JPH0263305B2 - - Google Patents
Info
- Publication number
- JPH0263305B2 JPH0263305B2 JP18743683A JP18743683A JPH0263305B2 JP H0263305 B2 JPH0263305 B2 JP H0263305B2 JP 18743683 A JP18743683 A JP 18743683A JP 18743683 A JP18743683 A JP 18743683A JP H0263305 B2 JPH0263305 B2 JP H0263305B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- dielectric film
- discharge hole
- gas
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は被処理物の離脱装置に係り、特に静電
チヤツクにより固定された被処理物の離脱装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a device for removing a workpiece, and more particularly to a device for removing a workpiece fixed by an electrostatic chuck.
近年、半導体の製造工程におけるドライ化およ
び自動化が進むにつれて、被処理物の電極への固
定手段が、被処理物の汚染を防ぐため機械的手段
に代わり、静電的に固定する手段が広く用いられ
るようになつてきた。
In recent years, as semiconductor manufacturing processes have become increasingly dry and automated, electrostatic fixing methods have become widely used instead of mechanical methods to prevent contamination of the processed materials. I'm starting to be able to do it.
第１図は従来の静電チヤツクを用いたRIE（反
応性イオンエツチング）装置を示したもので、真
空容器１の上部には、電極２がテフロン絶縁板３
を介して取付けられており、上記電極２の下面に
は、カプトン（ポリイミド）等の誘電体膜４が貼
着されている。さらに、上記電極２の内部には、
水冷パイプ兼用の導管５が挿通されており、この
導管５には、高周波電源６がマツチング回路７を
介して接続されるとともに、直流電源８が高周波
をカツトするチヨークコイル９を介して接続され
ている。また、上記電極２の中心部には、上記誘
電体膜４の上面に達する孔部１０が穿設されてお
り、この孔部１０には、N2ガス供給管１１およ
びN2ガス排気管１２がそれぞれ電磁弁１３ａ，
１３ｂを介して接続されている。 Figure 1 shows a conventional RIE (reactive ion etching) device using an electrostatic chuck.
A dielectric film 4 made of Kapton (polyimide) or the like is adhered to the lower surface of the electrode 2. Furthermore, inside the electrode 2,
A conduit 5 that also serves as a water cooling pipe is inserted through the conduit 5, and a high frequency power source 6 is connected to the conduit 5 via a matching circuit 7, and a DC power source 8 is connected via a choke coil 9 that cuts high frequencies. . Further, a hole 10 reaching the upper surface of the dielectric film 4 is bored in the center of the electrode 2, and this hole 10 includes an N 2 gas supply pipe 11 and an N 2 gas exhaust pipe 12. are the solenoid valves 13a,
13b.
上記真空容器１の下面には、ガス導入口１４お
よび排気口１５が設けられるとともに、上記真空
容器１の下方に配設されたエアシリンダ１６のシ
ヤフト１７が、真空容器１の下面中央に貫通され
ており、このシヤフト１７の上端部には、支持台
１８が設けられている。 A gas inlet 14 and an exhaust port 15 are provided on the lower surface of the vacuum container 1, and a shaft 17 of an air cylinder 16 disposed below the vacuum container 1 penetrates through the center of the lower surface of the vacuum container 1. A support stand 18 is provided at the upper end of the shaft 17.
