JPH0263112A - Resist treatment apparatus - Google Patents
Resist treatment apparatusInfo
- Publication number
- JPH0263112A JPH0263112A JP21409888A JP21409888A JPH0263112A JP H0263112 A JPH0263112 A JP H0263112A JP 21409888 A JP21409888 A JP 21409888A JP 21409888 A JP21409888 A JP 21409888A JP H0263112 A JPH0263112 A JP H0263112A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resist
- carrier
- wafer carrier
- sender
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 abstract description 55
- 238000000034 method Methods 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000002950 deficient Effects 0.000 abstract description 3
- 239000000428 dust Substances 0.000 abstract description 3
- 230000007246 mechanism Effects 0.000 abstract description 3
- 239000004642 Polyimide Substances 0.000 abstract description 2
- 230000018044 dehydration Effects 0.000 abstract description 2
- 238000006297 dehydration reaction Methods 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- 230000035939 shock Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、半導体製造装置に係り、特にレジストの塗
布、現像等を自動的に行うレジスト処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to a resist processing equipment that automatically performs resist coating, development, etc.
[従来の技術]
ホトレジスト処理工程は、主としてレジスト塗布、プレ
ベーク→露光→現像→ポストベークなどの一連の工程か
ら成り、このような処理装置としてレジスト塗布とデバ
イトレージョンベーク及びブレベークを組み合わせたコ
ータ、現像とポストベークを組み合わせたデベロッパ、
更にはこのようなコータとデベロッパをラインでつなぎ
、中間に露光装置とのインターフェース部を設けたもの
などがある。[Prior Art] A photoresist processing process mainly consists of a series of steps such as resist coating, pre-bake → exposure → development → post-bake, and such processing equipment includes a coater that combines resist coating, Debite region bake and bre-bake; A developer that combines development and post-bake,
Furthermore, there is one in which such a coater and developer are connected by a line, and an interface section with an exposure device is provided in the middle.
このようなインラインの処理装置においては、センダと
呼ばれるウェハ供給部に半導体ウェハを数10枚収納し
たキャリアを載置し、センダからウェハを一枚ずつレジ
スト塗布−置、ベーク装置等の処理装置へ順次搬送する
。そして、処理済のウェハはレシーバに載置された空の
キャリア内に順次収納される。又、各処理装置間の処理
時間のずれを調整するためウェハを一時載置するバッフ
ァが設けられている。In such in-line processing equipment, a carrier containing several dozen semiconductor wafers is placed on a wafer supply unit called a sender, and the wafers are transferred one by one from the sender to processing equipment such as resist coating, placement, and baking equipment. Convey sequentially. The processed wafers are then sequentially stored in empty carriers placed on the receiver. In addition, a buffer is provided in which the wafer is temporarily placed in order to adjust the difference in processing time between each processing device.
[発明が解決しようとする課題]
ところで、一般にホトレジスト処理工程においては、異
物、ピンホールなどの欠陥のない塗膜を得るため前処理
工程として(膜形成工程の後処理として)スクラブ工程
を行い、ウェハ表面の異物を予め除去する。しかるに、
従来のホトレジスト処理装置においては、ウェハキャリ
アを載置するセンダ、レシーバあるいはバッファの載置
台は、その表面材質がアルミナであるため、キャリアを
載置する際、表面に傷がつき金属粉を生じる。この金属
粉が飛散しウェハ表面に付着すると、良好なレジスト塗
膜が得られず不良品発生、歩留り低下の原因となる。[Problems to be Solved by the Invention] By the way, generally in the photoresist treatment process, a scrubbing process is performed as a pretreatment process (as a post-treatment of the film forming process) in order to obtain a coating film free of defects such as foreign objects and pinholes. Foreign matter on the wafer surface is removed in advance. However,
In conventional photoresist processing equipment, the surface material of the sender, receiver, or buffer mounting table on which the wafer carrier is placed is alumina, so when the carrier is placed on the surface, the surface is scratched and metal powder is generated. If this metal powder scatters and adheres to the wafer surface, a good resist coating film cannot be obtained, leading to the occurrence of defective products and a decrease in yield.
