JPH0250450A - Semiconductor characteristics measurement - Google Patents
Semiconductor characteristics measurementInfo
- Publication number
- JPH0250450A JPH0250450A JP63201194A JP20119488A JPH0250450A JP H0250450 A JPH0250450 A JP H0250450A JP 63201194 A JP63201194 A JP 63201194A JP 20119488 A JP20119488 A JP 20119488A JP H0250450 A JPH0250450 A JP H0250450A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- pad
- measuring
- wafer
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000005259 measurement Methods 0.000 title claims abstract description 12
- 239000000523 sample Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000691 measurement method Methods 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 239000011111 cardboard Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子の特性測定方法に関し、特にウェハ
ース上の素子の電気的特性測定方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for measuring the characteristics of a semiconductor device, and particularly to a method for measuring the electrical characteristics of a device on a wafer.
(従来の技術〕
従来、この種の装置は第3図、第4図に示すように予め
各半導体素子1によって決められたパッド位置座標に測
定探針3,3・・・が接触するように設計した探針固定
用カード4を装置に固定し、そのカードの上下動により
測定ステージ5上の半導体素子1のパッドと測定探針3
との接触を保っていた。(Prior Art) Conventionally, this type of device has been designed so that measurement probes 3, 3, . . . come into contact with pad position coordinates determined in advance by each semiconductor element 1, as shown in FIGS. The designed probe fixing card 4 is fixed to the device, and by vertical movement of the card, the pad of the semiconductor element 1 on the measurement stage 5 and the measurement probe 3 are fixed.
maintained contact with.
上述した従来の装置では、パッド座標が品種により異な
るため1品種毎に探針を固定したカード板を設計し、製
造しなければならない。従って。In the conventional apparatus described above, since the pad coordinates differ depending on the product type, a card board to which the probe is fixed must be designed and manufactured for each product type. Therefore.
実際の測定において、各品種毎に探針を取り替える必要
があり、費用もかかるという問題がある。In actual measurements, it is necessary to replace the probe for each type of product, which poses a problem in that it is costly.
本発明の目的は前記課題を解決した半導体特性測定方法
を提供することにある。An object of the present invention is to provide a method for measuring semiconductor characteristics that solves the above problems.
上述した従来の測定方法に対し、本発明は装置自体に探
針を実装し、自動的にパッド位置を認識するという相違
点を有する。The present invention differs from the conventional measurement method described above in that a probe is mounted on the device itself and the pad position is automatically recognized.
C′all!%Iを解決するための手段〕前記目的を達
成するため、本発明はウェハース上に形成した半導体素
子をウェハース状態のまま、ボンディングパッドに予め
パッド座標位置に固定された測定探針を接触させ、特性
を測定する方法において、パッド座樺位置を予め入力し
ておき。C'all! Means for Solving %I] To achieve the above object, the present invention involves bringing a measurement probe fixed in advance at a pad coordinate position into contact with a bonding pad while keeping a semiconductor element formed on a wafer in a wafer state; In the method of measuring characteristics, the pad seat position is input in advance.
そのデータをもとに探針部を移動させ、パッドと探針と
の接触をとるものである。Based on this data, the probe is moved to bring the pad into contact with the probe.