上記装置の場合、真空容器１の内部空気を排気
口１５から排気して真空にするとともに、ガス導
入口１４からAr等のガスを送り、ガス雰囲気と
する。そして、支持台１８上の被処理物Ａをエア
シリンダ１６により上昇させて、誘電体膜４の下
面に静電チヤツクにより固定する。この静電チヤ
ツクは直流電源８をONすることにより作動す
る。この状態において、高周波電源６をONにす
ることにより、被処理物Ａの下面側のエツチング
が行なわれ、導管５の内部を流れる冷却水により
電極２および被処理物Ａの冷却が行なわれる。エ
ツチング終了後高周波電源６をOFFにし、かつ
直流電源８をOFFにするとともに接地電位状態
の支持台１８をエアシリンダ１６により上昇させ
て被処理物Ａに接触させ、被処理物Ａに蓄積され
た電荷を支持台１８を通して逃がす。その後、電
磁弁１３ａを開いてN2ガス供給管１１から孔部
１０にN2ガス（0.3〜0.5Kg／cm2）を送り、誘電体
膜４をわずかに膨出させることにより、被処理物
Ａを離脱させる。この被処理物Ａは支持台１８上
に載置され、エアシリンダ１６により下降するも
のであり、同時に上記電磁弁１３ａを閉じ、他方
の電磁弁１３ｂを開いて、N2ガス排気管１２か
ら排気を行ない上記膨出した誘電体膜４を元の状
態に戻すようになされる。 In the case of the above device, the internal air of the vacuum container 1 is evacuated through the exhaust port 15 to create a vacuum, and a gas such as Ar is sent through the gas inlet 14 to create a gas atmosphere. The workpiece A on the support table 18 is then raised by the air cylinder 16 and fixed to the lower surface of the dielectric film 4 by an electrostatic chuck. This electrostatic chuck is activated by turning on the DC power supply 8. In this state, by turning on the high frequency power supply 6, etching is performed on the lower surface of the object A, and the electrode 2 and the object A are cooled by the cooling water flowing inside the conduit 5. After etching is completed, the high-frequency power supply 6 is turned off, the DC power supply 8 is turned off, and the support base 18, which is at ground potential, is raised by the air cylinder 16 and brought into contact with the workpiece A, so that the material accumulated on the workpiece A is removed. The charge is dissipated through the support platform 18. Thereafter, by opening the solenoid valve 13a and sending N 2 gas (0.3 to 0.5 Kg/cm 2 ) from the N 2 gas supply pipe 11 to the hole 10, the dielectric film 4 is slightly bulged. Let A leave. The workpiece A is placed on a support stand 18 and lowered by an air cylinder 16. At the same time, the electromagnetic valve 13a is closed, the other electromagnetic valve 13b is opened, and N 2 gas is exhausted from the exhaust pipe 12. This is done to return the bulged dielectric film 4 to its original state.
上記装置においては、エツチング時間が長くな
つたり、自動運転で連続的に多数枚の被処理物を
エツチングした場合に、誘電体膜４の表面に電荷
が蓄積してしまい、上記誘電体膜４の膨出によつ
ては、被処理物Ａを離脱させることができなくな
るという欠点を有している。
In the above-mentioned apparatus, when the etching time becomes long or when a large number of objects to be processed are continuously etched in automatic operation, charges accumulate on the surface of the dielectric film 4. This bulge has the disadvantage that the object to be treated A cannot be removed.
そのため、N2ガスの圧力を高くして（0.9Kg／
cm2以上）、誘電体膜４の膨出を行なう手段が考え
られるが、このような手段では、電極２と誘電体
膜４との貼着がはがれ、必要以上に誘電体膜４が
膨出してしまい、被処理物Ａが支持台１８にたた
きつけられて損傷を受けるという欠点を有するも
のである。 Therefore, we increased the pressure of N2 gas (0.9Kg/
cm 2 or more), a method of bulging the dielectric film 4 may be considered, but such a method would cause the electrode 2 and the dielectric film 4 to peel off, causing the dielectric film 4 to bulge out more than necessary. This has the disadvantage that the workpiece A is knocked against the support table 18 and damaged.
さらに、上記装置では電極２に孔部１０が設け
られているため、この孔部１０に対応する位置に
被処理物が冷却されなくなり、熱により損傷を受
けるおそれがあるという欠点をも有している。 Furthermore, since the electrode 2 is provided with a hole 10 in the above-mentioned apparatus, the object to be processed is not cooled at a position corresponding to the hole 10 and has the disadvantage that it may be damaged by heat. There is.
