19'...Bent part, MT...Main thyristor, PT...Pilot thyristor.
Claims (1)
域より順方向阻止電圧が低い電圧降服領域を設
け、この領域で発生する降服電流でターンオンす
るように配置されたパイロツトサイリスタを少な
くとも一つ以上組込んだサイリスタにおいて、ウ
エハ中心部にリング状をなしてメインサイリスタ
より深いＮエミツタ層を有するパイロツトサイリ
スタが形成され、その内部に凹部を有し、前記電
圧降服領域はこの凹部の底でＰベース層の一部を
Ｎベース層内に突出させてその接合の一部に湾曲
部を設けて構成し、もつて前記パイロツトサイリ
スタの最小ゲートトリガ電流を前記電圧降服領域
の許容最大降服電流の1/2に設定したことを特徴
とするサイリスタ。 ２ 前記電圧降服領域は、光トリガ信号を照射で
きるようにした特許請求の範囲第１項記載のサイ
リスタ。[Claims] 1. It has a PNPN four-layer structure, and is arranged such that a voltage breakdown region having a lower forward blocking voltage than other regions is provided in a part of the structure, and is turned on by a breakdown current generated in this region. In a thyristor incorporating at least one pilot thyristor, the pilot thyristor is formed in the center of the wafer in a ring shape and has an N emitter layer deeper than the main thyristor, and has a recess inside thereof, and the voltage breakdown region is A part of the P base layer protrudes into the N base layer at the bottom of this recess, and a curved part is provided at a part of the junction, thereby controlling the minimum gate trigger current of the pilot thyristor in the voltage breakdown region. A thyristor characterized by having a maximum allowable breakdown current set to 1/2. 2. The thyristor according to claim 1, wherein the voltage breakdown region can be irradiated with an optical trigger signal.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4813983A JPS59172771A (en) | 1983-03-23 | 1983-03-23 | Thyristor |
| EP19830110486 EP0108961B1 (en) | 1982-11-15 | 1983-10-20 | Thyristor device protected from an overvoltage |
| DE8383110486T DE3369234D1 (en) | 1982-11-15 | 1983-10-20 | Thyristor device protected from an overvoltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4813983A JPS59172771A (en) | 1983-03-23 | 1983-03-23 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59172771A JPS59172771A (en) | 1984-09-29 |
| JPH027190B2 true JPH027190B2 (en) | 1990-02-15 |
Family
ID=12795005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4813983A Granted JPS59172771A (en) | 1982-11-15 | 1983-03-23 | Thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59172771A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3155797B2 (en) * | 1991-12-26 | 2001-04-16 | 株式会社日立製作所 | Overvoltage self-protection semiconductor device and semiconductor circuit using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413275A (en) * | 1977-07-01 | 1979-01-31 | Internatl Rectifier Corp Japan Ltd | Controlled rectifying element of semiconductor |
-
1983
- 1983-03-23 JP JP4813983A patent/JPS59172771A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413275A (en) * | 1977-07-01 | 1979-01-31 | Internatl Rectifier Corp Japan Ltd | Controlled rectifying element of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59172771A (en) | 1984-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4012761A (en) | Self-protected semiconductor device | |
| US4087834A (en) | Self-protecting semiconductor device | |
| KR940010555B1 (en) | Semiconductor device with protecting function from over voltage | |
| US4060825A (en) | High speed high power two terminal solid state switch fired by dV/dt | |
| EP0100136B1 (en) | Thyristor with a self-protection function for breakover turn-on-failure | |
| JPH0213824B2 (en) | ||
| US4142201A (en) | Light-controlled thyristor with anode-base surface firing | |
| US6066864A (en) | Thyristor with integrated dU/dt protection | |
| EP0190162B1 (en) | Controlled turn-on thyristor | |
| US4502072A (en) | FET Controlled thyristor | |
| US4595939A (en) | Radiation-controllable thyristor with multiple, non-concentric amplified stages | |
| JPH027190B2 (en) | ||
| US4176371A (en) | Thyristor fired by overvoltage | |
| US5003369A (en) | Thyristor of overvoltage self-protection type | |
| JPH06117942A (en) | Semiconductor device | |
| JPS62160764A (en) | Semiconductor device having overvoltage protecting function | |
| CA1055165A (en) | Thyristor fired by overvoltage | |
| JPH0128689Y2 (en) | ||
| JP3149054B2 (en) | Semiconductor device with self-protection function | |
| HU222329B1 (en) | Bistable photodiode | |
| CA1088213A (en) | Self-protecting semiconductor device | |
| CA1242034A (en) | Controlled turn-on thyristor | |
| JPH0210585B2 (en) | ||
| JP2688521B2 (en) | Self-protected thyristor | |
| JPS6152586B2 (en) |