JPH0262023A - Laminated capacitor element and its manufacture - Google Patents
Laminated capacitor element and its manufactureInfo
- Publication number
- JPH0262023A JPH0262023A JP21306888A JP21306888A JPH0262023A JP H0262023 A JPH0262023 A JP H0262023A JP 21306888 A JP21306888 A JP 21306888A JP 21306888 A JP21306888 A JP 21306888A JP H0262023 A JPH0262023 A JP H0262023A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- internal electrode
- copper
- capacitor element
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010949 copper Substances 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 10
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims abstract description 5
- 239000006104 solid solution Substances 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 abstract description 3
- 229910019653 Mg1/3Nb2/3 Inorganic materials 0.000 abstract 1
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 9
- 229910000831 Steel Inorganic materials 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000010959 steel Substances 0.000 description 9
- 239000005751 Copper oxide Substances 0.000 description 8
- 229910000431 copper oxide Inorganic materials 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000003985 ceramic capacitor Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002003 electrode paste Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は鋼を主成分とする内部電極を有する積層コンデ
ンサ素子およびその製造方法に関し、特に絶縁抵抗値が
高いものに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a multilayer capacitor element having an internal electrode mainly composed of steel and a method for manufacturing the same, and particularly relates to a multilayer capacitor element having a high insulation resistance value.
従来の技術
近年セラミックコンデンサは素子の小型化、大容量化へ
の要求から積層型セラミックコンデンサが急速に普及し
つつある。また回路の高周波化により従来電解コンデン
サが用いられていた領域に積層型セラミックコンデンサ
素子を用いる必要が発生している。積層型セラミックコ
ンデンサは内部電極とセラミックを一体焼成する工程に
よって通常製造される。従来より高誘電率系のセラミッ
クコンデンサ材料にはチタン酸バリウム系の材料が用い
られてきたが、焼成温度が１３００℃程度と高いため、
内部電極材料としてはＰｉ、Ｐｄ などの高価な金属
を用いる必要があった。BACKGROUND OF THE INVENTION In recent years, multilayer ceramic capacitors have been rapidly becoming popular due to the demand for smaller ceramic capacitor elements and larger capacitance. Furthermore, as the frequency of circuits increases, it has become necessary to use multilayer ceramic capacitor elements in areas where electrolytic capacitors were conventionally used. Multilayer ceramic capacitors are typically manufactured by a process of integrally firing internal electrodes and ceramics. Barium titanate-based materials have traditionally been used as high-permittivity ceramic capacitor materials, but because the firing temperature is as high as 1300°C,
It was necessary to use expensive metals such as Pi and Pd as internal electrode materials.
これに対し低酸素分圧雰囲気中で焼成できるチタン酸バ
リウム系材料を用い、Ｎｉなどの卑金属材料を内部電極
として使用した積層コンデンサ素子が提案されている。In contrast, a multilayer capacitor element has been proposed that uses a barium titanate material that can be fired in a low oxygen partial pressure atmosphere and uses a base metal material such as Ni as the internal electrode.
（ジャパニーズ ジャーナル オブ アプライド フィ
ジクス サブリメント、２Ｏ−４（１９８１）、Ｐ１４
７〜１５０） （特公昭５６−４９５１５号公報）
一方発明者らはすでに、低酸素分圧雰囲気で焼成でき高
い抵抗率を有する鉛複合ペロブスカイト系の材料（例え
ば特開昭６２−８７４５４号公報、同６２−９６３５７
号公報）と、これを用い鋼または、銅を主成分とする合
金を内部電極とする積層コンデンサ素子（例えば特開昭
６２−２１０６１３号公報）およびその製造方法（例え
ば特開昭６２−１１５８１７号公報、特願昭６２−８９
４０３号）を提案している。(Japanese Journal of Applied Physics Supplement, 2O-4 (1981), P14
7-150) (Japanese Patent Publication No. 56-49515) On the other hand, the inventors have already developed a lead composite perovskite material that can be fired in a low oxygen partial pressure atmosphere and has high resistivity (for example, Japanese Patent Application Laid-Open No. 62-87454, 62-96357
JP-A No. 62-210613), a multilayer capacitor element using the same as an internal electrode made of steel or an alloy containing copper as a main component (for example, JP-A No. 62-210613), and a manufacturing method thereof (for example, JP-A No. 62-115817) Publication, special application 1986-89
No. 403).
