JPH0263306B2 - - Google Patents
Info
- Publication number
- JPH0263306B2 JPH0263306B2 JP577884A JP577884A JPH0263306B2 JP H0263306 B2 JPH0263306 B2 JP H0263306B2 JP 577884 A JP577884 A JP 577884A JP 577884 A JP577884 A JP 577884A JP H0263306 B2 JPH0263306 B2 JP H0263306B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- dielectric film
- processed
- workpiece
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は被処理物の離脱装置に係り、特に静電
チヤツクにより固定された被処理物の離脱装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a device for removing a workpiece, and more particularly to a device for removing a workpiece fixed by an electrostatic chuck.
近年、半導体の製造工程におけるドライ化およ
び自動化が進むにつれて、被処理物の電極への固
定手段が、被処理物の汚染を防ぐため機械的手段
に代わり静電的に固定する手段が用いられつつあ
る。
In recent years, as the semiconductor manufacturing process has become increasingly dry and automated, electrostatic fixing means have been used instead of mechanical means to fix the workpiece to the electrode in order to prevent contamination of the workpiece. be.
第１図は従来の静電チヤツクを用いたRIE（反
応性イオンエツチング）装置を示したもので、真
空容器１の上部には、電極２がテフロン絶縁板３
を介して取付けられており、上記電極２の下面に
は、カプトン（ポリイミド）等の誘電体膜４が貼
着されている。さらに、上記電極２の内部には、
水冷パイプを兼ねた導管５が挿通されており、こ
の導管５には高周波電源６がマツチング回路７を
介して接続されるとともに、直流電源８が高周波
をカツトするチヨークコイル９を介して接続され
ている。また、上記電極２の中心部には、上記誘
電体膜４の上面に達する孔部１０が穿設されてお
り、この孔部１０には、ガス供給管１１およびガ
ス排気管１２がそれぞれ電磁弁１３ａ，１３ｂを
介して接続されている。 Figure 1 shows a conventional RIE (reactive ion etching) device using an electrostatic chuck.
A dielectric film 4 made of Kapton (polyimide) or the like is adhered to the lower surface of the electrode 2. Furthermore, inside the electrode 2,
A conduit 5 that also serves as a water cooling pipe is inserted through the conduit 5, and a high frequency power source 6 is connected to this conduit 5 via a matching circuit 7, and a DC power source 8 is connected via a choke coil 9 that cuts high frequencies. . Further, a hole 10 reaching the upper surface of the dielectric film 4 is bored in the center of the electrode 2, and a gas supply pipe 11 and a gas exhaust pipe 12 are connected to the electromagnetic valves in the hole 10, respectively. They are connected via 13a and 13b.
上記真空容器１の下面には、ガス導入口１４お
よび排気口１５が設けられるとともに、上記真空
容器１の下方に配設されたエアシリンダ１６のシ
ヤフト１７が、真空容器１の下面中央に貫通され
ており、このシヤフト１７の上端部には支持台１
８が設けられている。 A gas inlet 14 and an exhaust port 15 are provided on the lower surface of the vacuum container 1, and a shaft 17 of an air cylinder 16 disposed below the vacuum container 1 penetrates through the center of the lower surface of the vacuum container 1. At the upper end of this shaft 17 is a support stand 1.
8 is provided.
上記装置の場合、真空容器１の内部空気を排気
口１５から真空ポンプ等により排気して真空に
し、かつ、ガス導入口１４からAr等のガスを送
り、真空容器１の内部をガス雰囲気にする。そし
て、支持台１８上の被処理物Ａをエアシリンダ１
６により上昇させて、誘電体膜４の下面に静電チ
ヤツクにより固定する。この静電チヤツクは直流
電源８をONにすることにより作動する。この状
態において、高周波電源６をONにすることによ
り、被処理物Ａの下面側のエツチングが行なわ
れ、導管５の内部を流れる冷却水により電極２お
よび被処理物Ａの冷却が行なわれる。エツチング
終了後高周波電源６をOFFにし、かつ、直流電
源８をOFFにした後、接地電位状態の支持台１
８をエアシリンダ１６により上昇させて被処理物
Ａに接触させ、被処理物Ａに蓄積された電荷を支
持台１８を通して逃がす。その後、電磁弁１３ａ
を開いてガス供給管１１から孔部１０にN2等の
ガス（0.3〜0.5Kg／cm2）を送り、誘電体膜４をわ
ずかに膨出させることにより、被処理物Ａを離脱
させる。この被処理物Ａは支持台１８上に載置さ
れ、エアシリンダ１６により下降させられ、同時
に、上記電磁弁１３ａを閉じ他方の電磁弁１３ｂ
を開いてガス排気管１２から排気を行ない、上記
膨出した誘電体膜４を元の状態に戻すようになさ
れる。 In the case of the above device, the air inside the vacuum container 1 is evacuated from the exhaust port 15 by a vacuum pump or the like to create a vacuum, and a gas such as Ar is sent from the gas inlet 14 to create a gas atmosphere inside the vacuum container 1. . Then, the workpiece A on the support stand 18 is moved to the air cylinder 1.
