JPH0257739B2 - - Google Patents
Info
- Publication number
- JPH0257739B2 JPH0257739B2 JP58129049A JP12904983A JPH0257739B2 JP H0257739 B2 JPH0257739 B2 JP H0257739B2 JP 58129049 A JP58129049 A JP 58129049A JP 12904983 A JP12904983 A JP 12904983A JP H0257739 B2 JPH0257739 B2 JP H0257739B2
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- voltage
- reverse bias
- photodetection
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 description 26
- 238000005259 measurement Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
- H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Communication System (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58129049A JPS6020654A (ja) | 1983-07-15 | 1983-07-15 | 光検出回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58129049A JPS6020654A (ja) | 1983-07-15 | 1983-07-15 | 光検出回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6020654A JPS6020654A (ja) | 1985-02-01 |
JPH0257739B2 true JPH0257739B2 (zh) | 1990-12-05 |
Family
ID=14999818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58129049A Granted JPS6020654A (ja) | 1983-07-15 | 1983-07-15 | 光検出回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6020654A (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6181677A (ja) * | 1984-09-28 | 1986-04-25 | Fujitsu Ltd | 受光装置 |
EP0226853B1 (de) * | 1985-12-16 | 1992-04-22 | Siemens Aktiengesellschaft | Optischer Empfänger |
US4889985A (en) * | 1988-10-26 | 1989-12-26 | Tektronix, Inc. | Combined optical power meter and receiver |
NL8802661A (nl) * | 1988-10-31 | 1990-05-16 | Philips Nv | Afstandsbedieningsontvanger met energie teruglevering aan batterij. |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107654A (en) * | 1980-01-31 | 1981-08-26 | Nec Corp | Light receiving circuit |
JPS5854744A (ja) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | 光線受信回路 |
-
1983
- 1983-07-15 JP JP58129049A patent/JPS6020654A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107654A (en) * | 1980-01-31 | 1981-08-26 | Nec Corp | Light receiving circuit |
JPS5854744A (ja) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | 光線受信回路 |
Also Published As
Publication number | Publication date |
---|---|
JPS6020654A (ja) | 1985-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3992622A (en) | Logarithmic amplifier with temperature compensation means | |
US4349777A (en) | Variable current source | |
US2897720A (en) | Light meter | |
JPH0257740B2 (zh) | ||
JPH0257739B2 (zh) | ||
US4681441A (en) | Light measuring device | |
JP2928814B2 (ja) | 測定装置 | |
Chandrakanta et al. | The non-uniform characteristics of a photodiode | |
US4864120A (en) | Electronic correction of photodiode radiant sensitivity | |
JPS5845523A (ja) | 測光回路 | |
JPS639167B2 (zh) | ||
CN117969928B (zh) | 一种平方电路和均方根检波器 | |
JPH0623948Y2 (ja) | 光パワーメータ | |
Joardar et al. | A High Gain Amplifier Circuit for Selenium Photo Cells | |
SU1176290A1 (ru) | Экспонометрический прибор | |
JPS592513Y2 (ja) | 分光光度計の測光回路 | |
SU596975A1 (ru) | Оптоэлектронное вычислительное устройство | |
JPH03216523A (ja) | 測光回路 | |
JPH01216606A (ja) | 受光回路のレンジ切り換え回路 | |
JPH051791Y2 (zh) | ||
JPH09107122A (ja) | 光検出器 | |
SU1492226A1 (ru) | Фотоприемное устройство | |
JPS59116054A (ja) | デジタルマルチメ−タ | |
SU1627861A1 (ru) | Фотоприемное устройство | |
JPS6156446B2 (zh) |