JPH0263121A - Manufacture of photoelectric conversion device - Google Patents
Manufacture of photoelectric conversion deviceInfo
- Publication number
- JPH0263121A JPH0263121A JP63214445A JP21444588A JPH0263121A JP H0263121 A JPH0263121 A JP H0263121A JP 63214445 A JP63214445 A JP 63214445A JP 21444588 A JP21444588 A JP 21444588A JP H0263121 A JPH0263121 A JP H0263121A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photoelectric conversion
- conversion device
- aqueous solution
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000007864 aqueous solution Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims abstract description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000002344 surface layer Substances 0.000 claims abstract description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000243 solution Substances 0.000 abstract description 2
- 238000007865 diluting Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、充電変換装置の製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method of manufacturing a charging conversion device.
従来の光電変換装置は、第２図に示すような構造であり
、酸化インジウムを主成分とした透明電極を形成し下部
型ｉ傘として、そのまま使用していた。A conventional photoelectric conversion device has a structure as shown in FIG. 2, in which a transparent electrode mainly composed of indium oxide is formed and used as a lower type i-umbrella.
しかし、前述の従来技術では下部電極形成の洗浄工程に
おいて、該下部電極形成面に水分や空気中の異物が吸着
しやすく、しかも時間によって特性が変化するという欠
点を有していた。その上に光電変換層及び上部電極を形
成していたが、異物によるフレーク、異常成長等の欠陥
により上下電極のショートを発生させる為、耐湿信頼性
を低下させる大きな要因であった。However, the above-mentioned conventional technology has the disadvantage that moisture and foreign matter in the air are likely to be adsorbed to the surface on which the lower electrode is formed during the cleaning process for forming the lower electrode, and the characteristics change over time. A photoelectric conversion layer and an upper electrode were formed thereon, but defects such as flakes and abnormal growth due to foreign matter caused short circuits between the upper and lower electrodes, which was a major factor in reducing moisture resistance reliability.
以上に述べたように、従来の充電変換装置は下部電極形
成面と上部電極形成面の間に欠陥が多く歩留が低く信頼
性も低いという問題点を有していた０本発明はこのよう
な問題点を解決するもので歩留、信頼性の高い充電変換
装置を提供することを目的とする。As described above, the conventional charging conversion device has a problem in that there are many defects between the lower electrode forming surface and the upper electrode forming surface, resulting in low yield and low reliability. The purpose of the present invention is to provide a charging conversion device that solves these problems and has high yield and reliability.
本発明の充電変換装置は、絶縁性透明基板に下部電極と
して、酸化インジウムを主成分とした透明電極を形成し
、その上に光電変換層及び上部電極を形成する光電変換
装置の製造方法において、該光電変換層を形成する前に
、該透明電極の表面層をフッ化水素酸を主成分とした水
溶液でエツチングしたことを特徴とする。The charging conversion device of the present invention includes a method for manufacturing a photoelectric conversion device in which a transparent electrode mainly composed of indium oxide is formed as a lower electrode on an insulating transparent substrate, and a photoelectric conversion layer and an upper electrode are formed thereon. The present invention is characterized in that, before forming the photoelectric conversion layer, the surface layer of the transparent electrode is etched with an aqueous solution containing hydrofluoric acid as a main component.
第１図は、本発明における実施例の構造断面図であり、
酸化インジウムを主成分とした透明電極付近を示す。FIG. 1 is a structural sectional view of an embodiment of the present invention,
The area around the transparent electrode whose main component is indium oxide is shown.
第１図において、１は絶縁性透明基板、２は透明電極、
３はアモルファスシリコン、４はアルミ電極層である。In FIG. 1, 1 is an insulating transparent substrate, 2 is a transparent electrode,
3 is amorphous silicon, and 4 is an aluminum electrode layer.
第２図において、５は透明電極２の表面に付着した汚れ
、及び表面の変質を示す。In FIG. 2, 5 indicates dirt attached to the surface of the transparent electrode 2 and deterioration of the surface.
絶縁性基板は、両面研磨した透明石英基板を用い、透明
電極はＳｎＯ２をドープしたＩｎ２０３（ＩＴｏ）を用
いスパッタ法で、アモルファスシリコンはプラズマＣＶ
Ｄ法で、アルミ電極はスパッタ法でそれぞれ形成した。The insulating substrate is a transparent quartz substrate polished on both sides, the transparent electrode is made of In203 (ITo) doped with SnO2 by sputtering, and the amorphous silicon is made by plasma CVD.
In method D, aluminum electrodes were formed by sputtering.
