JPH0262940B2 - - Google Patents

Info

Publication number
JPH0262940B2
JPH0262940B2 JP59016158A JP1615884A JPH0262940B2 JP H0262940 B2 JPH0262940 B2 JP H0262940B2 JP 59016158 A JP59016158 A JP 59016158A JP 1615884 A JP1615884 A JP 1615884A JP H0262940 B2 JPH0262940 B2 JP H0262940B2
Authority
JP
Japan
Prior art keywords
light
light source
shutter
laser
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59016158A
Other languages
Japanese (ja)
Other versions
JPS60162218A (en
Inventor
Hideki Ine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59016158A priority Critical patent/JPS60162218A/en
Publication of JPS60162218A publication Critical patent/JPS60162218A/en
Publication of JPH0262940B2 publication Critical patent/JPH0262940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G02B26/04Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light by periodically varying the intensity of light, e.g. using choppers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 [技術分野] 本発明はレーザー、特に、エキシマレーザーを
光源として用いた露光装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an exposure apparatus using a laser, particularly an excimer laser, as a light source.

[従来技術] 従来から、輝度が高いエキシマレーザー等のレ
ーザー光源を使用した露光装置が知られている。
[Prior Art] Exposure apparatuses that use a laser light source such as a high-luminance excimer laser are conventionally known.

しかしながら、レーザー光はコヒーレンシーを
有するので、レーザー光でマスクやウエハを照明
する場合、マスクやウエハ上に干渉縞が生じ、露
光むらが発生する。
However, since laser light has coherency, when a mask or wafer is illuminated with laser light, interference fringes are generated on the mask or wafer, resulting in uneven exposure.

この種の干渉縞を抑制するためには、例えば、
光分割器でレーザー光を複数の光束に分割し、複
数の光束間に互いにレーザー光の可干渉距離以上
の光路長差を与える光学系を、露光装置に搭載す
る必要がある。
In order to suppress this kind of interference fringes, for example,
The exposure apparatus needs to be equipped with an optical system that splits the laser beam into a plurality of light beams using a light splitter and provides an optical path length difference between the plurality of light beams that is greater than the coherence length of the laser beams.

[発明の概要] 本発明の目的は、レーザー光を複数個の光束に
分割する光学系とレーザー光を開口で絞ることに
より光量を調節する光量調節手段とを効果的に配
列した露光装置を提供することにある。
[Summary of the Invention] An object of the present invention is to provide an exposure apparatus that effectively arranges an optical system that splits a laser beam into a plurality of light beams and a light amount adjustment means that adjusts the amount of light by narrowing down the laser beam with an aperture. It's about doing.

この目的を達成するために、本発明の露光装置
は、レーザー光源と、レンズアレイと、該レーザ
ー光源と該レンズアレイの間に設けられ、該レー
ザー光源からの光束を半透鏡アレイで複数個の光
束に分割して該複数個の光束を該レンズアレイに
入射せしめる光分割系と、該レンズアレイの各レ
ンズから射出する光束をマスクに照射する照射光
学系とを有し、該照射光学系により照射した光束
で該マスクのパターンをウエハー上に転写する露
光装置であつて、前記レーザー光源からの光束を
所定の開口で絞ることにより該光束の光量を調節
する光量調節手段を前記レーザー光源と前記複数
個の半透鏡の間に配置したことを特徴とする。
To achieve this object, the exposure apparatus of the present invention is provided with a laser light source, a lens array, and between the laser light source and the lens array. It has a light splitting system that divides the plurality of light beams into light beams and makes the plurality of light beams enter the lens array, and an irradiation optical system that irradiates the mask with the light beams emitted from each lens of the lens array. The exposure apparatus transfers the pattern of the mask onto the wafer using the irradiated light beam, and includes a light amount adjusting means that adjusts the light amount of the light beam by narrowing the light beam from the laser light source through a predetermined aperture. It is characterized by being placed between multiple semi-transparent mirrors.

[実施例] 以下、図面を参照しながら本露光装置の一実施
例について説明する。
[Example] Hereinafter, an example of the present exposure apparatus will be described with reference to the drawings.

