JPH0265238A - Semiconductor integrated device - Google Patents

Semiconductor integrated device

Info

Publication number
JPH0265238A
JPH0265238A JP21752388A JP21752388A JPH0265238A JP H0265238 A JPH0265238 A JP H0265238A JP 21752388 A JP21752388 A JP 21752388A JP 21752388 A JP21752388 A JP 21752388A JP H0265238 A JPH0265238 A JP H0265238A
Authority
JP
Japan
Prior art keywords
signal
signals
shielding
shield
noise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21752388A
Other languages
Japanese (ja)
Inventor
Yasushige Furuya
安成 降矢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP21752388A priority Critical patent/JPH0265238A/en
Publication of JPH0265238A publication Critical patent/JPH0265238A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To inhibit the switching noise of a digital signal from spreading to an analog circuit sensitive to noise by a method wherein two shielding signals parallel to a certain signal are arranged on both sides of the signal at specified distances from the certain signal wiring and moreover, another signal to be shielded is arranged on the outside of one shielding signal of the two shielding signals at a specified distance from the shielding signal and a constant potential is applied to the two shielding signals. CONSTITUTION:Shielding signals 2 and 3 are arranged on both sides of a digital signal 1 at the intervals L1 between wirings and a signal 4 to be shielded to need to avoid the switching noise of the signal 1 is arranged at the interval L2 between wirings from the signal 2. An stable constant potential (a shielding potential) is applied to the signals 2 and 3 and the L1 is L1<=L2 to the L2. Thereby, as an electric line of force, which is generated from the signal 1, is bent and the bonding force of the signal 1 with the signal 4 is reduced, the noise resistance of a device is improved.

Description

【発明の詳細な説明】 〔産業上の利用分野1 本発明はアナログ・デジタル混在型半導体集積装置のレ
イアウト方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to a layout method for an analog/digital mixed type semiconductor integrated device.

〔従来の技術〕[Conventional technology]

従来、ノイズに敏感なアナログ回路が半導体集積回路上
に有る時、デジタル信号(特に高い周波数)をアナログ
回路のブロックから遠ざけて配置するという手法がとら
れていた。
Conventionally, when analog circuits sensitive to noise are present on a semiconductor integrated circuit, a method has been adopted in which digital signals (particularly high frequencies) are placed away from blocks of analog circuits.

[発明が解決しようとする課題] しかし年々回路の集積度が上るにつれ1つの機能を持っ
た回路ブロックはまとめて配置する方が面積効率が良(
なり、特にアナログ回路の信号を不用に長(することは
特性上好ましくない。又、抵抗素子や容量素子など比較
的大きな面積を占める素子が多数ある場合、高速デジタ
ル信号との距離を遠ざけるという手法は限度がある。
[Problem to be solved by the invention] However, as the degree of integration of circuits increases year by year, it has become more efficient to place circuit blocks with one function together (
In particular, it is undesirable to make analog circuit signals unnecessarily long.Also, when there are many elements occupying a relatively large area, such as resistive elements and capacitive elements, it is a method to increase the distance from high-speed digital signals. has a limit.

そこで本発明は、高速デジタル信号のスイッチングノイ
ズからアナログ回路等ノイズに敏感な回路への影響を抑
えることを目的としている。
Therefore, an object of the present invention is to suppress the influence of switching noise of high-speed digital signals on circuits sensitive to noise such as analog circuits.

[課題を解決するための手段] 上記問題点を解決する為、本発明の半導体集積装置は、
同一配線層においである信号配線から距離LIだけ離し
て両側に平行した2本の信号(シールド信号)を配置し
、さらにいずれかのシールド信号の外側に前記シールド
信号から距離L2だけ離して別の信号配線(被シールド
信号)を配置し、前記2本のシールド信号には一定の電
位(シールド電位)を与え、又前記L1、L2はL1≦
L2 という関係を有することを特徴とする。
[Means for Solving the Problems] In order to solve the above problems, the semiconductor integrated device of the present invention has the following features:
In the same wiring layer, two parallel signals (shield signals) are placed on both sides at a distance LI from a certain signal wiring, and another signal is placed outside one of the shield signals at a distance L2 from the shield signal. A signal wiring (shielded signal) is arranged, a constant potential (shield potential) is applied to the two shield signals, and L1 and L2 are set such that L1≦
It is characterized by having the relationship L2.

[実 施 例] 以下に本発明の実施例を図面にもとづいて説明する。[Example] Embodiments of the present invention will be described below based on the drawings.

第1図は本発明の構成の特徴を示す図である。FIG. 1 is a diagram showing the features of the configuration of the present invention.

デジタル信号1の両側に配線間隔L1てシールド信号2
.3が配置されている。そしてシールド信号2から配線
間隔L2て、信号1のスイッチングノイズを避ける必要
がある信号4が配置されている。ここでシールド信号2
.3に安定した一定の電位(シールド電位)を与えてお
くことにより、信号1から発生される電気力線が曲げら
れ、信号4との結合力が低下する為、ノイズ耐性が向上
する。
Shield signal 2 with wiring spacing L1 on both sides of digital signal 1
.. 3 is placed. A signal 4, which needs to avoid the switching noise of the signal 1, is placed at a wiring interval L2 from the shield signal 2. Here shield signal 2
.. By applying a stable constant potential (shield potential) to signal 3, the lines of electric force generated from signal 1 are bent, and the coupling force with signal 4 is reduced, thereby improving noise resistance.