次に本発明の実施例について図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の測定方法における測定状態での素子と
測定探針との関係を示す平面図、第2図は同側面図であ
る。ところで1本発明の半導体製造装置は、ウェハース
上チップのパッド位置と測定装置側探針との位置を機械
的に自動で位置合せする機能を有している。まず、半導
体素子1上のボンディングパッド2の位置を予め3次元
座標(xtyyZ)で装置メモリに記憶させておく、こ
れにより実際に測定する場合、メモリ内に記憶している
座標を各品種毎に読み取り、パッド2上に測定探針3が
セットされる。この場合、各品種によりビン数が異なる
ため、パッド2の位置に最も近い探針が内部で演算され
、その探針3が作動する仕組みになっている。ウェハー
ス全体各チップ測定する際探針とチップの移動方向との
位置合せについては従来同様ウェハース上数点での補正
動作により行うものとする。また探針のピッチ間隔につ
いては約数十−の位置に設置する。FIG. 1 is a plan view showing the relationship between an element and a measuring probe in a measuring state in the measuring method of the present invention, and FIG. 2 is a side view of the same. By the way, the semiconductor manufacturing apparatus of the present invention has a function of mechanically and automatically aligning the pad position of the chip on the wafer and the position of the probe on the measuring device side. First, the position of the bonding pad 2 on the semiconductor element 1 is stored in advance in the device memory in three-dimensional coordinates (xtyyZ).When actually measuring, the coordinates stored in the memory can be used for each product type. After reading, the measuring probe 3 is set on the pad 2. In this case, since the number of bins differs depending on the product type, the probe closest to the position of the pad 2 is calculated internally, and that probe 3 is activated. When measuring each chip on the entire wafer, alignment between the probe and the moving direction of the chip is performed by correction operations at several points on the wafer, as in the conventional method. Furthermore, the pitch of the probes is set at a position of approximately several tens of pitches.
以上説明したように本発明は半導体素子の電気的特性測
定において、チップ上のパッド位置と装置側測定探針と
の位置合せを自動とすることにより、測定前各品種毎に
針を交換する必要がなくなり、また品種毎の探針カード
を設計、製造する手間も省くことができる効果を有する
。As explained above, in measuring the electrical characteristics of semiconductor devices, the present invention automatically aligns the pad position on the chip with the measurement probe on the equipment side, thereby eliminating the need to replace the probe for each type of device before measurement. This also has the effect of eliminating the trouble of designing and manufacturing probe cards for each type.
第1図は本発明の測定方法における半導体素子と測定探
針との関係を示す平面図、第2図は同側面図、第3図は
従来の装置測定機構部を示す平面図、第4図は探針固定
用カードを示す図である。
1・・・半導体素子 2・・・ボンディングパッ
ド3・・・測定探針FIG. 1 is a plan view showing the relationship between a semiconductor element and a measuring probe in the measurement method of the present invention, FIG. 2 is a side view of the same, FIG. 3 is a plan view showing the measuring mechanism of a conventional device, and FIG. FIG. 2 is a diagram showing a probe fixing card. 1... Semiconductor element 2... Bonding pad 3... Measurement probe
Claims (1)
状態のまま、ボンディングパッドに予めパッド座標位置
に固定された測定探針を接触させ、特性を測定する方法
において、パッド座標位置を予め入力しておき、そのデ
ータをもとに探針部を移動させ、パッドと探針との接触
をとることを特徴とする半導体特性測定方法。(1) In this method, the properties of a semiconductor element formed on a wafer are measured by contacting the bonding pad with a measurement probe fixed at the pad coordinate position in advance while the semiconductor element is in the wafer state.The pad coordinate position is input in advance. , a semiconductor characteristic measuring method characterized by moving a probe part based on the data and bringing the pad into contact with the probe.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63201194A JPH0250450A (en) | 1988-08-12 | 1988-08-12 | Semiconductor characteristics measurement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63201194A JPH0250450A (en) | 1988-08-12 | 1988-08-12 | Semiconductor characteristics measurement |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0250450A true JPH0250450A (en) | 1990-02-20 |
Family
ID=16436905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63201194A Pending JPH0250450A (en) | 1988-08-12 | 1988-08-12 | Semiconductor characteristics measurement |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0250450A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006308436A (en) * | 2005-04-28 | 2006-11-09 | Agilent Technol Inc | Compensation measuring method and verification measuring method |
US8101701B2 (en) | 2006-12-01 | 2012-01-24 | Menicon Nect Co., Ltd. | Fumaric acid derivatives and ophthalmic lenses using the same |
-
1988
- 1988-08-12 JP JP63201194A patent/JPH0250450A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006308436A (en) * | 2005-04-28 | 2006-11-09 | Agilent Technol Inc | Compensation measuring method and verification measuring method |
US8101701B2 (en) | 2006-12-01 | 2012-01-24 | Menicon Nect Co., Ltd. | Fumaric acid derivatives and ophthalmic lenses using the same |
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