JPH0260177A - Superconductive transistor - Google Patents
Superconductive transistorInfo
- Publication number
- JPH0260177A JPH0260177A JP63212838A JP21283888A JPH0260177A JP H0260177 A JPH0260177 A JP H0260177A JP 63212838 A JP63212838 A JP 63212838A JP 21283888 A JP21283888 A JP 21283888A JP H0260177 A JPH0260177 A JP H0260177A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- central part
- drain
- source
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 claims abstract description 27
- 230000004907 flux Effects 0.000 claims abstract description 18
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000005642 Aharonov-Bohm effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910014454 Ca-Cu Inorganic materials 0.000 description 1
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は超伝導の特性をもつ高速のトランジスタの構成
に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to the construction of a high-speed transistor having superconducting properties.
〈従来の技術〉
従来は、電流や電圧のスイッチング素子としてSiやG
aAsなどの半導体を用いたトランジスタ。<Conventional technology> Conventionally, Si and G were used as current and voltage switching elements.
A transistor using a semiconductor such as aAs.
超伝導特性を用いるジョセフソン素子があり、又超伝導
体と常伝導の半導体を組み合わせた超伝導トランジスタ
などの開発も行なわれている。There are Josephson devices that use superconducting properties, and superconducting transistors that combine superconductors and normal semiconductors are also being developed.
〈発明が解決しようとする問題点〉
半導体のトランジスタは、常伝導の半導体が必ず電気抵
抗(R)をもつことと、その接合により、又は、絶縁膜
を介在させた構成により容量(C)をもつことからRC
による伝達の遅延があり高速化がさまたげられていた。<Problems to be solved by the invention> Semiconductor transistors are characterized by the fact that normally conductive semiconductors always have electrical resistance (R), and that the capacitance (C) can be increased by their junction or by the structure with an insulating film interposed. Motsukotokara RC
There was a delay in transmission due to this, which hindered speeding up.
高速動作が可能なジョセフソン素子も、超伝導体に介在
させる数1OAの絶縁膜の作製に極めて高度な技術を要
すること、その取扱も簡単でなく、出力レベルも低いと
いう欠点があった。Josephson devices capable of high-speed operation also have the drawbacks of requiring extremely advanced technology to fabricate an insulating film of several 1 OA that is interposed in a superconductor, that they are not easy to handle, and that their output level is low.
超伝導体と常伝導体の半導体を組み合わせたトランジス
タは種々の構成が考えられているが、超伝導体中でのジ
ョセフソン接合の作製と、超伝導体と半導体との接合作
製が難しいこと、及び、超微細加工が必要なことなどが
実用化を妨げていた。Various configurations have been considered for transistors that combine superconductors and normal conductor semiconductors, but it is difficult to create a Josephson junction in a superconductor and a junction between a superconductor and a semiconductor. In addition, the need for ultra-fine processing has hindered its practical application.
本発明は、従来の超伝導トランジスタなどのスイッチン
グ素子がもつ以上のような問題点を解消する超伝導トラ
ンジスタを提供することを目的としている。An object of the present invention is to provide a superconducting transistor that solves the above-mentioned problems of conventional switching elements such as superconducting transistors.
く問題点を解決するための手段〉
本発明の超伝導トランジスタは、超伝導体の電気抵抗が
零の特性を利用した高速のトランジスタであるが、1つ
超電導体の対向する位置にソースとドレイン電極を設け
、そのソースとドレインの間に超伝導体を貫通し、かつ
、超伝導体と絶縁した非超伝導体の中央部と、その中央
部の磁束密度を増減するコイルなどの制御手段をもたせ
た構成である。Means for Solving the Problems> The superconducting transistor of the present invention is a high-speed transistor that takes advantage of the zero electrical resistance property of a superconductor. An electrode is provided between the source and drain of the superconductor, and the central part of the non-superconductor is insulated from the superconductor, and a control means such as a coil that increases or decreases the magnetic flux density in the central part is provided. It has a long structure.
く作 用〉
以上の構成の超伝導トランジスタに於て、ソースとドレ
インへ外部電源を接続し、かつ、その中央部に設けた非
超伝導体部の磁束密度を変化させると、その中央部によ
って分流され超伝導部を流れる電流は、アハラノフ・ボ
ーム効果によって中央部の磁束による磁場ポテンシャル
の干渉作用をうけ、ソースとドレイン間を流れる電流は
、その中央部の磁束密度の一定の増加毎に周期的な増加
と減少を繰り返すので、制御用のコイルで発生する磁束
を、ソースとドレイン間を流れる電流が最大値と最小値
になる磁束の間で制御すれば磁束に応じて電流も変化で
きて超伝導体トランジスタの動作をさせることができる
。In the superconducting transistor with the above configuration, when an external power source is connected to the source and drain and the magnetic flux density of the non-superconducting part provided in the center is changed, the central part The shunted current flowing through the superconducting part is subject to the interference effect of the magnetic field potential due to the magnetic flux in the center due to the Ahranov-Bohm effect, and the current flowing between the source and drain has a periodicity every time the magnetic flux density in the center increases. Therefore, if the magnetic flux generated in the control coil is controlled between the maximum and minimum values of the current flowing between the source and drain, the current can change according to the magnetic flux, resulting in a super It can operate as a conductor transistor.