6 and fixed to the lower surface of the dielectric film 4 with an electrostatic chuck. This electrostatic chuck is activated by turning on the DC power supply 8. In this state, by turning on the high frequency power supply 6, etching is performed on the lower surface of the object A, and the electrode 2 and the object A are cooled by the cooling water flowing inside the conduit 5. After etching is completed, the high frequency power supply 6 is turned off, and the DC power supply 8 is turned off, and the support base 1 is placed at ground potential.
8 is raised by an air cylinder 16 and brought into contact with the workpiece A, and the charge accumulated on the workpiece A is released through the support table 18. After that, the solenoid valve 13a
After opening, a gas such as N 2 (0.3 to 0.5 Kg/cm 2 ) is sent from the gas supply pipe 11 to the hole 10 to cause the dielectric film 4 to swell slightly, thereby allowing the object A to be removed. This workpiece A is placed on a support stand 18 and lowered by an air cylinder 16, and at the same time, the electromagnetic valve 13a is closed and the other electromagnetic valve 13b is
The gas exhaust pipe 12 is opened to exhaust gas, and the bulged dielectric film 4 is returned to its original state.
上記装置においては、エツチング時間が長くな
つたり、自動運転により連続的に多数枚の被処理
物をエツチングした場合に、誘電体膜４の表面に
電荷が蓄積してしまい、上記誘電体膜４の膨出に
よつては被処理物Ａを離脱させることができなく
なるという欠点を有している。
In the above apparatus, when the etching time becomes long or when a large number of objects to be processed are continuously etched by automatic operation, charges accumulate on the surface of the dielectric film 4. This has the disadvantage that the object to be treated A cannot be removed due to the bulge.
そのため、N2等のガス圧を高くして（0.9Kg／
cm2以上）誘電体膜４の膨出を行なう手段が考えら
れるが、このような手段では、電極２と誘電体膜
４との貼着がはがれ、必要以上に誘電体膜４が膨
出してしまい、被処理物Ａが支持台１８にたたき
つけられて損傷を受けるという問題がある。 Therefore, the pressure of gas such as N2 is increased (0.9Kg/
cm 2 or more), but such a method may cause the electrode 2 and the dielectric film 4 to peel off, causing the dielectric film 4 to bulge out more than necessary. Therefore, there is a problem in that the object to be processed A is knocked against the support table 18 and damaged.
本発明は上記した点に鑑みてなされたもので、
静電チヤツクにより固定された被処理物を確実に
離脱させることができる被処理物の離脱装置を提
供することを目的とするものである。
The present invention has been made in view of the above points, and
It is an object of the present invention to provide a device for removing a workpiece that can reliably release a workpiece fixed by an electrostatic chuck.
上記目的達成のため本発明の被処理物の離脱装
置は、被処理物を静電的に固定する静電チヤツク
の電極と、この電極の上記被処理物固定側面に貼
着された誘電体膜とを貫通する孔部を上記被処理
物の固定位置に設け、上記孔部にガス供給管およ
びガス排気管を接続してなり、上記静電チヤツク
に固定された被処理物の裏面に、上記ガス供給管
から送られるガスを上記孔部から吹き付けること
により上記誘電体膜に蓄積する電荷を放電させて
被処理物を離脱させるようにして構成されてお
り、誘電体膜を膨出させることなく被処理物を離
脱させるようになされている。
In order to achieve the above-mentioned object, the device for removing the processed material of the present invention comprises an electrode of an electrostatic chuck that electrostatically fixes the processed material, and a dielectric film attached to the side surface of the electrode for fixing the processed material. A hole penetrating through the electrostatic chuck is provided at a fixed position of the workpiece, and a gas supply pipe and a gas exhaust pipe are connected to the hole. By blowing gas sent from the gas supply pipe through the hole, the charges accumulated in the dielectric film are discharged and the object to be processed is separated, without causing the dielectric film to bulge. It is designed to separate the object to be processed.