第1図は本露光装置で使用される光量調節手段
の一例である回転シヤツターを示しており、この
シヤツター1は、光量変更用の開口部2,3,4
を有する。この開口部2,3,4の面積比は1:
1/2:1/1:4である。第2図はエキシマレ
ーザーから射出したパルス状のレーザー光5がシ
ヤツター1の開口部2,3,4の内の所定の開口
部に入射するようにシヤツター1の回転を制御す
る機構を示す図である。図中、6は発光ダイオー
ド、8は開口部2,3,4を介して発光ダイオー
ド6からの光7を検知する受光素子、9は、受光
素子8からの、第3図に示す如き出力信号を検知
し、この出力信号に基づいてレーザー光5が開口
部2,3,4の内の所定の開口部を照射するよう
にシヤツター1の回転軸10の回転を制御する制
御装置である。ここで、第3図は、開口部2,
3,4を介して受光素子8で受光された、発光ダ
イオード6からの光7の光量に対応する信号を示
す図であり、図において、パルス2′,3′,4′,
はそれぞれ開口部2,3,4を介して受光した時
の受光素子8からの出力信号である。制御装置9
は、この出力信号によつて、開口部2,3,4の
位置や速度を検出する。
FIG. 1 shows a rotary shutter, which is an example of a light amount adjustment means used in this exposure apparatus.
has. The area ratio of the openings 2, 3, and 4 is 1:
The ratio is 1/2:1/1:4. FIG. 2 is a diagram showing a mechanism for controlling the rotation of the shutter 1 so that the pulsed laser beam 5 emitted from the excimer laser enters a predetermined opening among the openings 2, 3, and 4 of the shutter 1. be. In the figure, 6 is a light emitting diode, 8 is a light receiving element that detects light 7 from the light emitting diode 6 through the openings 2, 3, and 4, and 9 is an output signal from the light receiving element 8 as shown in FIG. This is a control device that detects the output signal and controls the rotation of the rotation shaft 10 of the shutter 1 so that the laser beam 5 irradiates a predetermined opening among the openings 2, 3, and 4 based on this output signal. Here, FIG. 3 shows the opening 2,
2 is a diagram showing a signal corresponding to the amount of light 7 from the light emitting diode 6 received by the light receiving element 8 via the light emitting diode 6 via the pulses 2', 3', 4',
are output signals from the light receiving element 8 when light is received through the apertures 2, 3, and 4, respectively. Control device 9
detects the positions and speeds of the openings 2, 3, and 4 based on this output signal.

第4図は、エキシマレーザー光によるリソグラ
フイーを行なう本露光装置の概略構成図である。
FIG. 4 is a schematic diagram of the present exposure apparatus that performs lithography using excimer laser light.

同図において、11はエキシマレーザー光源、
1は光量調節手段であり第1図及び第2図で示し
た回転シヤツター、12はエキシマレーザー光源
1からのレーザー光を分割する分割光学系である
半透鏡アレイ、13は半透鏡アレイによつて分割
された光をそれぞれ集光して複数個の2次光源が
分布した有効光源を形成するハエの目レンズ(レ
ンズアレイ)、14はハエの目レンズ13からの
光を集光し、互いに重ね合わせる照射光学系であ
るコリメーターレンズ、15はマスク、16はウ
エハーである。
In the figure, 11 is an excimer laser light source;
Reference numeral 1 is a light amount adjusting means, which is a rotary shutter shown in FIGS. 1 and 2; 12 is a semi-transparent mirror array, which is a splitting optical system that splits the laser beam from the excimer laser light source 1; and 13 is a semi-transparent mirror array. A fly's eye lens (lens array) 14 focuses the divided lights to form an effective light source in which a plurality of secondary light sources are distributed, and 14 focuses the light from the fly's eye lens 13 and overlaps each other. A collimator lens is a collimated irradiation optical system, 15 is a mask, and 16 is a wafer.

本露光装置では、シヤツター1によりレーザー
光の光量を容易に調節できるだけでなく、シヤツ
ター1とハエの目レンズ13の間に半透鏡アレイ
12を配置してレーザー光を複数の光束に分割す
るようにしているので、シヤツター1は、光束径
が比較的小さな分割前のレーザー光を開口部2,
3,4で絞れば良く、シヤツター1を小型化でき
る。
In this exposure apparatus, not only can the light intensity of the laser beam be easily adjusted using the shutter 1, but also a semi-transparent mirror array 12 is arranged between the shutter 1 and the fly's eye lens 13 to divide the laser beam into a plurality of beams. Therefore, the shutter 1 sends the undivided laser beam, which has a relatively small luminous flux diameter, to the aperture 2,
It suffices to narrow down the aperture by 3 or 4, and the shutter 1 can be made smaller.