アモルファスシリコンを堆積する前に、ＩＴＯの）いた
基板を、フッ化水素酸水溶液−水を１：３０の比で希釈
した溶液に約１０秒間浸漬し、水洗・乾燥を行なった。Before depositing amorphous silicon, the substrate containing ITO was immersed for about 10 seconds in a diluted solution of hydrofluoric acid aqueous solution and water at a ratio of 1:30, and then washed with water and dried.
このようにして製造した光電換装置について、下部電極
部上の欠陥密度の従来例との比較を第１表に示す、なお
、欠陥密度は金属顕微鏡の２００倍の倍率で１μ以上の
欠陥を計数した。Table 1 shows a comparison of the defect density on the lower electrode part of the photovoltaic device manufactured in this way with the conventional example.The defect density is determined by counting defects of 1μ or more at 200x magnification with a metallurgical microscope. did.
第１表
この結果かられかるように、下部電極部上の欠陥密度は
従来の方法と比較して半分以下となり、特に歩留に大き
く彰饗する３μ以上の欠陥は約１／３となっており著し
い効果が得られた。Table 1 As can be seen from the results, the defect density on the lower electrode part is less than half that of the conventional method, and in particular, the defect density of 3μ or more, which greatly improves the yield, is about 1/3. A remarkable effect was obtained.
また長時間放置した下部電極面に付着した汚れ、表面の
変質も濃度調整した水溶液でエツチングすることで改善
された。放置時間と水溶液濃度について第２表に示す。In addition, dirt and surface deterioration that had adhered to the lower electrode surface after being left for a long period of time were improved by etching with an aqueous solution of adjusted concentration. Table 2 shows the standing time and aqueous solution concentration.
１）下部電極部の欠陥密度が著しく少なくなり、品質が
安定し歩留向上となる。1) The defect density in the lower electrode portion is significantly reduced, resulting in stable quality and improved yield.
２）下部電極部形成後の長期保存が可能になり、耐湿の
良好な時に作り置きができる。2) It becomes possible to store the lower electrode part for a long time after formation, and it can be prepared in advance when moisture resistance is good.
３）製造方法が従来技術を使用できる為、容易に製造で
きる。3) Since the manufacturing method can use conventional technology, it can be manufactured easily.
このように、本発明は高歩留、高品質、高信頼性の光電
変換装置を提供するものであり、半導体や電子デバイス
に応用できる為、実用上有用な発明である。As described above, the present invention provides a photoelectric conversion device with high yield, high quality, and high reliability, and is a practically useful invention because it can be applied to semiconductors and electronic devices.
第２表
この結果かられかるように、下部電極形成後長期保存が
可能となった。Table 2 As can be seen from the results, long-term storage was possible after forming the lower electrode.
本発明による充電変換装置の効果を以下に述べ The effects of the charging conversion device according to the present invention will be described below.
第１図は本発明の光電変換装置の主要断面図、第２図は
従来の光電変換装置の主要断面図を示す。
以 上
出願人 セイコーエプソン株式会社FIG. 1 is a main sectional view of a photoelectric conversion device of the present invention, and FIG. 2 is a main sectional view of a conventional photoelectric conversion device. Applicant: Seiko Epson Corporation
Claims (1)
成分とした透明電極を形成し、その上に光電変換層及び
上部電極を形成する光電変換装置の製造方法において、
該光電変換層を形成する前に、該透明電極の表面層をフ
ッ化水素酸を主成分とした水溶液でエッチングしたこと
を特徴とする光電変換装置の製造方法。In a method for manufacturing a photoelectric conversion device, in which a transparent electrode mainly composed of indium oxide is formed as a lower electrode on an insulating transparent substrate, and a photoelectric conversion layer and an upper electrode are formed thereon,
A method for manufacturing a photoelectric conversion device, characterized in that, before forming the photoelectric conversion layer, the surface layer of the transparent electrode is etched with an aqueous solution containing hydrofluoric acid as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63214445A JPH0263121A (en) | 1988-08-29 | 1988-08-29 | Manufacture of photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63214445A JPH0263121A (en) | 1988-08-29 | 1988-08-29 | Manufacture of photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0263121A true JPH0263121A (en) | 1990-03-02 |
Family
ID=16655887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63214445A Pending JPH0263121A (en) | 1988-08-29 | 1988-08-29 | Manufacture of photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0263121A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999039390A1 (en) * | 1998-01-28 | 1999-08-05 | Citizen Watch Co., Ltd. | Method of producing solar cell device |
-
1988
- 1988-08-29 JP JP63214445A patent/JPH0263121A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999039390A1 (en) * | 1998-01-28 | 1999-08-05 | Citizen Watch Co., Ltd. | Method of producing solar cell device |
| US6207471B1 (en) | 1998-01-28 | 2001-03-27 | Citizen Watch, Co., Ltd | Method of producing solar cell device |
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