以上の動作を示したのが第2図で、非超電導体からなる
中央部で分流された2つの超伝導電子流の波動関数をそ
れぞれ中1 、φ2とし、ドレインでの超電導電子流の
波動関数をLpとし、その中央部を貫通する磁束をΦと
すると、超伝導体回路を流れる超伝導電子流は次の式で
表される状態になるO
hはブランク定数、eは電子の電荷、Cは光速。The above operation is shown in Figure 2, where the wave functions of the two superconducting electron streams separated at the central part made of non-superconducting material are denoted by 1 and φ2, respectively, and the wave function of the superconducting electron stream at the drain is Let Lp be Lp, and the magnetic flux penetrating the central part be Φ, then the superconducting electron flow flowing through the superconductor circuit will be in a state expressed by the following formula: Oh is the blank constant, e is the electron charge, and C is the speed of light.
Re は実部記号、*はエルシート共役記号である。Re is the real part symbol, and * is the el sheet conjugate symbol.
上記の式から、コイルで制御した磁束Φによりドレイン
電流を変えることができ、この特性から従来のトランジ
スタと同様な使い方ができることが分る。From the above equation, we can see that the drain current can be changed by the magnetic flux Φ controlled by the coil, and from this characteristic it can be used in the same way as a conventional transistor.
〈実施例〉 本発明の実施例を、図面を参照して説明する。<Example> Embodiments of the present invention will be described with reference to the drawings.
第1図は、本発明の1実施例の斜視図であり、安定化ジ
ルコニア(YSZ )の基板7の上にスパッタリング法
によりYx B a2Cu30y−y(0<、5<+
)のセラミック超伝導体の薄膜lを形成し、その薄膜1
の上にアルミナの絶縁膜4を形成し、続いてホトリソグ
ラフとエツチングにより中央部5になる部分の超伝導膜
を除去し、その穴にアルミナをCVD法によって充填し
た。更に、引続いて絶縁膜4の上に超伝導膜の成長とホ
トリソグラフ及びエツチングにより超伝導体のコイル6
を形成した上、絶縁膜4にソース2とドレイン8の開口
部を作り、セラミック超伝導体と密着性のよいTi
を蒸盾して電極を形成し、リード線を銀ペイントで接続
して超伝導トランジスタ8を完成した。FIG. 1 is a perspective view of one embodiment of the present invention, in which Yx Ba2Cu30y-y (0<, 5<+
) is formed, and the thin film 1 is
An insulating film 4 of alumina was formed thereon, and then the superconducting film in the portion that would become the central portion 5 was removed by photolithography and etching, and the hole was filled with alumina by the CVD method. Furthermore, a superconducting coil 6 is formed on the insulating film 4 by growing a superconducting film, photolithography and etching.
After forming Ti, which has good adhesion to the ceramic superconductor, openings for the source 2 and drain 8 are made in the insulating film 4.
A superconducting transistor 8 was completed by vaporizing the material to form electrodes and connecting lead wires with silver paint.
作製した超伝導トランジスタをその超伝導体部の臨界温
度Tc 以下に冷却し、そのソース−ドレイン間の電流
は、その超伝導体膜1の臨界電流Jc以下で動作できる
程度にし、コイル6によって中央部5の磁束を変化させ
ると、その磁束密度の増加と共に一定の周期で、ドレイ
ン電流が増減するのが測定できた。これは、磁束を減少
させるときも、増加のときと同じように周期的なドレイ
ン電流の増減が測定できた。The fabricated superconducting transistor is cooled to below the critical temperature Tc of its superconductor portion, the current between its source and drain is set to such an extent that it can operate below the critical current Jc of the superconductor film 1, and the coil 6 is connected to the central When the magnetic flux of part 5 was changed, it was possible to measure that the drain current increased and decreased at a constant period as the magnetic flux density increased. This means that when the magnetic flux is decreased, periodic increases and decreases in the drain current can be measured in the same way as when the magnetic flux is increased.
