JPH0269987A - Semiconductor laser array device - Google Patents

Semiconductor laser array device

Info

Publication number
JPH0269987A
JPH0269987A JP63221906A JP22190688A JPH0269987A JP H0269987 A JPH0269987 A JP H0269987A JP 63221906 A JP63221906 A JP 63221906A JP 22190688 A JP22190688 A JP 22190688A JP H0269987 A JPH0269987 A JP H0269987A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser array
array device
solder
protrusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63221906A
Other languages
Japanese (ja)
Inventor
Yutaka Nagai
豊 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63221906A priority Critical patent/JPH0269987A/en
Publication of JPH0269987A publication Critical patent/JPH0269987A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To ensure the independent operation of individual lasers by establishing protrusions between pattern electrodes on a heatsink. CONSTITUTION:Protrusions 2 are formed on an SiC heatsink 1 by processing. The protrusions 2 are sized 10 to 50mum in width (W) and 3 to 20mum in height (H) so that the solder is prevented from flowing from one laser to another and the upper parts of the protrusions are not brought into contact with a semiconductor laser array device when the device and the SiC heatsink 1 are adhered. By using the SiC heatsink 1 having such protrusions 2, an electric separation of each laser can be conducted without any trouble which is supported to be caused by mutual contact of the solder which flows out from between each laser and pattern electrodes.

Description

【発明の詳細な説明】 ［産業上の利用分野） この発明は半導体レーザアレイ装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser array device.

［従来の技術１ 第３，４図は例えば常包らが６３年度春季応物予稿集第
３分冊８９９頁で示された、従来の半導体レーザアレイ
装置を示す平面図及び拡大側断面である。図において、
（１）はＳｉＣヒートシンク、（３）はパターン電極、
（４）はＰ型半導体基板、（５）はＰ型クラッド層、（
６）は活性層、（７）はＮ型クラッド層、（８）はコン
タクト層、（９）はＮｆｉ極、（１０）はハンダ、（１
１）はＰ電極、（１２）は絶縁膜を示す。[Prior Art 1] Figures 3 and 4 are a plan view and an enlarged side cross-sectional view of a conventional semiconductor laser array device, which was disclosed, for example, by Tsunekazu et al. in the 1963 Spring Research Proceedings, Vol. 3, page 899. In the figure,
(1) is a SiC heat sink, (3) is a pattern electrode,
(4) is a P-type semiconductor substrate, (5) is a P-type cladding layer, (
6) is the active layer, (7) is the N-type cladding layer, (8) is the contact layer, (9) is the Nfi pole, (10) is the solder, (1
1) indicates a P electrode, and (12) indicates an insulating film.

次に動作について説明する。パターン電！　（３）が負
、ｐｔ極（１１）が正となるように電圧を印加すると電
流はＰ［極（１１）　−Ｐ型半導体基板（４）　−ｐ型
り？　ツ）’層（５）　−活性／１ｌ（６）　−Ｎ型ク
ラッド層（７）−コンタクト層（８）　−Ｎ　［極（９
）−ハンダ（１０）−パターン電極（３）という経路で
流れる。この時、活性層（６）ではＰ、Ｎ型クラッド層
（５）、　（７）とのバンドギャップ差により電子、ホ
ールが閉じ込められる。これらの電子、ホールが活性層
のバンドギャップとほぼ等しいエネルギーを持つ光子に
誘発されて発光再結合して誘導放出光が発生する。電流
がしきい値を越えると誘導放出光がレーザ共振器自身の
損失に打ち勝ち、レーザ光が共振器外部に放射される。Next, the operation will be explained. Pattern electric! When a voltage is applied so that (3) is negative and the pt pole (11) is positive, the current is P[pole (11) - P type semiconductor substrate (4) - p type? )' layer (5) - active/1l (6) - N-type cladding layer (7) - contact layer (8) - N [pole (9
) - solder (10) - pattern electrode (3). At this time, electrons and holes are confined in the active layer (6) due to the band gap difference between the P and N-type cladding layers (5) and (7). These electrons and holes are induced by photons with energy approximately equal to the band gap of the active layer and recombine radiatively to generate stimulated emission light. When the current exceeds a threshold, the stimulated emission light overcomes the loss of the laser resonator itself, and the laser light is radiated outside the resonator.