以下、本発明の実施例を第２図を参照して説明
し、第１図と同一部分には同一符号を付してその
説明を省略する。
Hereinafter, an embodiment of the present invention will be described with reference to FIG. 2, and the same parts as in FIG. 1 are given the same reference numerals, and the explanation thereof will be omitted.
本実施例においては、ガス供給管１１およびガ
ス排気管１２が接続された孔部１０は、誘電体膜
４を貫通して真空容器１の内部に開口するように
なされ、さらに、上記孔部１０への接続配管の中
途部には、ガスの流速を制御するリザーバタンク
１９が設けられている。 In this embodiment, the hole 10 to which the gas supply pipe 11 and the gas exhaust pipe 12 are connected penetrates the dielectric film 4 and opens into the inside of the vacuum vessel 1. A reservoir tank 19 for controlling the gas flow rate is provided in the middle of the connecting pipe.
本実施例の場合、直流電源８をONにすること
により被処理物Ａを誘電体膜４の下面に吸着さ
せ、このとき、上記孔部１０は被処理物Ａにより
塞がれるとともに、電磁弁１３ｂを開いてガス排
気管１２から真空排気し、被処理物Ａの裏面にお
ける放電を防ぐようになされている。 In the case of this embodiment, by turning on the DC power supply 8, the object to be processed A is attracted to the lower surface of the dielectric film 4, and at this time, the hole 10 is blocked by the object to be processed A, and the solenoid valve 13b is opened to evacuate the gas from the gas exhaust pipe 12 to prevent discharge on the back surface of the object A.
そして、被処理物Ａのエツチングが終了した
後、各電源６，８をOFFにしかつエアシリンダ
１６の作動により支持台１８を上昇させ、支持台
１８が上昇した後、電磁弁１３ｂを閉じ他方の電
磁弁１３ａを一定時間開いて、N2等のガスをガ
ス供給管１１から被処理物Ａの裏面に直接吹き付
けるようになされる。これにより、被処理物Ａの
裏面部分の誘電体膜４に蓄積された電荷がガス中
に放電するので、被処理物Ａは誘電体膜４から容
易に離脱して支持台１８上に載置される。 After the etching of the object A is completed, the power supplies 6 and 8 are turned off, and the support table 18 is raised by operating the air cylinder 16. After the support table 18 has been raised, the solenoid valve 13b is closed and the other The electromagnetic valve 13a is opened for a certain period of time, and a gas such as N 2 is directly blown onto the back surface of the object A from the gas supply pipe 11. As a result, the charges accumulated in the dielectric film 4 on the back surface of the object A are discharged into the gas, so that the object A is easily separated from the dielectric film 4 and placed on the support table 18. be done.
なお、本実施例においては被処理物の離脱装置
をRIE装置に適用した場合についてのみ説明した
が、スパツタリング装置、プラズマCVD装置、
イオン注入装置、電子ビーム描画装置等真空容器
内で静電チヤツクを用いる装置であれば、いずれ
の装置にも適用できる。 In addition, in this example, only the case where the device for removing the processed material is applied to the RIE device was explained, but it can also be applied to a sputtering device, a plasma CVD device, a plasma CVD device, etc.
The present invention can be applied to any device that uses an electrostatic chuck in a vacuum container, such as an ion implanter or an electron beam lithography device.
