JPH0249451A - Cap for semiconductor device - Google Patents

Abstract

PURPOSE:To shield a semiconductor device cap from magnetism, electromagnetic waves, ultraviolet rays, or alpha rays by a method wherein the semiconductor device cap is a double structure of an amorphous metal thin plate and a thin substrate made of a crystalline material and coated with a polyimide resin layer on the side not in contact with the amorphous metal thin plate. CONSTITUTION:A cap A is a double structure of an amorphous metal thin plate 1 and a thin substrate 2 made of a crystalline material and coated with a polyimide resin layer 3 on the side 2b, opposite to the side 2a, which is in contact with the amorphous metal thin plate 1. The cap A is so designed as to detachably cover the upper surface and the circumference of a semiconductor device B, and for this purpose the four sides of the ceiling 4 of the cap A are bent down for the formation of side panes 5. The side panes 5 hold the entirety of the side walls 6 by applying holders 8 which are side panes 7 of the thin substrate 2. At the ends of the shorter of the side panes 5, there are engaging sections 9 formed by press-forming the ends of the substrate 2 into jaws. This design shields a semiconductor device cap from magnetism, electromagnetic waves, ultraviolet rays, or alpha rays.

Description

[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor cap.

(Prior art) For example, there is a light-shielding cover film, which is used to mask the window of a semiconductor device to prevent ultraviolet rays from entering through the window, thereby preventing programmed data from being erased by ultraviolet rays.

(Problems to be solved by the invention) By the way, for semiconductors, not only the above-mentioned ultraviolet rays, but also
Electromagnetic waves, magnetism, and alpha rays are also extremely harmful, and there is also the problem that data can be erased by these.

On the other hand, amorphous metal, which is an amorphous material, is used in semiconductor factories and electronic equipment factories due to its excellent high magnetic permeability.

It can be used as a magnetic shielding material for buildings such as magnetic measurement research facilities.

Therefore, regarding magnetic shielding, instead of relying on the indirect method of making the entire building a magnetic shield structure, it is possible to cover the semiconductor itself with amorphous metal and provide direct magnetic shielding.

However, there is a problem in that the high strength and toughness, which are one of the excellent properties of amorphous metals, and high hardness act as drawbacks.

That is, when it is bent into a shape having a top plate, side plates, and a hooking part, the bent portions at the corners are likely to tear and break, and internal stress is generated, resulting in a decrease in magnetic permeability and corrosion resistance.

In addition, in order to avoid deterioration of magnetic permeability and corrosion resistance, attempts were made to bend the corner portions with a radius, but the springback caused by the excellent high strength and toughness was too strong, making the original plate shape less elastic. It returned and did not take the cap shape.

It is also possible to bury a plate-shaped amorphous metal in the upper surface of the semiconductor, but if you want to actively erase the programmed data, the buried amorphous metal will be an obstacle. Since the sides of semiconductors are vulnerable to magnetic and electromagnetic waves, there remains a concern about erasure, and in the end, it was impossible to directly magnetically shield semiconductors.

Another problem is the insulation with the bottles that are parallel to the side of the semiconductor.

Therefore, the inventor focused on combining an amorphous metal, which is an amorphous material, with a crystalline material, and bonded an amorphous gold S thin plate cut and formed into the expanded shape of the cap and a thin substrate made of a crystalline material. The mixture was integrally polymerized, dried, and then pressed into a cap shape.

However, while the crystalline material plastically deforms into the desired irregular shape at the bend as predicted, the amorphous metal suffers from its high strength and toughness and peels off from the adhesive surface at the bend. It didn't take on a cap shape.

In addition, it was confirmed that in the bonded cap, the thermal expansion and contraction of the crystalline material affects the amorphous metal, resulting in a decrease in the properties of the amorphous, such as soft magnetism and magnetostriction.

The present invention has been made in view of the above circumstances, and its purpose is to have a desired cap shape, have insulation properties from the semiconductor, be detachable from the semiconductor, and be resistant to ultraviolet rays. The present invention aims to provide a cap for semiconductors that can shield not only magnetism but also magnetism, N magnetic waves, and even alpha rays.

(Means for Solving the Problems) The semiconductor cap of the present invention includes a thin amorphous gold plate and a thin substrate made of a crystalline material with a polyimide resin layer formed on the surface opposite to the overlapping surface of the amorphous metal thin plates. It has a double structure, and each of the four folded side plates of the top plate part holds the entire side wall part of the amorphous gold ff1il plate between the grip parts, which are the side walls of the thin substrate, and the sides of the side plate part A jaw-like engaging part is formed at the tip.

The amorphous metal in the present invention includes various alloys, and is also selected from those coated with copper plating, etc., which enhances the electromagnetic wave shielding effect.

Further, the amorphous metal thin plate may be in the form of two or more layers, which is effective in improving shielding efficiency.

The target crystalline materials are metals with good plastic deformation, and high-performance magnetic thin steel sheets have superior magnetic permeability, magnetostriction, core loss, ^frequency magnetic properties, and cooling effect in 11 fields compared to general metals. (However, it is one step inferior to amorphous metals.) Examples include silicon steel plates.