半導体レーザアレイ装置は同一半導体基板（４）上に複
数個のレーザを具備し、一つの装置から複数のレーザビ
ームが得られるようにしたものである。A semiconductor laser array device is equipped with a plurality of lasers on the same semiconductor substrate (4) so that a plurality of laser beams can be obtained from one device.

以下、半導体レーザアレイ素子は半導体基板（４）上に
形成された複数個のレーザを指し、半導体レーザアレイ
装置は前者とヒートシンク等を含めた装置全体も指すこ
ととする。第４図で示すようにＳｉＣ、ＢｅＯ等の絶縁
物で構成されたヒートシンク（１）上でパターン電極グ
されたｔ　ｍ　（３）上にちょうど個々のレーザのＮｔ
極（９）がくるような位置でハンダ（１０）で接着され
ている。個々のパターン電Ｗ　（３）は電気的に分離さ
れているので、半導体レーザアレイ素子中の個々のレー
ザを互いに独立に駆動することが可能である。Hereinafter, the term "semiconductor laser array element" refers to a plurality of lasers formed on a semiconductor substrate (4), and the term "semiconductor laser array device" refers to the entire device including the former and a heat sink. As shown in Fig. 4, the Nt of each laser is exactly on the patterned electrode tm (3) on the heat sink (1) made of an insulator such as SiC or BeO.
It is bonded with solder (10) at a position where the pole (9) is located. Since the individual pattern electrodes W (3) are electrically isolated, it is possible to drive the individual lasers in the semiconductor laser array element independently of each other.

以上のような半導体レーザアレイ装置は、データの並列
転送による光ディスクの高速化等に有用な光源である。The semiconductor laser array device as described above is a light source useful for increasing the speed of optical disks through parallel data transfer.

この半導体レーザアレイ装置の組立方法を以下に簡単に
説明する。The method of assembling this semiconductor laser array device will be briefly explained below.

まず、個々のレーザのＮ電極（９）上にハンダ材（１０
）から成る膜を形成する。次にＳｉＣヒートシンク（１
）をハンダ（１０）が十分に融解している状態になる程
熱する。ヒートシンク（１）上に個々のＮ電極（９）と
パターン電極（３）が一致するよう接着する。ヒートシ
ンク（１）をハンダ（１０）の融解温度以下にして固化
させることにより半導体レーザアレイ装置が完成する。First, solder material (10
) to form a film consisting of Next, the SiC heat sink (1
) is heated until the solder (10) is sufficiently melted. The individual N electrodes (9) and the pattern electrodes (3) are bonded onto the heat sink (1) so that they match. A semiconductor laser array device is completed by solidifying the heat sink (1) at a temperature below the melting temperature of the solder (10).

〔発明が解決しようとする課題ｊ 従来の半導体レーザアレイ装置は以上のよう（支）構成
されているので、実用上の観点から、個々のレーザの間
隔は短かい方が望ましい。ところが間隔を短かくすると
レーザアレイ素子をヒートシンク上のパターン電極に接
着する際に個々のレーザのハンダの内のはみ出した部分
がレーザ間で接触し、電気的な分離が失なわれるという
問題点があった。[Problem to be Solved by the Invention j] Since the conventional semiconductor laser array device is configured as described above, from a practical point of view, it is desirable that the distance between the individual lasers be short. However, when the distance is shortened, when the laser array element is bonded to the pattern electrode on the heat sink, the protruding portions of the solder of the individual lasers come into contact with each other, resulting in a loss of electrical isolation. there were.

この発明は上記のような問題点を解消するためになされ
たもので、半導体レーザアレイ中の制置のし〜ザの独立
駆動が損なわれないような半導体レーザアレイ装置を得
ることを目的とする。This invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor laser array device in which the independent driving of the restraints and lasers in the semiconductor laser array is not impaired. .