以上述べたように本発明に係る被処理物の離脱
装置は、静電チヤツクの電極と、この電極に貼着
された誘電体膜を貫通する孔部にガス供給管およ
びガス排気管を接続してなり、上記静電チヤツク
に上記孔部を塞ぐように固定された被処理物の固
定面に、上記ガス供給管により孔部からガスを吹
き付けて上記誘電体膜に蓄積される電荷をガス中
に放電させるように構成したので、誘電体膜に電
荷が蓄積した場合でも、容易にかつ確実に被処理
物を離脱させることができる。また、誘電体膜を
膨出させないので被処理物が損傷を受けることが
なく、さらに、有機誘電体膜のみならず種々の誘
電体膜を使用することができ、被処理物の冷却効
果の向上および誘電体膜の寿命の向上を図ること
ができる等の効果を奏する。
As described above, the device for separating the object to be processed according to the present invention connects the gas supply pipe and the gas exhaust pipe to the electrode of the electrostatic chuck and the hole penetrating the dielectric film attached to the electrode. Then, gas is blown from the hole through the gas supply pipe onto the fixed surface of the workpiece fixed to the electrostatic chuck so as to cover the hole, and the charge accumulated in the dielectric film is removed from the gas. Since the dielectric film is configured to cause discharge, even if charges are accumulated in the dielectric film, the object to be processed can be easily and reliably removed. In addition, since the dielectric film does not bulge out, the object to be processed will not be damaged.Furthermore, various dielectric films can be used in addition to organic dielectric films, improving the cooling effect of the object to be processed. Also, it is possible to improve the life of the dielectric film.
第１図は従来の離脱装置をRIE装置に適用した
例を示す正面断面図、第２図は本発明の一実施例
を示す正面断面図である。
１……真空容器、２……電極、３……絶縁板、
４……誘電体膜、５……導管、６……高周波電
源、７……マツチング回路、８……直流電源、９
……チヨークコイル、１０……孔部、１１……ガ
ス供給管、１２……ガス排気管、１３……電磁
弁、１４……ガス導入管、１５……排気管、１６
……エアシリンダ、１７……シヤフト、１８……
支持台、１９……リザーバタンク。
FIG. 1 is a front sectional view showing an example in which a conventional detachment device is applied to an RIE device, and FIG. 2 is a front sectional view showing an embodiment of the present invention. 1... Vacuum container, 2... Electrode, 3... Insulating plate,
4... Dielectric film, 5... Conduit, 6... High frequency power supply, 7... Matching circuit, 8... DC power supply, 9
...Chiyoke coil, 10...Hole, 11...Gas supply pipe, 12...Gas exhaust pipe, 13...Solenoid valve, 14...Gas introduction pipe, 15...Exhaust pipe, 16
...Air cylinder, 17...Shaft, 18...
Support stand, 19...reservoir tank.
Claims (1)
電極と、この電極の上記被処理物固定側面に貼着
された誘電体膜とを貫通する孔部を上記被処理物
の固定位置に設け、上記孔部にガス供給管および
ガス排気管を接続してなり、上記静電チヤツクに
固定された被処理物の固定面に、上記ガス供給管
から送られるガスを上記孔部から吹き付けること
により上記誘電体膜に蓄積する電荷を放電させて
被処理物を離脱させるようにしたことを特徴とす
る被処理物の離脱装置。1. A hole penetrating the electrode of the electrostatic chuck that electrostatically fixes the object to be processed and the dielectric film attached to the side surface of the electrode for fixing the object to be processed is placed at the position where the object to be processed is fixed. and a gas supply pipe and a gas exhaust pipe are connected to the hole, and the gas sent from the gas supply pipe is sprayed from the hole onto the fixed surface of the workpiece fixed to the electrostatic chuck. A device for removing a workpiece, characterized in that the workpiece is removed by discharging the charge accumulated in the dielectric film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP577884A JPS60150632A (en) | 1984-01-18 | 1984-01-18 | Removing device of item to be processed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP577884A JPS60150632A (en) | 1984-01-18 | 1984-01-18 | Removing device of item to be processed |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60150632A JPS60150632A (en) | 1985-08-08 |
| JPH0263306B2 true JPH0263306B2 (en) | 1990-12-27 |
Family
ID=11620562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP577884A Granted JPS60150632A (en) | 1984-01-18 | 1984-01-18 | Removing device of item to be processed |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60150632A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5997962A (en) * | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
| KR100267418B1 (en) | 1995-12-28 | 2000-10-16 | 엔도 마코토 | Plasma treatment and plasma treating device |
| JP4786693B2 (en) | 2008-09-30 | 2011-10-05 | 三菱重工業株式会社 | Wafer bonding apparatus and wafer bonding method |
-
1984
- 1984-01-18 JP JP577884A patent/JPS60150632A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60150632A (en) | 1985-08-08 |
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