JPH024974B2 - - Google Patents
Info
- Publication number
- JPH024974B2 JPH024974B2 JP19315281A JP19315281A JPH024974B2 JP H024974 B2 JPH024974 B2 JP H024974B2 JP 19315281 A JP19315281 A JP 19315281A JP 19315281 A JP19315281 A JP 19315281A JP H024974 B2 JPH024974 B2 JP H024974B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- voltage
- coil
- back electromotive
- relay coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004804 winding Methods 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Relay Circuits (AREA)
Description
【発明の詳細な説明】
（利用分野）
本発明は１巻線ラツチングリレーのドライブ回
路に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Application) The present invention relates to a drive circuit for a single-winding latching relay.
（従来技術の問題点）
従来の１巻線ラツチングリレーのドライブ回路
は、コイル逆起電圧吸収の為に、コイル両端に並
列にツエナーダイオードを２個またはサージアブ
ソーバー（ZNR）を接続しコイル両端に生じる
コイル逆起電圧を上記のブレークオーバー電圧以
下にしていた。(Problems with the conventional technology) The drive circuit for a conventional single-winding latching relay connects two Zener diodes or a surge absorber (ZNR) in parallel to both ends of the coil in order to absorb the back electromotive force of the coil. The coil back electromotive force generated in the coil was kept below the above breakover voltage.
ところで、上記のブレークオーバー電圧は素子
により一定であり、半導体スイツチング素子の耐
圧と電源電圧のかねあいで設計が難しいと共に、
上記素子の応答が遅いと、電源にノイズが乗る原
因にもなつていた。 By the way, the breakover voltage mentioned above is constant depending on the device, and design is difficult due to the balance between the breakdown voltage of the semiconductor switching device and the power supply voltage.
If the response of the above-mentioned element is slow, it also causes noise to be added to the power supply.
（発明の目的）
本発明は上記の様な点に鑑みて成したものであ
つて、３端子ｎゲートサイリスタとダイオードを
用い、コイル両端に生じる逆起電圧を電源電圧よ
り高くならない様にして、設計を簡単にすると共
に逆起吸収ループを接地との間に設け電源にノイ
ズが乗らない様にすることを目的としたものであ
る。(Object of the Invention) The present invention has been made in view of the above points, and uses a 3-terminal n-gate thyristor and a diode to prevent the back electromotive force generated at both ends of the coil from becoming higher than the power supply voltage. The purpose of this is to simplify the design and to prevent noise from entering the power supply by providing a back electromotive force absorption loop between the power supply and the ground.
（実施例）
以下本発明を一実施例として掲げた図面に基づ
いて説明する。１は電圧電源で、２は接地で信号
によつて同時にオン・オフする半導体スイツチン
グ素子３ａ，４ａをそれぞれ電源１とリレーコイ
ル７の一端８ａにリレーコイル７の一端８ｂと接
地２に接続している。同様に半導体スイツチング
素子３ｂ，４ｂがそれぞれ電源１とリレーコイル
７の一端８ｂに、リレーコイル７の一端８ａと接
地２に接続されている。５ａ，５ｂはそれぞれゲ
ートが電源１に、アノードがコイル７の一端８
ａ，８ｂに、カソードが接地２に接続された３端
子ｎゲートサイリスタである。ダイオード６ａ，
６ｂはそれぞれアノードが接地２に、カソードが
コイル７の一端８ａ，８ｂに接続されている。(Example) The present invention will be described below based on the drawings as an example. 1 is a voltage power supply, 2 is a ground, and semiconductor switching elements 3a and 4a, which are turned on and off simultaneously by a signal, are connected to the power supply 1 and one end 8a of the relay coil 7, one end 8b of the relay coil 7, and the ground 2, respectively. There is. Similarly, semiconductor switching elements 3b and 4b are connected to the power source 1 and one end 8b of the relay coil 7, and to one end 8a of the relay coil 7 and the ground 2, respectively. 5a and 5b have their gates connected to the power supply 1 and their anodes connected to one end 8 of the coil 7.
A and 8b are three-terminal n-gate thyristors whose cathodes are connected to ground 2. diode 6a,
6b has an anode connected to the ground 2 and a cathode connected to one end 8a, 8b of the coil 7, respectively.
（動作）
耐して、この半導体スイツチング素子３ａ，４
ａに同時に信号を与えオンさせると、コイル７に
は端子８ａから８ｂ方向に電流が流れる。この時
３端子ｎゲートサイリスタ（PUT）５ａはオフ
状態である。次にスイツチング素子３ａ，４ａに
同時にオフ信号を与えるとスイツチング素子３
ａ，４ａはオフし、コイル７には逆起電圧（端子
８ｂが正）が生じる。この逆起電圧が電源電圧よ
り高くなるとPUT５ａ、ダイオード６ａがオン
して７−５ａ−２−６ａの閉レープが生じ逆起を
吸収し、逆起電圧を電源電圧以下におさえると共
に、電源にノイズを乗せない。(Operation) This semiconductor switching element 3a, 4
When a signal is simultaneously applied to terminals a to turn them on, a current flows through the coil 7 from the terminals 8a to 8b. At this time, the three-terminal n-gate thyristor (PUT) 5a is in an off state. Next, when an off signal is applied to switching elements 3a and 4a at the same time, switching element 3
a and 4a are turned off, and a back electromotive voltage (terminal 8b is positive) is generated in the coil 7. When this back electromotive voltage becomes higher than the power supply voltage, PUT5a and diode 6a turn on, creating a closed loop of 7-5a-2-6a, absorbing the back electromotive force, suppressing the back electromotive force below the power supply voltage, and reducing noise in the power supply. I can't ride it.