［課題を解決するための手段ｊ この発明に係る半導体レーザアレイ装置は、ヒトシンク
上の個々のパターン電極間に凸状の突起部を設けるよう
にしたものである。[Means for Solving the Problems j] A semiconductor laser array device according to the present invention is such that a convex projection is provided between individual pattern electrodes on a human sink.

［作用ｊ この発明における半導体レーザアレイ装置は個々のパタ
ーン電極間に凸状の突起部が設けられているので、個々
のレーザとパターン電極の間からはみ出したハンダはこ
の突起部によって他方のレーザからはみ出したハンダと
の接触を防止できる。[Operation j] Since the semiconductor laser array device according to the present invention is provided with a convex protrusion between each pattern electrode, the solder protruding from between each laser and the pattern electrode is removed from the other laser by this protrusion. Contact with protruding solder can be prevented.

［実施例［ 以下、この発明の一実施例を図について説明する。第１
図はこの発明の一実施例による半導体レーザアレイ装置
の拡大側断面図であり、図において、（１）はＳｉＣヒ
ートシンク、（２）は凸状の突起部、（３）はパターン
電極、（４）はＰ型半導体基板、（５）はＰ型クラッド
層、（６）は活性層、（７）はＮ型りフッド層、（８）
はコンタクト層、（９）はＮｔ極、（１０）はハンダ（
１１）はＰ電極、（１２）は絶縁膜を示す。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
The figure is an enlarged side sectional view of a semiconductor laser array device according to an embodiment of the present invention. In the figure, (1) is a SiC heat sink, (2) is a convex projection, (3) is a pattern electrode, and (4) is a ) is a P-type semiconductor substrate, (5) is a P-type cladding layer, (6) is an active layer, (7) is an N-type hood layer, (8)
is the contact layer, (9) is the Nt electrode, and (10) is the solder (
11) is a P electrode, and (12) is an insulating film.

この発明の半導体レーザアレイ装置の動作は上記従来の
ものと同様であるので説明は省略する。The operation of the semiconductor laser array device of the present invention is the same as that of the conventional device described above, so a description thereof will be omitted.

この発明の半導体レーザアレイ装置のＳＩＣヒートシン
ク（１）は第２図に示されるような断面形状を有してい
る。図中の突起部（２）はＳｉＣを加工することにより
形成する。突起部の大きさは、幅Ｗは加工上及び効果の
観点から１０μｍ≦Ｗ≦５０ｕｍの範囲が望ましい。ま
た、高さＨはハンダが一方のレーザ側から他方のレーザ
側へ流れるのを十分に防止でき、かつ半導体レーザアレ
イ素子とＳｉＣヒートシンク（１）接着時に突起部（２
）の上部が素子に接触しないような高さの範囲、つまり
３μｍ≦Ｈ≦２０μｍの範囲が望ましい。The SIC heat sink (1) of the semiconductor laser array device of the present invention has a cross-sectional shape as shown in FIG. The protrusion (2) in the figure is formed by processing SiC. Regarding the size of the protrusion, the width W is preferably in the range of 10 μm≦W≦50 μm from the viewpoint of processing and effectiveness. In addition, the height H can sufficiently prevent the solder from flowing from one laser side to the other laser side, and the protrusion (2
) is desirably in a height range such that the upper part thereof does not come into contact with the element, that is, a range of 3 μm≦H≦20 μm.

以上のような突起部（２）を有するＳｉＣヒートシンク
（１）を用いる事により、個々のレーザとパターン電極
（３）の間からはみ出したハンダが互いに接触して、個
々のレーザの電気的な分離が損なわれるということを容
易にかつ確実に防止することができる。By using the SiC heat sink (1) having the projections (2) as described above, the solder protruding from between the individual lasers and the pattern electrodes (3) comes into contact with each other, thereby electrically separating the individual lasers. can be easily and reliably prevented from being damaged.

なお、上記実施例では半導体レーザアレイ装置の場合に
ついて示したが、０ＦＩＣのように同一基板上にいろい
ろな素子をハンダによって接着せねばならない場合には
、上述した方法を用いると容易にかつ確実に個々の素子
を電気的に分離することが可能である。Although the above example deals with a semiconductor laser array device, when various elements must be bonded to the same substrate using solder, such as in an 0FIC, the method described above can be used easily and reliably. It is possible to electrically isolate individual elements.

