JPH0268435U - - Google Patents

Info

Publication number
JPH0268435U
JPH0268435U JP14763488U JP14763488U JPH0268435U JP H0268435 U JPH0268435 U JP H0268435U JP 14763488 U JP14763488 U JP 14763488U JP 14763488 U JP14763488 U JP 14763488U JP H0268435 U JPH0268435 U JP H0268435U
Authority
JP
Japan
Prior art keywords
etching
emission intensity
end point
plasma emission
intensity curve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14763488U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14763488U priority Critical patent/JPH0268435U/ja
Publication of JPH0268435U publication Critical patent/JPH0268435U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP14763488U 1988-11-11 1988-11-11 Pending JPH0268435U (bg)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14763488U JPH0268435U (bg) 1988-11-11 1988-11-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14763488U JPH0268435U (bg) 1988-11-11 1988-11-11

Publications (1)

Publication Number Publication Date
JPH0268435U true JPH0268435U (bg) 1990-05-24

Family

ID=31418220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14763488U Pending JPH0268435U (bg) 1988-11-11 1988-11-11

Country Status (1)

Country Link
JP (1) JPH0268435U (bg)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206275A (ja) * 2008-02-27 2009-09-10 Hitachi High-Technologies Corp エッチング終点判定方法
JP2012238734A (ja) * 2011-05-12 2012-12-06 Fujitsu Semiconductor Ltd 半導体装置の製造方法及半導体製造装置
JP2013102215A (ja) * 2013-01-31 2013-05-23 Hitachi High-Technologies Corp プラズマエッチング装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206275A (ja) * 2008-02-27 2009-09-10 Hitachi High-Technologies Corp エッチング終点判定方法
JP2012238734A (ja) * 2011-05-12 2012-12-06 Fujitsu Semiconductor Ltd 半導体装置の製造方法及半導体製造装置
JP2013102215A (ja) * 2013-01-31 2013-05-23 Hitachi High-Technologies Corp プラズマエッチング装置

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