シールド電源5としては簡単な構成にする為には電源電
圧(VDD)や接地電圧(VSS)が選ばれるが変動の
少ない安定した電圧であればその第2図はD/A変換回
路、A/D変換回路等のアナログ回路では良く使用され
るサンプルホールド回路である。回路動作を以下に説明
する。21は入力電圧VINでサンプリングパルス23
が来る度にトランスミッションゲー1−22を通過し、
コンデンサ24とオペアンプ26により信号25へ入力
電圧2]が貯えられる。この信号25はオペアンプ26
のボルテージフォロワ入力となり出力電圧27へ出力さ
れ、次のサンプリングパルス23が来るまで出力電圧2
7はホールドされる。
For the shield power supply 5, a power supply voltage (VDD) or ground voltage (VSS) is selected to have a simple configuration, but if the voltage is stable with little fluctuation, the D/A conversion circuit, A/ This is a sample and hold circuit that is often used in analog circuits such as D conversion circuits. The circuit operation will be explained below. 21 is the input voltage VIN and the sampling pulse 23
Pass the transmission game 1-22 every time it comes,
The input voltage 2] is stored in the signal 25 by the capacitor 24 and the operational amplifier 26. This signal 25 is the operational amplifier 26
becomes a voltage follower input and is output to the output voltage 27, and the output voltage 2 remains until the next sampling pulse 23 arrives.
7 is held.

このサンプルホールド回路のすぐそばに高速なデジタル
信号29が配置されると、正確な入力電圧がボールドさ
れなくなるおそれがある。
If a high-speed digital signal 29 is placed in close proximity to this sample-and-hold circuit, there is a risk that the accurate input voltage will not be bolded.

第3図はデジタル信号29を単純に配置した時のサンプ
ルホールド回路のタイミング図である。
FIG. 3 is a timing diagram of the sample and hold circuit when the digital signal 29 is simply arranged.

サンプリングパルス23と異なるタイミングでデジタル
信号29が動作す葛湯合、そのスイッチングノイズの影
響で信号25にノイズがのる。このノイズはごく短かい
時間で消えるが、信号25のホールド電圧はたまたま正
しいホールド電圧からずれた値をホールドしてしまう可
能性がある。すると出力電圧27の値も正しい値からず
れてしまう。
When the digital signal 29 operates at a timing different from the sampling pulse 23, noise is added to the signal 25 due to the switching noise. Although this noise disappears in a very short time, there is a possibility that the hold voltage of the signal 25 happens to hold a value that deviates from the correct hold voltage. Then, the value of the output voltage 27 also deviates from the correct value.

そこで本発明の様にデジタル信号29の両側に平行して
2本の信号線(シールド信号)を配置しこの2本の信号
にはシールド電圧として■SS電位を与えておく。この
時の電位はVDDでもVSSでも又その中間電位でも良
いが、変動の少ない電源電圧が良い。さらにこのシール
ド電圧は電源電圧変動の影響を受けにくい圧電圧回路の
出力電圧を用いるとシールドの効果は上がる。
Therefore, as in the present invention, two signal lines (shield signals) are arranged in parallel on both sides of the digital signal 29, and the SS potential is applied to these two signals as a shield voltage. The potential at this time may be VDD, VSS, or an intermediate potential, but a power supply voltage with little fluctuation is preferable. Furthermore, the shielding effect will be enhanced if the shield voltage is an output voltage of a piezoelectric circuit that is less susceptible to fluctuations in the power supply voltage.

そしてデジタル信号29と隣接する2本のシルト信号は
デザインルール上杵される最小間隔L1で配置される。
The digital signal 29 and two adjacent silt signals are arranged at a minimum interval L1 according to design rules.

さらにシールド信号の配線巾が広い程シールド効果は高
い。
Furthermore, the wider the wiring width of the shield signal, the higher the shielding effect.

又配線材料はアルミでもポリシリコンでも拡散でも同様
の効果がある。
Also, the same effect can be obtained whether the wiring material is aluminum, polysilicon, or diffusion.

第4図は本発明による上記構成にした場合のサンプルホ
ールド回路のタイミング図である。デジタル信号29の
スイッチングの際、信号25はスイッチングノイズの影
響を受けにく(なっている。よって正しい値が出力電圧
27へ出て来る。
FIG. 4 is a timing diagram of the sample and hold circuit in the case of the above configuration according to the present invention. During switching of the digital signal 29, the signal 25 is less susceptible to switching noise. Therefore, a correct value appears at the output voltage 27.

