JPH0265336U - - Google Patents
Info
- Publication number
- JPH0265336U JPH0265336U JP14449688U JP14449688U JPH0265336U JP H0265336 U JPH0265336 U JP H0265336U JP 14449688 U JP14449688 U JP 14449688U JP 14449688 U JP14449688 U JP 14449688U JP H0265336 U JPH0265336 U JP H0265336U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- extending
- drain
- source
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14449688U JPH0265336U (pl) | 1988-11-05 | 1988-11-05 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14449688U JPH0265336U (pl) | 1988-11-05 | 1988-11-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0265336U true JPH0265336U (pl) | 1990-05-16 |
Family
ID=31412257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14449688U Pending JPH0265336U (pl) | 1988-11-05 | 1988-11-05 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0265336U (pl) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108679A (ja) * | 2004-10-01 | 2006-04-20 | Internatl Rectifier Corp | 電流検出電極を有するiii族窒化物半導体装置 |
-
1988
- 1988-11-05 JP JP14449688U patent/JPH0265336U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108679A (ja) * | 2004-10-01 | 2006-04-20 | Internatl Rectifier Corp | 電流検出電極を有するiii族窒化物半導体装置 |