又、本露光装置では、半透鏡アレイ12を介し
て、ハエの目レンズ13から離れた位置で、レー
ザー光を開口部2,3,4で絞るようにしたた
め、ハエの目レンズ13により形成される有効光
源の大きさがあまり変化しない。従つて、レーザ
ー光を開口部2,3,4で絞るにもかかわらず、
照明光のマスク15に対する入射角をほぼ一定に
でき、マスク15のパターンをウエハー16に転
写する際の解像度を安定させることが可能にな
る。本露光装置の回転シヤツター1の直径を254
mm、回転数を30回/分とし、シヤツター1の中心
から平均100mmの位置に開口部2,3,4を設け
ると、開口部2,3,4の速さは、314.16mm/
secである。一方、光束径30mm、発光時間50nsec
で、エキシマレーザー光源11からレーザー光を
発光させると、この発光時間ではシヤツター1の
開口部の位置は0.0157μmしか移動せず、シヤツ
ター1は実質的に停止していると考えて良い。こ
のような前提において、シヤツター1の回転とパ
ルス状のレーザー光の発光タイミングを同期させ
ることにより、シヤツター1の所定の開口部によ
つてレーザー光の光量を容易に調節することがで
きる。
In addition, in this exposure apparatus, the laser beam is focused through the apertures 2, 3, and 4 at a position away from the fly's eye lens 13 through the semi-transparent mirror array 12, so that the laser beam formed by the fly's eye lens 13 is focused. The size of the effective light source does not change much. Therefore, even though the laser beam is narrowed down by the apertures 2, 3, and 4,
The angle of incidence of the illumination light on the mask 15 can be made substantially constant, and the resolution when transferring the pattern of the mask 15 onto the wafer 16 can be stabilized. The diameter of rotary shutter 1 of this exposure device is 254
mm, rotation speed is 30 times/min, and the openings 2, 3, and 4 are provided at an average position of 100mm from the center of the shutter 1, the speed of the openings 2, 3, and 4 is 314.16mm/min.
sec. On the other hand, the luminous flux diameter is 30 mm, and the emission time is 50 nsec.
When a laser beam is emitted from the excimer laser light source 11, the position of the opening of the shutter 1 moves only 0.0157 μm during this emission time, and it can be considered that the shutter 1 is substantially stopped. Under such a premise, by synchronizing the rotation of the shutter 1 and the emission timing of the pulsed laser light, the amount of laser light can be easily adjusted by a predetermined opening of the shutter 1.

第4図において、エキシマレーザー光源11か
ら射出したパルス状のレーザー光は、定速度で回
転するシヤツター1の所定の開口部、半透鏡アレ
イ12、ハエの目レンズ13、コリメーターレン
ズ14を介して、マスク15及びウエハー16に
入射する。ここで、レーザー光がシヤツター1の
開口部2を通過するように、エキシマレーザー光
源11の発光タイミングとシヤツター1の回転を
同期させている時に、開口部2を通過したレーザ
ー光の光量が大きすぎる場合は、制御装置9で、
第3図に示す受光素子8からの出力信号に基づい
てシヤツター1の回転速度をモニターしつつ、シ
ヤツター1の開口部3又は4がエキシマレーザー
光源11の発光タイミングと同期してレーザー光
の光路を通過するようにシヤツター1の回転速度
を変調する。これにより、露光光量の適正化が行
なわれる。
In FIG. 4, a pulsed laser beam emitted from an excimer laser light source 11 passes through a predetermined opening of a shutter 1 rotating at a constant speed, a semitransparent mirror array 12, a fly's eye lens 13, and a collimator lens 14. , enters the mask 15 and the wafer 16. Here, when the emission timing of the excimer laser light source 11 and the rotation of the shutter 1 are synchronized so that the laser beam passes through the aperture 2 of the shutter 1, the amount of laser light that has passed through the aperture 2 is too large. In this case, the control device 9
While monitoring the rotational speed of the shutter 1 based on the output signal from the light receiving element 8 shown in FIG. The rotational speed of the shutter 1 is modulated so that the As a result, the amount of exposure light is optimized.

なお、本実施例では開口部を3種類設けたが、
それ以上設けることも可能である。また第5図は
別の実施例に係るシヤツターであるが、17はく
さび型の開口部である。このシヤツターを使用す
る場合は回転タイミングを変えることにより光量
の連続的な調節が可能となる。
Although three types of openings were provided in this example,
It is also possible to provide more than that. FIG. 5 shows a shutter according to another embodiment, in which numeral 17 is a wedge-shaped opening. When using this shutter, the amount of light can be continuously adjusted by changing the rotation timing.

