JPH0260052B2 - - Google Patents

Info

Publication number
JPH0260052B2
JPH0260052B2 JP59056709A JP5670984A JPH0260052B2 JP H0260052 B2 JPH0260052 B2 JP H0260052B2 JP 59056709 A JP59056709 A JP 59056709A JP 5670984 A JP5670984 A JP 5670984A JP H0260052 B2 JPH0260052 B2 JP H0260052B2
Authority
JP
Japan
Prior art keywords
chamber
slider
boat body
epitaxial growth
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59056709A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60198720A (ja
Inventor
Takao Oda
Mari Kato
Kotaro Mitsui
Susumu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59056709A priority Critical patent/JPS60198720A/ja
Publication of JPS60198720A publication Critical patent/JPS60198720A/ja
Publication of JPH0260052B2 publication Critical patent/JPH0260052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/263—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59056709A 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置 Granted JPS60198720A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59056709A JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59056709A JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Publications (2)

Publication Number Publication Date
JPS60198720A JPS60198720A (ja) 1985-10-08
JPH0260052B2 true JPH0260052B2 (Direct) 1990-12-14

Family

ID=13035002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59056709A Granted JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Country Status (1)

Country Link
JP (1) JPS60198720A (Direct)

Also Published As

Publication number Publication date
JPS60198720A (ja) 1985-10-08

Similar Documents

Publication Publication Date Title
US20100105194A1 (en) Method of Integrating Epitaxial Film onto Assembly Substrate
US3940296A (en) Method for growing epitaxial layers from the liquid phase
JPH0260052B2 (Direct)
US3853643A (en) Epitaxial growth of group iii-v semiconductors from solution
CA1160762A (en) Liquid phase epitaxy method and apparatus
US4574730A (en) Melt dispensing liquid phase epitaxy boat
USRE28140E (en) Bergh ctal
JPH043101B2 (Direct)
US3933123A (en) Liquid phase epitaxy
JPS6359529B2 (Direct)
JPS626337B2 (Direct)
CA1201220A (en) Melt dispensing liquid phase epitaxy boat
JPS61261293A (ja) 液相エピタキシヤル成長用ボ−ト
IE35057B1 (en) Methods of growing multilayer semiconductor crystals
Dawson Liquid phase epitaxy (LPE) techniques for compound semiconductor growth
JPH03228897A (ja) 液相エピタキシー用装置
RU2064541C1 (ru) Способ получения гетероструктур на основе полупроводниковых соединений
JPH0538063Y2 (Direct)
JPH04149093A (ja) スライド式液相エピタキシャル成長装置
JPS6128635B2 (Direct)
JPS62292693A (ja) 液相エピタキシャル成長方法
JPH0483791A (ja) 液相エピタキシャル結晶育成法
JPS63112494A (ja) 液相エピタキシヤル成長方法
JPS59164693A (ja) 液相エピタキシヤル成長装置
JPS587052B2 (ja) 半導体結晶の液相成長装置