JPH026228B2 - - Google Patents

Info

Publication number
JPH026228B2
JPH026228B2 JP56098715A JP9871581A JPH026228B2 JP H026228 B2 JPH026228 B2 JP H026228B2 JP 56098715 A JP56098715 A JP 56098715A JP 9871581 A JP9871581 A JP 9871581A JP H026228 B2 JPH026228 B2 JP H026228B2
Authority
JP
Japan
Prior art keywords
switch
phototransistor
photodiode
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56098715A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57212878A (en
Inventor
Masahiro Sakagami
Akio Tamama
Toshiro Ogino
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56098715A priority Critical patent/JPS57212878A/ja
Publication of JPS57212878A publication Critical patent/JPS57212878A/ja
Publication of JPH026228B2 publication Critical patent/JPH026228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56098715A 1981-06-25 1981-06-25 Solid-state image pickup device Granted JPS57212878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56098715A JPS57212878A (en) 1981-06-25 1981-06-25 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56098715A JPS57212878A (en) 1981-06-25 1981-06-25 Solid-state image pickup device

Publications (2)

Publication Number Publication Date
JPS57212878A JPS57212878A (en) 1982-12-27
JPH026228B2 true JPH026228B2 (enrdf_load_html_response) 1990-02-08

Family

ID=14227210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56098715A Granted JPS57212878A (en) 1981-06-25 1981-06-25 Solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS57212878A (enrdf_load_html_response)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6058782A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPH01191979A (ja) * 1988-01-27 1989-08-02 Hitachi Ltd 画像処理装置
US6469289B1 (en) * 2000-01-21 2002-10-22 Symagery Microsystems Inc. Ambient light detection technique for an imaging array

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116966U (enrdf_load_html_response) * 1974-07-26 1976-02-06

Also Published As

Publication number Publication date
JPS57212878A (en) 1982-12-27

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