[発明の効果] 以上説明したように、本発明では、レーザー光
の光量を容易に調節でき、しかも、光量調節用の
開口でレーザー光を絞つても、レンズアレイが形
成する有効光源の大きさがあまり変化しないの
で、マスクのパターンをウエハーに転写する時の
解像力が安定している。従つて、信頼性の高い露
光装置を提供することが可能になる。
[Effects of the Invention] As explained above, in the present invention, the light intensity of the laser beam can be easily adjusted, and even if the laser beam is narrowed down by the aperture for adjusting the light intensity, the size of the effective light source formed by the lens array can be reduced. does not change much, so the resolution when transferring the mask pattern to the wafer is stable. Therefore, it is possible to provide a highly reliable exposure apparatus.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の露光装置に使用される光量調
節手段の一例を示す図、第2図は第1図の光量調
節手段を制御する機構を示す図、第3図は第1図
の光量調節手段の開口部を介して受光素子で検知
された光の光量に対応する信号を示す図、第4図
は本発明の露光装置の一例を示す概略構成図、第
5図は光量調節手段の別の実施例を示す図であ
る。 1……シヤツター、2,3,4,17……開口
部、5……レーザー光、6……発光ダイオード、
7……発光ダイオードからの光、8……受光素
子、9……制御装置、10……回転軸、11……
レーザー光源、12……半透鏡アレイ、13……
ハエの目レンズ、14……コリメーターレンズ、
15……マスク、16……ウエハー。
1 is a diagram showing an example of the light amount adjusting means used in the exposure apparatus of the present invention, FIG. 2 is a diagram showing a mechanism for controlling the light amount adjusting means shown in FIG. 1, and FIG. 3 is a diagram showing the light amount shown in FIG. 1. A diagram showing a signal corresponding to the amount of light detected by the light receiving element through the opening of the adjustment means, FIG. 4 is a schematic configuration diagram showing an example of the exposure apparatus of the present invention, and FIG. 5 is a diagram showing the light amount adjustment means. It is a figure which shows another Example. 1... Shutter, 2, 3, 4, 17... Opening, 5... Laser light, 6... Light emitting diode,
7... Light from light emitting diode, 8... Light receiving element, 9... Control device, 10... Rotating shaft, 11...
Laser light source, 12... Semi-transparent mirror array, 13...
Fly's eye lens, 14...Collimator lens,
15...Mask, 16...Wafer.

Claims (1)

【特許請求の範囲】[Claims] 1 レーザー光源と、レンズアレイと、該レーザ
ー光源と該レンズアレイの間に設けられ、該レー
ザー光源からの光束を半透鏡アレイで複数個の光
束に分割して該複数個の光束を該レンズアレイに
入射せしめる光分割系と、該レンズアレイの各レ
ンズから射出する光束をマスクに照射する照射光
学系とを有し、該照射光学系により照射した光束
で該マスクのパターンをウエハー上に転写する露
光装置であつて、前記レーザー光源からの光束を
所定の開口で絞ることにより該光束の光量を調節
する光量調節手段を前記レーザー光源と前記複数
個の半透鏡の間に配置したことを特徴とする露光
装置。
1. A laser light source, a lens array, and a light beam provided between the laser light source and the lens array, which divides the light beam from the laser light source into a plurality of light beams with a semi-transparent mirror array, and transmits the plurality of light beams to the lens array. It has a light splitting system that makes the light incident on the mask, and an irradiation optical system that irradiates the mask with the light flux emitted from each lens of the lens array, and the pattern of the mask is transferred onto the wafer with the light flux irradiated by the irradiation optical system. The exposure apparatus is characterized in that a light amount adjusting means for adjusting the amount of light from the laser light source by narrowing the light beam through a predetermined aperture is disposed between the laser light source and the plurality of semi-transparent mirrors. exposure equipment.
JP59016158A 1984-02-02 1984-02-02 Shutter device Granted JPS60162218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59016158A JPS60162218A (en) 1984-02-02 1984-02-02 Shutter device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59016158A JPS60162218A (en) 1984-02-02 1984-02-02 Shutter device

Publications (2)

Publication Number Publication Date
JPS60162218A JPS60162218A (en) 1985-08-24
JPH0262940B2 true JPH0262940B2 (en) 1990-12-27

Family

ID=11908695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59016158A Granted JPS60162218A (en) 1984-02-02 1984-02-02 Shutter device

Country Status (1)

Country Link
JP (1) JPS60162218A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63193130A (en) * 1987-02-05 1988-08-10 Canon Inc Light quantity controller
US5153773A (en) * 1989-06-08 1992-10-06 Canon Kabushiki Kaisha Illumination device including amplitude-division and beam movements
JP3175180B2 (en) * 1990-03-09 2001-06-11 キヤノン株式会社 Exposure method and exposure apparatus
JP2010089094A (en) * 2008-10-03 2010-04-22 Disco Abrasive Syst Ltd Laser beam machining apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50766A (en) * 1973-05-02 1975-01-07
JPS5046080A (en) * 1973-08-28 1975-04-24
JPS5347825A (en) * 1976-10-12 1978-04-28 Toshiba Corp Photoresist exposure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56119646U (en) * 1980-02-15 1981-09-11

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50766A (en) * 1973-05-02 1975-01-07
JPS5046080A (en) * 1973-08-28 1975-04-24
JPS5347825A (en) * 1976-10-12 1978-04-28 Toshiba Corp Photoresist exposure

Also Published As

Publication number Publication date
JPS60162218A (en) 1985-08-24

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