この発明は、このような従来の問題点を解決するために
なされたもので、処理工程内でのウェハの異物付着を極
力減少させたレジスト処理装置を提供することを目的と
する。The present invention has been made to solve these conventional problems, and it is an object of the present invention to provide a resist processing apparatus in which the attachment of foreign matter to a wafer during the processing process is minimized.
[課題を解決するための手段]
このような目的を達成する本発明のレジスト処理装置は
、レジストの塗布ライン及び/又は現像ラインを含むレ
ジスト処理装置であって、少なくともウェハキャリアと
接触する表面を樹脂コーティングして成るウェハキャリ
ア載置台を有することを特徴とする。[Means for Solving the Problems] A resist processing apparatus of the present invention that achieves the above object is a resist processing apparatus that includes a resist coating line and/or a resist development line, and includes at least a surface that contacts a wafer carrier. It is characterized by having a wafer carrier mounting table made of resin coating.
[作用]
ウェハに設けられた各ウェハキャリア載置台はその表面
を樹脂コーティングされているので、マニュアルである
いはロボットアーム等でウェハキャリアを載置してもウ
ェハキャリアの材質に関係なく、その時の衝撃で傷がつ
いたり、金属粉が発生することなくライン内での無塵化
が図れる。[Function] The surface of each wafer carrier mounting table installed on the wafer is coated with resin, so even if the wafer carrier is mounted manually or with a robot arm, regardless of the material of the wafer carrier, the impact will not be affected. The line can be dust-free without being scratched or generating metal powder.
[実施例]
以下、本発明をコータ(塗布ライン)に適用した一実施
例を図面を参照して説明する・第1図はコータの構成を
示す図であり、ウェハを供給するための2つのセンダ1
と、それに直列に連結されたベーク装置2.ベーク後の
ウェハを冷却するためのクーリング装置3、ウェハを一
時載置するためのバッファ4、ウェハ表面にレジスト膜
を形成するための塗布装置5、プレベーク装置6及び2
つのレシーバ7と前面操作パネル8とから成る。[Example] Hereinafter, an example in which the present invention is applied to a coater (coating line) will be described with reference to the drawings. ・Figure 1 is a diagram showing the structure of the coater, and there are two sender 1
and a baking device connected in series thereto2. A cooling device 3 for cooling the wafer after baking, a buffer 4 for temporarily placing the wafer, a coating device 5 for forming a resist film on the wafer surface, and pre-baking devices 6 and 2
It consists of two receivers 7 and a front operation panel 8.
センダ1は第2図及び第3図に示すように未処理ウェハ
Wが多数収納されたウェハキャリア9を設置するための
ウェハキャリア載置台10と、ウェハキャリア9から未
処理ウェハを一枚ずつ取り出しベーク装置2に搬送する
ための搬送機構例えば搬送ベルト11を備える。As shown in FIGS. 2 and 3, the sender 1 includes a wafer carrier mounting table 10 for installing a wafer carrier 9 containing a large number of unprocessed wafers W, and a wafer carrier mounting table 10 for taking out unprocessed wafers one by one from the wafer carrier 9. A conveyance mechanism such as a conveyor belt 11 for conveying to the baking device 2 is provided.
ベーク装置2は例えばウェハとレジスト4との密着性を
高めるため未処理ウェハの水分及び/又はウェハ表面の
水酸基を予め除去するためのデバイトレージョンベーク
装置で、例えばホットプレートを備え、ダイレクト方式
又はプロキシミティ方式で200℃〜300℃の熱処理
を行うことができる。The baking device 2 is, for example, a deviation baking device for previously removing moisture and/or hydroxyl groups on the wafer surface in an unprocessed wafer in order to improve the adhesion between the wafer and the resist 4, and is equipped with a hot plate, for example, and is a direct method or Heat treatment at 200°C to 300°C can be performed using a proximity method.