以上、本発明を実施例に従って説明したが、本発明は、
実施例に限定されるものでなく、超電導体もB i −
8r −Ca−Cu−0系やT7?−Ba−Ca−Cu
−0系などのセラミック超伝導体、父はPb。The present invention has been described above according to examples, but the present invention
Not limited to the examples, superconductors may also be B i −
8r -Ca-Cu-0 series or T7? -Ba-Ca-Cu
Ceramic superconductors such as -0 series, the father is Pb.
Tc などの元素超伝導体や、Nb3Ge 、 Nb3
Gaなどの化合物超伝導体でもよく、基板もSrTiO
3゜A l t 03などを使用することも可能であシ
、超伝導トランジスタ8の形状も本発明の動作を行なう
範囲で任意に変形しても発明の効果を得ることができる
。Elemental superconductors such as Tc, Nb3Ge, Nb3
A compound superconductor such as Ga may be used, and the substrate may also be SrTiO.
3° Al t 03 or the like may be used, and the effects of the invention can be obtained even if the shape of the superconducting transistor 8 is arbitrarily modified within the scope of the operation of the invention.
〈発明の効果〉
超伝導電子を制御する高速動作のトランジスタを、アハ
ラノフ・ボーム効果による磁束での制御を利用すること
により、特別な技術を用いることなく作製することがで
き、その使用も簡単になった0<Effects of the invention> A high-speed operation transistor that controls superconducting electrons can be manufactured without using special technology by using magnetic flux control by the Ahranov-Bohm effect, and its use is also easy. It became 0
@1図は本発明の超伝導トランジスタの実施例の斜視図
、第2図は本発明の超伝導トランジスタの動作原理を説
明するための図である。
!・・・超伝導体、 2・・・ソース、 3・・・ドレ
イン。
4・・・絶縁膜、 5・・・中央部、 6・・・コイル
。
7・・・基板。
代理人 弁理士 杉 山 毅 至(他1名)第2 図@ Figure 1 is a perspective view of an embodiment of the superconducting transistor of the present invention, and Figure 2 is a diagram for explaining the operating principle of the superconducting transistor of the present invention. ! ...superconductor, 2...source, 3...drain. 4... Insulating film, 5... Central part, 6... Coil. 7... Board. Agent Patent attorney Takeshi Sugiyama (and 1 other person) Figure 2
Claims (1)
超伝体の部分を設けた環状超伝導体に、前記中心部をは
さんで、ソースとドレイン電極と、前記中央部の磁束を
制御する手段とを設けたことを特徴とする超伝導トラン
ジスタ。 2、前記中央部の磁束を制御する手段が、超伝導体で形
成したコイルからなることを特徴とする請求項1記載の
超伝導トランジスタ。[Claims] 1. A ring-shaped superconductor having a non-superconducting part formed at least around the center with an insulating film, with source and drain electrodes sandwiching the center part; A superconducting transistor characterized in that it is provided with means for controlling magnetic flux in a central portion. 2. The superconducting transistor according to claim 1, wherein the means for controlling the magnetic flux in the central portion comprises a coil formed of a superconductor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63212838A JPH0724314B2 (en) | 1988-08-25 | 1988-08-25 | Superconducting transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63212838A JPH0724314B2 (en) | 1988-08-25 | 1988-08-25 | Superconducting transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0260177A true JPH0260177A (en) | 1990-02-28 |
JPH0724314B2 JPH0724314B2 (en) | 1995-03-15 |
Family
ID=16629185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63212838A Expired - Fee Related JPH0724314B2 (en) | 1988-08-25 | 1988-08-25 | Superconducting transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0724314B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8735031B2 (en) | 2008-12-01 | 2014-05-27 | Fuji Electric Co., Ltd. | Electrophotographic photoreceptor, process for producing the electrophotographic photoreceptor, and electrophotographic device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01146377A (en) * | 1987-12-02 | 1989-06-08 | Sumitomo Electric Ind Ltd | Non-volatile storage device |
JPH01226182A (en) * | 1988-03-07 | 1989-09-08 | Nippon Telegr & Teleph Corp <Ntt> | Electron wave interference device |
-
1988
- 1988-08-25 JP JP63212838A patent/JPH0724314B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01146377A (en) * | 1987-12-02 | 1989-06-08 | Sumitomo Electric Ind Ltd | Non-volatile storage device |
JPH01226182A (en) * | 1988-03-07 | 1989-09-08 | Nippon Telegr & Teleph Corp <Ntt> | Electron wave interference device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8735031B2 (en) | 2008-12-01 | 2014-05-27 | Fuji Electric Co., Ltd. | Electrophotographic photoreceptor, process for producing the electrophotographic photoreceptor, and electrophotographic device |
Also Published As
Publication number | Publication date |
---|---|
JPH0724314B2 (en) | 1995-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |