JPH0254502A - Nonlinear-to-voltage resistor - Google Patents
Nonlinear-to-voltage resistorInfo
- Publication number
- JPH0254502A JPH0254502A JP63203920A JP20392088A JPH0254502A JP H0254502 A JPH0254502 A JP H0254502A JP 63203920 A JP63203920 A JP 63203920A JP 20392088 A JP20392088 A JP 20392088A JP H0254502 A JPH0254502 A JP H0254502A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- phase
- beta
- resistor
- delta
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000011787 zinc oxide Substances 0.000 claims abstract description 10
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 9
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000654 additive Substances 0.000 claims abstract description 5
- 229910000410 antimony oxide Inorganic materials 0.000 claims abstract description 4
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- 230000000996 additive effect Effects 0.000 claims abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000011268 mixed slurry Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- -1 First Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010813 internal standard method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は酸化亜鉛を主成分とする電圧非直線抵抗体に関
するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a voltage nonlinear resistor containing zinc oxide as a main component.
(従来の技術)
従来から酸化亜鉛を主成分としBi、O,、Sb、0.
。(Prior Art) Conventionally, zinc oxide is the main component, and Bi, O, Sb, 0.
.
5in2. Co20.、 MnO□等の少量の添加物
を含有した抵抗体は、優れた電圧非直線性を示すことが
広く知られており、その性質を利用して避雷器等に使用
されている。5in2. Co20. It is widely known that resistors containing small amounts of additives such as , MnO□, etc. exhibit excellent voltage nonlinearity, and are used in lightning arresters and the like by taking advantage of this property.
特に避雷器として使用した場合、落雷により過大な電流
が流れても、その電流を通常は絶縁体であり所定電圧よ
りも過大な電圧が印加されると導体となる電圧非直線抵
抗体により接地するため、落雷による事故を防止するこ
とができる。In particular, when used as a lightning arrester, even if an excessive current flows due to a lightning strike, the current is grounded by a voltage nonlinear resistor that is normally an insulator and becomes a conductor when a voltage higher than the specified voltage is applied. , accidents caused by lightning can be prevented.
(発明が解決しようとする課題)
この電圧非直線抵抗体の結晶相として、酸化亜鉛の結晶
相のほか粒界層としてα型、β型、γ型、δ型の各ビス
マス層やパイロクロア相等が存在するが、その量比によ
ってはサージ印加後のVISA変化率が大きくなったり
、V−1特性の温度に対する変化率が大きくなって、い
ずれの場合も多重雷に対しての特性が劣化することがあ
った。また、このようにVlaA変化率が大きいと、ギ
ャップレス避雷器では熱暴走の危険性が、またギャップ
付避雷器では続流遮断が不可能になる問題もあった。(Problem to be Solved by the Invention) In addition to the zinc oxide crystal phase, the voltage nonlinear resistor includes α-type, β-type, γ-type, and δ-type bismuth layers and pyrochlore phases as grain boundary layers. However, depending on the quantity ratio, the rate of change in VISA after applying a surge may become large, or the rate of change of V-1 characteristics with respect to temperature may become large, and in either case, the characteristics against multiple lightning may deteriorate. was there. Furthermore, when the rate of change in VlaA is large as described above, there is a problem that there is a risk of thermal runaway in a gapless arrester, and that it becomes impossible to interrupt a follow-up current in a surge arrester with a gap.
本発明の目的は上述した課題を解消して、多重雷に対し
ても良好な特性を示す電圧非直線抵抗体を提供しようと
するものである。An object of the present invention is to solve the above-mentioned problems and provide a voltage nonlinear resistor that exhibits good characteristics even against multiple lightning strikes.
(課題を解決するための手段)
本発明の電圧非直線抵抗体は、酸化亜鉛を主成分とし、
酸化ビスマス、酸化アンチモン、酸化ケイ素等の金属酸
化物を添加成分として含む電圧非直線抵抗体において、
酸化ビスマスの結晶相が少なくともβ型、δ型の2種類
の結晶相を含むとともに、β型およびδ型の各結晶量を
βおよびδとしたとき、
の関係を満たすことを特徴とするものである。(Means for Solving the Problems) The voltage nonlinear resistor of the present invention contains zinc oxide as a main component,
In voltage nonlinear resistors containing metal oxides such as bismuth oxide, antimony oxide, and silicon oxide as additive components,
It is characterized in that the crystal phase of bismuth oxide contains at least two types of crystal phases, β-type and δ-type, and satisfies the following relationship, where the amounts of β-type and δ-type crystals are β and δ. be.
(作 用)
上述した構成において、抵抗体中の酸化ビスマスの結晶
相が少なくとも所定量比のβ型およびδ型の結晶相を含
む電圧非直線抵抗体が、後述する実施例から明らかなよ
うに、サージ印加後のVISA変化率が小であるととも
に、V−1特性の温度に対する変化率が小さいことを見
出したことによる。(Function) In the above-mentioned configuration, the voltage nonlinear resistor in which the crystal phase of bismuth oxide in the resistor includes at least a predetermined ratio of β-type and δ-type crystal phases, as will be clear from the examples described later, is provided. This is based on the discovery that the rate of change in VISA after application of a surge is small, and the rate of change in V-1 characteristics with respect to temperature is small.
その結果、サージ耐量が良好で多重雷に対し゛C良好で
あるとともに、熱暴走せず寿命も良好な電圧非直線抵抗
体を得ることができる。As a result, it is possible to obtain a voltage nonlinear resistor that has good surge resistance and good C resistance against multiple lightning strikes, and also has a good lifespan without thermal runaway.
ここで、各相の効果について説明すると、δ相は主に雷
サージ印加後におけるVl+aA変化率を減少させる効
果がありまたサージ耐量を良好にする効果もある。β相
は主にV−1特性の温度に対する変化率を減少させる効
果があり、δ相との共存でさらに効果を向上させること
ができる。ただ、β相のみでは寿命が悪化するため好ま
しくない。また、T相は寿命は良好になるが他の上記特
性に対しては悪影響を及ぼすため、多くてもQ、5wt
%以下であると好ましい。また、パイロクロア相は含有
しない方が好ましい。Here, to explain the effects of each phase, the δ phase mainly has the effect of reducing the rate of change in Vl+aA after application of a lightning surge, and also has the effect of improving surge resistance. The β phase mainly has the effect of reducing the rate of change of the V-1 characteristic with respect to temperature, and its coexistence with the δ phase can further improve the effect. However, using only the β phase is not preferable because the life will deteriorate. In addition, although the T phase has a good lifespan, it has a negative effect on the other above characteristics, so at most Q, 5 wt.
% or less. Moreover, it is preferable not to contain a pyrochlore phase.
さらに、製造工程中ガラスフリットを0.01〜0゜Q
3wt%添加する。また、酸化ケイ素を非晶質で添加す
ると粒界層が安定化するため好ましい。Furthermore, during the manufacturing process, glass frit is added at 0.01~0°Q.
Add 3wt%. Further, it is preferable to add silicon oxide in an amorphous form because it stabilizes the grain boundary layer.
なお、βとδの関係は70≦β/(β+δ)×100≦
80であると、さらに本発明の効果が顕著になるため好
ましい。The relationship between β and δ is 70≦β/(β+δ)×100≦
A value of 80 is preferable because the effects of the present invention become even more pronounced.
(実施例)
酸化亜鉛を主成分とする電圧非直線抵抗体を得るには、
まず所定の粒度に調整した酸化亜鉛原料と所定の粒度に
調整した酸化ビスマス、酸化コバルト、酸化マンガン、
酸化アンチモン、酸化クロム、好ましくは非晶質の酸化
ケイ素、酸化ニッケノベ酸化ホウ累、酸化銀等よりなる
添加物の所定量を混合する。なお、この場合酸化銀、酸
化ホウ素の代わりに硝酸銀、ホウ酸を用いてもよい。好
ましくは銀を含むホウケイ酸ビスマスガラスを用いると
よい。この際、これらの原料粉末に対して所定量のポリ
ビニルアルコール水溶液等を加える。(Example) To obtain a voltage nonlinear resistor whose main component is zinc oxide,
First, zinc oxide raw material adjusted to a predetermined particle size, bismuth oxide, cobalt oxide, manganese oxide, adjusted to a predetermined particle size,
A predetermined amount of additives such as antimony oxide, chromium oxide, preferably amorphous silicon oxide, nickel oxide, borium oxide, silver oxide, etc. are mixed. In this case, silver nitrate or boric acid may be used instead of silver oxide or boron oxide. Preferably, bismuth borosilicate glass containing silver is used. At this time, a predetermined amount of polyvinyl alcohol aqueous solution or the like is added to these raw material powders.
また好ましくは酸化アルミニウム源として硝酸アルミニ
ウム溶液の所定量を添加する。この混合操作は好ましく
は乳化機を用いる。Preferably, a predetermined amount of aluminum nitrate solution is added as a source of aluminum oxide. This mixing operation preferably uses an emulsifying machine.
次に好ましくは200mmHg以下の真空度で減圧脱気
を行い混合泥漿を得る。ここに混合泥漿の水分量は30
〜35wt%程度に、またその混合泥漿の粘度は100
±5ocpとするのが好ましい。次に得られた混合泥漿
を噴霧乾燥装置に供給して平均粒径50〜150μm1
好ましくは80〜120μmで、水分量が0.5〜2.
Qwt%、より好ましくは0,9〜1.5wt%の造粒
粉を造粒する。次に得られた造粒粉を、成形工程におい
て、成形圧力800〜1000kg/cm2の下で所定
の形状に成形する。そしてその成形体を昇降温速度50
〜70℃/hrで800〜1000℃、保持時間1〜5
時間という条件で焼成する。なお、仮焼成の前に成形体
を昇降温速度10〜100℃/hrで400〜600℃
、保持時間1〜10時間で結合剤を飛散除去することが
好ましい。Next, deaeration is performed under reduced pressure, preferably at a vacuum level of 200 mmHg or less, to obtain a mixed slurry. Here, the water content of the mixed slurry is 30
~35wt%, and the viscosity of the mixed slurry is 100%.
It is preferable to set it to ±5ocp. Next, the obtained mixed slurry was fed to a spray dryer and the average particle size was 50 to 150 μm1.
Preferably, the diameter is 80 to 120 μm and the water content is 0.5 to 2.
Qwt%, more preferably 0.9 to 1.5 wt% granulated powder is granulated. Next, the obtained granulated powder is molded into a predetermined shape under a molding pressure of 800 to 1000 kg/cm 2 in a molding step. Then, the molded body is heated and cooled at a rate of 50
800-1000℃ at ~70℃/hr, holding time 1-5
Fired under the condition of time. In addition, before calcining, the molded body was heated to 400 to 600°C at a heating/cooling rate of 10 to 100°C/hr.
It is preferable to scatter and remove the binder for a holding time of 1 to 10 hours.
次に、仮焼成した仮焼体の側面に絶縁被覆層を形成する
。本願発明では、Bi、03.5b203. ZnO。Next, an insulating coating layer is formed on the side surface of the calcined body. In the present invention, Bi, 03.5b203. ZnO.
S10□等の所定量に有機結合剤としてエチルセルロー
ス、プチルカルビトーノベ酢酸nブチル等を加えた酸化
物ペーストを、60〜300μmの厚さに仮焼体の側面
に塗布する。次に、これを昇降温速度20〜60℃/h
r、 1000〜1300℃好ましくは1100〜12
50℃、3〜7時間という条件で本焼成する。なお、ガ
ラス粉末に有機結合剤としてエチルセルロース、ブチル
カルピトール、酢酸nブチル等を加えたガラスペースト
を前記の絶縁被覆層上に100〜300μmの厚さに塗
布し、空気中で昇降温速度50〜200℃/ h r、
400〜900℃保持時間0.5〜2時間という条件で
熱処理することによりガラス層を形成すると好ましい。An oxide paste prepared by adding an organic binder such as ethyl cellulose or n-butyl carbitone acetate to a predetermined amount of S10□ or the like is applied to the side surface of the calcined body to a thickness of 60 to 300 μm. Next, this is heated at a rate of 20 to 60°C/h.
r, 1000-1300°C, preferably 1100-12
Main firing is performed at 50° C. for 3 to 7 hours. A glass paste prepared by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to glass powder is applied to a thickness of 100 to 300 μm on the above-mentioned insulating coating layer, and the temperature is raised and cooled in air at a rate of 50 to 300 μm. 200℃/hr,
It is preferable to form the glass layer by heat treatment at 400-900° C. for 0.5-2 hours.
その後、得られた電圧非直線抵抗体の両端面をS+C,
A ji! 203. ダイヤモンド等の#400〜
2000相当の研磨剤により水好ましくは油を研磨液と
して使用して研磨する。次に、研磨面を洗浄後、研磨し
た両端面に例えばアルミニウムメタリコン等によってメ
タリコン電極を例えば溶射により設けて電圧非直線抵抗
体を得ている。After that, both end faces of the obtained voltage nonlinear resistor are S+C,
A ji! 203. Diamond etc. #400~
Polishing is performed using water, preferably oil, as the polishing liquid with a polishing agent equivalent to 2000 ml. Next, after cleaning the polished surfaces, metallicon electrodes made of aluminum metallicon or the like are provided on both polished end surfaces by, for example, thermal spraying to obtain a voltage nonlinear resistor.
上述した製造方法において、原料の種類及び添加量、本
焼成条件、本焼成冷却速度、本焼成後における熱処理条
件等を種々組合せることにより、焼結体中に少なくとも
所定量のβ−B1203結晶相およびδ−Bi、03結
晶相を含む本発明の電圧非直線抵抗体が製造でき、目的
とするv4え変化率、V−1特性の温度に対する変化率
等の良好な電圧非直線抵抗体が得られるものである。In the above-mentioned manufacturing method, at least a predetermined amount of β-B1203 crystal phase is produced in the sintered body by various combinations of the types and amounts of raw materials, main firing conditions, main firing cooling rate, heat treatment conditions after main firing, etc. and δ-Bi, the voltage nonlinear resistor of the present invention containing the 03 crystal phase can be manufactured, and a voltage nonlinear resistor with good target v4 rate of change, rate of change of V-1 characteristic with respect to temperature, etc. can be obtained. It is something that can be done.
以下、実際に本発明の範囲内および範囲外の電圧非直線
抵抗体において、各種特性を測定した結果について説明
する。Hereinafter, the results of actually measuring various characteristics of voltage nonlinear resistors within and outside the scope of the present invention will be described.
実施例
上述した方法に従って、Bi2O,、Co3O4,Mn
O2゜5b20.e Cr2k を各々0.1〜2,
0 モJL+%、 八β(NO3)3・9H,00,0
01〜0.01モル%、銀を含むホウケイ酸ビスマスガ
ラス0.01〜Q、3wt%、非晶質のSiO□0,5
〜3,0モル%、残部ZnOからなる原料から直径47
mm、厚さ22.5mmの形状の第1表に示す結晶相を
有する本発明試料N011〜7と比較例試料N011〜
3の電圧非直線抵抗体を準備した。EXAMPLE According to the method described above, Bi2O,, Co3O4, Mn
O2゜5b20. e Cr2k each from 0.1 to 2,
0 MoJL+%, 8β(NO3)3・9H,00,0
01-0.01 mol%, bismuth borosilicate glass containing silver 0.01-Q, 3 wt%, amorphous SiO□0.5
~3.0 mol%, balance ZnO from a raw material with a diameter of 47
Invention samples N011-7 and comparative samples N011-7 having crystal phases shown in Table 1 with a shape of 22.5 mm and a thickness of 22.5 mm.
3 voltage nonlinear resistors were prepared.
準備した本発明および比較例の抵抗体に対して、温度特
性、Vl+++A低下率、雷サージ耐1iよび開閉サー
ジ耐量を測定するとともに、課電寿命パターンを求めた
。結果を第1表に示す。ここで、温度特性は、25℃に
おけるVISAおよびV40kAに対する150℃にお
けるVlmAおよびV、。、Aの変化率として求めた。For the prepared resistors of the present invention and comparative examples, temperature characteristics, Vl+++A reduction rate, lightning surge resistance 1i, and switching surge resistance were measured, and the energization life pattern was determined. The results are shown in Table 1. Here, the temperature characteristics are VlmA and V at 150°C with respect to VISA and V40kA at 25°C. , was determined as the rate of change of A.
150℃では25℃と比較してVlmAは低下し、V、
。、は増大する。VIIIA低下率は、30kAの電流
を8720μsの電流波形で10回印加した前後のVl
+aAより求めた。雷サージ耐量は、130kAおよび
150kAの電流を
4710μsの電流波形で2回繰り返し印加した後破壊
したものをX、破壊しなかったものをOと表示した。開
閉サージ耐量は800Aおよび100OAの電流を2m
sの電流波形で20回繰り返し印加した後破壊したもの
をx1破壊しなかったものを0と表示した。さらに、課
電パターンは第1図におけるもれ電流と時間の関係から
求めた。第1図において:Aは最良のもの、Bは暴走せ
ずに戻るため良好なもの、Cは熱暴走するものをそれぞ
れ示している。At 150°C, VlmA decreases compared to 25°C, and V,
. , increases. VIIIA reduction rate is Vl before and after applying 30kA current 10 times with a current waveform of 8720μs.
It was determined from +aA. The lightning surge resistance was indicated as "X" if the product was destroyed after repeated application of 130 kA and 150 kA current twice with a current waveform of 4710 μs, and "O" if it was not destroyed. Opening/closing surge withstand current of 800A and 100OA at 2m
Those that were destroyed after repeated application of the current waveform s for 20 times were indicated as x1. Those that were not destroyed were indicated as 0. Furthermore, the energization pattern was determined from the relationship between leakage current and time shown in FIG. In FIG. 1: A indicates the best one, B indicates a good one because it returns without runaway, and C indicates one that causes thermal runaway.