クーリング装置3は、ベーク装置2によって高温となっ
たウェハをレジスト塗布に適した温度まで下げるための
装置で冷却用のプレートを備え、べ−り装置2と同様に
ダイレクト方式又はプロキシミティ方式でウェハを冷却
する。The cooling device 3 is a device for lowering the temperature of the wafer heated to high temperature by the baking device 2 to a temperature suitable for resist coating. to cool down.
バッファ4は第4図に示すようにデバイトレージョンベ
ークとその後のレジスト塗布とのタイムラグを調整する
ためのステーションで、バッファ用キャリアがアップダ
ウン機構を備えた載置台40に載置されており、クーリ
ング済のウェハが一時このバッファ用キャリア9′に収
納される。このバッファ4はベーキング等の処理条件の
変更に対応してパススルー(ウェハを通過させるだけ)
に機能変更することができる。As shown in FIG. 4, the buffer 4 is a station for adjusting the time lag between the deviation bake and the subsequent resist coating, and the buffer carrier is placed on a mounting table 40 equipped with an up-down mechanism. A cooled wafer is temporarily stored in this buffer carrier 9'. This buffer 4 is pass-through (just allows the wafer to pass through) in response to changes in processing conditions such as baking.
The function can be changed to
塗布装置5は1本実施例においては、スピンコータが用
いられ、チャック上のウェハ上にレジストを滴下した後
、ウェハを数百〜数千回転/min回転させることによ
りウェハ上に均一なレジスト膜を形成させる。In this embodiment, a spin coater is used as the coating device 5, and after dropping the resist onto the wafer on the chuck, the wafer is rotated at several hundred to several thousand revolutions/min to form a uniform resist film on the wafer. Let it form.
ブレベーク装置6は図示しないが、ベーク装置2と同様
のホットプレートを備え、レジスト塗布後のウェハを約
100℃に加熱することによりレジスト中の残留溶剤を
蒸発させると共に塗布膜とウェハの密着性を強化する。Although not shown, the bre-bake device 6 is equipped with a hot plate similar to the bake device 2, and heats the wafer after resist coating to about 100°C to evaporate the residual solvent in the resist and improve the adhesion between the coated film and the wafer. Strengthen.
レシーバ7は第5図に示すようにセンダ1と同様の構成
を有し、空のウェハキャリア9が載置されたウェハキャ
リア載置台70と空のウェハキャリアへレジスト塗布処
理済のウェハWを搬送するための搬送機構71を備え、
更に図示しない露光装置にインターフェース部を介して
連結することができる。The receiver 7 has the same configuration as the sender 1 as shown in FIG. 5, and transports the resist-coated wafer W to the wafer carrier mounting table 70 on which the empty wafer carrier 9 is placed and the empty wafer carrier. It includes a transport mechanism 71 for
Furthermore, it can be connected to an exposure device (not shown) via an interface section.
更に、センダl、バッファ4及びレシーバ7の各ウェハ
キャリア載置台10.40.70は少なくともその表面
がフッ素樹脂、ポリアミド、ポリイミド等の耐熱性、耐
衝撃性、耐摩耗性等のすぐれた樹脂によりコーティング
されている。このような樹脂コーティングされた載置台
はAM等から成るウェハキャリアを載置した場合、傷が
つきにくく、衝撃による粉塵の発生がない。Furthermore, each wafer carrier mounting table 10, 40, 70 of the sender 1, buffer 4, and receiver 7 has at least its surface made of a resin with excellent heat resistance, impact resistance, abrasion resistance, etc., such as fluororesin, polyamide, or polyimide. Coated. When a wafer carrier made of AM or the like is placed on such a resin-coated mounting table, it is hard to be scratched and does not generate dust due to impact.