本発明は上記欠点を解消するためになされたも
ので、静電チヤツクにより固定された被処理物を
確実に離脱することができ、しかも冷却効果を低
下させることのない被処理物の離脱装置を提供す
ることを目的とするものである。
The present invention has been made in order to eliminate the above-mentioned drawbacks, and provides a device for removing a workpiece that is capable of reliably releasing a workpiece fixed by an electrostatic chuck without reducing the cooling effect. The purpose is to provide
本発明に係る被処理物の離脱装置は、被処理物
を静電的に固定する静電チヤツクの電極の上記被
処理物固定側面に貼着された誘電体膜の一部に、
上記電極に至る放電孔を設けるとともに、この放
電孔を誘電体部材により開放閉塞自在に構成する
ようになされており、被処理物の離脱時に上記誘
電体部材を動作させて上記放電孔を開放すること
により、上記放電孔から放電を起こさせ、上記誘
電体膜および被処理物と上記電極とを同電位にし
て被処理物を離脱させるようになされている。
The device for separating the object to be processed according to the present invention includes a part of the dielectric film attached to the object-fixing side surface of the electrode of the electrostatic chuck that electrostatically fixes the object to be processed.
A discharge hole leading to the electrode is provided, and the discharge hole is configured to be openable and closable by a dielectric member, and when the object to be treated is removed, the dielectric member is operated to open the discharge hole. By doing so, a discharge is generated from the discharge hole, and the dielectric film, the object to be processed, and the electrode are brought to the same potential, and the object to be processed is separated.
以下、本発明の実施例を第２図を参照して説明
し、第１図と同一部分には同一符号を付してその
説明を省略する。
Hereinafter, an embodiment of the present invention will be described with reference to FIG. 2, and the same parts as in FIG. 1 are given the same reference numerals, and the explanation thereof will be omitted.
本実施例においては、カプトン等からなる誘電
体膜４の被処理物Ａ固定部分以外の部分に、電極
２に至る放電孔１９が穿設されている。また、真
空容器１の下方にはエアシリンダ２０が配設さ
れ、このエアシリンダ２０のシヤフト２１が真空
容器１の下面を貫通して真空容器１の内部に延び
ており、このシヤフト２１の上端には、カプトン
等により形成された誘電体部材２２が固着されて
いる。したがつて、この誘電体部材２２は、上記
エアシリンダ２０の作動により昇降自在とされ、
誘電体部材２２を上昇させて誘電体膜４の下面に
密接することにより上記放電孔１９を閉塞すると
ともに、誘電体部材２２を下降させることにより
上記放電孔１９を開放するようになされている。
また、本実施例においてはN2ガスの供給管およ
び排気管は設けられていない。 In this embodiment, a discharge hole 19 extending to the electrode 2 is formed in a portion of the dielectric film 4 made of Kapton or the like other than the portion where the object to be treated A is fixed. Further, an air cylinder 20 is disposed below the vacuum container 1 , and a shaft 21 of this air cylinder 20 extends into the inside of the vacuum container 1 by penetrating the lower surface of the vacuum container 1 . A dielectric member 22 made of Kapton or the like is fixed thereto. Therefore, this dielectric member 22 can be raised and lowered by the operation of the air cylinder 20,
By raising the dielectric member 22 and bringing it into close contact with the lower surface of the dielectric film 4, the discharge hole 19 is closed, and by lowering the dielectric member 22, the discharge hole 19 is opened.
Further, in this embodiment, a supply pipe and an exhaust pipe for N 2 gas are not provided.
