JPH026224B2 - - Google Patents

Info

Publication number
JPH026224B2
JPH026224B2 JP60000610A JP61085A JPH026224B2 JP H026224 B2 JPH026224 B2 JP H026224B2 JP 60000610 A JP60000610 A JP 60000610A JP 61085 A JP61085 A JP 61085A JP H026224 B2 JPH026224 B2 JP H026224B2
Authority
JP
Japan
Prior art keywords
region
semiconductor
semiconductor device
semiconductor region
opposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60000610A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60167386A (ja
Inventor
Yutaka Hayashi
Hidekazu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60000610A priority Critical patent/JPS60167386A/ja
Publication of JPS60167386A publication Critical patent/JPS60167386A/ja
Publication of JPH026224B2 publication Critical patent/JPH026224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
JP60000610A 1985-01-07 1985-01-07 半導体デバイス Granted JPS60167386A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60000610A JPS60167386A (ja) 1985-01-07 1985-01-07 半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60000610A JPS60167386A (ja) 1985-01-07 1985-01-07 半導体デバイス

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12878777A Division JPS5462787A (en) 1977-10-28 1977-10-28 Semiconductor device and integrated circuit of the same

Publications (2)

Publication Number Publication Date
JPS60167386A JPS60167386A (ja) 1985-08-30
JPH026224B2 true JPH026224B2 (enrdf_load_stackoverflow) 1990-02-08

Family

ID=11478498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60000610A Granted JPS60167386A (ja) 1985-01-07 1985-01-07 半導体デバイス

Country Status (1)

Country Link
JP (1) JPS60167386A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553827B2 (enrdf_load_stackoverflow) * 1972-09-26 1980-01-26
JPS5176981A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd Handotaisochi
US4131902A (en) * 1977-09-30 1978-12-26 Westinghouse Electric Corp. Novel bipolar transistor with a dual-dielectric tunnel emitter

Also Published As

Publication number Publication date
JPS60167386A (ja) 1985-08-30

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