本実施例ではデジタル系からアナログ系への影響を少な
くすることを述べたが、本発明の構成を用ってすればア
ナログ系どうしのスイッチングノイズ対策、デジタル系
どうしのスイッチングノイズ対策にも適用できることは
明らかである。
Although this embodiment has described reducing the influence from the digital system to the analog system, the configuration of the present invention can also be applied to countermeasures against switching noise between analog systems and switching noise between digital systems. is clear.

又低電圧系と高電圧系の信号が混在する多電源回路の場
合にも有効である。
It is also effective in the case of a multi-power supply circuit in which low-voltage and high-voltage signals coexist.

又本構成は3層以上の配線技術にも容易に適用できる。Further, this configuration can be easily applied to wiring technology with three or more layers.

尚、本発明におけるデジタル信号配線、シールド信号配
線、被シールド信号配線の位置関係は、デジタル信号配
線とシールド信号配線の距離Lが少なくともデジタル信
号配線と被シールド信号配線の距離よりも長く配置され
れば、本発明の効果は達成できる。
The positional relationship between the digital signal wiring, the shielded signal wiring, and the shielded signal wiring in the present invention is such that the distance L between the digital signal wiring and the shielded signal wiring is at least longer than the distance between the digital signal wiring and the shielded signal wiring. For example, the effects of the present invention can be achieved.

[発明の効果] 本発明によれば同し半導体集積回路中から発生するデジ
タル信号のスイッチングノイズが、ノイズに敏感なアナ
ログ回路へ及ぶのを、極めて簡単な付加パターンにより
抑えることができる。
[Effects of the Invention] According to the present invention, it is possible to suppress the switching noise of digital signals generated in the same semiconductor integrated circuit from reaching analog circuits that are sensitive to noise by using an extremely simple additional pattern.

よって本発明は、チップ面積を増大させることなく精度
の高いアナログデジタル混在型半導体集積装置を実現す
る一手段となる。
Therefore, the present invention provides a means for realizing a highly accurate analog-digital mixed semiconductor integrated device without increasing the chip area.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による信号配置図、第2図はサンプルホ
ールド回路図、第3図は従来技術によるサンプルホール
ドタイミング図、第4図は本発明の構成によるサンプル
ホールドタイミング図である。 以上 第
FIG. 1 is a signal arrangement diagram according to the present invention, FIG. 2 is a sample-and-hold circuit diagram, FIG. 3 is a sample-and-hold timing diagram according to the prior art, and FIG. 4 is a sample-and-hold timing diagram according to the configuration of the present invention. That's all

Claims (1)

【特許請求の範囲】[Claims] 同一配線層において、ある信号配線から距離L_1だけ
離して両側に平行した2本の信号(以下シールド信号と
呼ぶ)を配置し、さらにいずれかのシールド信号の外側
に前記シールド信号から距離L_2だけ離して別の信号
配線(以下被シールド信号)を配置し、前記2本のシー
ルド信号には一定の電位(以下シールド電位と呼ぶ)を
与え、又前記L_1、L_2は、L_1≦L_2という
関係を有することを特徴とする半導体集積装置。
In the same wiring layer, two parallel signals (hereinafter referred to as shield signals) are arranged on both sides at a distance L_1 from a certain signal wiring, and further, a distance L_2 from the shield signal is placed outside one of the shield signals. Another signal wiring (hereinafter referred to as a shielded signal) is arranged, and a constant potential (hereinafter referred to as a shield potential) is applied to the two shield signals, and the L_1 and L_2 have a relationship of L_1≦L_2. A semiconductor integrated device characterized by:
JP21752388A 1988-08-31 1988-08-31 Semiconductor integrated device Pending JPH0265238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21752388A JPH0265238A (en) 1988-08-31 1988-08-31 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21752388A JPH0265238A (en) 1988-08-31 1988-08-31 Semiconductor integrated device

Publications (1)

Publication Number Publication Date
JPH0265238A true JPH0265238A (en) 1990-03-05

Family

ID=16705575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21752388A Pending JPH0265238A (en) 1988-08-31 1988-08-31 Semiconductor integrated device

Country Status (1)

Country Link
JP (1) JPH0265238A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2690026A1 (en) * 1991-11-28 1993-10-15 Samsung Electronics Co Ltd Memory device for suppressing the noise produced between signal lines.
EP0598563A2 (en) * 1992-11-18 1994-05-25 Fuji Electric Co. Ltd. Semiconductor conversion device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2690026A1 (en) * 1991-11-28 1993-10-15 Samsung Electronics Co Ltd Memory device for suppressing the noise produced between signal lines.
EP0598563A2 (en) * 1992-11-18 1994-05-25 Fuji Electric Co. Ltd. Semiconductor conversion device
EP0598563A3 (en) * 1992-11-18 1995-05-17 Fuji Electric Co Ltd Semiconductor conversion device.
EP0713251A2 (en) * 1992-11-18 1996-05-22 Fuji Electric Co. Ltd. Semiconductor conversion device
EP0713251A3 (en) * 1992-11-18 1996-08-14 Fuji Electric Co Ltd Semiconductor conversion device
US5576575A (en) * 1992-11-18 1996-11-19 Fuji Electric Co., Ltd. Semiconductor conversion device

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