JPH0263557U - - Google Patents
Info
- Publication number
- JPH0263557U JPH0263557U JP14194388U JP14194388U JPH0263557U JP H0263557 U JPH0263557 U JP H0263557U JP 14194388 U JP14194388 U JP 14194388U JP 14194388 U JP14194388 U JP 14194388U JP H0263557 U JPH0263557 U JP H0263557U
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion element
- resin material
- image sensor
- contact image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Description
第１図は本考案の実施例を示した断面簡略図、
第２図は第１図の斜視簡略図である。
３……センサ基板（高抵抗基体）、４……個別
電極、５……半導体薄膜、６……透明導電膜、８
……Ａｌパターン（樹脂材との接着性にすぐれた
材料）、９……シリコーン樹脂（樹脂材）、１１
……光電変換素子。
FIG. 1 is a simplified cross-sectional view showing an embodiment of the present invention;
FIG. 2 is a simplified perspective view of FIG. 1. 3...Sensor substrate (high resistance base), 4...Individual electrode, 5...Semiconductor thin film, 6...Transparent conductive film, 8
...Al pattern (material with excellent adhesion to resin material), 9...Silicone resin (resin material), 11
...Photoelectric conversion element.
Claims (1)
換素子と、 この光電変換素子を封止する樹脂材とを少なく
とも備えた密着イメージセンサにおいて、 前記光電変換素子の略外周には、前記樹脂材と
の接着性にすぐれた材料が配置されていることを
特徴とする密着イメージセンサ。[Claims for Utility Model Registration] A contact image sensor comprising at least a high-resistance base, a photoelectric conversion element disposed on one main surface of the high-resistance base, and a resin material for sealing the photoelectric conversion element. . A close contact image sensor, wherein a material having excellent adhesiveness to the resin material is disposed approximately on the outer periphery of the photoelectric conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14194388U JPH0263557U (en) | 1988-11-01 | 1988-11-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14194388U JPH0263557U (en) | 1988-11-01 | 1988-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0263557U true JPH0263557U (en) | 1990-05-11 |
Family
ID=31407461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14194388U Pending JPH0263557U (en) | 1988-11-01 | 1988-11-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0263557U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11973949B2 (en) | 2010-10-01 | 2024-04-30 | Dolby International Ab | Nested entropy encoding |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967663A (en) * | 1982-10-12 | 1984-04-17 | Hitachi Ltd | Semiconductor device |
| JPS6062278A (en) * | 1983-09-14 | 1985-04-10 | Toshiba Corp | Image sensor |
-
1988
- 1988-11-01 JP JP14194388U patent/JPH0263557U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967663A (en) * | 1982-10-12 | 1984-04-17 | Hitachi Ltd | Semiconductor device |
| JPS6062278A (en) * | 1983-09-14 | 1985-04-10 | Toshiba Corp | Image sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11973949B2 (en) | 2010-10-01 | 2024-04-30 | Dolby International Ab | Nested entropy encoding |