本実施例の場合は、通常時およびエツチング時
においては、放電孔１９を誘電体部材２２により
閉塞するようになされるものであり、エツチング
が終了して高周波電源６をOFFにした後、各エ
アシリンダ１６，２０を作動させて支持台１８を
上昇させるとともに誘電体部材２２を下降させ
る。そして、放電孔１９が開放されると、電極２
が真空容器１の内部に露出するため、この内部の
ガス雰囲気中に放電が起こり、プラズマが発生す
る。このプラズマにより誘電体膜４および被処理
物Ａの表面が導電面となるため、電極２と同電位
になり、導電体中には電界が発生しないという物
理的法則から、被処理物Ａは容易に離脱され、支
持台１８上に載置される。その後、直流電源８を
OFFにし、さらに、各エアシリンダ１６，２０
を作動させて、誘電体部材２２により放電孔１９
を閉塞するとともに支持台１８を下降させる。 In the case of this embodiment, the discharge hole 19 is closed by the dielectric member 22 during normal times and during etching, and after etching is completed and the high frequency power source 6 is turned off, each air The cylinders 16 and 20 are operated to raise the support base 18 and lower the dielectric member 22. Then, when the discharge hole 19 is opened, the electrode 2
is exposed inside the vacuum vessel 1, so a discharge occurs in the gas atmosphere inside the vacuum vessel 1, and plasma is generated. Due to this plasma, the dielectric film 4 and the surface of the object A to be processed become conductive surfaces, so they have the same potential as the electrode 2, and due to the physical law that no electric field is generated in a conductor, the object A to be processed can be easily It is detached and placed on the support stand 18. After that, turn on the DC power supply 8.
OFF, then each air cylinder 16, 20
is activated to open the discharge hole 19 by the dielectric member 22.
The supporting platform 18 is lowered.
したがつて本実施例においては、N2ガスによ
り誘電体膜を膨出させる必要がないので、誘電体
膜に電荷が蓄積された場合であつても、容易にか
つ確実に被処理物を離脱させることができる。ま
た、電極に孔部を設ける必要がないので、この孔
部による冷却効率の低下を防止することもでき
る。 Therefore, in this example, there is no need to bulge the dielectric film with N 2 gas, so even if charges are accumulated in the dielectric film, the object to be processed can be easily and reliably removed. can be done. Furthermore, since there is no need to provide holes in the electrode, it is possible to prevent the cooling efficiency from decreasing due to the holes.
なお、真空容器内のガス雰囲気中に放電を起こ
させる手段として、電極棒を真空容器内部に配設
し、被処理物の離脱時のみ上記電極棒に直流電圧
を印加するようにしても同様の効果を得ることが
できる。また、本実施例においてはRIE装置に適
用した場合についてのみ説明したが、スパツタリ
ング装置、プラズマCVD装置、イオン注入装置、
電子ビーム描画装置、電子ビームアニール装置等
真空容器内で静電チヤツタを使用する装置であれ
ば、いずれの装置に適用してもよい。 Note that as a means for causing discharge in the gas atmosphere within the vacuum container, an electrode rod may be disposed inside the vacuum container, and a DC voltage may be applied to the electrode rod only when the object to be treated is removed. effect can be obtained. In addition, in this embodiment, only the case where it is applied to an RIE apparatus was explained, but it is also possible to apply it to a sputtering apparatus, plasma CVD apparatus, ion implantation apparatus, etc.
The present invention may be applied to any device that uses an electrostatic chatter in a vacuum container, such as an electron beam lithography device or an electron beam annealing device.