半導体スイツチング素子３ｂ，４ｂがオン状態
からオフ状態になつた時の逆起電圧吸収動作は上
記ａをｂと置き換えたものになる。 The back electromotive force absorption operation when the semiconductor switching elements 3b and 4b change from the on state to the off state is the same as that in which a is replaced with b.
（効果）
本発明は上記の如く、３端子ｎゲートサイリス
タ５ａ，５ｂとダイオード６ａ，６ｂによりリレ
ーコイル７の両端８ａ，８ｂに生じる逆起電圧を
閉ループ７−５ａ−２−６ａまたは７−５ｂ−２
−６ｂにて吸収し、そのピーク値を電源電圧以下
におさえることができる。(Effects) As described above, the present invention reduces the back electromotive force generated at both ends 8a, 8b of the relay coil 7 by the three-terminal n-gate thyristors 5a, 5b and the diodes 6a, 6b into a closed loop 7-5a-2-6a or 7-5b. -2
-6b, and its peak value can be suppressed below the power supply voltage.
従つて、従来、ツエナーダイオード、ZNRな
どを逆起電圧吸収に用いた場合、そのブレークオ
ーバー電圧と半導体スイツチング素子３ａ，３
ｂ，４ａ，４ｂの耐圧から使用電源電圧に制限が
あつたと共に電源に逆起電圧によるノイズが乗る
可能性があつたが、本発明は使用電源電圧の制限
を半導体スイツチング素子の耐圧のみと簡単化
し、かつ、逆起電圧を電源電圧以下におさえるの
で電源にノズルが乗る可能性をなくするなどの効
果がある。 Therefore, when a Zener diode, ZNR, etc. is conventionally used to absorb back electromotive force, its breakover voltage and semiconductor switching elements 3a, 3
The power supply voltage used was limited by the withstand voltage of the semiconductor switching elements, and there was a possibility that noise due to the back electromotive voltage might be introduced into the power supply. However, the present invention simply limits the power supply voltage used by limiting the power supply voltage to the withstand voltage of the semiconductor switching element. In addition, since the back electromotive voltage is suppressed below the power supply voltage, there is an effect such as eliminating the possibility that the nozzle is connected to the power supply.
図面は本発明の１巻線ラツチングリレードライ
ブ回路の一実施例を示す回路図である。
１……電圧電源、２……接地（GND）、３ａ，
３ｂ，４ａ，４ｂ……半導体スイツチング素子、
５ａ，５ｂ……PUT、６ａ，６ｂ……ダイオー
ド。
The drawing is a circuit diagram showing an embodiment of the one-winding latching relay drive circuit of the present invention. 1... Voltage power supply, 2... Ground (GND), 3a,
3b, 4a, 4b...semiconductor switching element,
5a, 5b...PUT, 6a, 6b...diode.
Claims (1)
流を正負方向に流す為に、この両端に各々接続さ
れた半導体スイツチング素子と、この上下スイツ
チング素子の中点であつて、而もリレーコイル一
端にそのアノードが接続され、而もそのゲートは
電源に接続され、そのカソードは接地されている
３端子ｎゲートサイリスタと、この３端子ｎゲー
トサイリスタのアノードと接地との間に逆方向に
接続されたダイオードとよりなる１巻線ラツチン
グリレーのドライブ回路。1. One relay coil, a semiconductor switching element connected to both ends of the relay coil in order to allow current to flow in the positive and negative directions, and an anode connected to one end of the relay coil at the midpoint of the upper and lower switching elements. is connected to a three-terminal n-gate thyristor whose gate is connected to a power supply and whose cathode is grounded, and a diode connected in the opposite direction between the anode of this three-terminal n-gate thyristor and ground. A drive circuit for a single-winding latching relay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19315281A JPS5894732A (en) | 1981-11-30 | 1981-11-30 | Drive circuit for 1-turn latching relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19315281A JPS5894732A (en) | 1981-11-30 | 1981-11-30 | Drive circuit for 1-turn latching relay |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5894732A JPS5894732A (en) | 1983-06-06 |
| JPH024974B2 true JPH024974B2 (en) | 1990-01-31 |
Family
ID=16303142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19315281A Granted JPS5894732A (en) | 1981-11-30 | 1981-11-30 | Drive circuit for 1-turn latching relay |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5894732A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03279655A (en) * | 1990-03-28 | 1991-12-10 | Japan Electron Control Syst Co Ltd | Knocking control device for internal combustion engine |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993438B (en) * | 2019-11-13 | 2021-10-15 | 上海空间电源研究所 | Three-relay interlocking circuit |
-
1981
- 1981-11-30 JP JP19315281A patent/JPS5894732A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03279655A (en) * | 1990-03-28 | 1991-12-10 | Japan Electron Control Syst Co Ltd | Knocking control device for internal combustion engine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5894732A (en) | 1983-06-06 |
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