従って、このように構成されるレジスト処理装置におい
ては、オペレーションパネル8の操作によってウェハは
センダ1のウェハキャリアから搬送機構11によって取
り出され、順次デハイドレーシJンベーク、クーリング
、レジスト塗布、プレベークの各処理が施され、レシー
バ7のウェハキャリア内に収納されるが、この間高度な
無塵状態で処理を行うことができる。Therefore, in the resist processing apparatus configured as described above, the wafer is taken out from the wafer carrier of the sender 1 by the transport mechanism 11 by operating the operation panel 8, and the wafers are sequentially subjected to the following processes: dehydration baking, cooling, resist coating, and pre-baking. The wafer is processed and stored in the wafer carrier of the receiver 7, during which time the processing can be performed in a highly dust-free state.
以上、塗布ラインについて説明したが、本発明は現像ラ
インその他の処理装置に適用できることはいうまでもな
い。Although the coating line has been described above, it goes without saying that the present invention can be applied to development lines and other processing equipment.
[発明の効果]
以上の説明からも明らかなように本発明のレジスト処理
装置においては、装置内での塵の発生を極力押えたので
、不良品の発生を少なくし、歩留りの向上を図ることが
できる。[Effects of the Invention] As is clear from the above description, in the resist processing apparatus of the present invention, the generation of dust within the apparatus is suppressed as much as possible, thereby reducing the generation of defective products and improving the yield. Can be done.
第1図は本発明が適用されるレジスト処理装置の構成図
、第2図は同処理装置の一部斜視図、第3図はウェハキ
ャリア載置台の一実施例を示す図、第4図は第1図と同
じ処理装置の一部斜視図、第5図はウェハキャリア載置
台の一実施例を示す図である。
■・・・・・・−センダ
2・・・・・・・ベーク装置
3・・・・・・・クーリング装置
4・・・・・・・バッファ
5・・・・・・・コータ
6・・・・・・・ベーク装置
7・・・・・・・レシーバ
8・・・・・・・オペレーションパネル9・・・・・・
・ウェハキャリア
10.40.70・・・・・・ウェハキャリア載置台1
1.71・・・・・・ウェハ搬送機構第1図FIG. 1 is a block diagram of a resist processing apparatus to which the present invention is applied, FIG. 2 is a partial perspective view of the same processing apparatus, FIG. 3 is a diagram showing an embodiment of a wafer carrier mounting table, and FIG. FIG. 5 is a partial perspective view of the same processing apparatus as FIG. 1, and FIG. 5 is a diagram showing an embodiment of the wafer carrier mounting table. - Sender 2...Bake device 3...Cooling device 4...Buffer 5...Coater 6... ...Bake device 7 ...Receiver 8 ...Operation panel 9 ...
・Wafer carrier 10.40.70...Wafer carrier mounting table 1
1.71...Wafer transport mechanism Figure 1
Claims (1)
スト処理装置であって、少なくともウェハキャリアと接
触する表面を樹脂コーティングして成るウェハキャリア
載置台を有することを特徴とするレジスト処理装置。1. A resist processing apparatus including a resist coating line and/or a resist development line, the apparatus comprising a wafer carrier mounting table whose surface in contact with a wafer carrier is coated with a resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21409888A JPH0263112A (en) | 1988-08-29 | 1988-08-29 | Resist treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21409888A JPH0263112A (en) | 1988-08-29 | 1988-08-29 | Resist treatment apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0263112A true JPH0263112A (en) | 1990-03-02 |
Family
ID=16650191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21409888A Pending JPH0263112A (en) | 1988-08-29 | 1988-08-29 | Resist treatment apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0263112A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008026733A1 (en) | 2006-08-31 | 2008-03-06 | Zeon Corporation | Hydrogenated norbornene-based ring-opening polymerization polymers, resin composition, and molded objects |
-
1988
- 1988-08-29 JP JP21409888A patent/JPH0263112A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008026733A1 (en) | 2006-08-31 | 2008-03-06 | Zeon Corporation | Hydrogenated norbornene-based ring-opening polymerization polymers, resin composition, and molded objects |
EP2305729A1 (en) | 2006-08-31 | 2011-04-06 | Zeon Corporation | Hydrogenated norbornene-based ring-opening polymerization polymer, resin composition, and molded object |
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