(Function) The thin substrates made of crystalline material in the top plate, side plates, and hooking portions are plastically deformed and take on the shape of a cap, and their gripping portions sandwich and grip the entire side wall portion of the amorphous metal thin plate, thereby creating the same cap. The shape is held by an amorphous metal thin plate.

The thin substrate and the amorphous metal thin plate in the top plate part and the side plate part have an overlapping relationship that does not interfere with each other in the planar direction.

The polyimide resin layer covers the entire cap including the inner surface of the side plate.

(Example) An example of implementation of the present invention will be described in detail below with reference to the drawings.

FIGS. 1 to 4 illustrate the semiconductor cap of the present invention, and this cap (A) is composed of an amorphous metal thin plate (1) and an overlapping surface (2a) of the same metal thin plate (1) opposite to the overlapping surface (2a). It has a double structure with a thin substrate (2) made of a crystalline material whose surface (2b) is coated with a polyimide resin layer (3), and is adhered to the semiconductor (B) so as to cover its upper surface and peripheral side. As possible, side plate portions (5) are formed by bending each of the four sides of the top plate portion (4).

And each copper plate part (5) is an amorphous metal thin plate (1)
The entire side basin part (6) is attached to the side wall part (7) of the thin substrate (2).
), and the polyimide resin layer (3) covers all of the outer surface of the cap (A) and the side plate part (5).
I try to form everything on the inside. Specifically, by pressing, the outer part (8a) of the gripping part (8) is folded back to the side wall part (6) and gripped, and this gripping part (8) is held together with the side wall part (6>). (8a) Formed by bending the tip as a trough.

In addition, the N substrate (
2) The engaging part (9
) is formed.

The engaging portion (9) has a finger hook portion (10) extending outward, and the finger hook i! By pushing the gl (10) closer to the copper plate part (5), it can be easily attached to and detached from the semiconductor (B).

FIG. 6 shows a semiconductor cap (A) according to another embodiment. This cap (A) has basically the same structure as that of the previous embodiment, and the difference is that the side plate part (5) is Outer part (8
a) The tip is bent to form a peak, and the polyimide resin layer (3) forms the entire inside surface of the cap and the entire outside surface of the side plate portion (5).

Further, in the above embodiment, the engaging portions (9) are formed on both side surfaces (5) on the short side, but it is also possible to form them only on one side.

(Effect of the invention) Therefore, the present invention has the following advantages.

■ It has a cap shape consisting of a top plate part and side plate part with a double structure of a crystalline material vJ thin substrate with a polyimide resin layer and an amorphous metal thin plate, and the semiconductor is exposed to magnetism and one magnetic wave from its top and peripheral sides. It can shield from ultraviolet rays and even alpha rays, eliminating accidents such as data being accidentally erased.

■ The amorphous metal thin plate and the crystalline thin substrate in the top plate and side plate have a double structure in which they do not interfere with each other in the direction along the surface, so that thermal expansion and contraction of the thin substrate is more similar to that of the amorphous metal. It is possible to maintain the characteristics of the amorphous metal and maintain the original shielding effect.

(2) The amorphous gold i-thin plate portion at the bent portion of each side plate has the minimum required bending angle, and only a small amount of internal stress is generated in the same portion, which has almost no effect on the shielding effect.

(2) The amorphous metal absorbs heat from the semiconductor and dissipates it, and protects the semiconductor by preventing external pressure.

- Since the inner surface of the side plate is an insulating surface made of a polyimide resin layer, insulation from the pins in the semiconductor can be maintained, and it can be attached to the semiconductor and shielded without any problems.

■ It can be easily attached and detached by removing the hooking part from the semiconductor, and when erasing data contents, it can be removed and removed.
It has the flexibility to be erased at will.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing an embodiment of the semiconductor cap of the present invention. FIG. 2 is a sectional view taken along line nn. Figure 3 is (P) of Figure 2.
An enlarged cross-sectional view in the direction of arrows. FIG. 4 is an enlarged sectional view taken along IV-rV. Fifth
The figure is a reduced perspective view of an amorphous gold 1iIn plate and a thin substrate. FIG. 6 is a partially enlarged sectional view of a cap of another embodiment. 7th
This figure is a partially cutaway, reduced perspective view showing the cap illustrated in FIG. 1 attached to a semiconductor. In the figure, (1) is an amorphous metal thin plate (2) is a crystalline material thin substrate (2a) is a layered surface (2b) is a surface (3) is a polyimide resin layer (4) is a top plate (5) is a side plate The side wall part is the grip part (9) and the engaging part is owned by patent applicant Iwata Electric Works Co., Ltd.

Claims (1)

[Claims] It has a double structure of an amorphous metal thin plate and a thin substrate made of a crystalline material with a polyimide resin layer formed on the surface opposite to the overlapping surface of the amorphous metal thin plate, and each side plate is bent on four sides of the top plate. is a semiconductor cap in which the entire side wall portion of an amorphous metal thin plate is held between gripping portions that are side wall portions of a thin substrate, and a jaw-like engaging portion is formed at the tip of the side plate portion.