〔発明の効果１ 以上のように、この発明によればヒートシンク上に突起
部を形成したので、装置が容易にできるようになるとい
う効果がある。[Effect 1 of the Invention As described above, according to the present invention, since the protrusion is formed on the heat sink, there is an effect that the device can be easily constructed.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の一実施例による半導体レーザアレイ
装置を示す拡大側断面図、第２図は第１図のヒートシン
ク部分を示す拡大側面図、第３図は従来の半導体レーザ
アレイ装置を示す拡大側断面図、第４図は半導体レーザ
アレイ装置を示す平面図である。 図において、（１）はＳｉＣヒートシンク、（２）は凸
状の突起部、（３）はパターン電極、（４）はＰ型半導
体基板、（５）はＰ型クラッド層、（６）は活性層、（
７）はＮ型クラッド層、（８）はコンタクト層、（９）
はＮ電極、（１０）はハンダ、（１１）はｐｔ極、（１
２）は絶縁膜である。 なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is an enlarged side cross-sectional view showing a semiconductor laser array device according to an embodiment of the present invention, FIG. 2 is an enlarged side view showing the heat sink portion of FIG. 1, and FIG. 3 is a conventional semiconductor laser array device. The enlarged side sectional view and FIG. 4 are plan views showing the semiconductor laser array device. In the figure, (1) is a SiC heat sink, (2) is a convex projection, (3) is a pattern electrode, (4) is a P-type semiconductor substrate, (5) is a P-type cladding layer, and (6) is an active layer,(
7) is an N-type cladding layer, (8) is a contact layer, (9)
is N electrode, (10) is solder, (11) is PT electrode, (1
2) is an insulating film. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 同一半導体基板上に形成された複数の半導体レーザを個
々の該半導体レーザに対応するようあらかじめ設けられ
た複数のパターン電極を具備している絶縁性のヒートシ
ンク上に個々の該半導体レーザが個々の該パターン電極
にハンダで接着するように構成した半導体レーザアレイ
装置において、個々のパターン電極間に凸状の突起部が
設けられていることを特徴とする半導体レーザアレイ装
置。A plurality of semiconductor lasers formed on the same semiconductor substrate are placed on an insulating heat sink having a plurality of pattern electrodes provided in advance to correspond to the individual semiconductor lasers. 1. A semiconductor laser array device configured to be bonded to pattern electrodes with solder, characterized in that a convex protrusion is provided between individual pattern electrodes.
JP63221906A 1988-09-05 1988-09-05 Semiconductor laser array device Pending JPH0269987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63221906A JPH0269987A (en) 1988-09-05 1988-09-05 Semiconductor laser array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63221906A JPH0269987A (en) 1988-09-05 1988-09-05 Semiconductor laser array device

Publications (1)

Publication Number Publication Date
JPH0269987A true JPH0269987A (en) 1990-03-08

Family

ID=16774011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63221906A Pending JPH0269987A (en) 1988-09-05 1988-09-05 Semiconductor laser array device

Country Status (1)

Country Link
JP (1) JPH0269987A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227931A (en) * 2006-02-22 2007-09-06 Samsung Electro Mech Co Ltd Method of manufacturing high-output array-type semiconductor laser device
US20160218482A1 (en) * 2015-01-27 2016-07-28 Parviz Tayebati Solder-creep management in high-power laser devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227931A (en) * 2006-02-22 2007-09-06 Samsung Electro Mech Co Ltd Method of manufacturing high-output array-type semiconductor laser device
US8153507B2 (en) 2006-02-22 2012-04-10 Samsung Led Co., Ltd. Method of manufacturing high power array type semiconductor laser device
US20160218482A1 (en) * 2015-01-27 2016-07-28 Parviz Tayebati Solder-creep management in high-power laser devices
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
US20180375297A1 (en) * 2015-01-27 2018-12-27 Parviz Tayebati Solder-creep management in high-power laser devices
US11196234B2 (en) * 2015-01-27 2021-12-07 TeraDiode, Inc. Solder-creep management in high-power laser devices

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