JPH0249723Y2 - - Google Patents
Info
- Publication number
- JPH0249723Y2 JPH0249723Y2 JP8682885U JP8682885U JPH0249723Y2 JP H0249723 Y2 JPH0249723 Y2 JP H0249723Y2 JP 8682885 U JP8682885 U JP 8682885U JP 8682885 U JP8682885 U JP 8682885U JP H0249723 Y2 JPH0249723 Y2 JP H0249723Y2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etched
- cassette
- chamber
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 24
- 238000001312 dry etching Methods 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 19
- 239000006185 dispersion Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8682885U JPH0249723Y2 (cs) | 1985-06-11 | 1985-06-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8682885U JPH0249723Y2 (cs) | 1985-06-11 | 1985-06-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61203541U JPS61203541U (cs) | 1986-12-22 |
| JPH0249723Y2 true JPH0249723Y2 (cs) | 1990-12-27 |
Family
ID=30638485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8682885U Expired JPH0249723Y2 (cs) | 1985-06-11 | 1985-06-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0249723Y2 (cs) |
-
1985
- 1985-06-11 JP JP8682885U patent/JPH0249723Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61203541U (cs) | 1986-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7748138B2 (en) | Particle removal method for a substrate transfer mechanism and apparatus | |
| EP0854390B1 (en) | Baking apparatus and baking method | |
| TWI462185B (zh) | 基板處理裝置,基板支持具及半導體裝置之製造方法 | |
| JPH07142444A (ja) | マイクロ波プラズマ処理装置および処理方法 | |
| JP2592511B2 (ja) | 縦型半導体製造システム | |
| US6051512A (en) | Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers | |
| JPH04179223A (ja) | 熱処理装置 | |
| JP3359324B2 (ja) | 半導体製造用加熱装置 | |
| JP2005354025A (ja) | 基板搬送機構、該基板搬送機構を備える基板搬送装置、基板搬送機構のパーティクル除去方法、基板搬送装置のパーティクル除去方法、該方法を実行するためのプログラム、及び記憶媒体 | |
| TW200929352A (en) | Vacuum processing apparatus | |
| US20030205196A1 (en) | Substrate processing apparatus and substrate processing method | |
| JPH0249723Y2 (cs) | ||
| KR102058034B1 (ko) | 리프트 핀 유닛 및 이를 구비하는 기판 지지 유닛 | |
| US12014908B2 (en) | Vacuum processing apparatus | |
| JPH051071Y2 (cs) | ||
| TWI827101B (zh) | 電漿處理裝置 | |
| JP3162272B2 (ja) | プラズマ処理方法 | |
| JPS6233745B2 (cs) | ||
| JP3651564B2 (ja) | 表面波プラズマ蝕刻装置 | |
| JP2563689B2 (ja) | プラズマ反応装置 | |
| JPH051975B2 (cs) | ||
| JPH0138911Y2 (cs) | ||
| JPH05326453A (ja) | マイクロ波プラズマ処理装置 | |
| JP3149697B2 (ja) | ウェハ処理装置 | |
| JP2002203778A (ja) | 加熱処理装置 |