発明が解決しようとする課題
鉛複合ペロブスカイト酸化物の固溶体を主成分とする誘
電体磁器層と、鋼または、銅を主成分とする合金からな
る内部電極層を有する積層コンデンサ素子においては、
注意深い焼成過程での酸素分圧制御が必要である。特願
昭６２−８９４０３号に記載したように、低酸素分圧す
ぎると誘電体が還元し低抵抗化するほか、内部電極金属
鋼と析出鉛金属の固溶、低融点化による内部電極の局在
化の問題点があり、高酸素分圧すぎると銅酸化物が生成
し、これが誘電体中へ拡散することによって、誘電体の
低抵抗化が発生する。また、積層コンデンサ素子の製造
工程において、誘電体のセラミックグリーンシート中に
含まれるバインダを焼却飛散する際内部電極層中には銅
酸化物が発生し、その後の還元処理による金属化におい
ても、誘電体の還元とこの銅酸化物を完全になくすこと
の両立は困難であり、銅酸化物の誘電体中への拡散によ
り、素子の低抵抗化が発生していた。Problems to be Solved by the Invention In a multilayer capacitor element having a dielectric ceramic layer mainly composed of a solid solution of lead composite perovskite oxide and an internal electrode layer composed of steel or an alloy mainly composed of copper,
Careful oxygen partial pressure control during the firing process is required. As described in Japanese Patent Application No. 62-89403, if the oxygen partial pressure is too low, the dielectric material will be reduced and the resistance will be lowered. In addition, the internal electrode metal steel and precipitated lead metal will dissolve into solid solution, and the internal electrodes will have a lower melting point. If the oxygen partial pressure is too high, copper oxide is generated and diffuses into the dielectric, resulting in a decrease in the resistance of the dielectric. In addition, in the manufacturing process of multilayer capacitor elements, when the binder contained in the dielectric ceramic green sheet is incinerated and scattered, copper oxide is generated in the internal electrode layer. It is difficult to simultaneously reduce the copper oxide and completely eliminate the copper oxide, and the diffusion of the copper oxide into the dielectric causes a reduction in the resistance of the device.
本発明ではかかる問題点に鑑み、内部電極層からの焼成
過程における誘電体中への鋼酸化物の拡散をおさえ、絶
縁抵抗値が高い積層コンデンサ素子とその製造方法を提
供することを目的とする。In view of these problems, the present invention aims to suppress the diffusion of steel oxide from the internal electrode layer into the dielectric during the firing process, and to provide a multilayer capacitor element with a high insulation resistance value and a method for manufacturing the same. .
課題を解決するための手段 内部電極層中に、ｐｂの酸化物と、Ｎｂ、Ｔａ。Means to solve problems The internal electrode layer contains PB oxide, Nb, and Ta.
およびＷからなる群から選ばれた少なくとも一種の成分
の酸化物と、Ｃｕの酸化物とを含有する構成とする。ま
たこの製造方法として、内部電極を形成する際、銅また
は銅を主成分とする合金となる成分と、ｐｂと、Ｎｂ、
Ｔａ、およびＷからなる群から選ばれた少なくとも一種
の成分の酸化物の混合された電極ペーストを用いる。and W, and an oxide of Cu. In addition, in this manufacturing method, when forming the internal electrodes, copper or an alloy containing copper as a main component, PB, Nb,
An electrode paste containing a mixture of oxides of at least one component selected from the group consisting of Ta and W is used.
作用
上記の構成によれば、鋼または、銅を主成分とする合金
となる成分と、ｐｂと、Ｎｂ、Ｔａ、およびＷからなる
群の成分の少なくとも一つを含む酸化物の混合された電
極ペーストを用い積層コンデンサ素子を焼成したとき、
内部電極層中の鋼酸化物が、上述の酸化物成分と反応し
、内部電極中に残留した構成となり、銅酸化物の誘電体
中への拡散が低減する。これはＰｂと、Ｎｂ、Ｔａ、お
よびＷからなる群の成分の少な（とも一つを含む酸化物
と銅酸化物が近傍にあることおよび反応が選択的に発生
することによる。Effect According to the above configuration, the electrode is a mixture of steel or a component forming an alloy mainly composed of copper, and an oxide containing at least one component of the group consisting of PB, Nb, Ta, and W. When a multilayer capacitor element is fired using the paste,
The steel oxide in the internal electrode layer reacts with the above-mentioned oxide component and remains in the internal electrode, reducing diffusion of the copper oxide into the dielectric. This is due to the fact that the copper oxide and the oxide containing a small amount of the group consisting of Pb, Nb, Ta, and W are located in the vicinity and the reaction occurs selectively.