以上述べたように本発明に係る被処理物の離脱
装置は、静電チヤツクの電極に貼着された誘電体
膜の一部に、上記電極に至る放電孔を設けるとと
もに、この放電孔を誘電体部材により開放閉塞自
在に構成するようになされており、被処理物の離
脱時に上記誘電体部材を動作させて上記放電孔を
開放することにより、上記放電孔から放電を起こ
させ、上記誘電体膜および被処理物と上記電極と
を同電位にして被処理物を離脱させるようにした
ので、N2ガスによる誘電体膜の膨出動作が不要
となり、誘電体膜に電荷が蓄積された場合でも、
被処理物を損傷することなく容易にかつ確実に被
処理物の離脱を行なうことが可能となる。さら
に、従来のように電極に孔部を設ける必要がない
ので、被処理物を均一にかつ効率よく冷却するこ
とができる等の効果を奏する。
As described above, the device for removing a treated object according to the present invention has a discharge hole extending to the electrode in a part of the dielectric film stuck to the electrode of the electrostatic chuck, and also connects the discharge hole to the dielectric film. The dielectric member is configured to be openable and closable by a body member, and when the object to be treated is removed, the dielectric member is operated to open the discharge hole, causing discharge to occur from the discharge hole, and causing the dielectric member to open and close. Since the film, the object to be processed, and the above electrode are made to have the same potential and the object to be processed is separated, there is no need for the dielectric film to bulge due to N2 gas, and when charges are accumulated in the dielectric film, but,
The workpiece can be easily and reliably removed without damaging the workpiece. Furthermore, since there is no need to provide a hole in the electrode as in the conventional method, the object to be processed can be cooled uniformly and efficiently.
第１図は従来の離脱装置をRIE装置に適用した
例を示す正面断面図、第２図は本発明の一実施例
を示す正面断面図である。
１……真空容器、２……電極、３……絶縁板、
４……誘電体膜、５……導管、６……高周波電
源、７……マツチング回路、８……直流電源、９
……チヨークコイル、１０……孔部、１１……
N2ガス供給管、１２……N2ガス排気管、１３…
…電磁弁、１４……ガス導入管、１５……排気
管、１６，２０……エアシリンダ、１７，２１…
…シヤフト、１８……支持台、１９……放電孔、
２２……誘電体部材。
FIG. 1 is a front sectional view showing an example in which a conventional detachment device is applied to an RIE device, and FIG. 2 is a front sectional view showing an embodiment of the present invention. 1... Vacuum container, 2... Electrode, 3... Insulating plate,
4... Dielectric film, 5... Conduit, 6... High frequency power supply, 7... Matching circuit, 8... DC power supply, 9
...Chiyoke coil, 10...Hole, 11...
N2 gas supply pipe, 12... N2 gas exhaust pipe, 13...
... Solenoid valve, 14 ... Gas introduction pipe, 15 ... Exhaust pipe, 16, 20 ... Air cylinder, 17, 21 ...
...Shaft, 18...Support stand, 19...Discharge hole,
22...Dielectric member.
Claims (1)
電極の上記被処理物固定側面に貼着された誘電体
膜の一部に、上記電極に至る放電孔を設けるとと
もに、この放電孔を誘電体部材により開放閉塞自
在に構成したことを特徴とする被処理物の離脱装
置。1 A discharge hole leading to the electrode is provided in a part of the dielectric film attached to the side surface of the electrode of the electrostatic chuck that electrostatically fixes the workpiece, and this discharge hole is A device for removing a processed object, characterized in that it is configured to be openable and closable by a dielectric member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18743683A JPS6079725A (en) | 1983-10-06 | 1983-10-06 | Separating device for material to be processed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18743683A JPS6079725A (en) | 1983-10-06 | 1983-10-06 | Separating device for material to be processed |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6079725A JPS6079725A (en) | 1985-05-07 |
| JPH0263305B2 true JPH0263305B2 (en) | 1990-12-27 |
Family
ID=16206023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18743683A Granted JPS6079725A (en) | 1983-10-06 | 1983-10-06 | Separating device for material to be processed |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6079725A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230325A (en) * | 1985-07-31 | 1987-02-09 | Tokuda Seisakusho Ltd | Treating apparatus for semiconductor |
| JP2725594B2 (en) * | 1994-04-28 | 1998-03-11 | 松下電器産業株式会社 | Gas laser device |
-
1983
- 1983-10-06 JP JP18743683A patent/JPS6079725A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6079725A (en) | 1985-05-07 |
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