JPH0260052B2 - - Google Patents
Info
- Publication number
- JPH0260052B2 JPH0260052B2 JP5670984A JP5670984A JPH0260052B2 JP H0260052 B2 JPH0260052 B2 JP H0260052B2 JP 5670984 A JP5670984 A JP 5670984A JP 5670984 A JP5670984 A JP 5670984A JP H0260052 B2 JPH0260052 B2 JP H0260052B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- slider
- boat body
- epitaxial growth
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5670984A JPS60198720A (ja) | 1984-03-22 | 1984-03-22 | 液相エピタキシヤル結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5670984A JPS60198720A (ja) | 1984-03-22 | 1984-03-22 | 液相エピタキシヤル結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60198720A JPS60198720A (ja) | 1985-10-08 |
| JPH0260052B2 true JPH0260052B2 (cs) | 1990-12-14 |
Family
ID=13035002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5670984A Granted JPS60198720A (ja) | 1984-03-22 | 1984-03-22 | 液相エピタキシヤル結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60198720A (cs) |
-
1984
- 1984-03-22 JP JP5670984A patent/JPS60198720A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60198720A (ja) | 1985-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8507370B2 (en) | Method of transferring epitaxial film | |
| US8430056B2 (en) | Apparatus for making epitaxial film | |
| US3940296A (en) | Method for growing epitaxial layers from the liquid phase | |
| JPH0260052B2 (cs) | ||
| CA1160762A (en) | Liquid phase epitaxy method and apparatus | |
| US4574730A (en) | Melt dispensing liquid phase epitaxy boat | |
| USRE28140E (en) | Bergh ctal | |
| JPH043101B2 (cs) | ||
| JPS6359529B2 (cs) | ||
| Lendvay | Ternary AIII Bv antimonides | |
| US3762367A (en) | Growth apparatus for a liquid growth multi-layer film | |
| CA1201220A (en) | Melt dispensing liquid phase epitaxy boat | |
| JPS61261293A (ja) | 液相エピタキシヤル成長用ボ−ト | |
| US4390379A (en) | Elimination of edge growth in liquid phase epitaxy | |
| IE35057B1 (en) | Methods of growing multilayer semiconductor crystals | |
| JPS6273625A (ja) | 液相エピタキシヤル成長装置 | |
| JPH03228897A (ja) | 液相エピタキシー用装置 | |
| RU2064541C1 (ru) | Способ получения гетероструктур на основе полупроводниковых соединений | |
| JPH0538063Y2 (cs) | ||
| JPS61111523A (ja) | 液相エピタキシヤル結晶成長装置 | |
| JPH04149093A (ja) | スライド式液相エピタキシャル成長装置 | |
| JPS6128635B2 (cs) | ||
| JPH0483791A (ja) | 液相エピタキシャル結晶育成法 | |
| JPS587052B2 (ja) | 半導体結晶の液相成長装置 | |
| JPH0310594B2 (cs) |