実施例 誘電体として次に示す組成式で表される材料を用いた。Example A material represented by the following compositional formula was used as the dielectric.
Ａ ： Ｐｂ＋、ｏｏＣａｏ、ｏｓ （Ｍｇ１／５Ｎｂ
ｐ、ｚｓ）ｏ、７ｏＴｉｏ、ｇ。A: Pb+, ooCao, os (Mg1/5Nb
p, zs)o, 7oTio, g.
（Ｎｉ＋７２Ｗ１／ｇ）ｏ、＋ｏｏ ３Ｂ ： Ｐｂ＋
、ｏｏＳｒｏ、ｏｓ （Ｎｉ１／ａＮｂ２／ｓ）ｏ、ａ
ｓＴｉｏ９６（Ｍｇ１／ｇＷ１／２）ｏ、＋ｏｏ ３誘
電体粉末は通常のセラミック製造方法に従い製造した。(Ni+72W1/g) o, +oo 3B: Pb+
,ooSro,os (Ni1/aNb2/s)o,a
sTio96(Mg1/gW1/2)o, +oo 3 dielectric powder was manufactured according to a normal ceramic manufacturing method.
仮焼条件は７５０℃、２時間とした。The calcination conditions were 750°C for 2 hours.
粉砕した仮焼粉末は、仮焼粉末に対し５ ｗ ｔ ’Ｘ
のポリビニルブチラール樹脂と溶剤と共に、ボールミル
で混合しドクターブレードを用いて厚さ３９μｍにシー
ト化した。The pulverized calcined powder has a ratio of 5 wt'X to the calcined powder.
The polyvinyl butyral resin and a solvent were mixed in a ball mill and formed into a sheet with a thickness of 39 μm using a doctor blade.
内部電極に加える酸化物粉末は、次に示す組成式で表さ
れるものを用いた。（モル比）Ｃ：２．５ＰｂＯ１，Ｏ
Ｎｂ２０ｓ
Ｄ ： ２．０ＰｂＯ−１，０Ｗｏ ３Ｅ ：３．
０ＰｂＯ０，５ＷＯ３０，５Ｔａ２０ ｓこれらの酸化
物・粉末は、通常のセラミック製造方法に従い製造した
。仮焼温度は８００℃でおこない、粉砕後の平均粒径は
、０．２５μｍであった。この粉末と、平均粒径０．８
μｍの金属鋼と、平均粒径０．８μｍのＣｕＯ粉末を各
々重量分率で、２０％、４０％、４０％加え、この粉末
に対し５重量％のエチルセルロース樹脂と、適当量の溶
剤と共に三本ロールで混練し電極ペーストとし、スクリ
ーン印刷法を用いシート上に内部電極パターンを印刷し
た。これを電極が左右交互に引き出されるように積層し
切断した。The oxide powder added to the internal electrodes was represented by the following compositional formula. (Mole ratio) C:2.5PbO1,O
Nb20sD: 2.0PbO-1,0Wo3E:3.
0PbO0,5WO30,5Ta20s These oxides/powders were manufactured according to a normal ceramic manufacturing method. The calcination temperature was 800° C., and the average particle size after pulverization was 0.25 μm. This powder and the average particle size of 0.8
20%, 40%, and 40% by weight of CuO powder with an average particle size of 0.8 μm and metal steel of 0.8 μm, respectively. This was kneaded with this roll to form an electrode paste, and an internal electrode pattern was printed on the sheet using a screen printing method. This was laminated so that the electrodes were drawn out alternately on the left and right sides, and then cut.
このようにして作成した積層体は磁器ボート内に粗粒マ
グネシアを敷きその上に載せ空気中４８０℃で６時間バ
インダーをバーンアウトした。The thus-prepared laminate was placed in a porcelain boat on which coarse-grained magnesia was spread, and the binder was burnt out at 480° C. in air for 6 hours.
バーンアウトした試料は、マグネシア磁器容器ちゅうに
入れ、管状電気炉の炉心管内に挿入し、炉心管内をロー
タリーポンプで脱気したのちＮ２−１０％Ｈ２混合ガス
で置換し、混合ガスを流し３００℃まで昇温し１２時間
保持後ガス種を高純度Ｎ２（０２混入率８ｐｐｍ）にか
え、２００℃／ ｈ ｒで９００℃まで昇温し、２時間
保持したのち、降温した。The burned-out sample was placed in a magnesia porcelain container and inserted into the core tube of a tubular electric furnace. After the inside of the furnace core tube was degassed with a rotary pump, it was replaced with a N2-10% H2 mixed gas, and the mixed gas was passed through the furnace at 300°C. The temperature was raised to 900°C at a rate of 200°C/hr, and the temperature was lowered after being held for 12 hours.
積層コンデンサ素子の外形は２．８ｘ１．４ｘ０．９ｎ
ｖａで、有効電極面積は一層当たり１．３１２５＋＋ｌ
ｌｌ１２（１，７５ｘＯ，７５ｍ）、電極層の厚みは３
．５．ｕｍ、誘電体層は一層当たり厚さ３０μｍで、有
効層は１０層、上下に無効層を１０層ずつ設けた。積層
コンデンサ素子は、２０℃で容量、ｔａｎδをＩＶの交
流電圧を印加し１ｋＨｚの周波数で測定した。また抵抗
率は５０Ｖ／鴫の電圧を印加後１分値から求めた。The outer dimensions of the multilayer capacitor element are 2.8x1.4x0.9n
va, the effective electrode area is 1.3125++l per layer
ll12 (1,75xO, 75m), electrode layer thickness is 3
．． 5. Each dielectric layer had a thickness of 30 μm, and there were 10 effective layers and 10 ineffective layers above and below. The capacitance and tan δ of the multilayer capacitor element were measured at 20° C. by applying an IV AC voltage and at a frequency of 1 kHz. Further, the resistivity was determined from the value 1 minute after applying a voltage of 50 V/V.
また、焼成後の素子の破断面内部電極内の酸化物部分の
組成を電子顕微鏡に付設したＸ線蛍光分析計によりもと
めた。Furthermore, the composition of the oxide portion within the internal electrode on the fractured surface of the element after firing was determined using an X-ray fluorescence spectrometer attached to an electron microscope.
第１表に、用いた誘電体の組成、内部電極組成、容量、
ｔａｎδ、抵抗値、（２０個の平均）を示す。Table 1 shows the composition of the dielectric used, the internal electrode composition, the capacity,
tan δ, resistance value, (average of 20 pieces) is shown.
第２表に内部電極部の酸化物の組成を示す。Table 2 shows the composition of the oxide in the internal electrode portion.
（表中、主組成は、重量％で約５％以上のもの、微量組
成は存在は検出されたが、重量％で約５％以下であった
もの。）
第 ２ 表
＊印は本発明の範囲外の比較例
第１表、第２表より明らかなように、内部電極層中に、
Ｐｂと、Ｎｂ、Ｔａ、およびＷからなる群の成分の少な
（とも一つとＣｕを含む酸化物を含む構成とし、この製
造方法として、内部電極を形成する際、鋼または、銅を
主成分とする合金となる成分と、ｐｂと、Ｎｂ、Ｔａ、
およびＷからなる群の成分の少なくとも一つを含む酸化
物の混合された、電極ペーストを用いたものは、内部電
極中に、酸化物を含まないものにくらべ、素子の抵抗値
が向上する。(In the table, the main composition is about 5% or more by weight, and the minor composition is about 5% or less by weight, although the presence was detected.) Comparative Examples Outside the Range As is clear from Tables 1 and 2, in the internal electrode layer,
The structure includes Pb, a small amount of the group consisting of Nb, Ta, and W, and an oxide containing Cu, and in this manufacturing method, when forming the internal electrode, steel or copper is the main component. The components that become the alloy, pb, Nb, Ta,
When using an electrode paste containing a mixture of oxides containing at least one of the components of the group consisting of and W, the resistance value of the element is improved compared to when no oxide is included in the internal electrodes.
発明の効果
本発明のによれば、銅酸化物の誘電体中への拡散をおさ
えることにより抵抗値が大きい工業的に有用な積層コン
デンサ素子を提供するこきができる。Effects of the Invention According to the present invention, it is possible to provide an industrially useful multilayer capacitor element having a high resistance value by suppressing the diffusion of copper oxide into a dielectric material.
Claims (2)
３，Ｐｂ（Ｎｉ＿１＿／＿３Ｎｂ＿２＿／＿３）Ｏ＿３
，ＰｂＴｉＯ＿３，Ｐｂ（Ｍｇ＿１＿／＿２Ｗ＿１＿／
＿２）Ｏ＿３，Ｐｂ（Ｎｉ＿１＿／＿２Ｎｂ＿１＿／＿
２）Ｏ＿３などの鉛複合ペロブスカイト酸化物の固溶体
を主成分とする誘電体磁器層と、銅を主成分とする内部
電極層を有する積層コンデンサ素子において、前記内部
電極層中に、Ｐｂの酸化物と、Ｎｂ，Ｔａ，およびＷか
らなる群から選ばれた少なくとも一種の成分の酸化物と
、Ｃｕの酸化物とを含有することを特徴とする積層コン
デンサ素子。(1) Pb(Mg_1_/_3Nb_2_/_3)O_
3, Pb(Ni_1_/_3Nb_2_/_3)O_3
, PbTiO_3, Pb(Mg_1_/_2W_1_/
_2) O_3, Pb(Ni_1_/_2Nb_1_/_
2) In a multilayer capacitor element having a dielectric ceramic layer mainly composed of a solid solution of lead composite perovskite oxide such as O_3, and an internal electrode layer mainly composed of copper, an oxide of Pb is contained in the internal electrode layer. , an oxide of at least one component selected from the group consisting of Nb, Ta, and W, and an oxide of Cu.
３，Ｐｂ（Ｎｉ＿１＿／＿３Ｎｂ＿２＿／＿３）Ｏ＿３
，ＰｂＴｉＯ＿３，Ｐｂ（Ｍｇ＿１＿／＿２Ｗｂ＿１＿
／＿２）Ｏ＿３，Ｐｂ（Ｎｉ＿１＿／＿２Ｎｂ＿１＿／
＿２）Ｏ＿３などの鉛複合ペロブスカイト酸化物の固溶
体を主成分とする誘電体磁器層と、銅を主成分とする内
部電極層を有する積層コンデンサ素子の製造方法におい
て、前記内部電極を形成する際、銅もしくは銅を主成分
とする合金となる成分と、Ｐｂの酸化物と、Ｎｂ，Ｔａ
，およびＷからなる群から選ばれた少なくとも一種の成
分の酸化物の混合された電極ペーストを用いることを特
徴とする積層コンデンサ素子の製造方法。(2) Pb(Mg_1_/_3Nb_2_/_3)O_
3, Pb(Ni_1_/_3Nb_2_/_3)O_3
, PbTiO_3, Pb(Mg_1_/_2Wb_1_
/_2)O_3,Pb(Ni_1_/_2Nb_1_/
_2) In a method for manufacturing a multilayer capacitor element having a dielectric ceramic layer mainly composed of a solid solution of lead composite perovskite oxide such as O_3 and an internal electrode layer mainly composed of copper, when forming the internal electrode, Ingredients that form copper or a copper-based alloy, Pb oxide, Nb, Ta
, and W. , and W. , and W. , and W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21306888A JPH0262023A (en) | 1988-08-26 | 1988-08-26 | Laminated capacitor element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21306888A JPH0262023A (en) | 1988-08-26 | 1988-08-26 | Laminated capacitor element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0262023A true JPH0262023A (en) | 1990-03-01 |
Family
ID=16633006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21306888A Pending JPH0262023A (en) | 1988-08-26 | 1988-08-26 | Laminated capacitor element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0262023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9390857B2 (en) * | 2008-09-30 | 2016-07-12 | General Electric Company | Film capacitor |
-
1988
- 1988-08-26 JP JP21306888A patent/JPH0262023A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9390857B2 (en) * | 2008-09-30 | 2016-07-12 | General Electric Company | Film capacitor |
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