なお、各結晶相量はX線回折による内部標準法により求
めた。The amount of each crystal phase was determined by an internal standard method using X-ray diffraction.
第1表の結果から、少なくとも所定量比のβ相とδ相と
を含む本発明の抵抗体は、比較例に比べて温度特性およ
びVlaA低下率が良好であるとともに他の緒特性も良
好なことがわかる。From the results in Table 1, it can be seen that the resistor of the present invention, which contains at least a predetermined ratio of β phase and δ phase, has better temperature characteristics and VlaA reduction rate than the comparative example, and also has better other properties. I understand that.
なお、本発明の課電寿命パターンはAではないが熱暴走
する恐れはない。ギャップ付避雷器では素子は常時課電
されているためBでも全く問題とはならない。Note that although the energization life pattern of the present invention is not A, there is no fear of thermal runaway. In the case of a lightning arrester with a gap, the element is always energized, so B does not pose a problem at all.
(発明の効果)
以上の説明から明らかなように、本発明の電圧非直線抵
抗体は、少なくとも所定量比のβ相とδ相とを含有させ
ることにより、雷サージ印加によるVl+++A変化が
小さく電圧−電流特性の温度変化が小さく良好な多重雷
に対する特性を得るとともに、良好なサージ耐量、寿命
等の他の特性も得ることができる。(Effects of the Invention) As is clear from the above explanation, the voltage nonlinear resistor of the present invention contains at least a predetermined ratio of β phase and δ phase, so that the change in Vl+++A due to lightning surge application is small and the voltage is small. - It is possible to obtain good characteristics against multiple lightning with small temperature changes in current characteristics, and also to obtain other characteristics such as good surge resistance and lifespan.
第1図は課電パターンをもれ電流と時間との関係で示す
グラフである。FIG. 1 is a graph showing the energization pattern in terms of the relationship between leakage current and time.
Claims (1)
モン、酸化ケイ素等の金属酸化物を添加成分として含む
電圧非直線抵抗体において、酸化ビスマスの結晶相が少
なくともβ型、δ型の2種類の結晶相を含むとともに、
β型およびδ型の各結晶量をβおよびδとしたとき、 60≦β/β+δ×100≦90 の関係を満たすことを特徴とする電圧非直線抵抗体。1. In a voltage nonlinear resistor that contains zinc oxide as a main component and metal oxides such as bismuth oxide, antimony oxide, and silicon oxide as additive components, bismuth oxide has at least two types of crystal phases: β type and δ type. including,
A voltage nonlinear resistor characterized by satisfying the following relationship: 60≦β/β+δ×100≦90, where the amount of crystals of β type and δ type is β and δ.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63203920A JPH0812806B2 (en) | 1988-08-18 | 1988-08-18 | Voltage nonlinear resistor |
DE68910621T DE68910621T2 (en) | 1988-08-10 | 1989-08-01 | Nonlinear voltage dependent resistors. |
EP89307787A EP0358323B1 (en) | 1988-08-10 | 1989-08-01 | Voltage non-linear type resistors |
US07/389,301 US5039971A (en) | 1988-08-10 | 1989-08-03 | Voltage non-linear type resistors |
CA000607731A CA1331508C (en) | 1988-08-10 | 1989-08-08 | Voltage non-linear type resistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63203920A JPH0812806B2 (en) | 1988-08-18 | 1988-08-18 | Voltage nonlinear resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0254502A true JPH0254502A (en) | 1990-02-23 |
JPH0812806B2 JPH0812806B2 (en) | 1996-02-07 |
Family
ID=16481882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63203920A Expired - Lifetime JPH0812806B2 (en) | 1988-08-10 | 1988-08-18 | Voltage nonlinear resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0812806B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56115502A (en) * | 1980-02-18 | 1981-09-10 | Tokyo Shibaura Electric Co | Method of manufacturing nonnlinear resistor |
-
1988
- 1988-08-18 JP JP63203920A patent/JPH0812806B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56115502A (en) * | 1980-02-18 | 1981-09-10 | Tokyo Shibaura Electric Co | Method of manufacturing nonnlinear resistor |
Also Published As
Publication number | Publication date |
---|---|
JPH0812806B2 (en) | 1996-02-07 |
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